Nanotechnology/Materials, Nano/micro-systems, Micro/Nanodevice

Nanotechnology/Materials, Thin-film surfaces and interfaces, Thin Film and Surface Interface Physical Properties

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment, Electronic Device/Electronic Equipment

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Thermal engineering

reaction kinetics, Michaelis - Menten equation
Contributor
2021

In2O3-based thin-film transistors with a (400) polar surface for CO2 gas detection at 150 °C
A. Nodera; S. Aikawa
Materials Science & Engineering B, 2024, [Reviewed]
Last, Corresponding

Correlation between CO2 Sensitivity and Channel-Layer Thickness in In2O3 Thin-Film Transistor Gas Sensors
A. Nodera; S. Aikawa
Electronics, 2024, [Reviewed]
Last, Corresponding

N2雰囲気中RFマグネトロンスパッタリングで作製したSnO2:N薄膜の特性評価
23 Nov. 2023, [Reviewed]
Last, Corresponding

溶液プロセスで作製したLaドープIn2O3薄膜トランジスタのCO2センシング特性
23 Nov. 2023, [Reviewed]
Last, Corresponding

硫黄蒸気輸送アニールを用いた金属Sn薄膜の硫化とその評価
23 Nov. 2023, [Reviewed]
Last, Corresponding

低濃度水素雰囲気中スパッタとアニールを用いたSnO2ターゲットからのSnO製作
23 Nov. 2023, [Reviewed]
Last, Corresponding

InZnO TFT CO2ガスセンサーにおけるZn濃度と膜厚の影響
22 Nov. 2023, [Reviewed]
Last, Corresponding

B含有In2O3へ水素ドーピングによる機械的柔軟性への効果
22 Nov. 2023, [Reviewed]
Last, Corresponding

The influence of oxygen related defects on the formation of In2O3-based low fluorescence transparent conducting film
M. Shimizu; M. Shugo; S. Mori; Y. Hijikata; S. Aikawa
Physica Status Solidi A, 2023, [Reviewed]
Last

p-type conversion of distorted SnOx thin film by mild thermal annealing treatment in pure N2 environment
K. Watanabe; T. Kawaguchi; S. Aikawa
AIP Advances, 2022, [Reviewed]
Last, Corresponding

歪み導入したアモルファスBドープIn2O3透明導電膜の機械的柔軟性
15 Nov. 2021, [Reviewed]
Last, Corresponding

n型SnOx薄膜の窒化による電荷移動と伝導型変換
15 Nov. 2021, [Reviewed]
Last, Corresponding

CaF2とコスパッタ成膜したIn2O3透明導電薄膜の 光学的および電気的特性評価
15 Nov. 2021, [Reviewed]
Last, Corresponding

Gas adsorption effects on electrical properties of amorphous In2O3 thin-film transistors under various environments
K. Nakamura; K. Sasaki; S. Aikawa
Japanese Journal of Applied Physics, 2020, [Reviewed]
Last, Corresponding

IoTデバイスの低電圧駆動に役立つ新規構造アモルファス酸化物薄膜トランジスタ
2020, [Reviewed]
Lead, Corresponding

Si-incorporated amorphous indium oxide thin-film transistors
S. Aikawa; T. Nabatame; K. Tsukagoshi
Japanese Journal of Applied Physics, 2019, [Reviewed]

ITOおよびIZOに代わる酸化インジウム系透明導電材料開発の試み
2019, [Reviewed]

Carrier polarity engineering in carbon nanotube field-effect transistors by induced charges in polymer insulator
S. Aikawa; S. Kim; T. Thurakitseree; E. Einarsson; T. Inoue; S. Chiashi; K. Tsukagoshi; S. Maruyama
Applied Physics Letters, 2018, [Reviewed]

Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors
K. Kurishima; T. Nabatame; N. Mitoma; T. Kizu; S. Aikawa; K. Tsukagoshi; A. Ohi; T. Chikyow; A. Ogura
Journal of Vacuum Science & Technology B, 2018, [Reviewed]

Effect of Ti doping to maintain structural disorder in InOx-based thin-film transistors fabricated by RF magnetron sputtering
S. Aikawa
3D Research, 2017, [Reviewed]

有機ELディスプレイの効率化に向けたSiドープ透明電極材料開発の試み
2017, [Reviewed]

Gate modulation of anodically etched gallium arsenide nanowire random network
S. Aikawa; K.Yamada; H. Asoh; S. Ono
Japanese Journal of Applied Physics, 2016, [Reviewed]

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage
T. Kizu; S. Aikawa; T. Nabatame; A. Fujiwara; K. Ito; M. Takahashi; K. Tsukagoshi
Journal of Applied Physics, 2016, [Reviewed]

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process
M.-F. Lin; X. Gao; N. Mitoma; T. Kizu; W. Ou-Yang; S. Aikawa; T. Nabatame; K. Tsukagoshi
AIP Advances, 2015, [Reviewed]

Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants
N. Mitoma; S. Aikawa; W. Ou-Yang; X. Gao; T. Kizu; M.-F. Lin; A. Fujiwara; T. Nabatame; K. Tsukagoshi
Applied Physics Letters, 2015, [Reviewed]

Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe₂
M. Yamamoto; S. Dutta; S. Aikawa; S. Nakaharai; K. Wakabayashi; M. S. Fuhrer; K. Ueno; K. Tsukagoshi
Nano Letters, 2015, [Reviewed]

Highly Stable and Tunable n-Type Graphene Field-Effect Transistors with Polyvinyl Alcohol Films
S. Kim; P. Zhao; S. Aikawa; E. Einarsson; S. Chiashi; S. Maruyama
ACS Applied Materials & Interfaces, 2015, [Reviewed]

Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors
S. Aikawa; N. Mitoma; T. Kizu; T. Nabatame; K. Tsukagoshi
Applied Physics Letters, 2015, [Reviewed]

Influence of Al₂O₃ layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
K. Kurishima; T. Nabatame; M. Shimizu; N. Mitoma; T. Kizu; S. Aikawa; K. Tsukagoshi; A. Ohi; T. Chikyow; A. Ogura
Journal of Vacuum Science & Technology A, 2015, [Reviewed]

Stable amorphous In₂O₃-based thin-film transistors by incorporating SiO₂ to suppress oxygen vacancies
N. Mitoma; S. Aikawa; X. Gao; T. Kizu; M. Shimizu; M.-F. Lin; T. Nabatame; K. Tsukagoshi
Applied Physics Letters, 2014, [Reviewed]

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability
T. Kizu; S. Aikawa; N. Mitoma; M. Shimizu; X. Gao; M.-F. Lin; T. Nabatame; K Tsukagoshi
Applied Physics Letters, 2014, [Reviewed]

Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe₂
M. Yamamoto; S. T. Wang; M. Ni; Y.-F. Lin; S.-L. Li; S. Aikawa; W.-B. Jian; K. Ueno; K. Wakabayashi; K. Tsukagoshi
ACS Nano, 2014, [Reviewed]

Influence of Al₂O₃ gate dielectric on transistor properties for IGZO thin film transistor
K. Kurishima; T. Nabatame; M. Shimizu; S. Aikawa; K. Tsukagoshi; A. Ohi; T. Chikyo; A. Ogura
ECS Transactions, 2014, [Reviewed]

Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors
X. Gao; S. Aikawa; N. Mitoma; M.-F. Lin; T. Kizu; T. Nabatame; K. Tsukagoshi
Applied Physics Letters, 2014, [Reviewed]

Effect of Inrush Current on Carbon Nanotube Synthesis from Xylene by the Liquid-Phase Pulsed Arc Method Using Copper Electrodes
T. Kizu; S. Aikawa; K. Takekoshi; E. Nishikawa
e-Journal of Surface Science and Nanotechnology, 2013, [Reviewed]

Effect of Gas Pressure on the Density of Horizontally Aligned Single-Walled Carbon Nanotubes Grown on Quartz Substrates
T. Inoue; D. Hasegawa; S. Badar; S. Aikawa; S. Chiashi; S. Maruyama
The Journal of Physical Chemistry C, 2013, [Reviewed]

Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor
S. Aikawa; P. Darmawan; K. Yanagisawa; T. Nabatame; Y. Abe; K. Tsukagoshi
Applied Physics Letters, 2013, [Reviewed]

Effects of dopants in InO_x-based amorphous oxide semiconductors for thin-film transistor applications
S. Aikawa; T. Nabatame; K. Tsukagoshi
Applied Physics Letters, 2013, [Reviewed]

Deformable Transparent All-Carbon-Nanotube Transistors
S. Aikawa; E. Einarsson; T. Thurakitseree; S. Chiashi; E. Nishikawa; S. Maruyama
Applied Physics Letters, 2012, [Reviewed]

Diameter Controlled CVD Synthesis of Single-Walled Carbon Nanotubes
T. Thurakitseree; E. Einarsson; R. Xiang; P. Zhao; S. Aikawa; S. Chiashi; J. Shiomi; S. Maruyama
Journal of Nanoscience and Nanotechnology, 2012, [Reviewed]

Diameter-Controlled and Nitrogen-Doped Vertically Aligned Single-Walled Carbon Nanotubes
T. Thurakitseree; C. Kramberger; P. Zhao; S. Aikawa; S. Harish; S. Chiashi; E. Einarsson; S. Maruyama
Carbon, 2012, [Reviewed]

Enhanced thermal conductivity of ethylene glycol with single-walled carbon nanotube inclusions
S. Harish; K. Ishikawa; E. Einarsson; S. Aikawa; S. Chiashi; J. Shiomi; S. Maruyama
International Journal of Heat and Mass Transfer, 2012, [Reviewed]

One-Step Synthesis of Metal-Encapsulated Carbon Nanotubes by Pulsed Arc Discharge in Water
K. Takekoshi; T. Kizu; S. Aikawa; E. Nishikawa
e-Journal of Surface Science and Nanotechnology, 2012, [Reviewed]

Temperature dependent thermal conductivity increase of aqueous nanofluid with single walled carbon nanotube inclusions
S. Harish; K. Ishikawa; E. Einarsson; S. Aikawa; T. Inoue; P. Zhao; M. Watanabe; S. Chiashi; J. Shiomi; S. Maruyama
Materials Express, 2012, [Reviewed]

Influence of Pulse Condition in the Synthesis of Carbon Nanotubes Containing Tungsten by Arc Discharge in Water
K. Takekoshi; T. Kizu; S. Aikawa; M. Kanda; E. Nishikawa
Japanese Journal of Applied Physics, 2012, [Reviewed]

