Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering, Electron/Electric Material Engineering

Nanotechnology/Materials, Crystal engineering, Crystal engineering

01 Aug. 2017 - Present

01 Apr. 2012 - Present

01 Apr. 2011 - Present

Indium Nitride and Related alloys (eds. T. D. Veal,C. F. McConville and W. J. Schaff) Chap. 1
Y. Nanishi; T. Araki and T. Yamaguchi, Joint work
CRC Press Taylor & Francis Group, Aug. 2009

Indium Nitride and Related alloys (eds. T. D. Veal,C. F. McConville and W. J. Schaff) Chap. 1
2009

Vacuum Science and Technology: Nitrides as seen by the technology 2002 (Eds.: T. Paskova and B. Monema) Chap. 17
2003

Vacuum Science and Technology: Nitrides as seen by the technology 2002 (Eds.: T. Paskova and B. Monema) Chap. 17
Y. Nanishi; Y. Saito and T. Yamaguchi, Joint work
Research Sigpost, Jan. 2003

Realization of cathodoluminescence in the 180 nm spectral range by suppressing thermal stress in mist chemical vapor deposition of rocksalt-structured MgZnO films
K. Ogawa; W. Kosaka; H. Kusaka; K. Kudo; S. Ohno; I. Serizawa; Y. Ota; T. Yamaguchi; T. Honda; K. Kaneko; S. Fujita; T. Onuma
Japanese Journal of Applied Physics, 04 Jan. 2024, [Reviewed]

InGaN/GaN superlattice underlayer for fabricating of red nanocolumn μ-LEDs with (10-11) plane InGaN/AlGaN MQWs
J. Yamada; A. Mizuno; T. Honda; K. Yoshida; R. Togashi; I. Nomura; T. Yamaguchi; T. Honda and K. Kishino
Nanotechnology, 14 Aug. 2023, [Reviewed]

Steady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1−xO
T. Onuma; K. Kudo; M. Ono; W. Kosaka; K. Shima; K. Ishii; K. Kaneko; Y. Ota; T. Yamaguchi; K. Kojima; S. Fujita; S. F. Chichibu; T. Honda
Journal of Applied Physics, 13 Jul. 2023, [Reviewed]

Growth of α-In2O3 films with different concentrations of In2O3 powder used as source precursor by mist chemical vapor deposition
A. Taguchi; T. Yamamoto; K. Kaneko; K. Goto; T. Onuma; T. Honda; Y. Kumagai; S. Fujita; T. Yamaguchi
Japanese Journal of Applied Physics, 19 Apr. 2023, [Reviewed]
Last, Corresponding

Optical properties of corundum-structured In2O3
R. Cuscó; T. Yamaguchi; E. Kluth; R. Goldhahn; M. Feneberg
Applied Physics Letters, 10 Aug. 2022, [Reviewed]

Plasma-excited MBE—proposal and achievements through R&D of compound semiconductor materials and devices
Y. Nanishi and T. Yamaguchi
Japanese Journal of Applied Physics, 26 Jan. 2022, [Reviewed]

Vacuum Ultraviolet Emission Properties of Rocksalt-Structured MgZnO Microcrystals Prepared on Quartz Glass Substrates
W. Kosaka; S. Hoshi; K. Kudo; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; T. Onuma
physica status solidi (b), 02 Dec. 2021, [Reviewed]

n型SnOx薄膜の窒化による電荷移動と伝導型変換
15 Nov. 2021, [Reviewed]

Mist Chemical Vapor Deposition Growth of alpha-In2O3 Films Using Indium Oxide Powder as Source Precursor
A. Taguchi; S. Takahashi; A. Sekiguchi; K. Kaneko; S. Fujita; T. Onuma; T. Honda; T. Yamaguchi
physica status solidi (b), 20 Oct. 2021, [Reviewed]
Last

Identification of free and bound exciton emission of MgO single crystal in vacuum ultraviolet spectral range
T. Onuma; W. Kosaka; K. Kudo; Y. Ota; T. Yamaguchi; K. Kaneko; S. Fujita; and T. Honda
Applied Physics Letters, 30 Sep. 2021, [Reviewed]

Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in beta-Ga2O3 substrate and homoepitaxial film
T. Onuma; K. Sasaki; T. Yamaguchi; T. Honda; A. Kuramata; S. Yamakoshi; and M. Higashiwaki
Applied Physics Letters, 21 Jun. 2021, [Reviewed]

Effect of thermal annealing on photoexcited carriers in nitrogen-ion-implanted β-Ga2O3 crystals detected by photocurrent measurement
M. Nakanishi; M. H. Wong; T. Yamaguchi; T. Honda; M. Higashiwaki; and T. Onuma
AIP Advances, 25 Mar. 2021, [Reviewed]

Impact of hydrochloric acid on the epitaxial growth of In2O3 films on (0001)α-Al2O3 substrates by mist CVD
T. Yamaguchi; S. Takahashi; T. Kiguchi; A. Sekiguchi; K. Kaneko; S. Fujita; H. Nagai; M. Sato; T. Onuma and T. Honda
Applied Physics Express, 18 Jun. 2020, [Reviewed]
Lead

Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates
T. Yamaguchi; H. Nagai; T. Kiguchi; N. Wakabayashi; T. Igawa; T. Hitora; T. Onuma; T. Honda and M. Sato
Applied Physics Express, 18 Jun. 2020, [Reviewed]
Lead

Photoelectron spectroscopic study on electronic state of corundum In2O3 epitaxial thin film grown by mist-CVD
T. Nagata; T. Yamaguchi; S. Ueda; W. Yi; J. Chen; T. Kobayashi; H. Yokoo; T. Honda; Y. Yamashita and T. Chikyow
Japanese Journal of Applied Physics, 04 May 2020, [Reviewed]

In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN
T. Yamaguchi; T. Sasaki; S. Fujikawa; M. Takahasi; T. Araki; T. Onuma; T. Honda and Y. Nanishi
Crystals, 28 Nov. 2019, [Reviewed]
Lead

Excitation-current-density and temperature dependences of deep UV cathodoluminescence in rocksalt-structured MgxZn1-xO films
M. Ono; K. Ishii; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita and T. Onuma
Journal of Applied Physics, 13 Jun. 2019, [Reviewed]

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
H. Matsuura; T. Onuma; M. Sumiya; T. Yamaguchi; B. Ren; M. Liao; T. Honda and L. Sang
Applied Sciences, 27 Apr. 2019, [Reviewed], [Invited]

Ordinary dielectric function of corundumlike α−Ga2O3 from 40 meV to 20 eV
M. Feneberg; J. Nixdorf; M. D. Neumann; N. Esser; L. Artús; R. Cuscó; T. Yamaguchi; and Rüdiger Goldhahn
Physical Review Materials, 09 Apr. 2019, [Reviewed], [Invited]

Structural evaluation of ions-implanted GaN films by photothermal deflection spectroscopy
M. Sumiya; K. Fukuda; H. Iwai; T. Yamaguchi; T. Onuma; and T. Honda
Applied Sciences, 28 Nov. 2018, [Reviewed], [Invited]

Modeling and interpretation of UV and blue luminescence intensity in beta-Ga2O3 by silicon and nitrogen doping
T.Onuma; Y.Nakata; K.Sasaki; T.Masui; T.Yamaguchi; T.Honda; A.Kuramata; S.Yamakoshi; M.Higashiwaki
Journal of Applied Physics, 20 Aug. 2018, [Reviewed], [Invited]

Impact of local arrangement of Mg and Zn atoms in rocksalt-structured MgxZn1-xO alloys on bandgap and deep UV cathodoluminescence peak energies
T. Onuma; M. Ono; K. Ishii; K. Kaneko; T. Yamaguchi; S. Fujita; and T. Honda
Applied Physics Letters, 10 Aug. 2018, [Reviewed], [Invited]

Relation between electrical and optical properties of p-type NiO films
M.Ono; K.Sasaki; H.Nagai; T.Yamaguchi; M.Higashiwaki; A.Kuramata; S.Yamakoshi; M.Sato; T.Honda; and T.Onuma
Physica Status Solidi (b), 14 Apr. 2018, [Reviewed], [Invited]

Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates
Masatomo Sumiya; Naoki Toyomitsu; Yoshitaka Nakano; Jianyu Wang; Yoshitomo Harada; Liwen Sang; Takashi Sekiguchi; Tomohiro Yamaguchi; and Tohru Honda
APL Materials, 27 Jan. 2017, [Reviewed]

Fabrication of Ag dispersed ZnO films by molecular precursor method and application in GaInN blue LED
D.Taka; T.Onuma; T.Shibukawa; H.Nagai; T.Yamaguchi; J.-S. Jang; M.Sato; and T.Honda
Physica Status Solidi (a), Nov. 2016, [Reviewed]

Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in beta-Ga2O3 single crystals
T. Onuma; S. Saito; K. Sasaki; K. Goto; T. Masui; T. Yamaguchi; T. Honda; A. Kuramata and M. Higashiwaki
Applied Physics Letters, Mar. 2016, [Reviewed]

InN nanocolumns grown by molecular beam epitaxy and their luminescence properties
K. Wang; T. Araki; T. Yamaguchi; Y. T. Chen; E. Yoon and Y. Nanishi
Journal of Crystal Growth, Nov. 2015, [Reviewed]

Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga2O3 single crystal
R. Cuscó; N. Domènech-Amador; T. Hatakeyama; T. Yamaguchi; T. Honda and L. Artús
Journal of Applied Physics, May 2015, [Reviewed]

Impacts of AlOx formation on emission properties of AlN/GaN heterostructures
T. Onuma; Y. Sugiura; T. Yamaguchi; T. Honda and M. Higashiwaki
Applied Physics Express, Apr. 2015, [Reviewed]

Pressure dependence of the refractive index in wurtzite and rocksalt indium nitride
R. Oliva; A. Segura; J. Ibanez; T. Yamaguchi; Y. Nanishi and L. Artus
Applied Physics Letters, Nov. 2014, [Reviewed]

Recent development of InN RF-MBE growth and its structural and property characterization
Y. Nanishi; Y. Saito; T. Yamaguchi; T. Araki; T. Miyajima and H. Naoi
physica status solidi (c), Feb. 2004, [Reviewed]

Influence of substrate polarity on growth of InN films by RF-MBE
F. Matsuda; Y. Saito; T. Muramatsu; T. Yamaguchi; Y. Matsuo; A. Koukitu; T. Araki and Y. Nanishi
physica status solidi (c), Dec. 2003, [Reviewed]

Al₂O₃/n‐,p‐GaN構造の光熱偏向分光法による評価
福田清貴; 福田清貴; 浅井祐哉; 関慶祐; SANG Liwen; 吉越章隆; 上殿明良; 石垣隆正; 尾沼猛儀; 山口智広; 本田徹; 角谷正友
応用物理学会秋季学術講演会講演予稿集(CD-ROM), 05 Sep. 2018
http://jglobal.jst.go.jp/public/201802211152446067

光熱偏向分光法によるMgイオン注入GaN層の評価
福田清貴; 福田清貴; 高島信也; 尾沼猛儀; 山口智広; 本田徹; 上殿明良; 角谷正友
応用物理学会秋季学術講演会講演予稿集(CD-ROM), 05 Sep. 2018
http://jglobal.jst.go.jp/public/201802227288483567

Development of Deep UV Photosensor using III-VI Oxide Semiconductor
尾沼猛儀; 山口智広; 本田徹; CHO Jaehee
工学院大学総合研究所年報, Jul. 2018
http://jglobal.jst.go.jp/public/201802220874754670

Fabrication of photovoltaic lithium-ion-battery of all solidified materials and enhanced capacity
永井裕己; 山口智広; 工藤幸寛; 望月千尋; LI Lu; 佐藤光史
工学院大学総合研究所年報, Jul. 2018
http://jglobal.jst.go.jp/public/201802221651197489

Fabrication of Near UV Transparent Conductive Film for GaN-based Integrated Surface Emitting Devices
本田徹; JANG Ja‐Soon; 佐藤光史; 永井裕己; 尾沼猛儀; 山口智広
工学院大学総合研究所年報, Jul. 2018
http://jglobal.jst.go.jp/public/201802268441194713

Relation Between Electrical and Optical Properties of p-Type NiO Films
Mizuki Ono; Kohei Sasaki; Hiroki Nagai; Tomohiro Yamaguchi; Masataka Higashiwaki; Akito Kuramata; Shigenobu Yamakoshi; Mitsunobu Sato; Tohru Honda; Takeyoshi Onuma
Physica Status Solidi (B) Basic Research, Apr. 2018

Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy
Masataka Imura; Shunsuke Tsuda; Hiroyuki Takeda; Takahiro Nagata; Ryan G. Banal; Hideki Yoshikawa; Anli Yang; Yoshiyuki Yamashita; Keisuke Kobayashi; Yasuo Koide; Tomohiro Yamaguchi; Masamitsu Kaneko; Nao Uematsu; Ke Wang; Tsutomu Araki; Yasushi Nanishi
Journal of Applied Physics, 07 Mar. 2018

Mgドーピングによる高In組成InGaNの表面‐バルク電子状態変化
井村将隆; 津田俊輔; 長田貴弘; 山下良之; 吉川英樹; 小林啓介; 小出康夫; 山口智広; 山口智広; 金子昌充; 上松尚; 荒木努; 名西やすし
応用物理学会春季学術講演会講演予稿集(CD-ROM), 05 Mar. 2018
http://jglobal.jst.go.jp/public/201802278995427949

岩塩構造Mg_xZn_1-xOにおける深紫外線カソードルミネセンスの温度および励起密度依存性
小野瑞生; 石井恭平; 金子健太郎; 山口智広; 本田徹; 藤田静雄; 尾沼猛儀
応用物理学会春季学術講演会講演予稿集(CD-ROM), 05 Mar. 2018
http://jglobal.jst.go.jp/public/201802280895988476

放射光X線回折測定を用いたGaInN/InN成長のその場観察~InN解離温度領域での振る舞い~
山口智広; 佐々木拓生; 高橋正光; 尾沼猛儀; 本田徹; 荒木努; 名西やす之
応用物理学会春季学術講演会講演予稿集(CD-ROM), 05 Mar. 2018
http://jglobal.jst.go.jp/public/201802286069868341

III‐V族窒化物の価電子帯構造およびギャップ内準位の評価
角谷正友; 福田清貴; 福田清貴; 上田茂典; 浅井祐哉; 浅井祐哉; CHO Yujin; 関口隆史; 上殿明良; 尾沼猛儀; SANG Liwen; 山口智広; 本田徹
応用物理学会春季学術講演会講演予稿集(CD-ROM), 05 Mar. 2018
http://jglobal.jst.go.jp/public/201802288789146088

10×10Siマイクロカップ基板でのμ‐LED集積化
名和遼祐; 相澤空; 尾沼猛儀; 山口智広; 本田徹
応用物理学会春季学術講演会講演予稿集(CD-ROM), 05 Mar. 2018
http://jglobal.jst.go.jp/public/201802290457668077

GaN上およびInN上GaInN成長における成長初期過程の観察
山口智広; 佐々木拓生; 高橋正光; 尾沼猛儀; 本田徹; 荒木努; 名西やす之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), 25 Aug. 2017
http://jglobal.jst.go.jp/public/201702242839698795

Fabrication of Ag dispersed ZnO films by molecular precursor method and application in GaInN blue LED
Daichi Taka; Takeyoshi Onuma; Takashi Shibukawa; Hiroki Nagai; Tomohiro Yamaguchi; Ja Soon Jang; Mitsunobu Sato; Tohru Honda
Physica Status Solidi (A) Applications and Materials Science, 01 Mar. 2017

Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy
Masataka Imura; Shunsuke Tsuda; Takahiro Nagata; Ryan G. Banal; Hideki Yoshikawa; Anli Yang; Yoshiyuki Yamashita; Keisuke Kobayashi; Yasuo Koide; Tomohiro Yamaguchi; Masamitsu Kaneko; Nao Uematsu; Ke Wang; Tsutomu Araki; Yasushi Nanishi
JOURNAL OF APPLIED PHYSICS, Mar. 2017

Deep-ultraviolet luminescence of rocksalt-structured MgxZn1-xO (x > 0.5) grown on MgO substrates
K.Kaneko; T.Onuma; K.Tsumura; T.Uchida; R.Jinno; T.Yamaguchi; T.Honda; and S.Fujita
Applied Physics Express, Oct. 2016, [Reviewed]

Spectroscopic ellipsometry studies on β-Ga2O3 films and single crystal
T.Onuma; S.Saito; K.Sasaki; T.Masui; T.Yamaguchi; T.Honda; A.Kuramata; and M.Higashiwaki
Japanese Journal of Applied Physics, Sep. 2016, [Reviewed]

Surface plasmon resonant emission from Ag dispersed ZnO films fabricated by molecular precursor method
Daichi Taka; Takeyoshi Onuma; Takashi Shibukawa; Hiroki Nagai; Tomohiro Yamaguchi; Ja Soon Jang; Mitsunobu Sato; Tohru Honda
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, 01 Aug. 2016

Nitride-MBE system for in situ synchrotron X-ray,measurements
T. Sasaki; F. Ishikawa; T. Yamaguchi; and M. Takahasi
Japanese Journal of Applied Physics, Apr. 2016, [Reviewed]

Valence band ordering in beta-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
T. Onuma; S. Saito; K. Sasaki; T. Masui; T. Yamaguchi; T. Honda and M. Higashiwaki
Japanese Journal of Applied Physics, Oct. 2015, [Reviewed]

RF‐MBE法によるGaN上GaInN成長におけるその場X線逆格子マッピング測定
澤田匡崇; 山口智広; 佐々木拓生; 鳴谷建人; 出来亮太; 尾沼猛儀; 本田徹; 高橋正光; 高橋正光; 名西やす之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), 31 Aug. 2015
http://jglobal.jst.go.jp/public/201502214323473315

OPIC LEDIA’15会議報告
Aug. 2015

Growth of High-quality In-based Nitride Semiconductors and Development of Device Fabrication Processes-Investigations on possibility of group-III oxide buffer layers and characteristics of ICP etching-
山口智広; 本田徹; 東脇正高; 荒木努
工学院大学総合研究所年報, Jul. 2015
http://jglobal.jst.go.jp/public/201502209203087230

Optical properties of Ga0.82In0.18N p-n homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy
ONUMA Takeyoshi; NARUTANI Kento; FUJIOKA Shuhei; YAMAGUCHI Tomohiro; WANG Ke; ARAKI Tsutomu; NANISHI Yasushi; SANG Liwen; SUMIYA Masatomo; HONDA Tohru
Trans Mater Res Soc Jpn, Jun. 2015

Growth of High-quality In-based Nitride Semiconductors and Development of Device Fabrication Processes-Structural Evaluation of GaInN Films and Development to Devise Fabrication-
山口智広; 本田徹; 東脇正高; 荒木努
工学院大学総合研究所年報, Jul. 2014
http://jglobal.jst.go.jp/public/201402290619788877

Cathodoluminescence spectra of Ga-In-O polycrystalline films fabricated by molecular precursor method
Takeyoshi Onuma; Taihei Yasuno; Soichiro Takano; Ryousuke Goto; Shuhei Fujioka; Takumi Hatakeyama; Takuto Oda; Hiroki Hara; Chihiro Mochizuki; Hiroki Nagai; Tomohiro Yamaguchi; Mitsunobu Sato; Tohru Honda
Japanese Journal of Applied Physics, May 2014

Cathodoluminescence spectra of Ga-In-O polycrystalline films fabricated by molecular precursor method
Takeyoshi Onuma; Taihei Yasuno; Soichiro Takano; Ryousuke Goto; Shuhei Fujioka; Takumi Hatakeyama; Takuto Oda; Hiroki Hara; Chihiro Mochizuki; Hiroki Nagai; Tomohiro Yamaguchi; Mitsunobu Sato; Tohru Honda
Japanese Journal of Applied Physics, May 2014

