YAYAMA Tomoe
| School of Advanced Engineering Department of Applied Physics | Associate Professor |
Career
Educational Background
IDs
Identifiers
研究者番号：10741514
researchmap会員ID：R000066916
J-Global ID：202401016902191533
Research Field
Paper
- Effect of interfacial chemical bonding on the mechanical properties of carbon nanotube/epoxy nanocomposites
Tomoe Yayama; Fumiya Ando; Fumiko Akagi
Journal of Evolving Space Activities, May 2024, [Reviewed]
Lead, Corresponding - Theoretical study of the interfacial properties of carbon nanotube/epoxy resin nanocomposites
Yurika Serizawa; Tomoe Yayama; Fumiko Akagi
Japanese Journal of Applied Physics, 22 Apr. 2022, [Reviewed] - Point defect generation probability in rare-earth permanent magnets in radiation environments via first-principle calculations
Ryoma Suzuki; Tomoe Yayama; Fumiko Akagi
IEEE Transactions on Magnetics, 11 Jan. 2022, [Reviewed] - First-principles study of two-dimensional gallium-nitrides on van der Waals epitaxial substrate
Tomoe Yayama; Anh Khoa Augustin Lu; Tetsuya Morishita; Takeshi Nakanishi
Applied Physics Letters, 16 Nov. 2021, [Reviewed]
Lead, Corresponding - On Hydrogenated Bilayer GaN: New Stable Structures along the c-Plane, m-Plane, or a-Plane
Anh Khoa Augustin Lu; Tomoe Yayama; Tetsuya Morishita; and Takeshi Nakanishi
Journal of Physical Chemistry C, 10 Jul. 2020, [Reviewed] - Adsorption of toxic gasses on silicene/Ag(111)
Dale A. Osborne; Tetsuya Morishita; Sherif Abdulkader Tawfik; Tomoe Yayama; Michelle J. S. Spencer
Physical Chemistry Chemical Physics, 28 Aug. 2019, [Reviewed] - First-principles study of two-dimensional bilayer GaN: structure, electronic properties and temperature effect
Tomoe Yayama; Anh Khoa Augustin Lu; Tetsuya Morishita and Takeshi Nakanishi
Japanese Journal of Applied Physics, 23 May 2019, [Reviewed]
Lead - Uncovering New Buckled Structures of Bilayer GaN: A First-Principles Study
Anh Khoa Augustin Lu; Tomoe Yayama; Tetsuya Morishita; Michelle J. S. Spencer; and Takeshi Nakanishi
The journal of physical chemistry, 31 Dec. 2018, [Reviewed] - Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface
Kengo Nishio; Tomoe Yayama; Takehide Miyazaki; Noriyuki Taoka; Mitsuaki Shimizu
Scientific Reports, 23 Jan. 2018, [Reviewed] - Polarization modulation of nanotrenches in GaN (0001)/(000-1) by surface hydrogenation
Tomoe Yayama; Yanlin Gao; Susumu Okada; and Toyohiro Chikyow2
Japanese Journal of Applied Physics, 24 Oct. 2017, [Reviewed]
Lead - Polar properties of a hexagonally bonded GaN sheet under biaxial compression
Yanlin Gao; Tomoe Yayama; and Susumu Okada
Applied Physics Express, 22 Aug. 2016, [Reviewed] - Theoretical investigation of hydrogen absorption properties of rhodium-silver alloys
Tomoe Yayama; Takayoshi Ishimoto; Michihisa Koyama
Journal of Alloys and Compounds, 11 Dec. 2015, [Reviewed]
Lead - Effect of alloying elements on hydrogen absorption properties of palladium-based solid solution alloys