Simple Fabrication Technique for Field-Effect Transistor Array Using As-Grown Single-Walled Carbon Nanotubes
S. Aikawa; E. Einarsson; T. Inoue; R. Xiang; S. Chiashi; J. Shiomi; E. Nishikawa; S. Maruyama
Japanese Journal of Applied Physics, 2011, [Reviewed]

Molar Concentration Dependence of Sucrose Solution in Carbon Nanotube Synthesis by Liquid-Phase Arc Discharge
S. Aikawa; T. Kizu; K. Kamei; E. Nishikawa
e-Journal of Surface Science and Nanotechnology, 2011, [Reviewed]

Facile Fabrication of All-SWNT Field-Effect Transistors
S. Aikawa; R. Xiang; E. Einarsson; S. Chiashi; J. Shiomi; E. Nishikawa; S. Maruyama
Nano Research, 2011, [Reviewed]

Carbon Nanotube Synthesis by Arc Discharge in Water Using Metal Cathodes
T. Kizu; S. Aikawa; E. Nishikawa
e-Journal of Surface Science and Nanotechnology, 2010, [Reviewed]

環境を考慮した紫外線照射と過酸化水素の併用によるカーボンナノチューブの酸化
2010, [Reviewed]

Catalytic graphitization of an amorphous carbon film under focused electron beam irradiation due to the presence of sputtered nickel metal particles
S. Aikawa; T. Kizu; E. Nishikawa
Carbon, 2010, [Reviewed]

紫外線を用いたカーボンナノチューブ精製効果の検討
2009, [Reviewed]

Carbon Nanomaterial Synthesis from Sucrose Solution without Using Graphite Electrodes
S. Aikawa; T. Kizu; E. Nishikawa; T. Kioka
Chemistry Letters, 2007, [Reviewed]

Effect of In2O3 Channel Thickness in TFT Gas Sensor for CO2 Sensing Characteristics
A. Nodera; R. Kobayashi; S. Yamadera; K. Kibishi; T. Kobayashi; S. Aikawa
2023 International Microprocesses and Nanotechnology Conference Digest Papers, 2023, [Reviewed]
Last, Corresponding

Depth profiling of SnO2:N thin films fabricated by RF magnetron sputtering in N2 atmosphere
T. Kawaguchi; T. Kobayashi; S. Aikawa
2023 International Microprocesses and Nanotechnology Conference Digest Papers, 2023, [Reviewed]
Last, Corresponding

Reduction of remaining hysteresis in unannealed B-doped In2O3 TFTs by O2 plasma
S. Yamadera; K. Kibishi; A. Nodera; S. Aikawa
2023 International Microprocesses and Nanotechnology Conference Digest Papers, 2023, [Reviewed]
Last, Corresponding

La concentration dependence of CO2 sensitivity in solution-processed La-doped In2O3 thin-film transistors
R. Kobayashi; A. Nodera; S. Aikawa
2023 International Microprocesses and Nanotechnology Conference Digest Papers, 2023, [Reviewed]
Last, Corresponding

Co-doping of hydrogen and boron in In2O3 toward highly flexible and transparent conducting oxide film
K. Kibishi; S. Yamadera; T. Kobayashi; I. Takano; S. Aikawa
2023 International Microprocesses and Nanotechnology Conference Digest Papers, 2023, [Reviewed]
Last, Corresponding

Indium oxide-based thin film transistor with high CO2 sensitive (400) plane
A. Nodera; S. Mori; S. Aikawa
Extended Abstract of 2022 International Conference on Solid State Devices and Materials, 2022
Corresponding

Room-temperature processable highly amorphous transparent B-doped In2O3 for use as a flexible conductive film
S. Mori; A. Nodera; K. Watanabe; K. Murano; S. Aikawa
Extended Abstract of 2022 International Conference on Solid State Devices and Materials, 2022
Corresponding

Nitrogen incorporation in SnO2 matrix for passivation of oxygen vacancy and hole generation
K. Watanabe; T. Kawaguchi; S. Aikawa
Extended Abstract of 2022 International Conference on Solid State Devices and Materials, 2022
Corresponding

Comparative study of room-temperature deposited ITO and B-doped In2O3 on PET for flexible transparent electrode application
S. Mori; K. Kibishi; S. Yamadera; A. Nodera; K. Watanabe; I. Takano; S. Aikawa
2022 International Microprocesses and Nanotechnology Conference Digest Papers, 2022, [Reviewed]
Last, Corresponding

Optimization of N2 concentration in Ar/N2 sputtering deposition for p-type N-doped SnOx thin-film
T. Kawaguchi; K. Watanabe; T. Yamaguchi; T. Onuma; T. Honda; S. Aikawa
2022 International Microprocesses and Nanotechnology Conference Digest Papers, 2022, [Reviewed]
Last, Corresponding

Experimental investigation of the local bonding states of nitrogen-doped SnOx thin-film
K. Watanabe; T. Kawaguchi; T. Yamaguchi; T. Onuma; T. Honda; S. Aikawa
2022 International Microprocesses and Nanotechnology Conference Digest Papers, 2022, [Reviewed]
Last, Corresponding

Crystal-plane dependence of CO2 sensitivity on In2O3-based thin-film transistors
A. Nodera; S. Mori; S. Aikawa
2022 International Microprocesses and Nanotechnology Conference Digest Papers, 2022, [Reviewed]
Last, Corresponding

Post-deposition N2 annealing of n-type SnOx thin-films for carrier-type conversion
K. Watanabe; S. Aikawa
Extended Abstract of 2021 International Conference on Solid State Devices and Materials, 2021
Corresponding

Role of Ca in CaF2 incorporated In2O3 transparent conductive films
K. Oe; S. Mori; K. Watanabe; H. Nagai; T. Yamaguchi; T. Onuma; T. Honda; S. Aikawa
2021 International Microprocesses and Nanotechnology Conference Digest Papers, 2021, [Reviewed]
Last, Corresponding

Improvement of noble metal-free ReRAM characteristics by insertion of thin SiOx layer at the ZrOx/electrode interfaces
K. Toyama; R. Akiyama; K. Yuki; S. Aikawa
2021 International Microprocesses and Nanotechnology Conference Digest Papers, 2021, [Reviewed]
Last, Corresponding

Demonstration of flexible transparent conductive film using B-doped In2O3
S. Mori; Y. Ichinoseki; K. Watanabe; K. Murano; K. Oe; H. Nagai; T. Yamaguchi; T. Onuma; T. Honda; S. Aikawa
2021 International Microprocesses and Nanotechnology Conference Digest Papers, 2021, [Reviewed]
Last, Corresponding

Charge transfer and conduction type conversion in n-type SnO2 thin films by nitrogen annealing
K. Watanabe; T. Kawaguchi; T. Yamaguchi; T. Onuma; T. Honda; S. Aikawa
2021 International Microprocesses and Nanotechnology Conference Digest Papers, 2021, [Reviewed]
Last, Corresponding

B-doped In2O3 Transparent Electrode for Si-based Schottky Barrier Solar Cell Application
S. Aikawa; Y. Shibata; Y. Morinaga
Proceedings of the 20th IEEE International Conference on Nanotechnology, 2020, [Reviewed]
Lead, Corresponding

Comparative characterization of Si Schottky solar cells using B‐doped In2O3 and ITO transparent electrodes
S. Aikawa; Y. Shibata; Y. Morinaga
2020 International Microprocesses and Nanotechnology Conference Digest Papers, 2020, [Reviewed]
Lead, Corresponding

Investigation of CaF2 doping on electrical and optical properties of In2O3 transparent conductive film
K. Oe; S. Aikawa
2020 International Microprocesses and Nanotechnology Conference Digest Papers, 2020, [Reviewed]
Last, Corresponding

Influence of SiOx interlayer on electrical properties of noble metal-free ZrOx-based resistive switching memory devices
K. Toyama; D. Naniwa; S. Aikawa
2020 International Microprocesses and Nanotechnology Conference Digest Papers, 2020, [Reviewed]
Last, Corresponding

ヘテロ界面での自己酸化還元反応に基づくp型酸化物半導体へのキャリア注入制御
2020
Lead, Corresponding

Investigation of measurement environmental sensitivity in amorphous indium oxide-based thin-film transistors
K. Nakamura; K. Sasaki; Y. Shibata; K. Oe; S. Aikawa
2019 International Microprocesses and Nanotechnology Conference Digest Papers, 2019, [Reviewed]

Hydrophobic Fluoropolymer Interlayer between In2O3 Semiconductor and SiO2 Gate Insulator for Improvement of Thin-Film Transistor Performance
K. Sasaki; K. Nakamura; Y. Shibata; S. Aikawa
2019 International Microprocesses and Nanotechnology Conference Digest Papers, 2019, [Reviewed]

SnOx 薄膜の伝導型制御に向けたスパッタ成膜条件の検討
2018

SnOx 薄膜へのキャリア注入制御に向けたショットキーダイオード試作
2018

酸化物半導体/絶縁膜界面での加熱不要な局所電荷ドーピング
2018
Lead, Corresponding

低温プロセスで作製した酸化インジウム系薄膜トランジスタの安定化に向けた高結合解離エネルギードーパントの導入
2017
Lead, Corresponding

Hydrogen Exposure Effects on Anodically Etched GaAs Nanowires in Liquid Electrolyte
S. Aikawa; K. Yamada; H. Hashimoto; H. Asoh; S. Ono
Proceedings of the 16th IEEE International Conference on Nanotechnology, 2016

連続形成積層半導体チャネルを用いた酸化薄膜トランジスタの電気特性バラつき制御
2016
Lead, Corresponding

Electrical and Structural Characterization of Anodically Etched GaAs Nanowires Towards Functional Electronic Devices
S. Aikawa; K.Yamada; H. Asoh; H. Hashimoto; Y.-I. Kim; E. Nishikawa; S. Ono
2015 International Microprocesses and Nanotechnology Conference Digest Papers, 2015

Influence of electrical properties for IGZO TFT with Al2O3 gate insulators by PE-ALD method
K. Kurishima; T. Nabatame; M. Shimizu; S. Aikawa; K. Tsukagoshi; A. Ohi; T. Chikyo; A. Ogura
Proceedings of the 14th International Conference on Atomic Layer Deposition 2014, 2014

超フレキシブルで透明なカーボンナノチューブトランジスタ
2013

Influence of Polymer Coating on Device Properties of Carbon Nanotube Field-Effect Transistors
S. Aikawa; T. Inoue; E. Einarsson; S. Chiashi; S. Maruyama
Extended Abstract of 2012 International Conference on Solid State Devices and Materials, 2012