GaInNのRF‐MBE成長とpnホモ接合型青緑色LEDの製作
鳴谷建人; 山口智広; WANG Ke; 荒木努; 名西やす之; SANG Liwen; 角谷正友; 藤岡秀平; 尾沼猛儀; 本田徹
応用物理学会春季学術講演会講演予稿集(CD-ROM), 03 Mar. 2014
http://jglobal.jst.go.jp/public/201402295073859672

Effect of (GaN/AlN) alternating-source-feeding buffer layer in GaN growth on Al2O3 and silicon by RF-MBE
Tomohiro Yamaguchi; Daiki Tajimi; Masato Hayashi; Tatsuhiro Igaki; Yohei Sugiura; Tohru Honda
Physica Status Solidi (C) Current Topics in Solid State Physics, Nov. 2013

Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy
M. Imura; S. Tsuda; T. Nagata; H. Takeda; M. Y. Liao; A. L. Yang; Y. Yamashita; H. Yoshikawa; Y. Koide; K. Kobayashi; T. Yamaguchi; M. Kaneko; N. Uematsu; K. Wang; T. Araki; Y. Nanishi
APPLIED PHYSICS LETTERS, Oct. 2013

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy
J. Ibanez; R. Oliva; F. J. Manjon; A. Segura; T. Yamaguchi; Y. Nanishi; R. Cusco; L. Artus
PHYSICAL REVIEW B, Sep. 2013

硬X線光電子分光法を用いたMg‐InNのエネルギーバンド分布評価
井村将隆; 津田俊輔; 長田貴弘; 武田寛之; 小出康夫; YANG A.L; 山下良之; 吉川英樹; 小林啓介; 山口智広; 金子昌充; 上松尚; 荒木努; 名西やすし
応用物理学会秋季学術講演会講演予稿集(CD-ROM), 31 Aug. 2013
http://jglobal.jst.go.jp/public/201302265832281571

Fabrication of Red, Green, and Blue Pixels Using Integrated GaN-Based Schottky-Type Light-Emitting Diodes
Tohru Honda; Tomohiro Yamaguchi; Naoyuki Sakai; Shuhei Fujioka; Yohei Sugiura
JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2013

Injection-Activated Defect-Governed Recombination Rate in InN
Saulius Nargelas; Kestutis Jarasiunas; Mikas Vengris; Egidijus Sakalauskas; Tomohiro Yamaguchi; Yasushi Nanishi
JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2013

Investigation of the Effect of Oxygen on the Near-Surface Electron Accumulation in Nonpolar m-Plane (10(1)over-bar0) InN Film by Hard X-ray Photoelectron Spectroscopy
Anli Yang; Yoshiyuki Yamashita; Hideki Yoshikawa; Tomohiro Yamaguchi; Masataka Imura; Masamitsu Kaneko; Shigenori Ueda; Osami Sakata; Yasushi Nanishi; Keisuke Kobayashi
JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2013

Correlation between blue luminescence intensity and resistivity in beta-Ga2O3 single crystals
T. Onuma; S. Fujioka; T. Yamaguchi; M. Higashiwaki; K. Sasaki; T. Masui; T. Honda
APPLIED PHYSICS LETTERS, Jul. 2013

Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy
Masataka Imura; Shunsuke Tsuda; Takahiro Nagata; Hiroyuki Takeda; Meiyong Liao; AnLi Yang; Yoshiyuki Yamashita; Hideki Yoshikawa; Yasuo Koide; Keisuke Kobayashi; Tomohiro Yamaguchi; Masamitsu Kaneko; Nao Uematsu; Tsutomu Araki; Yasushi Nanishi
JOURNAL OF APPLIED PHYSICS, Jul. 2013

Growth of High-quality In-based Nitride Semiconductors and Development of Device Fabrication Process-Development of High-quality Thick In-based Material Growth-
山口智広; 本田徹; 東脇正高; 荒木努
工学院大学総合研究所年報, Jul. 2013
http://jglobal.jst.go.jp/public/201302244986105892

Temperature Dependence of Surface Acoustic Wave Propagation Velocity in InxGa1-xN Films Obtained by High-Resolution Brillouin Spectroscopy: Determination of Temperature Coefficient of Frequency
Rafael J. Jimenez Rioboo; Carlos Prieto; Ramon Cusco; Lluis Artus; Chris Boney; Abdelhak Bensaoula; Tomohiro Yamaguchi; Yasushi Nanishi
APPLIED PHYSICS EXPRESS, May 2013

硬X線光電子分光法を用いたMgドープIn_0.70Ga_0.30Nの表面‐バルク電子状態評価
井村将隆; 津田俊輔; 長田貴弘; 武田寛之; 小出康夫; YANG A.L; 山下良之; 吉川英樹; 小林啓介; 山口智広; 金子昌充; 上松尚; 荒木努; 名西やすし
応用物理学会春季学術講演会講演予稿集(CD-ROM), 11 Mar. 2013
http://jglobal.jst.go.jp/public/201302212119592072

GaN growth on (111)Al substrates by CS-MBE and their chemical lift-off technique
Tohru Honda; Masato Hayashi; Yohei Sugiura; Itsuki Takezawa; Tomohiro Yamaguchi
Physica Status Solidi (C) Current Topics in Solid State Physics, Mar. 2013

Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction
A. L. Yang; Y. Yamashita; M. Kobata; T. Matsushita; H. Yoshikawa; I. Píš; M. Imura; T. Yamaguchi; O. Sakata; Y. Nanishi; K. Kobayashi
Applied Physics Letters, 21 Jan. 2013

Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation
T. Yamaguchi; N. Uematsu; T. Araki; T. Honda; E. Yoon; Y. Nanishi
Journal of Crystal Growth, 2013

Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth
T. Yamaguchi; K. Wang; T. Araki; T. Honda; E. Yoon; Y. Nanishi
Proceedings of SPIE - The International Society for Optical Engineering, 2013

MBE Growth of Thick InN and InGaN Films using DERI Method
ARAKI Tsutomu; YAMAGUCHI Tomohiro; YOON Euijoon; NANISHI Yasushi
Abstr JSAP MRS Jt Symp (CD-ROM), 2013
http://jglobal.jst.go.jp/public/201302200340327245

Active involvement of micro-lipid droplets and lipid-droplet-associated proteins in hormone-stimulated lipolysis in adipocytes
Takeshi Hashimoto; Hiroki Segawa; Masanari Okuno; Hideaki Kano; Hiro-o Hamaguchi; Tokuko Haraguchi; Yasushi Hiraoka; Shiho Hasui; Tomohiro Yamaguchi; Fumiko Hirose; Takashi Osumi
JOURNAL OF CELL SCIENCE, Dec. 2012

DERI法を用いたInGaN系量子ナノ構造のRF-MBE成長
Nov. 2012

GaNの表面処理による表面フェルミ準位変化の推定
Nov. 2012

Comparative study of surface recombination in hexagonal GaN and ZnO surfaces
T. Onuma; N. Sakai; T. Igaki; T. Yamaguchi; A. A. Yamaguchi; T. Honda
JOURNAL OF APPLIED PHYSICS, Sep. 2012

Temperature dependence of Mg-H local vibrational modes in heavily doped InN:Mg
Ramon Cusco; Nuria Domenech-Amador; Luis Artus; Ke Wang; Tomohiro Yamaguchi; Yasushi Nanishi
JOURNAL OF APPLIED PHYSICS, Sep. 2012

Surface acoustic waves and elastic constants of InN epilayers determined by Brillouin scattering
R. J. Jimenez-Rioboo; R. Cusco; N. Domenech-Amador; C. Prieto; T. Yamaguchi; Y. Nanishi; L. Artus
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Jun. 2012

Double resonance Raman effects in InN nanowires
N. Domenech-Amador; R. Cusco; R. Calarco; T. Yamaguchi; Y. Nanishi; L. Artus
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Apr. 2012

Fabrication of a-plane InN nanostructures on patterned a-plane GaN template by ECR-MBE
Tsutomu Araki; Shuhei Yamashita; Tomohiro Yamaguchi; Euijoon Yoon; Yasushi Nanishi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Mar. 2012

Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN
V. Darakchieva; K. Lorenz; M. -Y. Xie; E. Alves; W. J. Schaff; T. Yamaguchi; Y. Nanishi; S. Ruffenach; M. Moret; O. Briot
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Jan. 2012

MBE法による配列制御InNナノコラム成長
Nov. 2011, [Reviewed]

Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations
V. Darakchieva; K. Lorenz; M. -Y. Xie; E. Alves; C. L. Hsiao; L. C. Chen; L. W. Tu; W. J. Schaff; T. Yamaguchi; Y. Nanishi
JOURNAL OF APPLIED PHYSICS, Sep. 2011

High-pressure Raman scattering in wurtzite indium nitride
J. Ibanez; F. J. Manjon; A. Segura; R. Oliva; R. Cusco; R. Vilaplana; T. Yamaguchi; Y. Nanishi; L. Artus
APPLIED PHYSICS LETTERS, Jul. 2011

Raman scattering study of anharmonic phonon decay in InN
Nuria Domenech-Amador; Ramon Cusco; Luis Artus; Tomohiro Yamaguchi; Yasushi Nanishi
PHYSICAL REVIEW B, Jun. 2011

Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure
Tomohiro Yamaguchi; Hidetomo Umeda; Tsutomu Araki; Yasushi Nanishi
JAPANESE JOURNAL OF APPLIED PHYSICS, Apr. 2011

Investigation of InN mole fraction fluctuation in InGaN films grown by RF-MBE
Takuya Kimura; Eita Fukumoto; Tomohiro Yamaguchi; Ke Wang; Masamitsu Kaneko; Tsutomu Araki; Euijoon Yoon; Yasushi Nanishi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, 2011

In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN
Ke Wang; Tomohiro Yamaguchi; Tsutomu Araki; Euijoon Yoon; Yasushi Nanishi
JAPANESE JOURNAL OF APPLIED PHYSICS, Jan. 2011

Growth and fabrication of InN-based III-nitride device structure using droplet elimination process by radical beam irradiation
Tomohiro Yamaguchi; Tsutomu Araki; Yasushi Nanishi
GALLIUM NITRIDE MATERIALS AND DEVICES VI, 2011

Mg doped InN and confirmation of free holes in InN
K. Wang; N. Miller; R. Iwamoto; T. Yamaguchi; M. A. Mayer; T. Araki; Y. Nanishi; K. M. Yu; E. E. Haller; W. Walukiewicz; J. W. Ager
APPLIED PHYSICS LETTERS, Jan. 2011

RF-MBE法を用いたr面サファイア基板上A面InN結晶高品質化に関する検討
Nov. 2010

Structural anisotropy of nonpolar and semipolar InN epitaxial layers
V. Darakchieva; M. -Y. Xie; N. Franco; F. Giuliani; B. Nunes; E. Alves; C. L. Hsiao; L. C. Chen; T. Yamaguchi; Y. Takagi; K. Kawashima; Y. Nanishi
JOURNAL OF APPLIED PHYSICS, Oct. 2010

Optical polarization anisotropy of nonpolar InN epilayers
K. Wang; T. Yamaguchi; A. Takeda; T. Kimura; K. Kawashima; T. Araki; Y. Nanishi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Jun. 2010

RF-MBE growth of InN/InGaN MQW Structures by DERI and their characterization
T. Araki; H. Umeda; T. Yamaguchi; T. Sakamoto; E. Yoon and Y. Nanishi
Proceedings of 22nd International Conference on Indium Phosphide and Related Materials, Jun. 2010

Electronic structure of wurtzite and rocksalt InN investigated by optical absorption under hydrostatic pressure
J. Ibanez; A. Segura; F. J. Manjon; L. Artus; T. Yamaguchi; Y. Nanishi
APPLIED PHYSICS LETTERS, May 2010

Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
V. Darakchieva; K. Lorenz; N. P. Barradas; E. Alves; B. Monemar; M. Schubert; N. Franco; C. L. Hsiao; L. C. Chen; W. J. Schaff; L. W. Tu; T. Yamaguchi; Y. Nanishi
APPLIED PHYSICS LETTERS, Feb. 2010

New MBE growth method for high quality InN and related alloys using in situ monitoring technology
Tomohiro Yamaguchi; Yasushi Nanishi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Jan. 2010

RF-MBE growth of InN/InGaN MQW Structures by DERI and their characterization
T. Araki; H. Umeda; T. Yamaguchi; T. Sakamoto; E. Yoon; Y. Nanishi
Proceedings of 22nd International Conference on Indium Phosphide and Related Materials, 2010

RF-MBE法による R面 (10-12) Sapphire基板上、半極性面 InN の結晶成長
Nov. 2009, [Reviewed]

RF-MBE法を用いた高品質InN結晶成長-配列制御InNナノコラム成長について-
Nov. 2009

RF-MBE法における新規高品質InN結晶成長手法の提案とInGaN結晶成長への応用
Nov. 2009

Raman scattering study of background electron density in InN: a hydrodynamical approach to the LO-phonon-plasmon coupled modes
R. Cusco; E. Alarcon-Llado; J. Ibanez; T. Yamaguchi; Y. Nanishi; L. Artus
JOURNAL OF PHYSICS-CONDENSED MATTER, Oct. 2009

Photoexcited carriers and surface recombination velocity in InN epilayers: A Raman scattering study
Ramon Cusco; Jordi Ibanez; Esther Alarcon-Llado; Luis Artus; Tomohiro Yamaguchi; Yasushi Nanishi
PHYSICAL REVIEW B, Oct. 2009

Raman scattering study of background electron density in InN: a hydrodynamical approach to the LO-phonon-plasmon coupled modes
R. Cusco; E. Alarcon-Llado; J. Ibanez; T. Yamaguchi; Y. Nanishi; L. Artus
JOURNAL OF PHYSICS-CONDENSED MATTER, Oct. 2009

TEM characterization of M-plane InN grown on (100) LiAlO2 substrate by RF-MBE
H. Nozawa; Y. Takagi; S. Harui; D. Muto; T. Yamaguchi; T. Araki and Y. Nanishi
physica status solidi (c), Jun. 2009, [Reviewed]

Growth and characterization of N-polar and In-polar InN films by RF-MBE
T. Yamaguchi; D. Muto; T. Araki; Y. Nanishi
JOURNAL OF CRYSTAL GROWTH, May 2009

Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy
Tomohiro Yamaguchi; Yasushi Nanishi
APPLIED PHYSICS EXPRESS, May 2009

Raman scattering study of the long-wavelength longitudinal-optical-phonon-plasmon coupled modes in high-mobility InN layers
Ramon Cusco; Jordi Ibanez; Esther Alarcon-Llado; Luis Artus; Tomohiro Yamaguchi; Yasushi Nanishi
PHYSICAL REVIEW B, Apr. 2009

TEM characterization of M-plane InN grown on (100) LiAlO2 substrate by RF-MBE
H. Nozawa; Y. Takagi; S. Harui; D. Muto; T. Yamaguchi; T. Araki; Y. Nanishi
physica status solidi (c), 2009

Low-temperature growth of InGaN/GaN nano-islands investigated by grazing-incidence X-ray diffraction
Th Schmidt; J. I. Flege; M. Siebert; S. Figge; T. Yamaguchi; D. Hommel; J. Falta
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009

Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE
T. Araki; D. Fukuoka; H. Tamiya; S. Harui; T. Yamaguchi; H. Miyake; K. Hiramatsu; Y. Nanishi
GALLIUM NITRIDE MATERIALS AND DEVICES IV, 2009

Influence of piezoelectric fields on excitonic complexes in InGaN quantum dots
K. Sebald; J. Kalden; S. Herlufsen; H. Lohmeyer; C. Tessarek; T. Yamaguchi; S. Figge; D. Hommel; J. Gutowski
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4, 2009

Novel InN growth method under In-rich condition on GaN/Al2O3 (0001) templates
Tomohiro Yamaguchi; Daisuke Muto; Tsutomu Araki; Narihiko Maeda; Yasushi Nanishi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009

Improved capping layer growth towards increased stability of InGaN quantum dots
Christian Tessarek; Tomohiro Yamaguchi; Stephan Figge; Detlef Hommel
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009

Growth of M-plane (10-10) InN on LiAlO2 (100) substrate
Yusuke Takagi; Daisuke Muto; Tomohiro Yamaguchi; Tsutomu Araki; Yasushi Nanishi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009

Concentration Evaluation in Nanometre-Sized InGaN Islands Using Transmission Electron Microscopy
A. Pretorius; K. Müller; T. Yamaguchi; R. Kröger; D. Hommel and A. Rosenauer
Microscopy of Semiconducting Materials, Nov. 2008, [Reviewed]

RF-MBE法を用いたLiAlO2基板上無極性Ｍ面InNの結晶成長および構造評価
Nov. 2008

Optical properties of single and multi-layer InGaN quantum dots
K. Sebald; H. Lohmeyer; S. Herlufsen; J. Kalden; J. Gutowski; C. Tessarek; T. Yamaguchi; D. Hommel
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008

Concentration Evaluation in Nanometre-Sized InGaN Islands Using Transmission Electron Microscopy
A. Pretorius; K. Müller; T. Yamaguchi; R. Kröger; D. Hommel; A. Rosenauer
Microscopy of Semiconducting Materials, 2008

On the way to InGaN quantum dots embedded into monolithic nitride cavities
K. Sebald; H. Lohmeyer; J. Gutowski; T. Yamaguchi; C. Kruse; D. Hommel; J. Wiersig; F. Jahnke
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Jun. 2007

Two-step growth of InGaN quantum dots and application to light emitters
T. Yamaguchi; J. Dennemarck; C. Tessarek; K. Sebald; S. Gangopadhyay; J. Falta; J. Gutowski; S. Figge; D. Hommel
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007

Micro-photoluminescence studies of InGaN/GaN quantum dots up to 150 K
K Sebald; H Lohmeyer; J Gutowski; T Yamaguchi; D Hommel
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Jun. 2006

Investigation of InxGa1-xN islands with electron microscopy
A. Pretorius; T. Yamaguchi; M. Schowalter; R. Kröger; C. Kübel; D. Hommel and A. Rosenauer
Microscopy of Semiconducting Materials, May 2006, [Reviewed]

Investigation of InxGa1-xN islands with electron microscopy
2006

Growth and formation of InGaN and GaN nano-structures studied by STM
S. Gangopadhyay; Th. Schmidt; S. Einfeldt; T. Yamaguchi; D. Hommel and J. Falta
e-Journal of Surface Science and Nanotechnology, Jan. 2006, [Reviewed]

Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures
K. Sebald; H. Lohmeyer; J. Gutowski; T. Yamaguchi and D. Hommel
Materials Research Society Symposium Proceedings, 2006, [Reviewed]

Growth and formation of InGaN and GaN nano-structures studied by STM
2006

A novel approach for the growth of InGaN quantum dots
T. Yamaguchi; K. Sebald; H. Lohmeyer; S. Gangopadhyay; J. Falta; J. Gutowski; S. Figge; D. Hommel
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11, 2006

Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements
Takao Miyajima; Yoshihiro Kud; Akihiro Wakahara; Tomohiro Yamaguchi; Tsutomu Araki; Yasushi Nanishi
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006

Growth and morphology of MOVPE grown InGaN/GaN islands
S. Gangopadhyay; Th. Schmidt; S. Einfeldt; T. Yamaguchi; D. Hommel; J. Falta
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006

Optical properties of single InGaN quantum dots up to 150 K
K. Sebald; H. Lohmeyer; J. Gutowski; T. Yamaguchi; D. Hommel
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11, 2006

Two to three dimensional transitions of InGaN and the impact of GaN overgrowth
T. Yamaguchi; S. Einfeldt; S. Gangopadhyay; A. Pretorius; A. Rosenauer; J. Falta; D. Hommel
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006