Tomoe Yayama; Takayoshi Ishimoto; Michihisa Koyama
Journal of Alloys and Compounds, 09 Sep. 2015, [Reviewed]
Lead - The valence band structure of AgxRh1–x alloy nanoparticles
Anli Yang; Osami Sakata; Kohei Kusada; Tomoe Yayama; Hideki yoshikawa; Takayoshi Ishimoto; Michihisa Koyama; Hirokazu Kobayashi; and Hiroshi Kitagawa
Applied Physics Letters, 16 Oct. 2014, [Reviewed] - Role of the Surface N–H Molecular Layer in High Quality In-RICH InGaN Growth by MOVPE
Tomoe Yayama; Yoshihiro Kangawa; and Koichi Kakimoto
Journal of Chemical Engineering of Japan, 17 Mar. 2014, [Reviewed]
Lead - Theoretical Investigation of the Effect of Growth Orientation on Indium Incorporation Efficiency during InGaN Thin Film Growth by Metal–Organic Vapor Phase Epitaxy
Tomoe Yayama; Yoshihiro Kangawa; and Koichi Kakimoto
Japanese Journal of Applied Physics, 20 May 2013, [Reviewed]
Lead - Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources
Jun Kawano; Yoshihiro Kangawa; Tomoe Yayama; Koichi Kakimoto and Akinori Koukitu
Japanese Journal of Applied Physics, 13 Mar. 2013, [Reviewed] - Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources
Yoshihiro Kangawa; Ryutaro Toki; Tomoe Yayama; Boris M. Epelbaum and Koichi Kakimoto
Applied Physics Express, 19 Aug. 2011, [Reviewed] - Calculation of phase diagrams of the Li3N-Al system for AlN growth
Tomoe Yayama; Yoshihiro Kangawa; and Koichi Kakimoto
Physica Status Solidi C, 17 Mar. 2011, [Reviewed]
Lead - Theoretical analyses of In incorporation and compositional instability in coherently grown InGaN thin films
Tomoe Yayama; Yoshihiro Kangawa; Koichi Kakimoto; and Akinori Koukitu
Physica Status Solidi C, 21 Apr. 2010, [Reviewed]
Lead - Method for Theoretical Prediction of Indium Composition in Coherently Grown InGaN Thin Films
Tomoe Yayama; Yoshihiro Kangawa; Koichi Kakimoto; and Akinori Koukitu
Japanese Journal of Applied Physics, 20 Aug. 2009, [Reviewed]
Lead
Lectures, oral presentations, etc.
- Relationship between the interfacial adhesion and microscopic interface structures in CNT/epoxy resin nanocomposites
Tomoe Yayama; Tenma Hiraishi; Fumiko Akagi
The 25th International Conference on the Science and Applications of Nanotubes and Low-Dimensional Materials (NT'25), 16 Jun. 2025 - 炭素置換によりホールドープしたGaNにおけるキャリアのアクセプタ準位への無輻射緩和過程
14 Mar. 2025 - 窒化ガリウム結晶内部の点欠陥に対する塩素終端構造の電子状態解析
14 Mar. 2025 - CNT/エポキシ樹脂における界面接着性と界面構造の関係
14 Mar. 2025 - 窒化ガリウム結晶内部の点欠陥に対するフッ素終端と水素終端の電子状態の比較
14 Mar. 2025 - 宇宙で活躍する材料とミクロな計算物質科学
20 Feb. 2025, [Invited] - Electronic states analysis of fluorine-terminated structures for a point defect inside gallium nitride crystals
Yuki Fujishiro; Tomoe Yayama; Takahiro Nagata; Toyohiro Chikyow; Fumiko Akagi
The 43rd. Electronic Materials Symposium, 03 Oct. 2024 - 第一原理計算を用いたCe-Zn共置換M型Srフェライトの結晶磁気異方性定数の研究
24 Sep. 2024 - K平均法をCNT/エポキシ樹脂複合材料界面の樹脂構造の分類
16 Sep. 2024 - 窒化ガリウム結晶内部の点欠陥に対するフッ素終端構造とその電子状態に関する研究