Thermal Conductivity of Single-Walled Carbon Nanotube Suspensions in Ethylene Glycol: Experimental Results and Theoretical Limits
S. Harish; K. Ishikawa; E. Einarsson; S. Aikawa; M. Watanabe; S. Chiashi; J. Shiomi; S. Maruyama
Proceedings of the 4th International Symposium on Heat Transfer and Energy Conservation, 2012

透明なカーボンナノチューブフレキシブルトランジスタ
2012

As-Grown単層CNTを用いた薄膜トランジスタ作製
2012

One-Step Encapsulation of Metal Particle with High-Melting into Carbon Nanotubes by Pulsed Arc Discharge in Water
K. Takekoshi; T. Kizu; S. Aikawa; E. Nishikawa
The proceedings of ISSS-6, 2011

Simple Synthesis Method for Carbon Nanotubes from Aromatic Compounds by Liquid-Phase Arc Plasma
T. Kizu; K. Takekoshi; S. Aikawa; E. Nishikawa
The proceedings of ISSS-6, 2011

Fabrication of flexible thin film transistors using single-walled carbon nanotubes and graphene
S.J. Kim; S. Aikawa; B. Hou; E. Einarsson; S. Chiashi; S. Maruyama
2011 International Microprocesses and Nanotechnology Conference Digest Papers, 2011

Extremely Flexible All-Carbon Nanotube Field-Effect Transistors Without Device Degradation
S. Aikawa; E. Einarsson; S. Chiashi; E. Nishikawa; S. Maruyama
2011 International Microprocesses and Nanotechnology Conference Digest Papers, 2011

Ambipolar Conversion of Polymer-Coated All Single-Walled Carbon Nanotube Field-Effect Transistors
S. Aikawa; E. Einarsson; S. Chiashi; E. Nishikawa; S. Maruyama
Extended Abstract of 2011 International Conference on Solid State Devices and Materials, 2011

Carbon Nanotubes Synthesis in Liquid Xylene by Low-frequency Pulsed Arc Discharge Using Copper Electrodes: An Effect of Current Waveform
T. Kizu; S. Aikawa; K. Takekoshi; E. Nishikawa
The proceedings of ISPlasma 2011, 2011

As-grownの単層カーボンナノチューブを用いた電界効果トランジスタアレイの簡易作製法
2011

All-SWNT電界効果トランジスタの容易な作製
2011

Characterization of field-effect transistors using high-quality as-grown SWNTs from alcohol CVD
S. Aikawa; R. Xiang; E. Einarsson; S. Chiashi; J. Shiomi; E. Nishikawa; S. Maruyama
The proceedings of AsiaNano 2010, 2010

Diameter controlled CVD synthesis of single-walled carbon nanotubes
T. Thurakitseree; E. Einarsson; R. Xiang; S. Aikawa; S. Chiashi; J. Shiomi; S. Maruyama
The proceedings of AsiaNano 2010, 2010

Simple Fabrication Technique for an Array of Field-effect Transistors Using High-quality as-grown Single-walled Carbon Nanotubes from Dip-coated Catalyst by Substrate Surface Modification
S. Aikawa; R. Xiang; E. Einarsson; S. Chiashi; J. Shiomi; E. Nishikawa; S. Maruyama
Extended Abstract of 2010 International Conference on Solid State Devices and Materials, 2010

Carbon nanotubes synthesis in liquid xylene by low-frequency pulsed arc discharge using metal electrodes: An effect of inrush current
T. Kizu; S. Aikawa ; K. Takekoshi; E. Nishikawa
The proceedings of the ICCG-16, 2010

単層カーボンナノチューブの直径制御合成
2010

Graphitization of an Amorphous Carbon Film under Electron Beam Irradiation Catalysed by Metal Particles
S. Aikawa; T. Kizu; E. Nishikawa
Proceedings of 7th International Symposium on Atomic Level Characterizations for New Materials and Devices '09, 2009

Carbon Nanotubes Synthesis in Water by Arc Discharge Using Metal Electrodes
T. Kizu; S. Aikawa; E. Nishikawa
Proceedings of 7th International Symposium on Atomic Level Characterizations for New Materials and Devices '09, 2009

Carbon nanomaterial synthesis from o-xylene using arc discharge method with copper electrodes
T. Kizu; Y. Kim; S. Aikawa; E. Nishikawa
Proceedings of the 26th Symposium on Plasma Processing, 2009

Investigation of Annealing treatment for Improving Subthreshold in Amorphous p-type TeOx-based TFT
K. Ishi, T. Kobayashi, D. Watanabe, S. Yamadera, S. Aikawa
19th International Thin-Film Transistor Conference (ITC 2025), 24 Mar. 2025

低温でCO2検知可能なIn2O3薄膜トランジスタガスセンサー
18 Mar. 2025, [Invited]

InCl3を用いたMist CVD法極薄膜In2O3成膜
16 Mar. 2025

結晶構造に着目したIn2O3系透明導電膜の柔軟性劣化
15 Mar. 2025

低温溶液プロセスによるp型SnO薄膜の作製と評価
15 Mar. 2025

スパッタ条件調整による極性In2O3(100)面の優先成長
15 Mar. 2025

p型TaドープSnO薄膜の作製および薄膜トランジスタ応用
15 Mar. 2025

室温プロセスでバイアスストレス安定性の高いアモルファスIn2O3系TFT
15 Mar. 2025

SnO2ターゲットを用いて還元スパッタ成膜したp型SnOの表面観察
15 Mar. 2025

ITO透明導電膜によるSiC/SiO2界面単一光子源の発光強度制御
14 Mar. 2025

B添加In2O3フレキシブル透明導電膜におけるフレキシブル性の基板依存
14 Mar. 2025

Cu含有PVAフィルムを用いた抵抗変化素子の作製と特性評価
14 Mar. 2025

Strong amorphization in In2O3-based flexible transparent conductive films by hydrogen incorporation and higher sputtering pressure
K. Kibishi, S. Yamadera, T. Kobayashi, I. Takano, S. Aikawa
International Symposium on Semiconductor Manufacturing 2024 (ISSM 2024), 10 Dec. 2024

UV exposure in an oxygen atmosphere at room temperature as a new method for improvement of amorphous oxide TFT characteristics
S. Yamadera, K. Kibishi, S. Aikawa
International Symposium on Semiconductor Manufacturing 2024 (ISSM 2024), 10 Dec. 2024

Fabrication of SnSO4 transparent thin-films using simultaneous oxidation and sulfurization annealing
K. Moriya, D. Watanabe, T. Ogawa, T. Yamaguchi, S. Aikawa
International Symposium on Semiconductor Manufacturing 2024 (ISSM 2024), 10 Dec. 2024

Optimization of post-deposition annealing conditions for p-type SnO fabrication by low-concentration hydrogen sputtering using SnO2 sputtering target
T. Kobayashi, K. Kibishi, S. Aikawa
International Symposium on Semiconductor Manufacturing 2024 (ISSM 2024), 10 Dec. 2024

アモルファスp型TeOxTFTの特性向上に向けたアニール処理の検討
29 Nov. 2024

高温アニールに代わるアモルファス酸化物TFTへの室温UV照射処理
29 Nov. 2024

CuSO4とPVAの混合物を用いた抵抗変化素子の作製と評価
29 Nov. 2024

堅牢なSnO2ターゲットを用いた還元雰囲気スパッタリングと成膜後アニーリングによるSnO製作の最適化
29 Nov. 2024

溶液プロセスp型SnO薄膜トランジスタに向けた溶液調整の検討および薄膜作製
28 Nov. 2024

Ar/H2スパッタ成膜したIn2O3系透明導電膜の屈曲時抵抗変化と成膜時圧力の関係理解
28 Nov. 2024

ITO透明導電膜を用いたSiC/SiO2界面単一光子源の電界制御
25 Nov. 2024

Toward thin In2O3 film growth on SiO2/Si substrate by Mist CVD method
R. Ishikawa, T. Yamamoto, Y. Hayashi, S. Aikawa, T. Onuma, T. Honda, T. Yamaguchi
The 23rd International Symposium on Advanced Technology (ISAT-23), 22 Nov. 2024

Fabrication of SnSO4 transparent thin-films using simultaneous oxidation and sulfurization annealing
K. Moriya, D. Watanabe, T. Ogawa, T. Yamaguchi, S. Aikawa
The 23rd International Symposium on Advanced Technology (ISAT-23), 22 Nov. 2024

Electrical and Optical Properties of Ti-doped ZnO Thin Films
N. Utsu, S. Aikawa, I. Takano
The 23rd International Symposium on Advanced Technology (ISAT-23), 22 Nov. 2024

α-In2O3のMistCVD結晶成長とMOSFET製作時におけるチャネル層膜厚調整方法の検討
18 Nov. 2024

Improvement of hysteresis in non-annealed IBO TFTs by room-temperature UV exposure in oxygen atmosphere
S. Yamadera, K. Kibishi, S. Aikawa
37th International Microprocesses and Nanotechnology Conference (MNC 2024), 15 Nov. 2024

Effect of oxygen pressure on crystal orientation and bonding states of SnSO4 thin films
K. Moriya, D. Watanabe, T. Ogawa, T. Yamaguchi, S. Aikawa
37th International Microprocesses and Nanotechnology Conference (MNC 2024), 15 Nov. 2024

Fabrication of p-type SnO thin film using robust SnO2 target by sputtering and annealing in low-concentration reducing H2 atmosphere
T. Kobayashi, K. Kibishi, S. Aikawa
37th International Microprocesses and Nanotechnology Conference (MNC 2024), 15 Nov. 2024

Improvement of amorphous nature of In2O3-based transparent conductive films by H-doping
K. Kibishi, S. Yamadera, T. Kobayashi, I. Takano, S. Aikawa
37th International Microprocesses and Nanotechnology Conference (MNC 2024), 15 Nov. 2024

Evaluation of Optical Properties of Ti-doped ZnO Transparent Conductive Thin Films
N. Utsu, S. Aikawa, I. Takano
The 10th International Symposium on Surface Science (ISSS-10), 21 Oct. 2024

Dependence of Hydrochloric Acid Concentration Adding to Source Solution in Mist CVD Growth of In2O3 Films on Amorphous SiO2
03 Oct. 2024