Surface morphology and island shape of MOVPE grown InGaN nano-island ensembles studied by STM
S. Gangopadhyay; Th. Schmidt; S. Einfetdt; T. Yamaguchi; D. Hommel and J. Falta
Materials Research Society Symposium Proceedings, 2006, [Reviewed]

Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures
2006

Epitaxal growth of InGaN quantum dots grown by MOVPE: Effect of capping process on the structural and optical properties
2006

TEM analyses of wurtzite InGaN islands grown by MOVPE and MBE
A. Pretorius; T. Yamaguchi; C. Kuebel; R. Kroeger; D. Hommel; A. Rosenauer
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006

Diffraction anomalous fine structure investigation of InGaN quantum dots
E. Piskorska; V. Holy; M. Siebert; B. Krause; T. H. Metzger; Th. Schmidt; J. Falta; T. Yamaguchi; D. Hommel
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006

Surface morphology and island shape of MOVPE grown InGaN nano-island ensembles studied by STM
S. Gangopadhyay; Th. Schmidt; S. Einfetdt; T. Yamaguchi; D. Hommel; J. Falta
Materials Research Society Symposium Proceedings, 2006

Epitaxal growth of InGaN quantum dots grown by MOVPE: Effect of capping process on the structural and optical properties
T. Yamaguchi; K. Sebald; S. Figge; J. Gutowski and D. Hommel
Materials Research Society Symposium Proceedings, 2006, [Reviewed]

InNの光学的特性の結晶品質依存性
May 2005

Growth of high-quality InN films by insertion of high-temperature InN buffer layer
T. Yamaguchi; M. Kurouchi; H. Naoi; A. Suzuki; T. Araki; Y. Nanishi
JOURNAL OF CRYSTAL GROWTH, Feb. 2005

Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxy
M. Kurouchi; T. Yamaguchi; H. Naoi; A. Suzuki; T. Araki; Y. Nanishi
JOURNAL OF CRYSTAL GROWTH, Feb. 2005

On the dynamics of InGaN dot formation by RF-MBE growth
T. Yamaguchi; S. Einfeldt; S. Figge; C. Kruse; C. Roder; D. Hommel
Materials Research Society Symposium Proceedings, 2005

On the dynamics of InGaN dot formation by RF-MBE growth
T. Yamaguchi; S. Einfeldt; S. Figge; C. Kruse; C. Roder and D. Hommel
Materials Research Society Symposium Proceedings, 2005, [Reviewed]

Correlation among growth conditions, crystal structures and optical properties of InN
H Naoi; M Kurouchi; T Araki; T Yamaguchi; Y Nanishi
FOURTH INTERNATIONAL CONFERENCE ON PHYSICS OF LIGHT-MATTER COUPLING IN NANOSTRUCTURES (PLMCN4), 2005

Growth of InN and InGaN on Si Substrate for Solar Cell Applications
T. Yamaguchi; C. Morioka; K. Mizuno; M. Hori; T. Araki; A. Suzuki and Y. Nanishi
2003 International Symposium on Compound Semiconductors; Post-Conference Proceedings, Nov. 2004, [Reviewed]

Growth and properties of In-rich InGaN films grown on (0001) sapphire by RF-MBE
M Kurouchi; T Araki; H Naoi; T Yamaguchi; A Suzuki; Y Nanishi
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Oct. 2004

Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001)sapphire and their properties
T Araki; Y Saito; T Yamaguchi; M Kurouchi; Y Nanishi; H Naoi
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Jul. 2004

RF-MBEによる高InN組成InGaNの結晶成長とその評価
Mar. 2004

Band-gap energy and physical properties of InN grown by RF-molecular beam epitaxy
Y. Nanishi; Y. Saito; T. Yamaguchi; F. Matsuda; T. Araki; H. Naoi; A. Suzuki; H. Harina and T. Miyajima
Materials Research Society Symposium Proceedings, 2004, [Reviewed]

Growth of InN and InGaN on Si Substrate for Solar Cell Applications
2004

Spectroscopic observation of oxidation process in InN
E Kurimoto; M Hangyo; H Harima; M Yoshimoto; T Yamaguchi; T Araki; Y Nanishi; K Kisoda
APPLIED PHYSICS LETTERS, Jan. 2004

Characterization of photovoltaic cells using n-InN/p-Si grown by RF-MBE
C. Morioka; T. Yamaguchi; H. Naoi; T. Araki; A. Suzuki and Y. Nanishi
Materials Research Society Symposium Proceedings, 2004, [Reviewed]

Characterization of photovoltaic cells using n-InN/p-Si grown by RF-MBE
2004

Recent development of InN RF-MBE growth and its structural and property characterization
Y Nanishi; Y Saito; T Yamaguchi; T Araki; T Miyajima; H Naoi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 1, NO 6, 2004

Band-gap energy and physical properties of InN grown by RF-molecular beam epitaxy
Y. Nanishi; Y. Saito; T. Yamaguchi; F. Matsuda; T. Araki; H. Naoi; A. Suzuki; H. Harina; T. Miyajima
Materials Research Society Symposium Proceedings, 2004

Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate
T Yamaguchi; Y Saito; C Morioka; K Yorozu; T Araki; A Suzuki; Y Nanishi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Nov. 2003

MBE-growth, characterization and properties of InN and InGaN
Y Nanishi; Y Saito; T Yamaguchi; M Hori; F Matsuda; T Araki; A Suzuki; T Miyajima
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Nov. 2003

RF-molecular beam epitaxy growth and properties of InN and related alloys
Y Nanishi; Y Saito; T Yamaguchi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, May 2003

Influence of substrate polarity on growth of InN films by RF-MBE
F Matsuda; Y Saito; T Muramatsu; T Yamaguchi; Y Matsu; A Koukitu; T Araki; Y Nanishi
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003

InN、InGaNのRF-MBE成長と電気・光学的評価
Jan. 2003, [Reviewed]

Single crystalline InN films grown on Si (111) substrates
2003

Single crystalline InN films grown on Si substrates by using a brief substrate nitridation process
2003

Single crystalline InN films grown on Si substrates by using a brief substrate nitridation process
T. Yamaguchi; K. Mizuo; Y. Saito; T. Noguchi; T. Araki; Y. Nanishi; T. Miyajima and Y. Kudo
Materials Research Society Symposium Proceedings, 2003, [Reviewed]

Single crystalline InN films grown on Si (111) substrates
T. Yamaguchi; K. Mizuo; Y. Saito; T. Araki and Y. Nanishi
Institute of Physics Conference Series, Jan. 2003, [Reviewed]

Electrical and Optical Properties of InN/Si Heterostructure
2003

TEM characterization of InN films grown by RF-MBE
T Araki; S Ueta; K Mizuo; T Yamaguchi; Y Saito; Y Nanishi
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003

Electrical and Optical Properties of InN/Si Heterostructure
K. Mizuo; T. Yamaguchi; Y. Saito; T. Araki and Y. Nanishi
Materials Research Society Symposium Proceedings, 2003, [Reviewed]

Optical properties of InxGa1 - xN with entire alloy composition on InN buffer layer grown by RF-MBE
M. Hori; K. Kano; T. Yamaguchi; Y. Saito; T. Araki; Y. Nanishi; N. Teraguchi and A. Suzuki
physica status solidi (b), Dec. 2002, [Reviewed]

Growth temperature dependence of indium nitride crystalline quality grown by RF-MBE
Y. Saito; H. Harima; E. Kurimoto; T. Yamaguchi; N. Teraguchi; A. Suzuki; T. Araki and Y. Nanishi
physica status solidi (b), Dec. 2002, [Reviewed]

Growth condition dependence of InN film a-axis directions on sapphire (0001) substrate
T. Yamaguchi; T. Araki; Y. Saito; T. Maruyama; Y. Nanishi; N. Teraguchi and Y. Nanishi
Institute of Physics Conference, Sep. 2002, [Reviewed]

窒化物半導体の新展開
Jul. 2002, [Reviewed]

RF-MBE成長単結晶InN膜の光学特性
Jul. 2002

The c-Axis and a-Axis Orientations in InN Grown Directly on (0001) Sapphire Substrate by RF-MBE
T. Yamaguchi; Y. Saito; K. Kano; T. Araki; N. Teraguchi; A. Suzuki and Y. Nanishi
Proceedings of 14th Indium Phosphide and Related Materials, May 2002, [Reviewed]

RF-MBE法を用いて成長したInN膜の電気的特性
May 2002

Effect of sapphire substrate nitridation on determining rotation domain in GaN growth
T Yamaguchi; T Araki; Y Saito; K Kano; H Kanazawa; Y Nanishi; N Teraguchi; A Suzuki
JOURNAL OF CRYSTAL GROWTH, Apr. 2002

Growth of high-quality InN using low-temperature intermediate layers by RF-MBE
Y Saito; T Yamaguchi; H Kanazawa; K Kano; T Araki; Y Nanishi; N Teraguchi; A Suzuki
JOURNAL OF CRYSTAL GROWTH, Apr. 2002

RF-MBE法InN成長における初期成長過程に関する検討
Mar. 2002

Two step growth of InN films on sapphire (0001) substrates without nitridation process by RF-MBE
T. Yamaguchi; Y. Saito; K. Kano; T. Muramatsu; T. Araki; Y. Nanishi; N. Teraguchi and A. Suzuki
Materials Research Society Symposium Proceedings, Feb. 2002, [Reviewed]

Two step growth of InN films on sapphire (0001) substrates without nitridation process by RF-MBE
2002

Growth condition dependence of InN film a-axis directions on sapphire (0001) substrate
T. Yamaguchi; T. Araki; Y. Saito; T. Maruyama; Y. Nanishi; N. Teraguchi; Y. Nanishi
Institute of Physics Conference, 2002

The c-Axis and a-Axis Orientations in InN Grown Directly on (0001) Sapphire Substrate by RF-MBE
2002

Growth temperature dependence of indium nitride crystalline quality grown by RF-MBE
2002

Optical properties of InxGa1 - xN with entire alloy composition on InN buffer layer grown by RF-MBE
M. Hori; K. Kano; T. Yamaguchi; Y. Saito; T. Araki; Y. Nanishi; N. Teraguchi; A. Suzuki
physica status solidi (b), 2002

Influence of growth condition on superconducting characteristics of InN on sapphire (0001)
2002

Influence of growth condition on superconducting characteristics of InN on sapphire (0001)
T. Inushima; T. Takenobu; M. Motokawa; K. Koide; A. Hashimoto; A. Yamamoto; Y. Saito; T. Yamaguchi; Y. Nanishi
Physica Status Solidi C: Conferences, 2002

Polarity of high-quality indium nitride grown by RF molecular beam epitaxy
Y. Saito; Y. Tanabe; T. Yamaguchi; N. Teraguchi; A. Suzuki; T. Araki and Y. Nanishi
physica status solidi (b), Nov. 2001, [Reviewed]

Study of epitaxial relationship in InN growth on sapphire (0001) by RF-MBE
T Yamaguchi; Y Saito; K Kano; T Araki; N Teraguchi; A Suzuki; Y Nanishi
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Nov. 2001

Growth of AlN films on SiC substrates by RF-MBE and RF-MEE
N. Teraguchi; A. Suzuki; Y. Saito; T. Yamaguchi; T. Araki and Y. Nanishi
Journal of Crystal Growth, Sep. 2001, [Reviewed]

RF-MBE成長InN膜の表面構造と電気的特性
Mar. 2001

Electrical properties of InN grown by RF-MBE
2001

Electrical properties of InN grown by RF-MBE
Y. Saito; N. Teraguchi; A. Suzuki; T. Yamaguchi; T. Araki and Y. Nanishi
Materials Research Society Symposium Proceedings, 2001, [Reviewed]

Polarity of high-quality indium nitride grown by RF molecular beam epitaxy
Y. Saito; Y. Tanabe; T. Yamaguchi; N. Teraguchi; A. Suzuki; T. Araki; Y. Nanishi
physica status solidi (b), 2001

Growth of AlN films on SiC substrates by RF-MBE and RF-MEE
2001

RF-MBE法を用いて成長したInN膜の電気的特性
Oct. 2000

RF-MBE法によるSiC基板上GaN成長における水素添加効果
Oct. 2000

Deposition of transparent conducting oxide thin films using pressed powder targets
M. R. Vasquez Jr.; R. G. B. Madera; T. Yamaguchi
7th Asia-Pacific Conference on Plasma Physics, 13 Nov. 2023

ナノコラムLEDにおける連続的なITO電極形成技術
22 Sep. 2023

(10-11)上GaInN/GaInN MQWs成長による高効率赤色発光
21 Sep. 2023

その場XRD-RSMを用いたGaN上GaInN Buffer層挿入GaInN RF-MBE成長－GaInNの成長温度依存性－
21 Sep. 2023

各種In系材料を出発原料に用いたMist CVD成長におけるα-In2O3薄膜の電気的特性に関する評価
21 Sep. 2023

高Mg組成岩塩構造MgZnO薄膜のミストCVD成長
21 Sep. 2023

Mist CVD法によるα-GIO混晶成長とα線検出応用に向けた検討
21 Sep. 2023

Mist CVD法Sn-doped α-Ga2O3薄膜成長におけるSn溶液の静置時間変化
21 Sep. 2023

III族不純物ドープMgO薄膜の正孔捕獲中心
20 Sep. 2023

Growth of AZO thin films from pressed-sintered powder targets under subatmospheric conditions
R. G. B. Madera; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi; M. R. Vasquez Jr.
20th International Conference on Crystal Growth and Epitaxy (ICCGE20), 03 Aug. 2023

Growth of GaInN/GaInN MQWs on nanocolumns with thick GaInN buffer layer using RF-MBE
H. Akagawa; J. Yamada; T. Yamaguchi; R. Togashi; T. Onuma; I. Nomura; T. Honda; K. Kishino
20th International Conference on Crystal Growth and Epitaxy (ICCGE20), 31 Jul. 2023

Far UV optical properties of MgO homoepitaxial and Zn doped MgO films prepared by mist chemical vapor deposition method
T. Onuma; W. Kosaka; H. Kusaka; K. Ogawa; Y. Ota; K. Kaneko; T. Yamaguchi; S. Fujita; T. Honda
The 6th International Workshop on Ultraviolet Materials and Devices (IWUMD2023), 06 Jun. 2023, [Invited]

Sub-bandgap Transition in β-Ga2O3 Crystals Measured by Photoluminescence Excitation Spectroscopy
T. Onuma; R. Adachi; K. Shoji; T. Yamaguchi; K. Sasaki; A. Kuramata; T. Honda; M. Higashiwaki
Compound Semiconductor Week 2023 (CSW 2023), 01 Jun. 2023

発光径Φ5μmのナノコラム発光デバイスの作製
17 Mar. 2023

N2 および Ar/H2 アニールによる SnOx 薄膜の還元状態の比較
17 Mar. 2023

Ar/N2混合ガス中スパッタリングで堆積したSnOx薄膜におけるN2濃度の影響
17 Mar. 2023

Mist CVD法による各種In系粉末を出発原料に用いたα-In2O3の成長機構に関する検討
16 Mar. 2023

Mist CVD法により成長したα-In2O3薄膜の低キャリア濃度化とMOSFET製作
16 Mar. 2023

窒素RFパワー変化によるナノコラム結晶のGaInNバッファ層形状均一化の検討
15 Mar. 2023

その場XRD-RSMを用いたGaN上GaInN Buffer層挿入GaInN RF-MBE成長における格子緩和過程観察
15 Mar. 2023

岩塩構造酸化マグネシウム亜鉛薄膜の真空紫外領域での光電流スペクトル（II）
15 Mar. 2023

ミストCVD法によるIII族ドープ岩塩構造MgZnO薄膜成長
15 Mar. 2023

Crystal growth of Cu3N by mist CVD with ethylenediamine
S. Yoshida; H. Nagai; T. Yamaguchi; T. Onuma; T. Honda
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Growth of ZnO thin films via magnetron sputtering using a custom-made sintered target
R. G. B. Madera; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi; M. R. Vasquez Jr
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Study for composition control in mist CVD growth of α-GIO alloys
K. Yamada; T. Yamaguchi; T. Onuma; T. Honda
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Investigation on the stability of source solution for the α-In2O3 growth by mist CVD
T. Yamamoto; A. Taguchi; R. Yamada; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Roles of In doping in rocksalt-structured MgZnO films grown by mist CVD method
M. Matsuda; K. Ogawa; Y. Ota; T. Yamaguchi; K. Kaneko; S. Fujita; T. Honda; T. Onuma
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Realization of high mobility in α-In2O3 film grown by mist CVD with different concentration of In2O3 powder as source precursor
A. Taguchi; T. Onuma; T. Honda; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

TEM evaluation of in-situ nitrogen plasma irradiated GaInN
A. Tokushige; S. Ohno; Y. Hayakawa; T. Honda; T. Onuma; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Electrical property and valence band offset in conductive MgNiO on sapphire substrates
M. Murayama; A. Ishikawa; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Growth and characterization of AlGaN and multiple quantum wells with varying III/V ratios by RF-MBE
M. Hayasaki; T. Yamaguchi; T. Yamaguchi; T. Honda; T. Onuma
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Structural analysis in epitaxial growth of GaInN by RF-MBE using XRD-RSM
J. Takeuchi; T. Sasaki; H. Yokoyama; T. Onuma; T. Honda; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Twin-free α-Ga2O3 films grown by mist CVD on (0001) α-Al2O3 substrates
R. Yamada; A. Kobayashi; K. Ueno; A. Sekiguchi; T. Onuma; T. Honda; H. Fujioka; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 24 Nov. 2022

Fabrication of monolithic blue micro-LED pixels and investigation of full colorization
H. Chikui; S. Takeda; T Onuma; T. Yamaguchi; T. Honda
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 17 Nov. 2022

Roles of In doped in MgZnO films grown by mist CVD method
M. Matsuda; K. Ogawa; Y. Ota; T. Yamaguchi; K. Kaneko; S. Fujita; T. Honda; T. Onuma
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 15 Nov. 2022

Photocurrent spectra of rocksalt-structured MgZnO films in vacuum UV spectral range
H. Kusaka; W. Kosaka; K. Ogawa; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; T. Onuma
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 15 Nov. 2022

Realization of near-band-edge cathodoluminescence in 190 nm wavelength range by rocksalt-structured MgZnO epitaxial films
T. Onuma; K. Ogawa; W. Kosaka; H. Kusaka; Y. Ota; K. Kaneko; T. Yamaguchi; S. Fujita; T. Honda
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 14 Nov. 2022

Impact of gas type on formation of twin structure in the growth of a-Ga2O3 by mist chemical vapor deposition
R. Yamada; A. Kobayashi; K. Ueno; A. Sekiguchi; T. Onuma; T. Honda; H. Fujioka; T. Yamaguchi
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 14 Nov. 2022

Growth and optical characteristics of high-Al content AlGaN on AlN templates by RF-MBE,under metal-rich conditions
M. Hayasaki; N. Tachibana; M. Hashimoto; T. Yamaguchi; T. Yamaguchi; T. Honda; T. Onuma
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 14 Nov. 2022

Local composition distribution in high Al content AlGaN/AlN quantum wells grown by RF-MBE
M. Hayasaki; T. Yamaguchi; T. Yamaguchi; T. Honda; T. Onuma
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 14 Nov. 2022