25 Mar. 2024 - Fluorine termination on dangling bonds of gallium nitride surfaces and defects
Tomoe Yayama; Nanami Iba; Takahiro Nagata; Toyohiro Chikyow
International Conference on Nitride Semiconductors (ICNS14), 14 Nov. 2023 - Evaluation of magnetic moment and magnetocrystalline anisotropy of magnetic materials using first-principles calculation
R. Namiki; T. Yayama; F. Akagi
The 42nd. Electronic Materials Symposium, 12 Oct. 2023 - Microscopic structural analysis of carbon nanotubes/epoxy composites using molecular dynamics
T. Hiraishi; T. Yayama; F. Akagi
The 42nd. Electronic Materials Symposium, 12 Oct. 2023 - Magnetic moment and magnetocrystalline anisotropy energy of Fe, Ni, and Co using first-principles calculations
F. Akagi; R. Namiki; T. Yayama
27 Sep. 2023 - カーボンナノチューブ/エポキシ樹脂ナノコンポジットの界面電子状態と機械的特性の関係
22 Sep. 2023 - Effect of Interfacial Chemical Bonding on Mechanical Properties of Carbon Nanotubes/epoxy Nanocomposites
Tomoe Yayama; Fumiya Ando; Fumiko Akagi
The 34th International Symposium on Space Technology and Science, 05 Jun. 2023 - Point defect generation probability considering microscopic elastic scattering cross section in rare-earth permanent magnets via first-principles calculations
F. Akagi; R. Suzuki; T. Yayama
Intermag 2023, 15 May 2023 - 2次元窒化物半導体の可能性とvdWエピタキシー
24 Nov. 2022, [Invited] - 点欠陥のあるカーボンナノチューブとエポキシ樹脂ナノコンポジットの引張強度の研究
04 Nov. 2022 - Point defect generation probability in rare-earth permanent magnets in radiation environments via first-principle calculations
R. Suzuki; T. Yayama; F. Akagi
MMM-Intermag joint 2022, 11 Jan. 2022 - Theoretical study on interfacial interaction of zig-zag carbon nanotubes/epoxy resin nanocomposite
Yurika Serizawa; Tomoe Yayama; Fumiko Akagi
International Symposium on Advanced Technology, 23 Nov. 2021 - 第一原理計算による宇宙環境下での利用を想定した希土類永久磁石の電子・スピン状態の評価
13 Sep. 2021 - ジグザグ型単層カーボンナノチューブ/エポキシ樹脂複合材料の界面特性に関する理論的研究
11 Sep. 2021 - Evaluation on formation energies of point defect in group III nitride semiconductors for space-use solar cells
R. Suzuki; T. Yayama; and T. Honda
The 39th. Electronic Materials Symposium, 08 Oct. 2020 - Structural and electronic properties of 2-dimensional GaN on van der Waals substrates
T. Yayama; A. K. Lu; T. Nakanishi; and T. Morishita
08 Oct. 2020 - van der Waals基板上の二次元III族窒化物の安定構造と電子状態
21 Sep. 2019 - First-principles molecular dynamics study of two-dimensional bilayer GaN
Tomoe Yayama; Anh Khoa Augustin Lu; Tetsuya Morishita; and Takeshi Nakanishi
International Workshop on Nitrides Semiconductors, 16 Nov. 2018
Award
Research Themes
- Apr. 2025 - Mar. 2028
Non-radiative relaxation of careers into defect states in group-III nitrides
Grant-in-Aid for Scientific Research (C), Kogakuin University - Apr. 2025 - Mar. 2026
Career dynamics of non-radiative relaxation into defect states in p-type group-III nitrides
Kogakuin University - Apr. 2023 - Mar. 2025
窒化物半導体におけるキャリアーのドーパント準位への無輻射緩和過程の解明 - Apr. 2020 - Mar. 2021
微視的界面構造に基づくナノコンポジットの機械的特性の発現メカニズム
Member History