硫化アニールによるSnS薄膜作製：硫黄原料粉末仕込み量による高純度化の検討
20 Sep. 2024

硫黄蒸気アニールにより作製したSnSO4の結合状態評価
20 Sep. 2024

還元雰囲気スパッタリングと成膜後アニーリングによるSnO2ターゲットからのSnO製作最適化
20 Sep. 2024

α-Al2O3上及びアモルファスSiO2上へのIn2O3膜Mist CVD成長における原料溶液添加塩酸濃度依存性
19 Sep. 2024

アニーリングによるTiドープZnO透明導電薄膜の特性評価
19 Sep. 2024

CO2センサー応用に向けた溶液プロセスLaドープIn2O3 TFTのバイアスストレス評価
18 Sep. 2024

酸素雰囲気下での室温UV照射によるIBO TFTのヒステリシス改善
18 Sep. 2024

HドーピングによるIn2O3系透明導電膜の弾性率低下
18 Sep. 2024

Cuイオン含有PVAを抵抗変化層に用いたReRAMの溶液濃度依存性
16 Sep. 2024

Mist CVD法サファイア基板上α-Ga2O3, β-Ga2O3薄膜の電気的特性基礎検討
31 Aug. 2024

Formation of silica films with low dielectric constant using molecular precursor method
Y. Murakami, K. Moriya, S. Aikawa, M. Sato, H. Nagai
The 10th International Symposium on Functional Materials (ISFM2024), 04 Aug. 2024

Enhancement of CO2 Gas Sensitivity in In2O3 Thin Film Transistor with a Polar Surface
A. Nodera; S. Aikawa
18th International Thin-Film Transistor Conference (ITC 2024), 28 Mar. 2024

低蛍光強度の透明導電膜を用いたNVセンタの電荷制御
25 Mar. 2024

金属Snを硫化アニールし作製したSnSO4の評価：硫化中の酸素圧力依存
24 Mar. 2024

SnO2スパッタターゲットを用いたSnO製作：Ar/H2および真空中ポストアニールの比較
24 Mar. 2024

金属Sn薄膜の硫化時圧力に依存するSnS表面形態の評価
24 Mar. 2024

SnO層間へのNH3分子インターカレーションの試み
24 Mar. 2024

RFマグネトロンスパッタ法で作製したSnO2:N薄膜のバルク内酸素空孔低減及びバルク内組成の評価
24 Mar. 2024

PVA抵抗変化メモリにおけるNaCl添加の作用
24 Mar. 2024

In2O3系透明導電膜へのHドーピングによる柔軟性劣化機構
24 Mar. 2024

低温Deep UV照射処理されたB-doped In2O3 TFT
24 Mar. 2024

p型アモルファスTaSnOの電気特性に及ぼすスパッタ成膜条件探索
05 Mar. 2024

スパッタ成膜したスズ酸化物と電極間の界面抵抗評価
05 Mar. 2024

Toward CO2 sensors based on In2O3 thin-film transistors
A. Nodera; S. Aikawa
International Symposium of the Vacuum Society of the Philippines (ISVSP), 18 Jan. 2024, [Invited]

Fabrication of Tin Oxide/nitrogen-doped Titanium Dioxide Heterojunction Thin Films
M. Martinez; M. Vasquez Jr.; T. Yamaguchi; S. Aikawa
International Symposium of the Vacuum Society of the Philippines (ISVSP), 18 Jan. 2024

Investigation of Sulfurization Temperature of Metal Sn Thin-Film for High-Quality SnS Synthesis
D. Watanabe; K. Moriya; S. Aikawa
MRM2023/IUMRS-ICA2023, 15 Dec. 2023

Improvement of hysteresis on as-deposited B-doped In2O3 TFTs under O2 plasma exposure
S. Yamadera; K. Kibishi; S. Aikawa
MRM2023/IUMRS-ICA2023, 13 Dec. 2023

Electrical property improvement of Pt-free TiOx-based ReRAM devices using ultrathin SiOx interlayers
H. Osawa; Y. Iwasawa; S. Aikawa
MRM2023/IUMRS-ICA2023, 12 Dec. 2023

Correlation between CO2 sensitivity and Zn concentration in InZnO thin-film transistors
A. Nodera; R. Kobayashi; T. Kobayashi; S. Aikawa
MRM2023/IUMRS-ICA2023, 12 Dec. 2023

Fabrication of SnO Thin Film by Sputtering in Low-Concentration Reducing H2 Atmosphere
T. Kobayashi; T. Kawaguchi; K. Kibishi; S. Aikawa
MRM2023/IUMRS-ICA2023, 12 Dec. 2023

N2雰囲気中RFマグネトロンスパッタリングで作製したSnO2:N薄膜の特性評価
23 Nov. 2023

溶液プロセスで作製したLaドープIn2O3薄膜トランジスタのCO2センシング特性
23 Nov. 2023

硫黄蒸気輸送アニールを用いた金属Sn薄膜の硫化とその評価
23 Nov. 2023

低濃度水素雰囲気中スパッタとアニールを用いたSnO2ターゲットからのSnO製作
23 Nov. 2023

InZnO TFT CO2ガスセンサーにおけるZn濃度と膜厚の影響
22 Nov. 2023

B含有In2O3へ水素ドーピングによる機械的柔軟性への効果
22 Nov. 2023

Effect of In2O3 Channel Thickness in TFT Gas Sensor for CO2 Sensing Characteristics
A. Nodera; R. Kobayashi; S. Yamadera; K. Kibishi; T. Kobayashi; S. Aikawa
36th International Microprocesses and Nanotechnology Conference (MNC 2023), 17 Nov. 2023

Depth profiling of SnO2:N thin films fabricated by RF magnetron sputtering in N2 atmosphere
T. Kawaguchi; T. Kobayashi; S. Aikawa
36th International Microprocesses and Nanotechnology Conference (MNC 2023), 17 Nov. 2023

Reduction of remaining hysteresis in unannealed B-doped In2O3 TFTs by O2 plasma
S. Yamadera; K. Kibishi; A. Nodera; S. Aikawa
36th International Microprocesses and Nanotechnology Conference (MNC 2023), 17 Nov. 2023

La concentration dependence of CO2 sensitivity in solution-processed La-doped In2O3 thin-film transistors
R. Kobayashi; A. Nodera; S. Aikawa
36th International Microprocesses and Nanotechnology Conference (MNC 2023), 17 Nov. 2023

Co-doping of hydrogen and boron in In2O3 toward highly flexible and transparent conducting oxide film
K. Kibishi; S. Yamadera; T. Kobayashi; I. Takano; S. Aikawa
36th International Microprocesses and Nanotechnology Conference (MNC 2023), 17 Nov. 2023

Sn-doped α-Ga2O3 Films Grown Using Sn Source Solutions with Different Aging Times and Their Electrical Properties
Ko. Yamada; T. Yamamoto; R. Yamada; Ka. Yamada; H. Nagai; S. Aikawa; T. Onuma; T. Honda; T. Yamaguchi
The 22nd International Symposium on Advanced Technology (ISAT-22), 19 Oct. 2023

Fabrication of top-down and bottom-up MOSFET using α-In2O3 films grown by Mist CVD
Y. Hayashi; A. Taguchi; S. Yamadera; T. Yamamoto; S. Aikawa; T. Onuma; H. Honda; T. Yamaguchi
The 22nd International Symposium on Advanced Technology (ISAT-22), 19 Oct. 2023

SiOx層挿入によるTiOx系ReRAMの動作安定化
22 Sep. 2023

還元雰囲気中スパッタによるSnO2ターゲットからのSnO製作
19 Sep. 2023

HドープがIn2O3系アモルファス透明導電膜の柔軟性に与える影響
19 Sep. 2023

溶液プロセスで作製したLaドープIn2O3薄膜トランジスタのCO2ガス感度ドーパント濃度依存
19 Sep. 2023

Ar/N2混合ガス中スパッタリングで堆積したSnOx薄膜におけるバルク内N2の評価
19 Sep. 2023

CO2ガスセンシング特性に及ぼすInZnO TFTのZn濃度の影響
19 Sep. 2023

室温製作されたB-doped In2O3 TFTへのO2 plasma処理
19 Sep. 2023

N2 および Ar/H2 アニールによる SnOx 薄膜の還元状態の比較
17 Mar. 2023

Ar/N2混合ガス中スパッタリングで堆積したSnOx薄膜におけるN2濃度の影響
17 Mar. 2023

Mist CVD法により成長したα-In2O3薄膜の低キャリア濃度化とMOSFET製作
16 Mar. 2023

コスパッタ材料としてCaOおよびCaF2を用いたCa添加In2O3 TFTの作製と評価
17 Mar. 2023

N2およびAr/H2アニールによるSnOx薄膜の還元状態の比較
17 Mar. 2023

Ar/N2混合ガス中スパッタリングで堆積したSnOx薄膜におけるN2濃度の影響
17 Mar. 2023

Ar/H2雰囲気中でスパッタ成膜したSnO2薄膜の特性評価
17 Mar. 2023

LaドープIn2O3薄膜トランジスタ特性の測定環境依存
17 Mar. 2023

熱処理不要なIn2O3系TFT実現に向けたBドーピング
17 Mar. 2023

硫黄蒸気輸送アニールを用いたSnS薄膜の作製と評価
17 Mar. 2023

PET基板上に室温スパッタ成膜したBドープIn2O3透明導電膜の酸素分圧最適化
16 Mar. 2023

TiOx系ReRAM特性におけるアニール温度の影響
16 Mar. 2023

BドープIn2O3透明導電膜への水素ドーピングによる電気特性向上
16 Mar. 2023

Mist CVD法により成長したα-In2O3薄膜の低キャリア濃度化とMOSFET製作
16 Mar. 2023

EB照射および熱処理によるC60ナノワイヤの電気・構造的変化
15 Mar. 2023

Improvement of mechanical flexibility using completely amorphous B-doped In2O3 transparent conductive thin films
S. Mori; K. Watanabe; K. Murano; S. Aikawa
7th International Conference on Advances in Functional Materials (AFM 2022), 11 Jan. 2023

N2 concentration dependence of electrical conduction in partially nitrided SnOx thin-films deposited by reactive RF magnetron sputtering
T. Kawaguchi; K. Watanabe; S. Aikawa
7th International Conference on Advances in Functional Materials (AFM 2022), 11 Jan. 2023

CO2 gas sensing using thin-film transistors with co-sputtered In2O3/CaO reactive channel
A. Nodera; S. Mori; S. Aikawa
7th International Conference on Advances in Functional Materials (AFM 2022), 10 Jan. 2023

Hole generation mechanism in n-type SnOx after N2 post-deposition annealing
K. Watanabe; T. Kawaguchi; A. Nodera; Y. Kumamoto; S. Mori; S. Aikawa
7th International Conference on Advances in Functional Materials (AFM 2022), 10 Jan. 2023