Mist CVD 法により成長した酸化インジウムの高移動度化に伴う新機能開拓
12 Nov. 2022

Mist CVD 法 α-Ga2O3成長時に形成される双晶抑制に関する研究
12 Nov. 2022

Mist CVD 法 α-In2O3 成長における原料溶液中の反応に関する検討
12 Nov. 2022

RF-MBE による GaInN 成長における歪み緩和制御
12 Nov. 2022

岩塩構造 MgZnO/MgO ヘテロ接合の製作とバンドアライメント解析
12 Nov. 2022

RF-MBE による β-Ga2O3(-201)基板上への AlN 及び GaN 成長において成長前処理が成長層に及ぼす影響
12 Nov. 2022

Mist CVD 法を用いた Cu3N 成長における原料溶液の検討
12 Nov. 2022

顕微フォトルミネッセンス分光による β-Ga2O3 結晶の微細構造の可視化検討
12 Nov. 2022

in-situ 窒素プラズマ照射された MBE 成長 GaInN の TEM 評価
12 Nov. 2022

Fabrication of Nitrogen-doped TiO2 thin films
12 Nov. 2022

Growth of ZnO thin films via magnetron sputtering using isostatically pressed-sintered powder targets
12 Nov. 2022

RF-MBE 成長した Ga 極性及び N 極性 GaN 薄膜の比較検討
12 Nov. 2022

ナノコラム成長における GaInN/GaInN MQWs のⅤ-Ⅲ族比依存性
12 Nov. 2022

Experimental investigation of the local bonding states of nitrogen-doped SnOx thin-film
K. Watanabe; T. Kawaguchi; T. Yamaguchi; T. Onuma; T. Honda; S. Aikawa
35th International Microprocesses and Nanotechnology Conference (MNC 2022), 10 Nov. 2022

Optimization of N2 concentration in Ar/N2 sputtering deposition for p-type N-doped SnOx thin-film
T. Kawaguchi; T. Kawaguchi; T. Yamaguchi; T. Onuma; T. Honda; S. Aikawa
35th International Microprocesses and Nanotechnology Conference (MNC 2022), 10 Nov. 2022

Microstructural characterization of β-Ga2O3,crystals by photoluminescence mapping measurements
K. Shoji; M. Nakanishi; M. Kasu; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 25 Oct. 2022

Impact of RF power on electrical property of NiO films grown by RF magnetron spattering
Akito Ishikawa; M. Murayama; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 25 Oct. 2022

RF-MBE growth of Mg doped GaN on β-Ga2O3,(-201) substrates
T. Yamaguchi; M. Hayasaki; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 24 Oct. 2022

P-type conductivity in MgxNi1-xO films deposited on sapphire substrates by RF magnetron sputtering
M. Murayama; A. Ishikawa; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 24 Oct. 2022

Growth of α-In2O3 films with different concentrations of In2O3 powder used as source precursor by mist CVD
A. Taguchi; K. Kaneko; K. Goto; T. Onuma; T. Honda; Y. Kumagai; S. Fujita; T. Yamaguchi
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 24 Oct. 2022

Temperature dependence of carrier concentration and Hall mobility in alpha-In2O3 films grown by mist CVD method
A. Taguchi; T. Onuma; K. Goto; K. Kaneko; Y. Kumagai; T. Honda; S. Fujita; T. Yamaguchi
41st Electronic Materials Symposium, 19 Oct. 2022

Analyses of Band Alignment in Rocksalt-structured MgZnO/MgO Interface Grown by Mist CVD
M. Matsuda; K. Ogawa; Y. Ota; T. Yamaguchi; K. Kaneko; S. Fujita; T. Honda; T. Onuma
41st Electronic Materials Symposium, 19 Oct. 2022

Importance of dissolving source precursor of Ga(C5H7O2)3 with HCl in mist CVD for α-Ga2O3 growth
R. Yamada; A. Sekiguchi; T. Onuma; T. Honda; T. Yamaguchi
2022 International Conference on Solid State Devices and Materials (SSDM202), 27 Sep. 2022

ナノコラム形状制御技術を用いた赤色発光ナノコラムμ-LED構造の成長と作製
23 Sep. 2022

ミスト化学気相成長法コランダム構造酸化ガリウム薄膜のガス種による双晶形成への影響
23 Sep. 2022

ミストCVD法によるInドープMgZnO薄膜の成長
23 Sep. 2022

岩塩構造酸化マグネシウム亜鉛薄膜の真空紫外領域での光電流スペクトル
23 Sep. 2022

InドープMgO薄膜の発光特性
23 Sep. 2022

その場XRD-RSM を用いたRF-MBE GaInNヘテロエピタキシャル成長における緩和過程観察
22 Sep. 2022

RF-MBEによるInN緩衝層を用いたGaInNの格子緩和制御
22 Sep. 2022

THVPE法におけるInGaN薄膜成長の膜厚制御性とヘテロ構造の検討
21 Sep. 2022

Mist CVD法を用いたCu3N成長における安定した原料供給の検討
21 Sep. 2022

窒素アニール還元反応によるSnOx薄膜の局所結合状態
21 Sep. 2022

Ar/N2混合雰囲気でスパッタ成膜した部分窒化SnOx­­­の特性評価
21 Sep. 2022

Mist CVD法により成長したα-In2O3薄膜のキャリア濃度とホール移動度の温度依存性
21 Sep. 2022

RF-MBE成長赤色発光MQWにおけるGaInN下地層挿入の効果
20 Sep. 2022

赤色ナノコラム成長におけるGaInNバッファ層のⅤ/Ⅲ族比依存性
20 Sep. 2022

Mist CVD法による(Ga1-xInx)2O3混晶成長の組成制御に向けた検討
20 Sep. 2022

Mist CVD 法における原料溶液中の反応がα-In2O3成長に与える影響
20 Sep. 2022

岩塩構造MgZnOの結晶成長とサブ200 nmの発光特性評価
03 Jun. 2022, [Invited]

Vacuum UV emission property of Zn-doped MgO films grown by mist chemical vapor deposition method
W. Kosaka; K. Ogawa; K. Kusaka; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; T. Onuma
The 5th International Workshop on Ultraviolet Materials and Devices (IWUMD5), 03 Jun. 2022

Vacuum UV Emission Property of Zn-doped MgO films
W. Kosaka; K. Ogawa; H. Kusaka; 1 K. Kaneko; T. Yamaguchi; S. Fujita; T. Honda; T. Onuma
International Conference on Light-Emitting Devices and Their Industrial Applications ’22 (LEDIA ’22), 21 Apr. 2022

Electrical Property and Band-offset in MgxNi1-xO Films Deposited on Sapphire Substrates by RF Magnetron Sputtering
M. Murayama; A. Ishikawa; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
International Conference on Light-Emitting Devices and Their Industrial Applications ’22 (LEDIA ’22), 21 Apr. 2022

ミストCVD成長した岩塩構造MgZnO薄膜の室温真空紫外線発光
26 Mar. 2022

時間分解PL測定による岩塩構造MgZnOの発光特性の評価
26 Mar. 2022

岩塩構造MgZnO/MgO界面におけるバンドアライメント解析
26 Mar. 2022

出発原料にIn2O3パウダーおよびIn(acac)3を用いたMist CVD法によるα-In2O3成長と電気的特性評価
25 Mar. 2022

β-Ga2O3(-201)基板へのAlNとGaNのRF-MBE成長.
25 Mar. 2022

RF-MBE法による高Al組成AlGaN/AlN量子井戸成長と発光特性の評価
24 Mar. 2022

RF-MBEによる多層膜緩衝層を用いた低転位密度GaInNの製作
24 Mar. 2022

TEMによるMist CVD法α-Al2O3基板上α-In2O3の結晶構造解析
24 Mar. 2022

赤色発光MQWsを有するInGaN系ナノコラムにおけるAlGaN障壁層のAl組成依存性
23 Mar. 2022

Impact of Ga1-xInxN underlayer for growth of Ga1-yInyN/Ga1-xInxN MQW,structure
T. Yamaguchi; K. Tahara; J. Yamada; T. Sasaki; H. Yokoyama; T. Onuma; T. Honda; Y. Nanishi; and K. Kishino
The 9th Advanced Functional Materials & Devices (AFMD) & The 4th Symposium for Collaborative Research on Energy Science and Technology (SCREST), 05 Mar. 2022, [Invited]

Fabrication of far-UV emitter around 200 nm ,using ultrawide bandgap semiconductor,structure
T. Onuma; W. Kosaka; M. Hashimoto; M. Hayasaki; T. Yamaguchi; and T. Honda
The 9th Advanced Functional Materials & Devices (AFMD) & The 4th Symposium for Collaborative Research on Energy Science and Technology (SCREST), 05 Mar. 2022, [Invited]

Spatially resolved cathodoluminescence studies on alpha-In2O3 films,grown by mist CVD method
A. Taguchi; K. Shima; M. Matsuda; T. Onuma; T. Honda; S. F. Chichibu; and T. Yamaguchi
The 9th Advanced Functional Materials & Devices (AFMD) & The 4th Symposium for Collaborative Research on Energy Science and Technology (SCREST), 05 Mar. 2022, [Invited]

Far-UV emission around 200 nm in rocksalt-structured MgZnO
T. Onuma; W. Kosaka; S. Hoshi; K. Kudo; K. Ishii; M. Ono; Y. Ota; K. Ogawa; I. Serizawa; K. Kaneko; T. Yamaguchi; S. Fujita; and T. Honda
The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity (IWSingularity 2022) and The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (ISWGPDs 2022), 13 Jan. 2022

RFマグネトロンスパッタ中の酸素プラズマの状態が酸化ニッケルの抵抗率に与える影響
23 Dec. 2021

RF-MBEによる格子緩和制御層上高In組成GaInN MQWの成長と評価
23 Dec. 2021

Mist CVD成長a-In2O3薄膜の電気的特性評価
23 Dec. 2021

真空紫外域で発光する岩塩構造MgZnO薄膜のミストCVD成長
23 Dec. 2021

ミストCVD法により成長したRS-MgZnOにおける深紫外PL寿命の評価
09 Dec. 2021

Growth and optical characteristics of high-AlN content AlGaN on AlN templates by RF-MBE under metal-rich conditions
M. Hayasaki; N. Tachibana; M. Hashimoto; T. Yamaguchi; T. Yamaguchi; T. Honda; and T. Onuma
2021 MRS Fall Meeting, 08 Dec. 2021

Al flux control in growth of AlN on AlN templates by RF-MBE under metal-rich conditions
T. Yamaguchi; N. Tachibana; M. Hashimoto; M. Hayasaki; T. Yamaguchi; T. Honda; and T. Onuma
2021 MRS Fall Meeting, 08 Dec. 2021

出発原料に酸化インジウムパウダーを用いたMist CVD法による酸化インジウム薄膜成長
04 Dec. 2021

ミストCVDにおけるGa2O3薄膜の成長特性
04 Dec. 2021

Mist CVD法によるalpha-In2O3成長に及ぼす 原料溶液混合経過時間の影響
04 Dec. 2021

石英ガラス基板上岩塩構造MgZnOにおける殺菌用UVC発光
04 Dec. 2021

赤色発光LEDの製作に向けた RF-MBEによる緩和制御層上GaInN周期構造の成長と評価
04 Dec. 2021

Mist CVDを用いたGTO薄膜成長におけるSnドープ量変化の影響
03 Dec. 2022

Mist CVDβ型酸化ガリウム成長に塩酸が与える影響
03 Dec. 2022

RF-MBE法によるAlGaN/AlNヘテロ構造と量子井戸構造の成長と評価
03 Dec. 2022

ミストCVD法により成膜したInドープMgO薄膜の発光特性
03 Dec. 2022

RF-MBEによるβ-Ga2O3(-201)基板へのMgドープGaNヘテロ構造の製作
03 Dec. 2022

InドープMgZnO薄膜のミストCVD成長
03 Dec. 2022

micro-LED集積化における側面の制御による電極の形成
03 Dec. 2022

岩塩構造酸化マグネシウム亜鉛MSM型真空紫外センサーの受光感度の温度依存性
03 Dec. 2022

Carrier gas type dependence of Ga2O3 thin film grown by mist Chemical Vapor Deposition
R. Yamada; S. Takahashi; A. Sekiguchi; T. Onuma; T. Honda; and T. Yamaguchi
The 20th International Symposium on Advanced Technology (ISAT-20), 24 Nov. 2021

Growth of GaInN multi quantum well on strain-controlled layer by RF-MBE toward realization of light emitting diodes operating in red spectral region
M. Matsuda; R. Yoshida; K. Tahara; T. Yamaguchi; T. Onuma; and T. Honda
The 20th International Symposium on Advanced Technology (ISAT-20), 24 Nov. 2021

Improvement of Electrical Property of α-In2O3 Films Grown by Mist Chemical Vapor Deposition Using In2O3 Powder as Source Precursor
A. Taguchi; T. Onuma; T. Honda; and T. Yamaguchi
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Residual strain in GaN nanocolumns grown on Si(111)
N. Goto; Y. Hosoya; T. Onuma; T. Yamaguchi; and T. Honda
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Identification of Killer Defects in β-Ga2O3 Schottky Barrier Diodes by Raman Mapping Measurements
M. Nakanishi; K. Shoji; S. Masuya; M. Kasu; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; and T. Onuma
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Relationship between resistivity of NiO thin films and oxygen plasma condition at different deposition pressures
M. Murayama; A. Ishikawa; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; and T. Onuma
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Well width dependence on residual strain in high In composition GaInN/GaInN MQW by RF-MBE
K. Tahara; J. Yamada; T. Yamaguchi; Y. Nanishi; T. Onuma; T. Honda; and K. Kishino
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Emission Properties of Rocksalt-structured MgZnO Microcrystals for VUV Light Emitter
W. Kosaka; S. Hoshi; K. Kanta; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; and T. Onuma
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Impact on InN Buffer Layer Inserted into GaInN/GaN Interfaces By RF-MBE
D. Itabashi; R. Yoshida; T. Yamaguchi; T. Onuma; and T. Honda
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Impacts of hydrochloric acid concentration and growth temperature on mist chemical vapor deposition growth of Ga2O3
R. Yamada; S. Takahashi; A. Sekiguchi; T. Onuma; T. Honda; and T. Yamaguchi
The 6th International Conference on Advanced Electromaterials (ICAE 2021), 11 Nov. 2021

Role of Ca in CaF2 incorporated In2O3 transparent conductive films
K. Oe; S. Mori; K. Watanabe; H. Nagai; T. Yamaguchi; T. Onuma; T. Honda and S. Aikawa
34th International Microprocesses and Nanotechnology Conference (MNC 2021), 29 Oct. 2021

Demonstration of flexible transparent conductive film using B-doped In2O3
S. Mori; Y. Ichinoseki; K. Watanabe; K. Murano; K. Oe; H. Nagai; T. Yamaguchi; T. Onuma; T. Honda and S. Aikawa
34th International Microprocesses and Nanotechnology Conference (MNC 2021), 29 Oct. 2021

Charge transfer and conduction type conversion in n-type SnO2 thin films by nitrogen annealing
K. Watanabe; T. Kawaguchi; T. Yamaguchi; T. Onuma; T. Honda and S. Aikawa
34th International Microprocesses and Nanotechnology Conference (MNC 2021), 26 Oct. 2021

Evaluation of radiation detection characteristics by α-Ga2O3
H. Nakagawa; R. Yamada; M. Hashimoto; T. Yamaguchi; T. Onuma; T. Honda; T. Nakano; T. Aoki
The 19th International Conference on Global Research and Education inter-Academia 2021, 21 Oct. 2021

Impact of oxygen plasma condition on resistivity of RF magnetron sputtered NiO thin films
M. Murayama; A. Ishikawa; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; and T. Onuma
40th Electronic Materials Symposium, 11 Oct. 2021

Evaluation of Microstructures in β-Ga2O3 Crystals Using Raman Mapping
M. Nakanishi; K. Shoji; S. Masuya; M. Kasu; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; and T. Onuma
40th Electronic Materials Symposium, 11 Oct. 2021

緩和制御層上GaInN周期構造のRF-MBE成長と評価
23 Sep. 2021

緑色発光を用いたβ-Ga2O3結晶の微細構造評価
21 Sep. 2021

ミスト化学気相成長法における塩酸と成長温度が酸化ガリウム成長に与える影響
13 Sep. 2021

Mist CVD法による酸化インジウムパウダーを用いたα-In2O3成長
13 Sep. 2021

(0001)および（10-11）面 InGaN/GaN ナノコラム上 InGaN/AlGaN MQWs の発光特性
13 Sep. 2021

ZnドープMgO薄膜の発光特性
12 Sep. 2021

MgO単結晶の真空紫外励起子スペクトル
12 Sep. 2021

窒素アニールによるn型SnO2薄膜の電荷移動と伝導型変換
12 Sep. 2021

195 nmで発光する岩塩構造MgZnO薄膜のミストCVD成長
12 Sep. 2021

BドープIn2O3透明導電膜における微量不純物濃度での移動度向上
12 Sep. 2021

CaF2ドープIn2O3透明導電膜における表面ラフネスおよび導電率のドーパント濃度依存性
12 Sep. 2021

ハニカム配列GaInN/GaNナノコラムLEDの製作プロセス
12 Sep. 2021

RF-MBE法によるGaInN/GaInN多重量子井戸成長と評価
10 Sep. 2021

CaF2ドープ In2O3透明導電膜における Ca と F の効果
03 Sep. 2021

窒素アニールによる n 型 SnOx薄膜の伝導型変換
03 Sep. 2021

B ドープ In2O3透明導電膜におけるドーパント濃度の依存性
02 Sep. 2021

VUV Emission Properties Of Rocksalt-structured MgZnO Microcrystals Prepared On Quartz Glass Substrates
W. Kosaka; S. Hoshi; K. Kudo; Y. Igari; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; and T. Onuma
Compound Semiconductor Week 2021 (CSW 2021), 11 May 2021

Growth of AlGaN on AlN template by RF-MBE and deep UV sensor characteristics
M. Hashimoto; N. Tachibana; M. Nakanishi; J. Cho; T. Yamaguchi; T. Honda; and T. Onuma
Compound Semiconductor Week 2021 (CSW 2021), 11 May 2021

Mist CVD growth of alpha-In2O3 films using indium oxide powder as source precursor
A. Taguchi; S. Takahashi; T. Yamaguchi; T. Onuma; T. Honda; K. Kaneko; and S. Fujita
Compound Semiconductor Week 2021 (CSW 2021), 11 May 2021

Energy conversion efficiency under different input electrical power conditions in visible-LED-based OWPT system
H. Yokoyama; N. Yosuke; T. Yamaguchi; T. Miyamoto; T. Onuma; and T. Honda
The 3rd Optical Wireless and Fiber Power Transmission Conference (OWPT2021), 20 Apr. 2021

Deep UV optical properties of high-Mg-content rocksalt-structured MgZnO
T. Onuma; K. Kudo; K. Ishii; M. Ono; Y. Ota; K. Kaneko; T. Yamaguchi; S. Fujita; and T. Honda
Materials Research Society, 2021 Spring Meeting, 18 Apr. 2021, [Invited]

顕微ラマンマッピング測定による酸化ガリウム結晶の微細構造評価
19 Mar. 2021

酸化物半導体結晶Ga2O3およびIn2O3の準安定相発現機構の検討
18 Mar. 2021

GaN系ナノコラムにおけるn-GaN平坦層がInGaN/AlGaN MQWs発光層に与える影響
18 Mar. 2021

GaN上GaInN膜成長初期のSi層挿入数に対する格子緩和過程の変化
18 Mar. 2021

合成石英基板上に成長した岩塩構造 MgZnO 微結晶の真空紫外域での発光特性
18 Mar. 2021

モノリシック青色マイクロLEDピクセルの製作とフルカラー化の検討
17 Mar. 2021

TEMによるMist CVD法 (0001)α-Al2O3基板上α-In2O3の欠陥解析
16 Mar. 2021

Developments of Semiconductor-based UVC Emitters and Sensors for Sterilization
T. Onuma; T. Yamaguchi; and Tohru Honda
The 3rd Symposium for Collaborative Research on Energy Science and Technology (SCREST-3rd), 05 Mar. 2021, [Invited]