CO2 Gas Sensing by In2O3-Based Thin-Film Transistors
A. Nodera; S. Mori; S. Aikawa
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Partial reduction of weakly-bonded oxygen in SnOx thin films by dissociated nitrogen atoms
K. Watanabe; T. Kawaguchi; S. Aikawa
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Room-temperature deposited flexible B-doped In2O3 transparent conductive film
S. Mori; K. Kibishi; S. Yamadera; A. Nodera; K. Watanabe; I. Takano; S. Aikawa
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

XPS analysis of the binding states in nitrogen-doped SnOx thin-films deposited by RF magnetron sputtering in N2 atmosphere
T. Kawaguchi; K. Watanabe; S. Aikawa
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Deposition of nitrogen-doped titanium dioxide thin films via rf magnetron sputtering
M. Martinez; T. Onuma; H. Nagai; T. Honda; S. Aikawa; T. Yamaguchi; M. Vasquez Jr.
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Comparative study of room-temperature deposited ITO and B-doped In2O3 on PET for flexible transparent electrode application
S. Mori; K. Kibishi; S. Yamadera; A. Nodera; K. Watanabe; I. Takano; S. Aikawa
35th International Microprocesses and Nanotechnology Conference (MNC 2022), 10 Nov. 2022

Optimization of N2 concentration in Ar/N2 sputtering deposition for p-type N-doped SnOx thin-film
T. Kawaguchi; K. Watanabe; T. Yamaguchi; T. Onuma; T. Honda; S. Aikawa
35th International Microprocesses and Nanotechnology Conference (MNC 2022), 10 Nov. 2022

Experimental investigation of the local bonding states of nitrogen-doped SnOx thin-film
K. Watanabe; T. Kawaguchi; T. Yamaguchi; T. Onuma; T. Honda; S. Aikawa
35th International Microprocesses and Nanotechnology Conference (MNC 2022), 10 Nov. 2022

Crystal-plane dependence of CO2 sensitivity on In2O3-based thin-film transistors
A. Nodera; S. Mori; S. Aikawa
35th International Microprocesses and Nanotechnology Conference (MNC 2022), 10 Nov. 2022

Indium oxide-based thin film transistor with high CO2 sensitive (400) plane
A. Nodera; S. Mori; S. Aikawa
2022 International Conference on Solid State Devices and Materials (SSDM 2022), 28 Sep. 2022

Nitrogen incorporation in SnO2 matrix for passivation of oxygen vacancy and hole generation
K. Watanabe; T. Kawaguchi; S. Aikawa
2022 International Conference on Solid State Devices and Materials (SSDM 2022), 28 Sep. 2022

Room-temperature processable highly amorphous transparent B-doped In2O3 for use as a flexible conductive film
S. Mori; A. Nodera; K. Watanabe; K. Murano; S. Aikawa
2022 International Conference on Solid State Devices and Materials (SSDM 2022), 27 Sep. 2022

窒素アニール還元反応によるSnOx薄膜の局所結合状態
21 Sep. 2022

Ar/N2混合雰囲気でスパッタ成膜した部分窒化SnOx­­­の特性評価
21 Sep. 2022

In2O3結晶相転移によるTFT型CO2ガスセンサーの特性向上
23 Sep. 2022

Ar/N2混合雰囲気でスパッタ成膜した部分窒化SnOxの特性評価
21 Sep. 2022

窒素アニール還元反応によるSnOx薄膜の局所結合状態
21 Sep. 2022

PET基板上に成膜したITOおよびBドープIn2O3のフレキシブル透明導電膜としての特性比較
20 Sep. 2022

ZrOx系ReRAMにおける電極界面へのSiOx層挿入効果
25 Mar. 2022

In2O3系TFTを用いたCO2ガス検知
23 Mar. 2022

窒素雰囲気スパッタリングおよびアニールしたSnOx薄膜の部分的窒化の影響
23 Mar. 2022

p型窒素ドープSnOxにおけるホール生成の起源
23 Mar. 2022

アモルファスBドープIn2O3透明導電膜における機械的柔軟性の膜厚依存
23 Mar. 2022

Hole移動度向上に向けたSnOx薄膜上へのCYTOP塗布
23 Mar. 2022

In2O3:CaF2透明導電膜の結晶構造および結合状態解析
23 Mar. 2022

低蛍光強度の透明導電膜の形成
23 Mar. 2022

p-type conversion of n-type SnOx thin-films by post-deposition N2 annealing
K. Watanabe; T. Kawaguchi; N. Wakabayashi; T. Yamaguchi; T. Onuma; T. Honda; S. Aikawa
Material Research Meeting 2021 (MRM2021), 14 Dec. 2021

Remarkable mechanical flexibility of intentionally strain-induced amorphous B-doped In2O3 transparent conductive film
S. Mori; Y. Ichinoseki; K. Watanabe; K. Murano; K. Oe; S. Aikawa
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Trade-off relation of F concentration in CaF2 co-sputtered In2O3-based transparent conductive film
K. Oe; S. Mori; K. Watanabe; S. Aikawa
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

p-type behavior of lattice-expanded SnOx by post-deposition N2 annealing
K. Watanabe; T. Kawaguchi; S. Aikawa
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Understanding the switching mechanism of stacked ZrO2-based ReRAM by insertion of SiOx thin layer at the electrode interfaces
K. Toyama; R. Akiyama; K. Yuki; S. Aikawa
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

歪み導入したアモルファスBドープIn2O3透明導電膜の機械的柔軟性
18 Nov. 2021

反応性スパッタにより作製したn型SnOx薄膜へのN2アニールによる結合状態と電気特性への影響
18 Nov. 2021

CaF2とコスパッタ成膜したIn2O3透明導電薄膜の光学的および電気的特性評価
18 Nov. 2021

Role of Ca in CaF2 incorporated In2O3 transparent conductive films
K. Oe; S. Mori; K. Watanabe; H. Nagai; T. Yamaguchi; T. Onuma; T. Honda; S. Aikawa
34th International Microprocesses and Nanotechnology Conference (MNC 2021), 29 Oct. 2021

Demonstration of flexible transparent conductive film using B-doped In2O3
S. Mori; Y. Ichinoseki; K. Watanabe; K. Murano; K. Oe; H. Nagai; T. Yamaguchi; T. Onuma; T. Honda; S. Aikawa
34th International Microprocesses and Nanotechnology Conference (MNC 2021), 29 Oct. 2021

Improvement of noble metal-free ReRAM characteristics by insertion of thin SiOx layer at the ZrOx/electrode interfaces
K. Toyama; R. Akiyama; K. Yuki; S. Aikawa
34th International Microprocesses and Nanotechnology Conference (MNC 2021), 26 Oct. 2021

Charge transfer and conduction type conversion in n-type SnO2 thin films by nitrogen annealing
K. Watanabe; T. Kawaguchi; T. Yamaguchi; T. Onuma; T. Honda; S. Aikawa
34th International Microprocesses and Nanotechnology Conference (MNC 2021), 26 Oct. 2021

CaF2ドープIn2O3透明導電膜における表面ラフネスおよび導電率のドーパント濃度依存性
12 Sep. 2021

BドープIn2O3透明導電膜における微量不純物濃度での移動度向上
12 Sep. 2021

窒素アニールによるn型SnO2薄膜の電荷移動と伝導型変換
12 Sep. 2021

Post-deposition N2 annealing of n-type SnOx thin-films for carrier-type conversion
K. Watanabe; S. Aikawa
2021 International Conference on Solid State Devices and Materials (SSDM 2021), 07 Sep. 2021

窒素アニールによるn型SnOx薄膜の伝導型変換
03 Sep. 2021

CaF2ドープ In2O3透明導電膜におけるCaとFの効果
03 Sep. 2021

BドープIn2O3透明導電膜におけるドーパント濃度の依存性
02 Sep. 2021

SiOx層挿入によるZrOx系ReRAMの動作サイクル改善
19 Mar. 2021

In2O3系透明導電膜におけるFの有効ドーピング濃度
19 Mar. 2021

高性能p型SnO TFTに向けた窒素アニール条件の検討
17 Mar. 2021

PET基板上ITO透明導電膜へのストレス印加による電気的・形態的変化
17 Mar. 2021

ホウ素ドープ酸化インジウム透明導電膜に対するアニール条件の比較
17 Mar. 2021

In2O3 TFTバックチャネルへの絶縁膜溶液塗布の影響
17 Mar. 2021

Enhancement of electrical stability of ZrOx-based ReRAM by insertion of SiOx interlayers
K. Toyama; D. Naniwa; S. Aikawa
MANA International Symposium 2021, 02 Mar. 2021

Optimization of fluorine concentration in In2O3 transparent conductive film
K. Oe; S. Aikawa
MANA International Symposium 2021, 02 Mar. 2021

Si-based Schottky barrier solar cells using boron incorporated In2O3 transparent electrode
S. Aikawa; Y. Shibata; Y. Morinaga
21st International Union of Materials Research Societies- International Conference in Asia (IUMRS-ICA 2020), 26 Feb. 2021

Electrical characterization of ReRAM using ZrOx/SiOx resistive switching layer
K. Toyama; S. Aikawa
21st International Union of Materials Research Societies- International Conference in Asia (IUMRS-ICA 2020), 25 Feb. 2021

Fabrication and characterization of In2O3 transparent conductive films co-sputtered with CaF2
K. Oe; S. Aikawa
21st International Union of Materials Research Societies- International Conference in Asia (IUMRS-ICA 2020), 25 Feb. 2021

Electrical characterization of Zr-based ReRAM with a sandwiched resistive switching layer
K. Toyama; D. Naniwa; S. Aikawa
The 19th International Symposium on Advanced Technology (ISAT-19), 14 Jan. 2021

Fluorine concentration dependence on electrical and optical properties of In2O3 transparent film
K. Oe; S. Aikawa
The 19th International Symposium on Advanced Technology (ISAT-19), 14 Jan. 2021

Comparative characterization of Si Schottky solar cells using B‐doped In2O3 and ITO transparent electrodes
S. Aikawa; Y. Shibata; Y. Morinaga
33rd International Microprocesses and Nanotechnology Conference (MNC 2020), 09 Nov. 2020

Investigation of CaF2 doping on electrical and optical properties of In2O3 transparent conductive film
K. Oe; S. Aikawa
33rd International Microprocesses and Nanotechnology Conference (MNC 2020), 09 Nov. 2020

Influence of SiOx interlayer on electrical properties of noble metal-free ZrOx-based resistive switching memory devices
K. Toyama; D. Naniwa; S. Aikawa
33rd International Microprocesses and Nanotechnology Conference (MNC 2020), 09 Nov. 2020