Impact of indium oxide powder as source precursor on α-In2O3 films grown by mist CVD
A. Taguchi; S. Takahashi; T. Yamaguchi; T. Onuma; T. Honda
The 3rd Symposium for Collaborative Research on Energy Science and Technology (SCREST-3rd), 05 Mar. 2021

Impact of hydrochloric acid on the Mist CVD growth of Ga2O3
R. Yamada; S. Takahashi; T. Yamaguchi; T. Onuma; T. Honda
The 3rd Symposium for Collaborative Research on Energy Science and Technology (SCREST-3rd), 05 Mar. 2021

Characterization of GaInN multi-layers grown on strain-controlled layer by RF-MBE
M. Matsuda; R. Yoshida; K. Tahara; T. Yamaguchi; T. Onuma; T. Honda
The 3rd Symposium for Collaborative Research on Energy Science and Technology (SCREST-3rd), 05 Mar. 2021

In situ XRD RSM measurements in MBE growth of GaInN film with low‐temperature GaInN buffer layer
T. Yamaguchi; T. Sasaki; T. Kiguchi; S. Ohno; H. Hirukawa; R. Yoshida; T. Onuma; T. Honda; and M. Takahasi; T. Araki; and Y. Nanishi
The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), 02 Mar. 2021

Epitaxial mist chemical vapor deposition growth and characterization of α-In2O3 films on α-Al2O3 substrates
T. Yamaguchi; T. Nagata; S. Takahashi; T. Kiguchi; A. Sekiguchi; T. Onuma; T. Honda; K. Goto; Y. Kumagai; K. Kaneko; and S. Fujita
The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), 02 Mar. 2021

殺菌応用を目指した真空・深紫外線半導体発光材料の開発
27 Jan. 2021, [Invited]

Fabrication of monolithic blue μ-LED pixels and their color conversion by phosphors
S. Takeda; T. Yamaguchi; T. Onuma; and T. Honda
The 19th International Symposium on Advanced Technology (ISAT-19), 14 Jan. 2021

Radiation patterns of MgO and AlN evaluated by angle-resolved cathodoluminescence measurements
Y. Igari; K. Kudo; W. Kosaka; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; and T. Onuma
The 19th International Symposium on Advanced Technology (ISAT-19), 14 Jan. 2021

Parametric study of fabrication processes of micro-LEDs array and characterization of emission properties
H. Chikui; S. Takeda; T. Abe; T. Onuma; T. Yamaguchi; and T. Honda
The 19th International Symposium on Advanced Technology (ISAT-19), 14 Jan. 2021

RF-MBE法による高In組成GaInN/GaInN周期構造の成長と評価
23 Dec. 2020

Mist CVD法における(0001)α-Al2O3基板上In2O3成長に塩酸が与える影響
23 Dec. 2020

窒素イオン注入による酸化ガリウム結晶の光電流スペクトルの変化
23 Dec. 2020

ICP-RIEによるモノリシック青色μ-LEDピクセルの製作
23 Dec. 2020

AlNテンプレート上のAlGaNの分極電場と深紫外線センサー特性の関係
23 Dec. 2020

Designing Optically Isolated LED Arrays Embedded in Si Micro-cup Substrates
K. Sato; Y. Iwata; T. Onuma; T. Yamaguchi; T. Honda
International Display Workshops 2020, 10 Dec. 2020

放射光を活用したGaInN結晶成長のその場観察
31 Oct. 2020

Comparison of Microstructures in alpha-Ga2O3 and alpha-In2O3 Films Grown on alpha-Al2O3 Substrates by Mist CVD
Y. Hayakawa; S. Ohno; T. Yamaguchi; T. Kiguchi; S.Takahashi; H. Yokoo; T. Onuma; and T. Honda
39th Electronic Materials Symposium, 08 Oct. 2020

Growth of AlGaN on AlN Template by RF-MBE and Their Spectral Responsivity in Deep UV Spectral Region
M. Hashimoto; N. Tachibana; M. Nakanishi; T. Yamaguchi; T. Honda; and T. Onuma
39th Electronic Materials Symposium, 08 Oct. 2020

Relationship between crystallinity and emission property in RF-MBE growth of GaN
N. Tachibana; M. Hashimoto; T. Yamaguchi; T. Honda; and T. Onuma
39th Electronic Materials Symposium, 08 Oct. 2020

RF-MBE growth and characterization of high-In-content GaInN/GaInN multiple layers
K. Tahara; R. Yoshida; H. Hirukawa; T. Yamaguchi; T. Onuma; and T. Honda
39th Electronic Materials Symposium, 07 Oct. 2020

Deep and Vacuum UV Emission Properties in Rocksalt-structured MgZnO
T. Onuma; K. Kudo; K. Ishii; M. Ono; Y. Ota; K. Kaneko; T. Yamaguchi; S. Fujita; and T. Honda
39th Electronic Materials Symposium, 07 Oct. 2020

GaNのRF-MBE成長における結晶性と発光特性の関係
11 Sep. 2020

溶媒キャスト法を用いたLED素子分離用透明ポリイミド絶縁膜の形成
11 Sep. 2020

GaInN/GaN成長時の格子緩和に対するSiアンチサーファクタントの効果
11 Sep. 2020

RF-MBE成長した高In組成GaInN/ GaInN多重量子井戸における障壁層のIn組成と周期数が発光特性へ及ぼす影響
11 Sep. 2020

酸化ガリウム結晶への窒素イオン注入が分光感度特性に及ぼす影響
09 Sep. 2020

岩塩構造MgZnO薄膜における深紫外PL寿命の評価
09 Sep. 2020

Fabrication process of GaInN/GaN honeycomb array nanocolumn LEDs for integration of surface plasmonic resonance,scheme
A. Ueno; G. Imamura; K. Yoshida; K. Takimoto; I. Nomura; R. Togashi; T. Yamaguchi; T. Honda; K. Kishino
International Conference on Light-Emitting Devices and Thier Industrial Applications ’20 (LEDIA ’20), 21 Apr. 2020

Optical characteristics of high–indium-content GaInN MQWs grown on different templates by RF–MBE
R. Yoshida; H. Hirukawa; K. Tahara; T. Yamaguchi; T. Onuma; T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’20 (LEDIA ’20), 21 Apr. 2020

Structural analyses of α-In2O3 grown on α-Al2O3 substrates by mist CVD
Y. Hayakawa; S. Ohno; T. Yamaguchi; T. Kiguchi; H. Yokoo; T. Onuma; T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’20 (LEDIA ’20), 21 Apr. 2020

Fabrication of μ-LED pixels and evaluation,of luminescent characteristics
H. Chikui; S. Takeda; K. Sato; T. Onuma; T. Yamaguchi; M. Shimizu; T. Takahashi; T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’20 (LEDIA ’20), 21 Apr. 2020

Growth of AlGaN films on AlN template by,RF-plasma assisted molecular beam epitaxy
M. Hashimoto; N. Tachibana; T. Honda; T. Yamaguchi; T. Onuma
International Conference on Light-Emitting Devices and Thier Industrial Applications ’20 (LEDIA ’20), 21 Apr. 2020

Power Supply Efficiency of Optical Wireless Power Transmission Systems Using Visible LEDs and Silicon Solar Cells
H. Yokoyama; T. Yamaguchi; Y. Ushida; H. Hirukawa; T. Onuma; T. Honda
The 2nd Optical Wireless and Fiber Power Transmission Conference (OWPT2020), 21 Apr. 2020

RF-MBEサファイア基板窒化時にPBN放電管が与える影響
15 Mar. 2020

ポリイミド薄膜を用いたLED素子分離の検討
14 Mar. 2020

GaInN/GaN 規則配列ナノコラム結晶における活性層の構造と光学特性の関係
13 Mar. 2020

窒素イオン注入酸化ガリウム結晶の光電流スペクトル
13 Mar. 2020

岩塩構造MgZnO薄膜の時間分解フォトルミネッセンス分光
12 Mar. 2020

Epitaxial relationship of Cu3N grown on YSZ(001) substrate by mist CVD method
N. Wakabayashi; R. Takigasaki; T. Yamaguchi; T. Honda and T. Onuma
47th Conference on the Physics & Chemistry of Surfaces & Interfaces, 22 Jan. 2020

RF-MBE Growth of Mg-Doped InN Films Using Droplet Elimination by Radical Beam Irradiation Method
T. Yamaguchi; T. Araki and Y. Nanishi
The 3rd International Symposium of the Vacuum Society of the Philippines (ISVSP2020), 08 Jan. 2020

Optical characteristics of high-In-incorporated GaInN MQWs grown by RF-MBE
R. Yoshida; Y. Nakajima; H. Hirukawa; S. Ohno; T. Yamaguchi; T. Onuma; and T. Honda
The 18th International Symposium on Advanced Technology (ISAT-18), 13 Dec. 2019

Microstructural analysis using TEM in GaInN film grown by RF-MBE
S. Ohno; H. Hirukawa; R. Yoshida; T. Yamaguchi; T. Kiguchi; H. Hashimoto; T. Onuma and T. Honda
The 18th International Symposium on Advanced Technology (ISAT-18), 13 Dec. 2019

LED miniaturization for monolithic μ-LED using ICP etching
S. Takeda; T. Yamaguchi; T. Onuma and T. Honda
The 18th International Symposium on Advanced Technology (ISAT-18), 13 Dec. 2019

Structural characterization of epitaxial GaInN films by X-ray diffraction
H. Hirukawa; R. Yoshida; T. Yamaguchi; T. Onuma and T. Honda
The 18th International Symposium on Advanced Technology (ISAT-18), 13 Dec. 2019

Toward the Realization of Optical Wireless Power Transmission System Using Visible Light
T. Yamaguchi; H. Hirukawa; H. Yokoyama; S. Ohno; Y. Ushida; T. Onuma and T. Honda
2019 International Symposium on Novel and Sustainable Technology (2019 ISNST), 12 Dec. 2019

Mist CVD法によるGa2O3成長に塩酸が与える影響
07 Dec. 2019

可視光発光ダイオードおよびシリコン太陽電池を用いた光無線給電システムの効率検討
07 Dec. 2019

太陽電池を用いた可視光通信システムの確立に向けて
07 Dec. 2019

RF-MBE法によるGaNテンプレート上へのAlGaN成長におけるGaNバッファ層のⅤ/Ⅲ比依存性の検討
20 Nov. 2019

VUV Exciton Emission Spectra of MgO Single Crystals
K. Kudo; S. Hoshi; M. Ono; Y. Fujiwara; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita and T. Onuma
The 9th Asia-Pacific Workshop on Widegap Semiconductors(APWS2019), 12 Nov. 2019

Optical-isolation of micro-LED pixels integrated in Si micro-cup substrate
K. Sato; Y. Kamei; R. Nawa; S. Aikawa; Y. Ushida; T. Onuma; T. Yamaguchi and T. Honda
The 9th Asia-Pacific Workshop on Widegap Semiconductors(APWS2019), 11 Nov. 2019

InGaN/GaN ハニカム構造ナノコラ結晶の成長と評価
31 Oct. 2019

RF-MBEによるGaInN薄膜の成長温度特性
29 Oct. 2019

Optical characteristics of high In composition GaInN MQWs grown by RF-MBE
R. Yoshida; Y. Nakajima; H. Hirukawa; S. Ohno; T. Yamaguchi; T. Onuma and T. Honda
38th Electronic Materials Symposium, 10 Oct. 2019

Epitaxial relationship Cu3N layer grown on c-plane sapphire substrate by Mist CVD
N. Wakabayashi; M. Takahashi; T. Yamaguchi; H. Nagai; M. Sato; T. Onuma and T. Honda
38th Electronic Materials Symposium, 10 Oct. 2019

Impact of hydrochloric acid on mist CVD growth of GIO ternary alloys
S.Takahashi; K. Rikitake; T. Yamaguchi; H. Nagai; M. Sato; T. Onuma and T. Honda
38th Electronic Materials Symposium, 09 Oct. 2019

Comparative study on DUV emission properties of Rocksalt structured MgxZn1-xO alloys
K. Kudo; K. Ishii; M. Ono; Y. Fujiwara; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita and T. Onuma
38th Electronic Materials Symposium, 09 Oct. 2019

高In組成GaInN周期構造の光学特性
18 Sep. 2019

MgO単結晶の真空紫外線領域のカソードルミネセンススペクトル
18 Sep. 2019

In-situ XRD RSM Measurements in MBE Growth of GaInN at Different Temperatures
T. Yamaguchi; T. Sasaki; M. Takahasi; S. Ohno; T. Araki; Y. Nanishi; T. Onuma and T. Honda
The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), 11 Jul. 2019

Structural analyses of GaInN films grown at different temperatures on (0001)GaN/α-Al2O3 templates by RF-MBE
S. Ohno; T. Yamaguchi; H. Hirukawa; T. Araki; H. Hashimoto; T. Onuma and T. Honda
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), 08 Jul. 2019

Fabrication of LED pixels of 16×16 array structure using Si micro-cup substrate
K. Sato; Y. Kamei; R. Nawa; S. Aikawa; Y. Ushida; T. Onuma; T. Yamaguchi and T. Honda
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), 08 Jul. 2019

Strain Relaxation in Al-rich AlxGa1-xN Films Growth by RF plasma-assisted Molecular Beam Epitaxy
N. Tachibana; T. Yamaguchi; T. Honda and T. Onuma
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), 08 Jul. 2019

Mist CVD法によるGIO混晶成長に塩酸が与える影響
14 Jun. 2019

ミストCVD法によるCu3N成長
14 Jun. 2019

VUV Cathodoluminescence Spectra of ,Rocksalt-structured MgZnO/MgO Quantum Wells
K. Kudo; K. Ishii; M. Ono; Y. Fujiwara; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita and T. Onuma
Compound Semiconductor Week 2019(CSW2019), 21 May 2019

Electrical and structural properties of Sn-doped a-Ga2O3 thin films grown by mist chemical vapor deposition
S. Mochizuki; T. Yamaguchi; K. Rikitake; T. Onuma and T. Honda
Compound Semiconductor Week 2019(CSW2019), 21 May 2019

Structural analyses using TEM and XRD of,GaInN films grown on GaN templates by RF-MBE
S. Ohno; T. Yamaguchi; H. Hirukawa; T. Araki; H. Hashimoto; T. Onuma and T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’19 (LEDIA ’19), 24 Apr. 2019

Fabrication of micro-LED display of 16×16 array structure using Si micro-cup substrate
K. Sato; Y. Kamei; R. Nawa; S. Aikawa; Y. Ushida; T. Onuma; T. Yamaguchi and T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’19 (LEDIA ’19), 24 Apr. 2019

Cathodoluminescence properties of Rocksalt-structured MgZnO/MgO Quantum Wells for VUV Light Emitter
K. Kudo; K. Ishii; M. Ono; Y. Fujiwara; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita and T. Onuma
International Conference on Light-Emitting Devices and Thier Industrial Applications ’19 (LEDIA ’19), 24 Apr. 2019

Prototype optical wireless power transmission system using blue LD as light source and LED as photovoltaic receiver
H. Hirukawa; T. Yamaguchi; Y. Ushida; T. Onuma and T. Honda
The 1st Optical Wireless and Fiber Power Transmission Conference (OWPT2019), 24 Apr. 2019

Growth of AlxGa1-xN Films by Plasma-assisted Molecular Beam Epitaxy for Deep UV Optical Devices
N. Tachibana; T. Yamaguchi; T. Honda and T. Onuma
International Conference on Light-Emitting Devices and Thier Industrial Applications ’19 (LEDIA ’19), 24 Apr. 2019

光熱偏向分光法によるGaN自立基板上ホモエピタキシャル層の評価
12 Mar. 2019

RF-MBEより成長した高In組成GaInNの成長温度特性
11 Mar. 2019

岩塩構造MgZnO/MgO量子井戸における量子閉じ込め効果
11 Mar. 2019

RF-MBE法GaInNヘテロエピタキシャル成長における放射光その場X線回折測定
11 Mar. 2019

規則配列InGaNナノコラムを用いた赤色発光LED結晶
11 Mar. 2019

総合討論 結晶工学×放射光シンポジウム
11 Mar. 2019

酸化ガリウム結晶における電界変調反射スペクトルの観測
11 Mar. 2019

Carbon nanotube dispersed Ga2O3 films fabricated by molecular precursor,method
T. Honda; Y. Takahashi; R. Yoshida; C. Mochizuki; H. Nagai; T. Onuma; T. Yamaguchi and M. Sato
The 1st Symposium for Collaborative Research on Energy Science and Technology (SCREST-1st), 10 Jan. 2019

Toward fabrication of GaInN-based devices: Epitaxial growth and characterization of GaInN by RF-MBE
T. Yamaguchi; Y. Nakajima; H. Hirukawa; R. Yoshida; T. Onuma; and T. Honda
The 1st Symposium for Collaborative Research on Energy Science and Technology (SCREST-1st), 10 Jan. 2019

マイクロLEDディスプレイの実現のためのブラックマトリクス原料の比較検討
08 Dec. 2018

Relationship between Relaxation ratio and growth temperature of GaInN by RF-MBE
Y. Nakajima; T. Honda; T. Yamaguchi; and T. Onuma
Pacific Rim Symposium on Surfaces, Coatings and Interfaces (Pacsurf2018), 05 Dec. 2018

Effect of α-(AlxGa1-x)2O3 Overgrowth on MSM-Type α-Ga2O3,Ultraviolet Photodetectors Grown by Mist CVD
K. Rikitake; T. Yamaguchi; T. Onuma; and T. Honda
Pacific Rim Symposium on Surfaces, Coatings and Interfaces (Pacsurf2018), 05 Dec. 2018

Carbon-nanotube Dispersed Ga2O3 Films for UV Transparent Electrodes Fabricated by Molecular Precursor Method
T. Honda; Y. Takahashi; R. Yoshida; C. Mochizuki; H. Nagai; T. Onuma; T. Yamaguchi; and M. Sato
Pacific Rim Symposium on Surfaces, Coatings and Interfaces (Pacsurf2018), 03 Dec. 2018

μ-LEDディスプレイの実現に向けたμ-LEDアレイ構造の製作
29 Nov. 2018

各種基板上に成長したIn2O3の結晶構造と電気的特性評価
29 Nov. 2018

Epitaxial growth of Cu3N films on (0001)Al2O3 substrates by mist chemical vapor deposition
T. Yamaguchi; H. Itoh; M. Takahashi; H. Nagai; T. Onuma; T. Honda and M. Sato
The 17th International Symposium on Advanced Technology (ISAT-17), 14 Nov. 2018

Fabrication of µ-LED arrays toward future realization of µ-LED display
R. Nawa; S. Takeda; Y. Kamei; T. Onuma; T. Yamaguchi; and T. Honda
The 17th International Symposium on Advanced Technology (ISAT-17), 14 Nov. 2018

Analysis of Deep Ultraviolet Emission Properties in Rocksalt-structured MgxZn1-xO Films
M. Ono; K. Ishii; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; and T. Onuma
The 17th International Symposium on Advanced Technology (ISAT-17), 14 Nov. 2018

Study on wavelength matching for optical wireless power transmission for visible light
H. Hirukawa; T. Yamaguchi; T. Onuma; and T. Honda
The 17th International Symposium on Advanced Technology (ISAT-17), 14 Nov. 2018

Photoluminescense measurements of GaInN grown at different temperatures by RF-MBE
R. Yoshida; Y. Nakajima; H. Hirukawa; T. Yamaguchi; T. Onuma; and T. Honda
The 17th International Symposium on Advanced Technology (ISAT-17), 14 Nov. 2018