B-doped In2O3 Transparent Electrode for Si-based Schottky Barrier Solar Cell Application
S. Aikawa; Y. Shibata; Y. Morinaga
IEEE NANO 2020: the 20th IEEE International Conference on Nanotechnology, 30 Jul. 2020

修飾ゲート絶縁膜表面の濡れ性がアモルファスIn2O3TFTの電気的特性に及ぼす影響
15 Mar. 2020

CaF2をコスパッタした酸化インジウム透明導電膜の作製と評価
15 Mar. 2020

ZrOx/SiOx二層抵抗変化層を用いたReRAMの電気特性評価
13 Mar. 2020

Light-isolation of micro-LED pixels integrated in Si micro-cup substrate
K. Sato; Y. Kamei; R. Nawa; S. Aikawa; Y. Ushida; T. Onuma; T. Yamaguchi; T. Honda
The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), 11 Nov. 2019

Hydrophobic Fluoropolymer Interlayer between In2O3 Semiconductor and SiO2 Gate Insulator for Improvement of Thin-Film Transistor Performance
K. Sasaki; K. Nakamura; Y. Shibata; S. Aikawa
32nd International Microprocesses and Nanotechnology Conference (MNC 2019), 31 Oct. 2019

Investigation of measurement environmental sensitivity in amorphous indium oxide-based thin-film transistors
K. Nakamura; K. Sasaki; Y. Shibata; K. Oe; S. Aikawa
32nd International Microprocesses and Nanotechnology Conference (MNC 2019), 29 Oct. 2019

Electrical properties of In2O3 thin-film transistors under vacuum and inert environments
K. Nakamura; K. Sasaki; Y. Shibata; K. Oe; S. Aikawa
AVS 66th International Symposium & Exhibition, 24 Oct. 2019

Fabrication of LED pixels of 16 x 16 array structure using Si micro-cup substrate
K. Sato; Y. Kamei; R. Nawa; S. Aikawa; Y. Ushida; T. Onuma; T. Yamaguchi; T. Honda
The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), 09 Jul. 2019

Fabrication of micro-LED display of 16 x 16 array structure using Si micro-cup substrate
K. Sato; Y. Kamei; R. Nawa; S. Aikawa; Y. Ushida; T. Onuma; T. Yamaguchi; T. Honda
The 7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'19), 24 Apr. 2019

TFT素子安定化に向けたアモルファスInSiO薄膜
30 Mar. 2018, [Invited]

Fabrication of TFT using amorphous In2O3 thin film by mist CVD
T. Kobayashi; K. Sawamoto; S. Aikawa; T. Yamaguchi; T. Onuma; T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 01 Nov. 2017

Si-Incorporated Amorphous Indium Oxide-Based Thin-Film Transistors for Stable Operation
S. Aikawa
BIT’s 7th Annual World Congress of Nano Science & Technology – 2017, 24 Oct. 2017, [Invited]

急峻なサブスレッショルドスロープを持つALD-AlOxゲート絶縁膜アモルファスInSiO TFT
07 Sep. 2017

ALDで形成した薄膜InOx高移動度TFT
07 Sep. 2017

Unipolar n-type conversion of carbon nanotube field-effect transistors passivated by positively charged polymer
S. Aikawa
IUMRS-ICAM 2017: The 15th International Conference on Advanced Materials, 30 Aug. 2017, [Invited]

酸化物透明導電膜およびアモルファス酸化物TFTに向けた実用材料開発
13 Jul. 2017

Incorporation of high bond-dissociation energy dopants for low-temperature processable stable InOx-based thin-film transistors
S. Aikawa
CCMR 2017: Collaborative Conference on Materials Research 2017, 29 Jun. 2017, [Invited]

逆電解処理によるGaAsナノワイヤTFTの移動度向上
14 Sep. 2016

Hydrogen Exposure Effects on Anodically Etched GaAs Nanowires in Liquid Electrolyte
S. Aikawa; K. Yamada; H. Hashimoto; H. Asoh; S. Ono
IEEE NANO 2016: 16th INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, 23 Aug. 2016

Mist-CVD-Grown Crystalline In2O3 Thin-Film Transistors with Low Off-State Current
S. Aikawa; K. Tanuma; T. Kobayashi; T. Yamaguchi; T. Onuma; T. Honda
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), 11 Aug. 2016

製造プロセスに鈍感な新元素構成アモルファス酸化物薄膜トランジスタ
12 Jul. 2016

アノードエッチングにより作製したGaAsナノワイヤの電気特性に対する湿式水素曝露効果
20 Mar. 2016

二層InSiO薄膜トランジスタの水素還元とオゾン酸化効果
19 Mar. 2016

Electrical and Structural Characterization of Anodically Etched GaAs Nanowires Towards Functional Electronic Devices
S. Aikawa; K.Yamada; H. Asoh; H. Hashimoto; Y.-I. Kim; E. Nishikawa; S. Ono
28th International Microprocesses and Nanotechnology Conference (MNC 2015), 12 Nov. 2015

Low-temperature Processable Amorphous In-W-O Thin-film Transistors
T. Kizu; S. Aikawa; N. Mitoma; M. Shimizu; X. Gao; M-F. Lin; T. Nabatame; K. Tsukagoshi
The 9th International Conference on the Science and Technology for Advanced Ceramics (STAC-9) & The 9th Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-9), 20 Oct. 2015

アノードエッチングで作製したGaAsナノワイヤの電気伝導特性
15 Oct. 2015

二層InSiO構造を用いた薄膜トランジスタ
15 Sep. 2015

過剰酸素の抑制による真空環境で安定なIn-Si-O TFT
13 Sep. 2015

アノードエッチングで作製したGaAsナノワイヤの表面構造と物性評価
12 Sep. 2015

アモルファス酸化インジウム薄膜トランジスタにおける電荷密度および移動度の添加元素依存性
11 Mar. 2015

低温プロセスで高移動度かつ高安定なa-InWO TFT
18 Sep. 2014

シリコン添加により制御された酸化インジウム薄膜トランジスタ
18 Sep. 2014

Influence of electrical properties for IGZO TFT with Al₂O₃ gate insulators by PE-ALD method
K. Kurishima; T. Nabatame; M. Shimizu; S. Aikawa; K. Tsukagoshi; A. Ohi; T. Chikyo; A. Ogura
14th International Conference on Atomic Layer Deposition 2014 (ALD 2014), 17 Jun. 2014

Fabrication and Characterization of Nitrogen-Induced Single-Walled Carbon Nanotubes Field-Effect Transistors
S. Kim; T. Thurakitseree; S. Aikawa; T. Inoue; S. Chiashi; S. Maruyama
The Fifteenth International Conference on the Science and Application of Nanotubes, 04 Jun. 2014

Influence of Al₂O₃ Gate Dielectric on Transistor Properties for Igzo Thin Film Transistor
Kazunori Kurishima; Toshihide Nabatame; Maki Shimizu; Shinya Aikawa; Kazuhito Tsukagoshi; Akihiko Ohi; Toyohiro Chikyow; Atsushi Ogura
225th ECS Meeting, 14 May 2014

PE-ALD法で作製したAl₂O₃絶縁膜を用いたIGZO-TFTの電気特性
19 Mar. 2014

PE-ALD法で作製したAl₂O₃絶縁膜を用いたIGZO-TFTの電気特性の変化
24 Jan. 2014

Transport characteristics for nitrogen-doped horizontally aligned single-walled carbon nanotubes
Sungjin Kim; Theerapol Thurakitseree; Shinya Aikawa; Taiki Inoue; Shohei Chiashi; Shigeo Maruyama
4th A3 Symposium on Emerging Materials: Nanomaterials for Energy and Electronics, 13 Nov. 2013

Highly Stable n-Doped Graphene Field-Effect Transistors via Polyvinyl Alcohol Films
Sungjin Kim; Pei Zhao; Shinya Aikawa; Erik Einarsson; Shohei Chiashi; Shigeo Maruyama
5th International Conferences on Recent Progress in Graphene Research, 12 Sep. 2013

InOx-based metal oxide semiconductors for TFT applications
S. Aikawa
Workshop on Molecular Thermal Engineering, 05 Jul. 2013

Fabrication of Flexible Graphene Field-Effect Transistors with Single-Walled Carbon Nanotube Electrodes
Sungjin Kim; Shinya Aikawa; Pei Zhao; Bo Hou; Erik Einarsson; Shohei Chiash; Shigeo Maruyama
2012 MRS Fall Meeting, 29 Nov. 2012

Single-walled Carbon Nanotube/Silicon Heterojunction Photovoltaic Cell
Kehang Cui; Shuichiro Omiya; Pei Zhao; Theerapol Thurakitseree; Shinya Aikawa; Shohei Chiashi; Shigeo Maruyama
2012 MRS Fall Meeting, 29 Nov. 2012

Influence of Polymer Coating on Device Properties of Carbon Nanotube Field-Effect Transistors
Shinya Aikawa; Taiki Inoue; Erik Einarsson; Shohei Chiashi; Shigeo Maruyama
2012 International Conference on Solid State Devices and Materials (SSDM 2012), 26 Sep. 2012

Optimization of Single-Walled Carbon Nanotube/Silicon Heterojunction Solar Cells
12 Sep. 2012

水中アーク放電を用いた金属内包カーボンナノチューブ合成における陰極金属の沸点の影響
11 Sep. 2012

Development of Carbon Nanotube Flexible Transistors
28 Jul. 2012

Tailored Synthesis of Single-walled Carbon Nanotubes for Applications
Erik Einarsson; Theerapol Thurakitseree; Shinya Aikawa; Christian Kramberger; Shohei Chiashi; Eiichi Nishikawa; Shigeo Maruyama
International Conference of Young Researchers on Advanced Materials (ICYRAM 2012), 04 Jul. 2012

Characterization of single-walled carbon nanotubes and graphene-based field-effect transistors
Sungjin Kim; Shinya Aikawa; Pei Zhao; Erik Einarsson; Shohei Chiashi; Shigeo Maruyama
2nd International Symposium on Terahertz Nanoscience, 04 Jul. 2012

CVD synthesis of small-diameter nitrogen-doped single-walled carbon nanotubes using acetonitrile
Erik Einarsson; Theerapol Thurakitseree; Christian Kramberger; Pei Zhao; Shinya Aikawa; Shohei Chiashi; Shigeo Maruyama
Thirteenth International Conference on the Science and Application of Nanotubes, 24 Jun. 2012