Growth and Characterization of Single Crystalline alpha-Ga2O3 Film on c-plane Sapphire Substrates by Mist CVD
K. Rikitake; T. Yamaguchi; T. Onuma; and T. Honda
The 17th International Symposium on Advanced Technology (ISAT-17), 14 Nov. 2018

GaInN growth by RF-MBE for underlying layers in red LEDs
Y. Nakajima; K. Uehara; T. Yamaguchi; T. Onuma and T. Honda
International Workshop on Nitride Semiconductors (IWN 2018), 13 Nov. 2018

Evaluation of Al2O3/n-, p-GaN samples by photothermal deflection spectroscopy
K. Fukuda; Y. Asai; L. Sang; A. Yoshigoe; A. Uedono; T. Onuma; T. Yamaguchi; T. Honda; and M. Sumiya
International Workshop on Nitride Semiconductors (IWN 2018), 13 Nov. 2018

可視光電力伝送の可能性探索~プロトタイプ製作と問題点抽出~
01 Nov. 2018

PDS measurement for III-V nitride samples ~InxGa1-xN, ion-implanted GaN and MOS structure~
K. Fukuda; T. Onuma; T. Yamaguchi; T. Honda; and M. Sumiya
37th Electronic Materials Symposium, 12 Oct. 2018

Fabrication of double schottky type photodetector using corundum-structured gallium oxide
K. Rikitake; T. Yamaguchi; T. Onuma and T. Honda
37th Electronic Materials Symposium, 11 Oct. 2018

Surface and bulk electronic structures of unintentionally-doped InGaN epilayers by hard X-ray photoelectron spectroscopy
M. Imura; S. Tsuda; T. Nagata; H. Yoshikawa; Y. Yamashita; K. Kobayashi; Y. Koide; T. Yamaguchi; T. Araki; and Y. Nanishi
37th Electronic Materials Symposium, 11 Oct. 2018

Growth of Cu3N Films by mist Chemical Vapor Deposition
T. Yamaguchi; H. Itoh; M. Takahashi; T. Onuma; H. Nagai; T. Honda; and M. Sato
2018 International Symposium on Novel and Sustainable Technology (ISNST2018), 05 Oct. 2018

光熱偏向分光法によるMgイオン注入GaN層の評価
19 Sep. 2018

Al2O3/n-, p-GaN構造の光熱偏向分光法による評価
19 Sep. 2018

Bandgap fluctuation in rocksalt-structured MgxZn1-xO alloys
T. Onuma; M. Ono; K. Ishii; K. Kaneko; T. Yamaguchi; S. Fujita; and T. Honda
The 10th International Workshop on ZnO and Related Materials (IWZnO 2018), 13 Sep. 2018

Excitation density and temperature dependence of deep ultraviolet cathodoluminescence in rocksalt-structured MgxZn1-xO
M. Ono; K. Ishii; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; and T. Onuma
The 10th International Workshop on ZnO and Related Materials (IWZnO 2018), 11 Sep. 2018

In situ XRD RSM Measurements in MBE Growth of GaInN on InN
T. Yamaguchi; T. Sasaki; M. Takahasi; T. Onuma; T. Honda; T. Araki; and Y. Nanishi
20th International Conference on Molecular Beam Epitaxy (ICMBE 2018), 04 Sep. 2018

Recent Progress and Challenges of InN and In-rich InGaN growth by RF-MBE,using DERI process
Y. Nnanishi; T. Yamaguchi; S. Mouri; T. Araki; T. Sasaki; and M. Takahasi
20th International Conference on Molecular Beam Epitaxy (ICMBE 2018), 04 Sep. 2018

光熱偏向分光法によるイオン注入したGaNの評価
30 Aug. 2018

岩塩構造MgxZn1-xO薄膜における深紫外線発光メカニズム
29 Aug. 2018

水溶液スプレー法によるZnO薄膜製作検討
29 Aug. 2018

赤色LED製作に向けたRF-MBE法によるSi基板上自己形成GaNナノコラム構造の製作検討
29 Aug. 2018

10×10アレイ構造Siマイクロカップ基板を用いたμ-LEDディスプレイの製作
29 Aug. 2018

ミストCVD法によるα-In2O3の結晶成長と電気的特性評価
29 Aug. 2018

RF-MBE法を用いたGaInNの成長温度と緩和率の関係検討
28 Aug. 2018

深紫外光検出器のためのGa2O3薄膜のミストCVD成長
28 Aug. 2018

Evaluation of Structural Disorder and In-Gap States of III-V nitrides by Photothermal Deflection Spectroscopy
M. Sumiya; K. Fukuda; Y. Nakano; S. Ueda; T. Yamaguchi; T. Onuma; and T. Honda
The 7th International Symposium on Growth of III-Nitrides (ISGN-7), 09 Aug. 2018

Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy
M. Sumiya; K. Fukuda; S. Takashima; T. Yamaguchi; T. Onuma; T. Honda; and A. Uedono
The 19th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-19), 07 Jun. 2018

Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping
T. Onuma; Y. Nakata; K. Sasaki; T. Masui; T. Yamaguchi; T. Honda; A. Kuramata; S. Yamakoshi and M. Higashiwaki
Compund Semiconductor Week 2018 (CSW 2018), 01 Jun. 2018

Spectroscopic Ellipsometry Study on P-Type NiO Films
M. Ono; K. Sasaki; T. Yamaguchi; M. Higashiwaki; A. Kuramata; S. Yamakoshi; T. Honda; and T. Onuma
International Conference on Light-Emitting Devices and Thier Industrial Applications ’18 (LEDIA ’18), 27 Apr. 2018

Fabrication of 10×10 array structure of micro-LED display using Si micro-cup substrate
R. Nawa; T. Onuma; T. Yamaguchi; J. -S. Jang; T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’18 (LEDIA ’18), 26 Apr. 2018

III-V族窒化物の価電子帯構造およびギャップ内準位の評価
20 Mar. 2018

岩塩構造MgxZn1-xOの吸収端の観測と電子状態計算
20 Mar. 2018

イオン注入したGaNの光熱偏向分光法による評価
20 Mar. 2018

岩塩構造MgxZn1-xOにおける深紫外線カソードルミネセンスの温度および励起密度依存性
20 Mar. 2018

窒素ドープ酸化ガリウム薄膜における青色発光の強度変化
20 Mar. 2018

10×10 Siマイクロカップ基板でのμ-LED集積化
20 Mar. 2018

alpha-Ga2O3を用いたダブルショットキー型光検出器の製作
19 Mar. 2018

放射光X線回折測定を用いたGaInN/InN成長のその場観察～InN解離温度領域での振る舞い～
18 Mar. 2018

Mg ドーピングによる高 In 組成 InGaN の表面-バルク電子状態変化
17 Mar. 2018

産学連携教育システム実現への可能性
14 Mar. 2018

放射光を活用したIn 系窒化物半導体成長中のその場観察
12 Mar. 2018

Influence of interface state and band bending on In and N polar InN from Angle-resolved XPS
Y. Nakajima; T. Onuma; T. Yamaguchi and T. Honda
45th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI 45), 15 Jan. 2018

ミストCVD法により成長したIn2O3薄膜を用いたTFT製作検討
09 Dec. 2017

コランダム構造酸化ガリウムソーラーブラインド光検出器の開発
09 Dec. 2017

Growth of Ga2-xSnxO3 films by mist chemical vapor deposition
K.Rikitake; T. Kobayashi; T. Yamaguchi; T. Onuma and T. Honda
Materials Research Society, 2017 Fall Meeting & Exhibit, 30 Nov. 2017

Crystal Structure Control in Epitaxial Growth of In2O3 by Mist CVD
T. Kobayashi; K. Tanuma; T. Yamaguchi; T. Onuma and T. Honda
Materials Research Society, 2017 Fall Meeting & Exhibit, 30 Nov. 2017

Relationship between Temperature and Growth Rate of Ga2O3, In2O3 and Their Alloys in the Growth of Mist CVD
T. Yamaguchi; K. Tanuma; T. Kobayashi; H. Nagai; M. Sato; T. Onuma and T. Honda
4th International Conference on Advanced Electromaterials (ICAE2017), 24 Nov. 2017

XPS spectra of Ga2O3, In2O3 and their alloys fabricated by molecular precursor method
T. Honda; Y. Takahashi; T. Onuma; T. Yamaguchi; H. Nagai and M. Sato
24th International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 24), 24 Nov. 2017

Deep-UV emission properties of rocksalt-structured MgxZn1-xO Films Grown on MgO (001) Substrates
M. Ono; K. Ishii; T. Uchida; R. Jinno; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita and T. Onuma
36th Electronic Materials Symposium, 09 Nov. 2017

Angle-resolved XPS spectra of InN/GaN grown by DERI method
Y. Nakajima; T. Onuma; T. Yamaguchi and T. Honda
36th Electronic Materials Symposium, 09 Nov. 2017

MSM-type solar-blind photodetector with alpha-Ga2O3 film grown by mist CVD
K. Rikitake; T. Kobayashi; T. Yamaguchi; T. Onuma and T. Honda
36th Electronic Materials Symposium, 08 Nov. 2017

Effect of low temperature buffer layer in mist CVD growth of In2O3 on alfa-Al2O3 substrate
T. Kobayashi; T. Yamaguchi; T. Onuma and T. Honda
36th Electronic Materials Symposium, 08 Nov. 2017

Near surface band bending in InN films grown by DERI method
Y. Nakajima; K. Uehara; T. Onuma; T. Yamaguchi and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Fabrication of Si micro-cup substrate and its application for integration of,μ-LEDs
R. Nawa; T. Onuma; T. Yamaguchi and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Origin of free holes and visible light absorption in p-type NiO films
M. Ono; T. Onuma; K. Sasaki; H. Nagai; T. Yamaguchi; M. Higashiwaki; A. Kuramata; S. Yamakoshi; M. Sato and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Bandgap Engineering of α-Ga2O3 Films Grown by Mist Chemical Vapor,Deposition
K. Rikitake; T. Yamaguchi; T. Onuma and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Fabrication of TFT using amorphous In2O3 thin film by mist CVD
T. Kobayashi; K. Sawamoto; S. Aikawa; T. Yamaguchi; T. Onuma; and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Formation of Black Matrix for Realization of Micro-LED Display
Y. Chunobayashi; R. Nawa; Y. Takahashi; H. Matsuura; T. Yamaguchi; T. Onuma and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Unintentionally Doped Impurities in GaN Layer Grown by RF-MBE
D. Taka; T. Yamaguchi; T. Onuma and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Photothermal Deflection Spectra of Gallium indium nitride layers grown,by MOVPE
K. Fukuda; T. Onuma; L. Sang; T. Yamaguchi; T. Honda and M. Sumiya
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Impact of mask materials on dry etching of GaN using ICP-RIE
H. Matsuura; T. Onuma; T. Honda and T. Yamaguchi
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Near-the surface Fermi level measured In2O3 and Ga2O3 thin films by,molecular precursor method
Y. Takahashi; T. Onuma; H. Nagai; T. Yamaguchi and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Outstanding capability of In-situ Monitoring Techniques in RF-MBE Growth of InN and GaInN
T. Yamaguchi; T. Sasaki; M. Takahasi; T. Araki; T. Onuma; T. Honda and Y. Nanishi
2017 International Symposium on Novel and Sustainable Technology (ISNST2017), 19 Oct. 2017

GaN growth on Al template by MBE for the fabrication of micro displays
T. Honda; Y. Hoshikawa; K. Uehara; T. Onuma and T. Yamaguchi
11th International Symposium on Semiconductor Light Emitting Devices (ISSLED2017), 12 Oct. 2017

Compositional Pulling Effect in Epitaxial Growth of GaInN by RF-MBE
T. Yamaguchi; T. Sasaki; M. Takahasi; T. Araki; T. Onuma; T. Honda and Y. Nanishi
International Conference on Solid State Devices and Materials (SSDM2017), 21 Sep. 2017

Fabrication of MSM-Type Photodetector Using Sn-Doped alpha-Ga2O3 Films Grown by Mist Chemical Vapor Deposition
K. Rikitake; T. Yamaguchi; T. Onuma and T. Honda
International Conference on Solid State Devices and Materials (SSDM2017), 20 Sep. 2017

Photoresponsivity of alpha-Ga2O3-based deep UV photodetector grown by mist CVD
K. Rikitake; T. Yamaguchi; T. Onuma and T. Honda
2nd International Workshop on Gallium Oxide and Related Materials, 14 Sep. 2017

Cathodoluminescence spectra of Si-doped and Si-implanted β-Ga2O3 single crystals
T. Onuma; K. Sasaki; T. Masui; T. Yamaguchi; T. Honda; A. Kuramata and M. Higashiwaki
2nd International Workshop on Gallium Oxide and Related Materials, 14 Sep. 2017

低温In2O3バッファ層を用いたa-Al2O3基板上In2O3のミストCVD成長
08 Sep. 2017

Ga2-xSnxO膜のミストCVD成長
08 Sep. 2017

シリコンマイクロカップ基板の製作とµ-LEDの集積化の検討
08 Sep. 2017

GaN上およびInN上GaInN成長における成長初期過程の観察
07 Sep. 2017

SiドープとSiイオン注入単結晶酸化ガリウム結晶の光学的特性
07 Sep. 2017

光熱偏向分光法によるGa1-xInxN薄膜の評価
06 Sep. 2017

ミストCVD法によるSn添加Ga2O3成長とそのデバイス応用
09 Aug. 2017

ミストCVD法によるIn2O3薄膜の結晶構造制御
09 Aug. 2017

第一原理計算とX線光電子分光法によるp形NiO薄膜の電子構造の解析
09 Aug. 2017

赤色LEDに向けたDERI法によるGaInN薄膜のRF-MBE成長検討
09 Aug. 2017

RF-MBE法により成長したGaN薄膜中の不純物に関する考察
09 Aug. 2017

分子プレカーサー法により形成した金属酸化物薄膜の表面近傍フェルミ準位の測定
09 Aug. 2017

光熱偏向分光法を用いたGa1-xInxN薄膜における非発光再結合の検討
09 Aug. 2017

RF-MBE法を用いたDERI法によるInN薄膜成長における極性が与える影響
09 Aug. 2017

素子分離のためのICP-RIEによるエッチング垂直性の検討
09 Aug. 2017

ICP-RIEによるGaNテンプレートのアレイエッチングの製作検討
09 Aug. 2017

In-situ X-ray Reciprocal Space Mapping Measurements in GaInN growth on GaN and InN by RF-MBE
T. Yamaguchi; T. Sasaki; M. Takahasi; T. Onuma; T. Honda and Y. Nanishi
12th International Conference On Nitride Semiconductors (ICNS-12), 26 Jul. 2017

Optical Properties of Ga2O3 Films and Crystals
T. Onuma; S. Saito; K. Sasaki; K. Goto; T. Masui; T. Yamaguchi; T. Honda; A. Kuramata and M. Higashiwaki
Compund Semiconductor Week 2017 (CSW 2017), 14 May 2017

Relation between electrical and optical properties of p-type NiO films
M. Ono; T. Onuma; R. Goto; K. Sasaki; H. Nagai; T. Yamaguchi; M. Higashiwaki; A. Kuramata; S. Yamakoshi; M. Sato and T. Honda
Compund Semiconductor Week 2017 (CSW 2017), 14 May 2017

Mist CVD growth of Sn-doped Ga2O3 thin films and its device application
K. Rikitake; T. Kobayashi; T. Yamaguchi; T. Onuma; T.Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’17 (LEDIA ’17), 20 Apr. 2017

Charge transfer transitions in p-type NiO films studied by optical measurements and X-ray photoelectron spectroscopy
M. Ono; T. Onuma; K. Sasaki; H. Nagai; T. Yamaguchi; M. Higashiwaki; A. Kuramata; S. Yamakoshi; M. Sato; T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’17 (LEDIA ’17), 20 Apr. 2017

Comparison of III-polar and N-polar GaInN films grown by RF-MBE
Y. Nakajima; K. Uehara; T. Honda; T. Yamaguchi; T. Onuma
International Conference on Light-Emitting Devices and Thier Industrial Applications ’17 (LEDIA ’17), 20 Apr. 2017

Fabrication of µ-LED array structures using ICP dry-etching
R. Nawa; T. Onuma; T. Yamaguchi; J. -S. Jang; T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’17 (LEDIA ’17), 20 Apr. 2017

単斜晶酸化ガリウム結晶における光学遷移過程
15 Mar. 2017

p形NiO薄膜における電気的特性と光学的特性の関係
14 Mar. 2017

beta-Ga2O3結晶における光学的異方性の解析
13 Jan. 2017

(0001)alpha-Al2O3基板上へのGa2-xSnxO3薄膜のミストCVD成長
03 Dec. 2016

ミストCVD法を用いたNiO結晶成長
03 Dec. 2016

ミストCVD法を用いたCu3N成長
03 Dec. 2016

Growth and characterization of In2O3 on various substrates by mist CVD
T. Kobayashi; K. Tanuma; T. Yamaguchi; T. Onuma; T. Honda
2016 Materials Research Society Fall Meeting & Exhibit(2016 MRS Fall Meeting), 30 Nov. 2016

Demonstration of monolithic GaN Based UV MOS-LEDs for Flat-Panel Display
H. Matsuura; K. Serizawa; T. Onuma; T. Yamaguchi; T. Honda
The 15th International Symposium on Advanced Technology (ISAT-15), 10 Nov. 2016

Fabrication of CNT-doped Ga2O3 Thin Films by Molecular Precursor Method
Y. Takahashi; T. Onuma; H. Nagai; T. Yamaguchi; M. Sato; T. Honda
The 15th International Symposium on Advanced Technology (ISAT-15), 10 Nov. 2016

Growth and characterization of bixbite-type In2O3 thin films by mist CVD
T. Kobayashi; K. Tanuma; T. Yamaguchi; T. Onuma; T. Honda
The 15th International Symposium on Advanced Technology (ISAT-15), 10 Nov. 2016

Characterization of GaN layers grown on Al templates by RF-MBE
K. Uehara; Y. Hoshikawa; T. Yamaguchi; T. Onuma; T. Honda
The 15th International Symposium on Advanced Technology (ISAT-15), 10 Nov. 2016

Toward the Growth of Cu3N by mist CVD
M. Takahashi; H. Ito; T. Yamaguchi; H. Nagai; T. Onuma; M. Sato; T. Honda
The 15th International Symposium on Advanced Technology (ISAT-15), 10 Nov. 2016

In-situ monitoring in RF-MBE growth of In-based nitrides
T. Yamaguchi; T. Sasaki; M. Takahasi; T. Araki; T. Onuma; T. Honda; Y. Nanishi
The 15th International Symposium on Advanced Technology (ISAT-15), 10 Nov. 2016

Temperature-Dependent Cathodoluminescence Spectra of Rocksalt MgxZn1-xO films grown by Mist Chemical Vapor Deposition Method
T. Onuma; K. Tsumura; K. Kaneko; R. Nawa; M. Ono; T. Uchida; R. Jinno; T. Yamaguchi; S. Fujita; T. Honda
The 9th International Workshop on ZnO and Related Materials (IWZnO2016), 31 Oct. 2016

Study on Mist CVD Growth of In2O3
T. Yamaguchi; T. Kobayashi; K. Tanuma; H. Nagai; T. Onuma; M. Sato; T. Honda
2016 international Symposium on Novel and Sustainable Technology (2016ISNST), 06 Oct. 2016

Surface and Bulk Electronic Structures of Heavily Mg-Doped InN Epilayer by Hard X-Ray Photoelectron Spectroscopy
M. Imura; S. Tsuda; T. Nagata; A. Yang; Y. Yamashita; H. Yoshikawa; Y. Koide; K. Kobayashi; T. Yamaguchi; M. Kaneko; N. Uematsu; K. Wang; T. Araki; Y. Nanishi
International Workshop on Nitride Semiconductors (IWN 2016), 04 Oct. 2016