Influence of nitrogen incorporation on the diameter of single-walled carbon nanotubes
Theerapol Thurakitseree; Christian Kramberger; Pei Zhao; Shinya Aikawa; Sivasankaran Harish; Shohei Chiashi; Erik Einarsson; Shigeo Maruyama
Thirteenth International Conference on the Science and Application of Nanotubes, 24 Jun. 2012

Deformable carbon nanotube transistor using polyvinyl alcohol dielectrics
S. Aikawa
International Workshop on Carbon Nanotubes and Graphene, 15 Jun. 2012

Ambipolar Behavior in All-Carbon-Nanotube Field-Effect Transistors by Poly(Vinyl Alcohol) Coating
Shinya Aikawa; Taiki Inoue; Erik Einarsson; Theerapol Thurakitseree; Shohei Chiashi; Shigeo Maruyama
CNTNE2012: International Symposium on Carbon Nanotube Nanoelectronics, 12 Jun. 2012

Characterization of single-walled carbon nanotube and graphene composite devices
Sungjin Kim; Shinya Aikawa; Pei Zhao; Erik Einarsson; Shohei Chiashi; Shigeo Maruyama
CNTNE2012: International Symposium on Carbon Nanotube Nanoelectronics, 12 Jun. 2012

透明なカーボンナノチューブフレキシブルトランジスタ
01 Jun. 2012

Deformable Transparent All-Carbon-Nanotube Transistors
S. Aikawa
Aalto-Tokyo International Workshop of Carbon Nanotubes, 27 Mar. 2012

Reducing the diameter of vertically aligned single-walled carbon nanotubes by nitrogen doping: synthesis and spectroscopy study
27 Mar. 2012

変形可能な透明オールナノチューブトランジスタ
27 Mar. 2012

Reducing the diameter of vertically aligned single walled carbon nanotubes by Nitrogen doping: Synthesis and Spectroscopy study
T. Thurakitseree; C. Kramberger; P. Zhao; S. Aikawa; S. Harish; S. Chiashi; E. Einarsson; S. Maruyama
26th International Winterschool on Electronic Properties of Novel Materials (IWEPNM 2012), 08 Mar. 2012

as-grown単層CNTを用いた薄膜トランジスタの作製と特性評価
08 Mar. 2012

アセトニトリルを用いた小径・窒素ドープ単層CNTのCVD合成
06 Mar. 2012

Toward graphene and single-walled carbon nanotube composite devices
06 Mar. 2012

Thermal Conductivity of Single-Walled Carbon Nanotube Suspensions in Ethylene Glycol: Experimental Results and Theoretical Limits
S. Harish; K. Ishikawa; E. Einarsson; S. Aikawa; M. Watanabe; S. Chiashi; J. Shiomi; S. Maruyama
4th International Symposium on Heat Transfer and Energy Conservation (ISHTEC 2012), 07 Jan. 2012

Increasing the Thermal Conductivity of Fluids by adding Single-Walled Carbon Nanotubes encapsulated in Sodium Deoxycholate
S. Harish; K. Ishikawa; E. Einarsson; T. Inoue; S. Aikawa; P. Zhao; S. Chiashi; J. Shiomi; S. Maruyama
7th US-Japan Joint Seminar on Nanoscale Transport Phenomena - Science and Engineering -, 12 Dec. 2011

Simple Synthesis Method for Carbon Nanotubes from Aromatic Compounds by Liquid-Phase Arc Plasma
Takio Kizu; Kentaro Takekoshi; Shinya Aikawa; Eiichi Nishikawa
6th International Symposium on Surface Science (ISSS-6), 12 Dec. 2011

One-Step Encapsulation of Metal Particle with High-Melting into Carbon Nanotubes by Pulsed Arc Discharge in Water
Kentaro Takekoshi; Takio Kizu; Shinya Aikawa; Eiichi Nishikawa
6th International Symposium on Surface Science (ISSS-6), 12 Dec. 2011

Fabrication of flexible thin film transistors using single-walled carbon nanotubes and graphene
S.J. Kim; S. Aikawa; B. Hou; E. Einarsson; S. Chiashi; and S. Maruyama
24th International Microprocesses and Nanotechnology Conference (MNC 2011), 27 Oct. 2011

Extremely Flexible All-Carbon Nanotube Field-Effect Transistors Without Device Degradation
Shinya Aikawa; Erik Einarsson; Shohei Chiashi; Eiichi Nishikawa; Shigeo Maruyama
24th International Microprocesses and Nanotechnology Conference (MNC 2011), 26 Oct. 2011

Synthesis of small-diameter single-walled carbon nanotubes from acetonitrile
Theerapol Thurakitseree; Christian Kramberger; Pei Zhao; Shinya Aikawa; S. Harish; Shohei Chiashi; Erik Einarsson; Shigeo Maruyama
A3 Symposium of Emerging Materials: Nanomaterials for Energy & Environments, 13 Oct. 2011

Toward the Realization of Narrow Diameter Distribution in As-Grown Single-Walled Carbon Nanotubes
T. Thurakitseree; C. Kramberger; S. Aikawa; P. Zhao; S. Harish; S. Chiashi; E. Einarsson; S. Maruyama
TeraNano PIRE Kick-Off Meeting, 07 Oct. 2011

Ambipolar Conversion of Polymer-Coated All Single-Walled Carbon Nanotube Field-Effect Transistors
Shinya Aikawa; Erik Einarsson; Shohei Chiashi; Eiichi Nishikawa; Shigeo Maruyama
2011 International Conference on Solid State Devices and Materials (SSDM 2011), 29 Sep. 2011

液中金属間パルスアーク法によるカーボンナノチューブ合成と電極表面の時間変化観察
21 Sep. 2011

水中パルスアーク放電による金属内包カーボンナノチューブの一段合成：充填率のパルス幅依存性
21 Sep. 2011

変形可能なオールナノチューブ両極性トランジスタ
15 Sep. 2011

貼り合わせ法で作製されたオールナノチューブフレキシブルトランジスタの特性評価
07 Sep. 2011

液中金属間アーク法によるカーボンナノチューブ合成と液中プラズマの発光分析
07 Sep. 2011

水中パルスアーク放電を用いた金属内包カーボンナノチューブのワンステップ合成
07 Sep. 2011

アセトニトリルからの（６，５）単層カーボンナノチューブの選択的合成
06 Sep. 2011

液中パルスアーク法によるキシレンからのカーボンナノチューブ合成
31 Aug. 2011

水中パルスアーク放電による金属内包カーボンナノチューブの一段合成
31 Aug. 2011

変形可能なオールカーボンナノチューブ両極性トランジスタ
30 Aug. 2011

Flexible, Transparent, and Metal-Free Single-Walled Carbon Nanotube Field-Effect Transistors
Shinya Aikawa; Erik Einarsson; Taiki Inoue; Shohei Chiashi; Junichiro Shiomi; Eiichi Nishikawa; Shigeo Maruyama
NT11: International Conference on the Science and Application of Nanotubes, 11 Jul. 2011

柔軟で透明，金属不要な単層カーボンナノチューブトランジスタ
03 Jun. 2011

極めて柔軟な all-SWNT 電界効果トランジスタ
26 Mar. 2011

Effect of catalyst preparation on diameter of single-walled carbon nanotubes synthesized by alcohol CVD
Theerapol Thurakitseree; Erik Einarsson; Rong Xiang; Shinya Aikawa; Shohei Chiashi; Junichiro Shiomi; Shigeo Maruyama
APS March Meeting 2011, 23 Mar. 2011

非常に柔軟なAll-SWNT電界効果トランジスタ
08 Mar. 2011

Carbon Nanotubes Synthesis in Liquid Xylene by Low-frequency Pulsed Arc Discharge Using Copper Electrodes: An Effect of Current Waveform
Takio Kizu; Shinya Aikawa; Kentarou Takekoshi; Eiichi Nishikawa
ISPlasma 2011: 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 07 Mar. 2011

Highly Flexible All-SWNT Field-Effect Transistors
04 Mar. 2011

High-precision localized growth of single-walled carbon nanotubes and its applications
R. Xiang; S. Aikawa; E. Einarsson; S. Maruyama
The 2010 International Chemical Congress of Pacific Basin Societies (Pacifichem), 20 Dec. 2010

Carbon nanotubes synthesis in liquid xylene by low-frequency pulsed arc discharge using metal electrodes
Takio Kizu; Shinya Aikawa; Masakazu Okabe; Eiichi Nishikawa
The 2010 International Chemical Congress of Pacific Basin Societies (Pacifichem), 17 Dec. 2010

Precisely localized synthesis of single-walled carbon nanotubes for applications
E. Einarsson; S. Aikawa; R. Xiang; S. Chiashi; J. Shiomi; E. Nishikawa; S. Maruyama
The 2010 International Chemical Congress of Pacific Basin Societies (Pacifichem), 17 Dec. 2010

収束電子線照射でスパッタされたニッケル微粒子によるアモルファスカーボン薄膜のグラファイト化
02 Dec. 2010

One-Step Fabrication of High-Performance All-SWNT Field-Effect Transistors by Patterned Growth Technique
Shinya Aikawa; Rong Xiang; Erik Einarsson; Shohei Chiashi; Shigeo Maruyama
A3 Symposium on Emerging Materials : Nanocarbons and Nanowires for Energy, 09 Nov. 2010

Horizontally-alignment growth of single-walled carbon nanotubes on quartz substrates
Shohei Chiashi; Taiki Inoue; Theerapol Thurakitseree; Shinya Aikawa; Rong Xiang; Junichiro Shiomi; Shigeo Maruyama
A3 Symposium on Emerging Materials : Nanocarbons and Nanowires for Energy, 09 Nov. 2010

Liquid-based site-selective deposition of catalyst for SWNT growth : Mechanism and applications
Rong Xiang; Shinya Aikawa; Erik Einarsson; Taiki Inoue; Shohei Chiashi; Zi Kang Tang; Shigeo Maruyama
A3 Symposium on Emerging Materials : Nanocarbons and Nanowires for Energy, 09 Nov. 2010

液相アーク放電によるキシレンからのカーボンナノチューブ合成と生成物の突入電流依存性
06 Nov. 2010

液中アーク放電法による酸化ナトリウムナノワイヤーの合成
06 Nov. 2010

水中アーク放電を用いたカーボンナノチューブ合成における放電安定化と生成物の評価
06 Nov. 2010

スクロース溶液中でのアーク放電における生成物の濃度依存
06 Nov. 2010

Characterization of field-effect transistors using high-quality as-grown SWNTs from alcohol CVD
Shinya Aikawa; Rong Xiang; Erik Einarsson; Shohei Chiashi; Junichiro Shiomi; Eiichi Nishikawa; Shigeo Maruyama
AsiaNANO 2010, 02 Nov. 2010

Diameter controlled CVD synthesis of single-walled carbon nanotubes
Theerapol Thurakitseree; Erik Einarsson; Rong Xiang; Shinya Aikawa; Shohei Chiashi; Junichiro Shiomi; Shigeo Maruyama
AsiaNANO 2010, 01 Nov. 2010

単層カーボンナノチューブの直径制御CVD合成
15 Oct. 2010

Nano-DDSへの応用を考慮した金属内包CNTの合成
15 Oct. 2010

単層CNTのパターン合成による高性能FET簡易作製
14 Oct. 2010

Simple Fabrication Technique for an Array of Field-effect Transistors Using High-quality as-grown Single-walled Carbon Nanotubes from Dip-coated Cat-alyst by Substrate Surface Modification
Shinya Aikawa; Rong Xiang; Erik Einarsson; Shohei Chiashi; Junichiro Shiomi; Eiichi Nishikawa; Shigeo Maruyama
2010 International Conference on Solid State Devices and Materials (SSDM 2010), 23 Sep. 2010

単層カーボンナノチューブの水晶基板上における水平成長メカニズム
16 Sep. 2010

高性能all-SWNT電界効果トランジスタの作製と特性評価
07 Sep. 2010

R面(101)水晶基板上でのSWNT水平配向成長
07 Sep. 2010

Carbon nanotubes synthesis in liquid xylene by low-frequency pulsed arc discharge using metal electrodes: An effect of inrush current
Takio Kizu; Shinya Aikawa; Kentarou Takekoshi; Eiichi Nishikawa
The 16th International Conference on Crystal Growth(ICCG-16), 12 Aug. 2010

R面水晶基板上でのカーボンナノチューブの水平配向成長
02 Aug. 2010

Characterization of Thin Film Transistor Using As-grown Single-walled Carbon Nanotubes from Dip-coated Catalyst by Patterned Removal of Self-assembled Monolayer
Shinya Aikawa; Rong Xiang; Erik Einarsson; Asahi Kitabatake; Shohei Chiashi; Junichiro Shiomi; Eiichi Nishikawa; Shigeo Maruyama
Eleventh International Conference on the Science and Application of Nanotubes, 01 Jul. 2010

基板の表面改質を利用した選択的触媒担持法によるas-grown単層カーボンナノチューブFETの作製と特性評価
14 May 2010

Patterned CVD Growth of Single-Walled Carbon Nanotubes for a Thin-Film Transistor
Shigeo Maruyama; Rong Xiang; Shinya Aikawa; Erik Einarsson; Shohei Chiashi; Junichiro Shiomi
2010 MRS Spring Meeting, 08 Apr. 2010

収束電子線照射で生成されたニッケルナノ粒子によるアモルファスカーボン薄膜のグラファイト化
19 Mar. 2010

液相アーク放電によるキシレンからのカーボンナノチューブ合成においてアークプラズマの特性が合成物へ与える影響
19 Mar. 2010

単層カーボンナノチューブのパターン成長法を用いた薄膜トランジスタの作製と特性評価
18 Mar. 2010

One-step Fabrication of Single-Walled Carbon Nanotubes Thin Film Transistor by Patterned Growth
02 Mar. 2010

溶液を炭素原子供給源 を炭素原子供給源とする液中アーク放電による,カーボンナノチューブの合成
03 Feb. 2010

Graphitization of an Amorphous Carbon Film under Electron Beam Irradiation Catalysed by Metal Particles
S. Aikawa; T. Kizu; E. Nishikawa
7th International Symposium on Atomic Level Characterizations for New Materials and Devices '09, 08 Dec. 2009

Carbon Nanotubes Synthesis in Water by Arc Discharge Using Metal Electrodes
T. Kizu; S. Aikawa; E. Nishikawa
7th International Symposium on Atomic Level Characterizations for New Materials and Devices '09, 08 Dec. 2009

水中アーク放電法をベースとした金属電極間放電によるスクロース溶液からの多層カーボンナノチューブの合成
14 Nov. 2009

液相アーク放電によるキシレンからのカーボンナノチューブ合成において電極材料が合成物へ与える影響
14 Nov. 2009

スクロース溶液の濃度を変化させた場合における液中アーク放電の特性とその生成物
14 Nov. 2009

Patterned Growth of SWNTs for Facile Fabrication of Field Effect Transistor Device
Shinya Aikawa; Rong Xiang; Erik Einarsson; Junichiro Shiomi; Eiichi Nishikawa; Shigeo Maruyama
The 6th Korea-Japan Symposium on Carbon Nanotube, 27 Oct. 2009

Optimization of catalyst deposition by spin-coating for synthesis of vertically-aligned single-walled carbon nanotube arrays
15 Oct. 2009

High Precision Site-selective Growth of SWNTs and its Applications
03 Sep. 2009

Carbon Nanotubes Synthesis in Liquid Xylene by Arc Discharge Using Metal Electrodes
03 Sep. 2009

Facile Fabrication and characterization of a Field Effect Transistor using As-grown Single-Walled Carbon Nanotubes
02 Sep. 2009

Precisely Localized As-grown Single-Walled Carbon Nanotubes for Facile Fabrication of a Field Effect Transistor Device
Shinya Aikawa; Rong Xiang; Erik Einarsson; Junichiro Shiomi; Eiichi Nishikawa; Shigeo Maruyama
10th International Conference on the Science and Application of Nanotubes (NT09), 25 Jun. 2009

Carbon nanomaterial synthesis from o-xylene using arc discharge method with copper electrodes
02 Feb. 2009

水中アーク放電法による異種電極材料を用いたカーボンナノマテリアルの合成
02 Sep. 2008

スクロースからのカーボン・ナノマテリアルの合成
29 Mar. 2008

水中アーク放電法による異種電極材料を用いたカーボンナノマテリアルの合成
05 Sep. 2007

柔軟・室温形成可能な従来材料よりも透明な導電薄膜
Aug. 2021 - Sep. 2021, Others

移動度と動作安定性を同時に向上させた2層薄膜トランジスタ
Aug. 2019 - Aug. 2019, Others

現行プロセスに完全コンパチブルな新開発透明導電膜
Aug. 2018 - Aug. 2018, Others

既存材料ITOを凌駕する超透明な酸化物導電膜
Oct. 2017 - Oct. 2017, Others

既存材料ITOを凌駕する超透明な酸化物導電膜
Aug. 2017 - Sep. 2017, Others

酸化物透明導電膜およびアモルファス酸化物TFTに向けた実用材料開発
Jul. 2017 - Jul. 2017, Others

有機ELディスプレイの高効率化に貢献できる高仕事関数を有する透明導電膜
Aug. 2016 - Aug. 2016, Others

製造条件に左右されない高安定なアモルファス酸化薄膜トランジスタ
Aug. 2015 - Aug. 2015, Others

特願2020-030951, 透明導電膜の形成方法、透明導電膜、導電膜付基板、及びタッチパネル

特許登録第6440169号, 特願2015-508772, 有機ＥＬ素子及びその製造方法

特許登録第6308583号, 特願2014-016635, 薄膜トランジスタ、薄膜トランジスタの製造方法および半導体装置

特許登録第6296463号, 特願2016-213693, 薄膜トランジスタおよびその製造方法

特許登録第6273606号, 特願2014-016633, 固定電荷を内部に誘起したゲート絶縁膜

特許登録第6261125号, 特願2014-016630, 酸化物薄膜トランジスタおよびその製造方法

特許登録第6260992号, 特願2014-016634, 薄膜トランジスタおよびその製造方法

特許登録第6252903号, 特願2014-016273, 薄膜トランジスタおよびその製造方法

特許登録第6252904号, 特願2014-016631, 酸化物半導体およびその製法

9825180, 15/248567, THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
T. Nabatame; K. Tsukagoshi; S. Aikawa; T. Chikyo

特許登録第6241848号, 特願2014-016632, 薄膜トランジスタの構造、薄膜トランジスタの製造方法および半導体装置

9741864, 14/889919, THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
T. Nabatame; K. Tsukagoshi; S. Aikawa

特願2017-119702, 透明導電膜、透明導電膜つき透明基板、透明導電膜つき透明基板の製造方法、タッチパネル

特許登録第6120386号, 特願2015-515874, 薄膜トランジスタおよびその製造方法

特願2016-244357, メガネ型装具

特願2016-094691, ドーピング方法、導電性構造体の製造方法、繊維状構造の製造方法、及び薄膜トランジスタの製造方法

特許登録第5846563号, 特願2014-521410, 薄膜トランジスタ、薄膜トランジスタの製造方法および半導体装置

PCT/JP2015/051845, 薄膜トランジスタ、酸化物半導体、およびその製造方法

PCT/JP2014/062188, 薄膜トランジスタおよびその製造方法

PCT/JP2014/059190, 有機ＥＬ素子及びその製造方法

特願2014-016266, 薄膜トランジスタおよびその製造方法

特願2013-139425, 薄膜トランジスタおよびその製造方法

PCT/JP2013/066384, 薄膜トランジスタ、薄膜トランジスタの製造方法および半導体装置

10-2014-7012459, 薄膜トランジスタ、薄膜トランジスタの製造方法および半導体装置

特願2013-099284, 薄膜トランジスタおよびその製造方法

特願2013-067782, 有機ＥＬ素子

特願2013-067801, 有機ＥＬ素子及びその製造方法

特願2013-068164, 有機ＥＬ素子及びその製造方法

特願2008-97578, カーボンナノ粒子及びカーボンナノチューブ製造方法

Jan. 2024
Fabrication of Tin Oxide/Nitrogen-doped Titanium Dioxide Heterojunction Thin Films
5th International Symposium of the Vacuum Society of the Philippines (ISVSP2024), Best Paper Presenter
Melanie Martinez;Magdelano Vasquez Jr.;Tomohiro Yamaguchi;Shinya Aikawa, International society

Oct. 2020

Jul. 2013

Mar. 2007

Dec. 2006

01 Apr. 2022 - 31 Mar. 2025
Development of hydrogenated amorphous indium oxide-based transparent conductive oxide films with high mechanical flexibility
Grant-in-Aid for Scientific Research (C), Kogakuin University

01 Apr. 2014 - 31 Mar. 2016
Control of thin-film transistor characteristics using amorphous oxide semiconductors of simple composition
Grant-in-Aid for Young Scientists (B), Kogakuin University

31 Aug. 2012 - 31 Mar. 2014
Development of extremely flexible and transparent carbon nanotube devices
Grant-in-Aid for Research Activity Start-up