Fabrication of Vertical-Injection Type GaN-Based MIS Diodes with Near UV Transparent Oxide Electrodes
T. Honda; S. Fujioka; T. Onuma; T. Yamaguchi; H. Nagai; M. Sato
International Workshop on Nitride Semiconductors (IWN 2016), 02 Oct. 2016

RF-MBE Growth of InGaN Ternary Alloys Using in-situ Monitoring Techniques
T. Yamaguchi; T. Sasaki; M. Takahasi; T. Araki; T. Onuma; T. Honda; Y. Nanishi
2016 International Conference on Solid State Devices and Materials (SSDM2016), 28 Sep. 2016

Impact of buffer layer thickness and annealing time for the optical and structural properties of GaN epilayers grown on sapphire substrate
H. Matsuura; L. Sang; M. Sumiya; T.Yamaguchi; T. Honda
European Materials Research Society, 2016 Fall Meeting (2016 E-MRS), 20 Sep. 2016

Deep-ultraviolet luminescence in rocksalt-structured Mg1-xZnxO thin films on MgO substrates
K. Kaneko; K. Tsumura; T. Onuma; T. Uchida; R. Jinno; T. Yamaguchi; T. Honda; S. Fujita
European Materials Research Society, 2016 Fall Meeting (2016 E-MRS), 19 Sep. 2016

β-Ga2O3薄膜と単結晶の光学定数の比較
16 Sep. 2016

RF-MBE法による低温GaN緩衝層を挿入したAl薄膜上GaN成長検討
16 Sep. 2016

岩塩構造Mg1−xZnxO薄膜の深紫外発光
15 Sep. 2016

Observation of exciton-LO-phonon interaction in β-Ga2O3 single crystals
T. Onuma; S. Saito; K. Sasaki; K. Goto; T. Masui; T. Yamaguchi; T. Honda; A. Kuramata; M. Higashiwaki
German-Japanese Gallium Oxide Technology Meeting 2016 (GJGOTM2016), 07 Sep. 2016

Impact of GaN low-temperature buffer layer on GaN growth on Al templates
Y. Hoshikawa; Y. Suzuki; K. Uehara; T. Onuma; T. Yamaguchi; T. Honda
19th International Conference on Molecular Beam Epitaxy (ICMBE 2016), 04 Sep. 2016

Mist-CVD-Grown Crystalline In2O3 Thin-Film Transistors with Low Off-State Current
S. Aikawa; K. Tanuma; T. Kobayashi; T. Yamaguchi; T. Onuma; T. Honda
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), 11 Aug. 2016

プラズマ生成条件を考慮したRF-MBE法によるAlInN薄膜成長
09 Aug. 2016

分子プレカーサー法を用いたMgO添加GIO薄膜製作検討
09 Aug. 2016

MOVPE法で成長したGaN薄膜におけるバッファ層堆積後の昇温時間とバッファ層膜厚の影響
09 Aug. 2016

RF-MBE法を用いたAl薄膜上GaN成長における低温GaNバッファ層挿入の影響
09 Aug. 2016

銀分散亜鉛薄膜によるプラズモン共鳴放出
09 Aug. 2016

ミストCVD法を用いたCu2O薄膜成長
09 Aug. 2016

Mist CVD法によるIn2O3薄膜の結晶成長
09 Aug. 2016

Strain Relaxation Analysis Using In-situ X-ray Reciprocal Space Mapping Measurements in RF-MBE Growth of GaInN
T. Yamaguchi; T. Sasaki; M. Takahasi; T. Onuma; T. Honda; Y. Nanishi
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), 09 Aug. 2016

Rock salt型MgZnO薄膜の成長とその深紫外発光特性
30 Jul. 2016

Deep-ultraviolet luminescence in rocksalt- structured Mg1-xZnxO thin films
K. Kaneko; K. Tsumura; T. Onuma; T. Uchida; R. Jinno; T. Yamaguchi; T. Honda; S. Fujita
35th Electronic Materials Symposium (EMS-35), 08 Jul. 2016

Mist CVD growth of In2O3 on various substrates
T. Kobayashi; K. Tanuma; T. Yamaguchi; T. Onuma; T. Honda
35th Electronic Materials Symposium (EMS-35), 08 Jul. 2016

Effects of GaN low-temperature buffer layer on GaN surface flatness grown on Al templates
Y. Hoshikawa; Y. Suzuki; K. Uehara; T. Onuma; T. Yamaguchi; T. Honda
35th Electronic Materials Symposium (EMS-35), 07 Jul. 2016

Surface plasmon resonant emission from Ag dispersed ZnO films fabricated by molecular precursor method
D. Taka; T. Onuma; T. Shibukawa; H. Nagai; T. Yamaguchi; J.-S. Jang; M. Sato; T. Honda
The 43rd International Symposium on Compound Semiconductors (ISCS 2016), 26 Jun. 2016

Anisotropic optical constants in b-Ga2O3 single crystal
T. Onuma; S. Saito; K. Sasaki; T. Masui; T. Yamaguchi; T. Honda; A. Kuramata; M. Higashiwaki
58th Electronic Materials Conference (EMC-58), 22 Jun. 2016

Mist CVD growth of In2O3 films on (0001)alfa-Al2O3 substrates and (0001)GaN templates
T. Kobayashi; K. Tanuma; T. Yamaguchi; T. Onuma and T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’16 (LEDIA ’16), 19 May 2016

Optical properties of ZnO films dispersed with Ag nanocrystals fabricated by molecular precursor method
D. Taka; T. Onuma; T. Shibukawa; H. Nagai; T. Yamaguchi; J.-S. Jang; M. Sato; T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’16 (LEDIA ’16), 19 May 2016

(0001)alpha-Al2O3基板上および(0001)GaNテンプレート上へのIn2O3膜のミストCVD成長
19 Mar. 2016

分子プレカーサー法を用いたIn-Ga-Mg-O薄膜製作検討
19 Mar. 2016

分子プレカーサー法で製作した銀分散ZnO薄膜の光学的特性
19 Mar. 2016

beta-Ga2O3結晶における励起子-LOフォノン相互作用
19 Mar. 2016

Dislocation Passivation by Positive Usage of Phase Separation During InGaN Growth by DERI Method
Y. Nanishi; T. Yamaguchi and T. Araki
The Collaborative Conference on Crystal Growth 2015 (3CG 2015), 15 Dec. 2015

Epitaxial growth of GaInN by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
T. Yamaguchi; T. Honda; T. Onuma; T. Sasaki; M. Takahasi; T. Araki and Y. Nanishi
第25回日本MRS年次大会, 09 Dec. 2015

Study of nitridation conditions of Al layer for GaN growth by RF-MBE", Materials Research Society
Y. Hoshikawa; T. Onuma; T. Yamaguchi and T. Honda
2015 Materials Research Society Fall Meeting & Exhibit(2015 MRS Fall Meeting), 03 Dec. 2015

Growth temperature dependence of Ga2O3 and In2O3 growth rates in Mist CVD
K. Tanuma; T. Yamaguchi; T. Onuma and T. Honda
2015 Materials Research Society Fall Meeting & Exhibit(2015 MRS Fall Meeting), 02 Dec. 2015

Technical issues of GaInN growth with high indium composition for LEDs
T. Honda; T. Yamaguchi and T. Onuma
The Collaborative Conference on Crystal Growth 2015 (3CG 2015), Dec. 2015

Valence band structure of monoclinic gallium oxide studied by polarized optical measurements
T. Onuma; S. Saito; K. Sasaki; K. Goto; T. Masui; T. Yamaguchi; T. Honda and M. Higashiwaki
The Collaborative Conference on Crystal Growth 2015 (3CG 2015), Dec. 2015

Dislocation Passivation by Positive Usage of Phase Separation During RF-MBE Growth of InGaN
Y. Nanishi; T. Yamaguchi and T. Araki
The 3rd International Conference on Advanced Electromaterials (ICAE2015), 18 Nov. 2015

Defect characterization in GaInN on compressive and strain-free GaN underlying layer
N. Toyomitsu; Y. Harada; J. Wang; L. Sang; T. Yamaguchi; T. Honda; Y. Nakano; and M. Sumiya
6th International Symposium on Growth of III-Nitrides (ISGN-6), 11 Nov. 2015

Impact of nitridation on GaN growth on (0001)sapphire with an Al layer as a release layer by RF-MBE
Y. Hoshikawa; S. Osawa; Y. Matsumoto; T. Onuma; T. Yamaguchi and T. Honda
6th International Symposium on Growth of III-Nitrides (ISGN-6), 10 Nov. 2015

パルスインジェクショ法を用いたCu2O結晶成長
07 Nov. 2015

Al薄膜上GaN成長における低温GaN緩衝層挿入の影響
07 Nov. 2015

Optical Anisotropy in (010) Plane of beta-Ga2O3 Single Crystals
T. Onuma; S. Saito; K. Sasaki; K. Goto; T. Masui; T. Yamaguchi; T. Honda and M. Higashiwaki
1st International Workshop on Gallium Oxide and Related Materials, 06 Nov. 2015

Growth of α-(AlGa)2O3 by mist CVD and evaluation of its thermal stability
M. Takahashi; T. Hatakeyama; T. Onuma; T. Yamaguchi and T. Honda
1st International Workshop on Gallium Oxide and Related Materials, 04 Nov. 2015

Growth temperature dependence of Ga2O3 growth rate by mist CVD
K. Tanuma; T. Onuma; T. Yamaguchi and T. Honda
1st International Workshop on Gallium Oxide and Related Materials, 04 Nov. 2015

Fabrication of p-type NiO thin films by molecular precursor method
R. Goto; T. Onuma; T. Yamaguchi; H. Nagai; M. Sato and T. Honda
1st International Workshop on Gallium Oxide and Related Materials, 04 Nov. 2015

Impact of nitridation on GaN growth on sapphire with an Al layer as a sacrifice layer by RF-MBE
Y. Hoshikawa; S. Osawa; Y. Matsumoto; T. Onuma; T. Yamaguchi and T. Honda
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

AR-XPS measurement of AlOx/AlN/GaN heterostructures
D. Isono; S. Takahashi; Y. Sugiura; T. Onuma; T. Yamaguchi and T. Honda
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

Discussion of ZnO based film by mist CVD method using molecular precursor solution
R. Goto; K. Tanuma; T. Hatakeyama; H. Nagai; T. Yamaguchi; M. Sato and T. Honda
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

Correlation between green fluorescent emission and pits formed on surface of GaInN films
N. Toyomitsu; Y. Harada; J. Wang; L. Sang; T. Yamaguchi; T. Honda; Y. Nakano and M. Sumiya
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

Comprehensive study on GaN and InN etching by inductively coupled plasma reactive ion etching
K. Narutani; T. Yamaguchi; T. Araki; Y. Nanishi; T. Onuma and T. Honda
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

Fundamental Study on Local Surface Plasmons in Ag-nanocrystallites ZnO films toward Future Applications in Nitride-based LEDs
D. Taka; T. Onuma; T. Shibukawa; H. Nagai; T. Yamaguchi; M. Sato and T. Honda
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

Mist-CVD Growth of In2O3
T. Kobayashi; K. Tanuma; T. Yamaguchi; T. Onuma and T. Honda
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

Study on the Phase Transition Temperature of α-(AlGa)2O3 Grown by Mist CVD
M. Takahashi; T. Hayakeyama; T. Onuma; T. Yamaguchi and T. Honda
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

ICP-RIEによるGaN,GaInN,InNエッチングとGaInN系LED製作への応用
29 Oct. 2015

In-situ X-ray Reciprocal Space Mapping Measurements in GaInN Growth on GaN by RF-MBE
T. Yamaguchi; T. Sasaki; K. Narutani; M. Sawada; R. Deki; T. Onuma; T. Honda; M. Takahasi and Y. Nanishi
The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015), 07 Oct. 2015

Comprehensive study on inductively coupled plasma reactive ion etching of GaN and InN
K. Narutani; T. Yamaguchi; T. Araki; Y. Nanishi; T. Onuma and T. Honda
The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015), 07 Oct. 2015

Thermal stability of α-(AlGa)2O3 grown by mist CVD
M. Takahashi,T. Hatakeyama,T. Onuma,T. Yamaguchiand T. Honda
The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015), 07 Oct. 2015

β-Ga2O3結晶の(010)面における光学的異方性
15 Sep. 2015

MgZnO growth on (0001)sapphire by mist chemical vapor deposition
R. Goto; H. Nagai; T. Yamaguchi; T. Onuma; M. Sato and T. Honda
17th International Conference on II-VI Compounds and Related Materials, 14 Sep. 2015

RF-MBE法によるGaN上GaInN成長におけるその場X線逆格子マッピング測定
14 Sep. 2015

ミストCVD法により製作したα-(AlGa)2O3の熱的安定性
13 Sep. 2015

α-Ga2O3 and α-(AlGa)2O3 Buffer Layers in Growth of GaN
T. Yamaguchi; T. Hatakeyama; K. Tanuma; T. Hirasaki; H. Murakami; T. Onuma and T. Honda
11th International Conference On Nitride Semiconductors (ICNS-11), 01 Sep. 2015

Correlation between Deep-level Optical Spectroscopy and Cathodoluminescence on Pits Formed on Surface of GaInN Films
N. Toyomitsu; Y. Harada; J. Wang; L. Sang; T. Sekiguchi; T. Yamaguchi; T. Honda; Y. Nakano and M.Sumiya
11th International Conference On Nitride Semiconductors (ICNS-11), 01 Sep. 2015

Fabrication of (Ga, In)2O3-x films on GaN-based LED structures by molecular precursor method for near-UV transparent electrodes
T. Honda; H. Nagai; S. Fujioka; R. Goto; T. Onuma; T. Yamaguchi and M.Sato
The 22nd International SPACC (The Society of Pure and Applied Coordination Chemistry) Symposium (SPACC22), 14 Aug. 2015

Fabrication of copper thin films using the molecular precursor method
H. Nagai; T. Yamaguchi; T. Onuma; I. Takano; T. Honda and M. Sato
The 22nd International SPACC (The Society of Pure and Applied Coordination Chemistry) Symposium (SPACC22), 14 Aug. 2015

Study on spontaneous emission in nitride-based LEDs with Ag-nanocrystallites ZnO films fabricated by molecular precursor method
T. Onuma; T. Shibukawa; D. Taka; K. Serizawa; E. Adachi; H. Nagai; T. Yamaguchi; J.-S. Jang; M. Sato and T. Honda
The 22nd International SPACC (The Society of Pure and Applied Coordination Chemistry) Symposium (SPACC22), 14 Aug. 2015

Growth of Group-III Oxides by Mist Chemical Vapor Deposition and Discussion on Thier Growth Mechanisms
T. Yamaguchi; K. Tanuma; H. Nagai; T. Onuma; T. Honda and M. Sato
The 22nd International SPACC (The Society of Pure and Applied Coordination Chemistry) Symposium (SPACC22), 14 Aug. 2015

分子プレカーサー水溶液を用いたミスト化学気相成長による酸化亜鉛薄膜製作
09 Aug. 2015

ミストCVD法により製作したa-(AlGa)2O3の熱的安定性
09 Aug. 2015

ICP-RIEによるInNおよびGaN温度依存性エッチング
09 Aug. 2015

RF-MBE法によるSapphire基板上Al犠牲層の窒化処理によるGaN成長の影響
09 Aug. 2015

ミストCVD法を用いたGa2O3成長における成長速度の温度依存性
09 Aug. 2015

RF-MBE法を用いたSapphire基板上GaN成長
09 Aug. 2015

RF-MBE法によるGaN上GaInN成長におけるその場X線逆格子マッピング測定
08 Aug. 2015

AR-XPS法を用いたAlOx/AlN/GaN構造のバンド構造解析
08 Aug. 2015

MOCVD法を用いて成長したGaInN薄膜の欠陥評価
08 Aug. 2015

Inductively coupled plasma reactive ion etching of GaN and InN
K. Narutani; T. Yamaguchi; T. Araki; Y. Nanishi; T. Onuma and T. Honda
34th Electronic Materials Symposium (EMS-34), 16 Jul. 2015

Growth condition dependence of Ga-In-O films by mist-CVD
K. Tanuma; R. Goto; T. Onuma; T. Yamaguchi and T. Honda
34th Electronic Materials Symposium (EMS-34), 15 Jul. 2015

vate Dislocations by Positive Usage of Phase Separation in InGaN
Y. Nanishi; T. Yamaguchi and T. Araki
Workshop on Frontier Photonic and Electronic Materials and Devices, 14 Jul. 2015

The Role of Impurities in Raman Scattering of InN: from Thin Films to Nanowires
N. Domènech-Amador; R. Cuscó; R. Calarco; T. Yamaguchi; Y. Nanishi and L.Artús
Compound Semiconductor Week 2015, 29 Jun. 2015

Determination of Direct and Indirect Bandgap-Energies of b-Ga2O3 by Polarized Transmittance and Reflectance Spectroscopy
T. Onuma; S. Saito; K. Sasaki; T. Masui; T. Yamaguchi; T. Honda and M. Higashiwaki
57th Electronic Materials Conference (EMC-57), 24 Jun. 2015

Photoelectron spectra of AlN/GaN heterostructure observed by AR-XPS
D. Isono; S. Takahashi; Y. Sugiura; T. Yamaguchi and T. Honda
The 7th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2015), 18 May 2015

Correlation between green fluorescence and impurities on pits formed on surface of InGaN
N. Toyomitsu; Y. Harada; J. Wang; L. Sang; T. Sekiguchi; T. Yamaguchi; T. Honda; Y. Nakano and M. Sumiya
The 5th Asia-Arab Sustainable Energy Forum & 7th Int. Workshop on SSB (5AASEF), 12 May 2015

Growth mechanisms of InN and its alloys using droplet elimination by radical beam irradiation
T. Yamaguchi; T. Araki; T. Onuma; T. Honda and Y. Nanishi
EMN droplet, 09 May 2015

誘導結合型プラズマ反応性イオンエッチングによるInN エッチング
07 May 2015

光デバイス用GaInN結晶のXPS測定評価
30 Apr. 2015

MBE成長InGaN受光・発光素子の現状と展望
30 Apr. 2015

酸化物/窒化物構造の成長プロセスと光物性
30 Apr. 2015

Fundamental study on growth of α-(AlGa)2O3 alloys by mist CVD-A study on growth rate of α-Al2O3 compared with α-Ga2O3
M. Takahashi; T. Hatakeyama; T. Onuma; T. Yamaguchi and T. Honda
The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'15), 23 Apr. 2015

Aluminum growth on sapphire substrate with surface nitridation by RF-MBE
Y. Hoshikawa; S. Osawa; Y. Matsumoto; T. Yamaguchi; T. Onuma and T. Honda
The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'15), 23 Apr. 2015

Optical Anisotropy in beta-Ga2O3 Crystals Grown by Melt-Growth Methods
T. Onuma; S. Saito; K. Sasaki; T. Masui; T. Yamaguchi; T. Honda and M. Higashiwaki
The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'15), 23 Apr. 2015

窒化ガリウム系発光ダイオードにおける「グリーンギャップ」問題
17 Mar. 2015

分子プレカーサー水溶液を用いたミストCVD法によるZnO薄膜製作
14 Mar. 2015

ミストCVDによるalpha-(AlGa)2O3混晶成長の基礎検討 ―alpha-Ga2O3と比較したalpha-Al2O3の成長速度の検討―
13 Mar. 2015

Ga-In-O薄膜のウェットエッチングプロセス検討
13 Mar. 2015

InGaN薄膜表面に形成されたピットのCLと不純物との相関
12 Mar. 2015

RF-MBE法による窒化サファイア基板上アルミニウム薄膜成長
12 Mar. 2015

beta-Ga2O3結晶の透過と反射スペクトルの偏光依存性
12 Mar. 2015

Growth and doping of In-based nitride semiconductors using DERI method
T. Yamaguchi; T. Araki; T. Onuma; T. Honda and Y. Nanishi (招待講演)
The 2015 Materials Challenges in Alternative and Renewable Energy Conference (MCARE 2015), 25 Feb. 2015

Progress in InGaN Growth by RF-MBE and Development to Optical Device Fabrication
T. Yamaguchi; T. Araki; T. Onuma; T. Honda and Y. Nanishi (招待講演)
SPIE Photonic West, 09 Feb. 2015

Fabrication of alpha-(AlGa)2O3 on sapphire substrate by mist CVD
T. Hatakeyama; K. Tanuma; S. Osawa; Y. Sugiura; T. Onuma T. Hirasaki; H. Murakami; T. Yamaguchi and T. Honda
10th International Symposium on Semiconductor Light Emitting Devices (ISSLED2014), 16 Dec. 2014

Cathode luminescence at 520 nm related on fluorescence green emission from pits formed on surface of GaInN films
N. Toyomitsu; L. Sang; Wang Jianyu; T. Yamaguchi; T. Honda and M. Sumiya
10th International Symposium on Semiconductor Light Emitting Devices (ISSLED2014), 15 Dec. 2014

Properties of near-UV transparent Ga-In-O electrode in GaN-based MOS-LED
S. Fujioka; T. Yasuno; T. Onuma; H. Nagai; T. Yamaguchi; M. Sato and T. Honda
10th International Symposium on Semiconductor Light Emitting Devices (ISSLED2014), 15 Dec. 2014

AR-XPS spectra and band-bending properties of +c, -c and m-GaN surfaces
D. Isono; S. Fujioka; Y. Sugiura; T. Onuma; T. Yamaguchi and T. Honda
2014 Materials Research Society Fall Meeting & Exhibit(2014 MRS Fall Meeting), 02 Dec. 2014

Raman scattering study of -Ga2O3 single-crystal films grown by mist CVD
L. Artus; N. Domenech-Amador; R. Cusco; T. Hatakeyama; T. Yamaguchi and T. Honda
2014 Materials Research Society Fall Meeting & Exhibit(2014 MRS Fall Meeting), 01 Dec. 2014

New Approach to Fabricate Green, Red and IR Light Sources Based on Nitride Semiconductors by DERI Method
Y. Nanishi; T. Yamaguchi and T. Araki (招待講演)
31st International Korea-Japan Seminar on Ceramics, 27 Nov. 2014

Growth and characterization of Ga-In-O by mist CVD
K. Tanuma; T. Hatakeyama; R. Goto; T. Onuma; T. Yamaguchi and T. Honda
The 13th International Symposium on Advanced Technology (ISAT-13), 14 Nov. 2014

Growth of oxide thin films by mist chemical vapor deposition -Application of corundum-structured oxides for growth of GaN-
T. Hatakeyama; K. Tanuma; S. Osawa; Y. Sugiura; T. Onuma; T. Yamaguchi and T. Honda
The 13th International Symposium on Advanced Technology (ISAT-13), 14 Nov. 2014

下地GaN層の歪の異なるGaInN薄膜表面ピット形成と蛍光特性
13 Nov. 2014

六方晶GaN中に挿入した一分子層InNの構造完全性による影響
13 Nov. 2014

RF-MBE Growth of InGaN Alloys and Fabrication of Optical Device Structures
T. Yamaguchi; T. Araki; T. Onuma; T. Honda and Y. Nanishi (招待講演)
The Collaborative Conference on Crystal Growth (3CG), 05 Nov. 2014

Influence of Surface Oxides for Band Bending of N-Type GaN
Y. Sugiura; D. Isono; T. Yamaguchi and T. Honda
The 1st Innovation Forum of Advanced Engineering and Education (IFAEE-1), 02 Nov. 2014

Mist chemical vapor deposition growth of alpha-(AlGa)2O3
T. Hatakeyama; K. Tanuma; S. Osawa; Y. Sugiura; T. Onuma T. Hirasaki; H. Murakami; T. Yamaguchi and T. Honda
The 1st Innovation Forum of Advanced Engineering and Education (IFAEE-1), 02 Nov. 2014

Characterization of fluorescence emission of GaInN films
N. Toyomitsu; L. Sang; T. Yamaguchi; T. Honda and M. Sumiya
The 1st Innovation Forum of Advanced Engineering and Education (IFAEE-1), 02 Nov. 2014

Characterization of GaN thin film grown on pseudo Al template by radio-frequency plasma-assisted molecular beam epitaxy
Y. Watanabe; S. Osawa; D. Tajimi; T. Hatakeyama; T. Yamaguchi and T. Honda
The 1st Innovation Forum of Advanced Engineering and Education (IFAEE-1), 02 Nov. 2014

Thickness Dependence of Pseudo Aluminum Templates in Growth of GaN by RF-MBE
S. Osawa; T. Onuma; T. Yamaguchi and T. Honda
The 1st Innovation Forum of Advanced Engineering and Education (IFAEE-1), 02 Nov. 2014

Fabrication of ZnO thin film by molecular precursor method
R. Goto; H. Nagai; T. Yamaguchi; M. Sato and T. Honda
The 1st Innovation Forum of Advanced Engineering and Education (IFAEE-1), 02 Nov. 2014

Mist Chemical Vapor Deposition Growth of Ga-In-O films
K. Tanuma; T. Hatakeyama; R. Goto; T. Onuma; T. Yamaguchi and T. Honda
The 1st Innovation Forum of Advanced Engineering and Education (IFAEE-1), 02 Nov. 2014

X-ray photoelectron spectroscopy of C+, C- and M-GaN surfaces
D. Isono; Y. Sugiura; T. Yamaguchi; T. Honda
The 1st Innovation Forum of Advanced Engineering and Education (IFAEE-1), 02 Nov. 2014

Mist Chemical Vapor Deposition Growth of Group-III Oxides And Its Growth Mechanism
T. Yamaguchi; T. Hatakeyama; K. Tanuma; M. Sugimoto; H. Nagai; T. Onuma; M. Sato and T. Honda (招待講演)
The 21st International SPACC (The Society of Pure and Applied Coordination Chemistry) Symposium (SPACC21), 01 Nov. 2014

Optical characterization of gallium-indium-oxide wide bandgap semiconductors for future device applications
T. Onuma; C. Mochizuki; H. Nagai; T. Yamaguchi; M. Sato; T. Honda (招待講演)
The 21st International SPACC (The Society of Pure and Applied Coordination Chemistry) Symposium (SPACC21), 01 Nov. 2014

Ga2O3基板の光学的特性評価
26 Sep. 2014

Growth of InGaN Alloys using DERI Method and Fabrication of LED structures
T. Yamaguchi; T. Araki; T. Onuma; T. Honda and Y. Nanishi (招待講演)
Energy Materials Nanotechnology open access week (EMN open access week), 24 Sep. 2014

AlOx/AlN/GaNヘテロ構造の発光特性
20 Sep. 2014

RF-MBE 法を用いたGaN 成長が疑似Al 基板に与える影響
19 Sep. 2014

疑似Al基板上GaN薄膜のフォトルミネッセンス評価
19 Sep. 2014

n-GaN結晶のXPSスペクトルにおける内殻準位ピーク非対称性の検討
19 Sep. 2014

Mist CVD法を用いて製作した-Al2O3基板上Ga-In-O薄膜の評価
18 Sep. 2014

Growth of pn-GaInN structures by RF-MBE and fabrication of homojunction-type light emitting diodes
K. Narutani; T. Yamaguchi; K. Wang; T. Araki; Y. Nanishi; L. Sang; M. Sumiya; S. Fujioka; T. Onuma; T. Honda
18th International Conference on Molecular Beam Epitaxy (ICMBE 2014), 11 Sep. 2014

Growth of alpha-Ga2O3 on alpha-Al2O3 substrate by mist CVD and growth of GaN on alpha-Ga2O3 buffer layer by RF-MBE
T. Yamaguchi; T. Hatakeyama; D. Tajimi; T. Onuma and T. Honda
18th International Conference on Molecular Beam Epitaxy (ICMBE 2014), 11 Sep. 2014

Pressure Dependence of the Refractive Index in Wurtzite and Rocksalt InN
R. Oliva; J. Ibañez; A. Segura; T. Yamaguchi; Y. Nanishi and L. Artus
52th European High Pressure Research Group International Meeting, 09 Sep. 2014

Kelvin force microscopic study on GaN layers grown on (111)Al templates by RF-MBE
T. Honda; T. Yamaguchi; Y. Sugiura; D. Isono; Y. Watanabe; S. Osawa; D. Tajimi; T. Iwabuchi; S. Kuboya; T. Tanikawa; R. Katayama and T. Matsuoka
18th International Conference on Molecular Beam Epitaxy (ICMBE 2014), 09 Sep. 2014

RF-MBE Growth of InN and InGaN Ternary Alloys Using DERI
T. Araki; T. Yamaguchi and Y. Nanishi (招待講演)
19th International Conference on Ternary and Multinary Compounds (ICTMC-19), 05 Sep. 2014

光デバイス応用に向けたＩｎ系窒化物半導体MBE成長～DERI法の紹介と様々な応用展開～
05 Sep. 2014

Thickness Dependence of Pseudo Aluminum Templates in Growth of GaN by RF-MBE
S. Osawa; T. Onuma; T. Yamaguchi and T. Honda
The International Workshop on Nitride Semiconductors 2014 (IWN2014), 26 Aug. 2014

Study on structure perfection of one-monolayer thick InN in hexagonal GaN using XRD techniques
N. Watanabe; D. Tajimi; N. Hashimoto; K. Kusakabe; K. Wang; T. Yamaguchi; A. Yoshikawa and T. Honda
The International Workshop on Nitride Semiconductors 2014 (IWN2014), 26 Aug. 2014

Optical properties of GaInN p-n homojunction blue-green light-emitting-diodes
T. Onuma; K. Narutani; S. Fujioka; T. Yamaguchi; K. Wang; T. Araki; Y. Nanishi; L. Sang; M. Sumiya and T. Honda (招待講演)
International Union of Materials Research Societies, International Conference in Asia 2014 (IUMRS-ICA 2014), 25 Aug. 2014

GaN層のケミカルリフトオフに向けたAlの膜厚検討
10 Aug. 2014

GaInNからの蛍光発光と結晶性との相関
10 Aug. 2014

厚膜GaInN成長とホモ接合型青緑LEDsの製作
10 Aug. 2014

Mist CVD法を用いて成長したalpha-Al2O3基板上Ga-In-O薄膜の評価
10 Aug. 2014

n-GaN結晶のXPSにおける内部電界強度とピーク非対称性の検討
10 Aug. 2014

分子プレカーサー法によるZnO薄膜製作のための熱処理温度検討
10 Aug. 2014

in-situ RF-MBE法を用いたAlOx/AlN/GaNヘテロ構造の製作
10 Aug. 2014

Mist CVD法を用いた酸化物薄膜成長
09 Aug. 2014

GaN系MOS-LEDを用いたGa-In-O近紫外透明電極の評価
09 Aug. 2014

疑似Al基板上に成長したGaN薄膜の特性評価
09 Aug. 2014

RF-MBE growth of GaInN films using DERI method and fabrication of homojunction-type LED structures
T. Yamaguchi; K. Narutani; T. Onuma; T. Araki; T. Honda; Y. Nanishi(招待講演)
The 6th International Symposium on Functional Materials (ISFM 2014), 07 Aug. 2014

Plasma Induced Point Defects in InN During RF-MBE Growth and Those Reduction by DERI Method
Y. Nanishi; T. Yamaguchi; T. Araki; A. Uedono and T. Palacios
Defects in Semiconductors Gordon Research Conference, 05 Aug. 2014

RF-MBE 法によるGaInN 厚膜成長とpn ホモ接合型青緑色LED の製作
26 Jul. 2014

RF-MBE法を用いた膜厚の異なるAlテンプレート上GaN 成長
26 Jul. 2014

Recent Material Studies of III-Nitride Semiconductors for Next Generation Devices
Y. Nanishi; T. Yamaguchi and T. Araki (招待講演)
The Professor Harry C. Gatos Lecture and Prize/The Age of Silicon Symposium, 25 Jul. 2014

Impact of UV transparent Ga-In-O electrode in vertical-type GaN-based metal oxide semiconductor light-emitting diodes
S. Fujioka; T. Yasuno; A. Sato; T. Onuma; H. Nagai; T. Yamaguchi; M. Sato and T. Honda
33rd Electronic Materials Symposium (EMS-33), 11 Jul. 2014

Investigation of Ga-In-O films grown on alpha-Al2O3 substrates by Mist CVD
K. Tanuma; T. Hatakeyama; T. Onuma; T. Yamaguchi and T. Honda
33rd Electronic Materials Symposium (EMS-33), 10 Jul. 2014

Blue-green light emitting diodes using pn-GaInN homojunction-type structure
K. Narutani; T. Yamaguchi; K. Wang; T. Araki; Y. Nanishi; L. Sang; M. Sumiya; S. Fujioka; T. Onuma and T. Honda
33rd Electronic Materials Symposium (EMS-33), 10 Jul. 2014

Impact of perfection on one-monolayer thick InN in hexagonal GaN
N. Watanabe; D. Tajimi; T. Onuma; T. Yamaguchi and T. Honda
33rd Electronic Materials Symposium (EMS-33), 09 Jul. 2014

AR-XPS spectra of c- and m- plane n-GaN crystals
D. Isono; R. Amiya; T. Yamaguchi and T. Honda
33rd Electronic Materials Symposium (EMS-33), 09 Jul. 2014

RF-MBE growth of group-III nitrides and mist CVD growth of group-III oxides
T. Yamaguchi; T. Onuma; H. Nagai; C. Mochizuki; M. Sato; T. Honda; T. Araki and Y. Nanishi (招待講演)
Third International Conference on Materials Energy and Environments (ICMEE 2014), 03 Jul. 2014

Fabrication of copper thin films using the solution based method
H. Nagai; T. Nakano; S. Mita; T. Yamaguchi; I. Takano; T. Honda and M. Sato (招待講演)
Third International Conference on Materials Energy and Environments (ICMEE 2014), 03 Jul. 2014

DERI Method; Possible Approach to Longer Wavelength Light Emitters Based on Nitride Semiconductors
Y. Nanishi; T. Yamaguchi and T. Araki (招待講演)
6th Forum on New Materials (CIMTEC2014), 18 Jun. 2014

Mist CVD growth of Ga-In-O films grown on alpha-Al2O3 substrates
K. Tanuma; T. Hatakeyama; T. Onuma; T. Yamaguchi and T. Honda
International Union of materials Research Societies-International Conference on Electronic Materials 2014 (IUMRS-ICEM’2014), 12 Jun. 2014

Spin-coating fabrication of In-doped ZnO films by molecular precursor method
R. Goto; T. Yasuno; T. Hatakeyama; H. Hara; H. Nagai; T. Yamaguchi; M. Sato and T. Honda
International Union of materials Research Societies-International Conference on Electronic Materials 2014 (IUMRS-ICEM’2014), 12 Jun. 2014

Influence of Surface Oxides for Band Bending of N-Type GaN
Y. Sugiura; R. Amiya; D. Isono; T. Yamaguchi and T. Honda
5th International Symposium on Growth of III-Nitrides (ISGN-5), 22 May 2014

Fabrication of Pseudo Aluminum Templates on 4H-SiC and Growth of GaN on Pseudo Aluminum Templates by RF-MBE
Y. Watanabe; S. Osawa; D. Tajimi; T. Hatakeyama; T. Yamaguchi and T. Honda
5th International Symposium on Growth of III-Nitrides (ISGN-5), 19 May 2014

Mist Chemical Vapor Deposition Growth of Ga2O3, In2O3 and Their Alloys
T. Yamaguchi; K. Tanuma; T. Hatakeyama; T. Onuma and T. Honda
The 41st International Symposium on Compound Semiconductor (ISCS2014), 12 May 2014

RF-MBE growth of GaInN ternary alloys using DERI method and fabrication of pn-GaInN LEDs
T. Yamaguchi; K. Narutani; T. Onuma; T. Honda; T. Araki and Y. Nanishi (招待講演)
2014International Workshop on Future Energy Materials and Devices (IWFEMD 2014), 02 May 2014

Characterization of Dark Spots on GaInN Films by Using Fluorescence Microscope and Secondary Ion Mass Spectroscopy
N. Toyomitsu; L. Sang; T. Yamaguchi; T. Honda and M. Sumiya
Conference on LED and Its Industrial Application (LEDIA’14), 24 Apr. 2014

RF-MBE Growth of pn-GaInN Structure and Fabrication of Blue-Green Homojunction-Type Light Emitting Diode
K. Narutani; T. Yamaguchi; K. Wang; T. Araki; Y. Nanishi; L. Sang; M. Sumiya; S. Fujioka; T. Onuma and T. Honda
Conference on LED and Its Industrial Application (LEDIA’14), 24 Apr. 2014

Fabrication of Vertical-Type GaN-Based Metal Oxide Semiconductor Light-Emitting Diodes
S. Fujioka; T. Yasuno; A. Sato; T. Onuma; H. Nagai; T. Yamaguchi; M. Sato and T. Honda
Conference on LED and Its Industrial Application (LEDIA’14), 24 Apr. 2014

Effect of Pseudo Aluminum Templates in RF-MBE Growth of GaN on 4H-SiC
Y. Watanabe; S. Osawa; D. Tajimi; T. Yamaguchi and T. Honda
Conference on LED and Its Industrial Application (LEDIA’14), 24 Apr. 2014

Optical Properties of Ga-In-O Polycrystalline Films Fabricated by Molecular Precursor Method
T. Onuma; T. Yasuno; S. Takano; R. Goto; S. Fujioka; T. Hatakeyama; H. Hara; C. Mochizuki; H. Nagai; T. Yamaguchi; M. Sato and T. Honda
Conference on LED and Its Industrial Application (LEDIA’14), 23 Apr. 2014

Light emission properties of ultra thin InN in the GaN matrix
T. Honda; T. Yamaguchi; T. Onuma; D. Tajimi; N. Watanabe; N. Hashimoto; K. Kusakabe and A. Yoshikawa (招待講演)
International Conference on Metamaterials and Nanophysics (Metanano2014), Apr. 2014

GaInNのRF-MBE成長とpn ホモ接合型青緑色LEDの製作
20 Mar. 2014

ミストCVD法を用いたGa2O3結晶成長における成長速度の温度依存性
18 Mar. 2014

分子プリカーサー法で製作したGa-In-O多結晶薄膜の発光特性
17 Mar. 2014

蛍光顕微鏡と2次イオン質量分析を用いたGaInN薄膜の不均一評価
17 Mar. 2014

DERI Method; Possible Approach to Green, Red and IR Light Emitters Based on Nitride Semiconductors
Y. Nanishi; T. Yamaguchi; T. Araki and E. Yoon (招待講演)
SPIE Photonics West 2014, 04 Feb. 2014

DERI Method; Possible Approach to Green, Red and IR Light Emitters Based on Nitride Semiconductors
2014

Mist CVD growth of alpha-Ga2O3 on sapphire substrates and RF-MBE growth of GaN on alpha-Ga2O3/sapphire templates
T. Hatakeyama; T. Yamaguchi; D. Tajimi; Y. Sugiura; R. Amiya; T. Onuma and T. Honda
The 12th International Symposium on Advanced Technology (ISAT-12), 14 Nov. 2013

Ga2O3 and In2O3 growth by mist CVD
K. Tanuma; T. Yamaguchi; T. Hatakeyama; T. Onuma and T. Honda
The 12th International Symposium on Advanced Technology (ISAT-12), 14 Nov. 2013

Growth of InN and Related Alloys using DERI Method toward Fabrication of Optoelectronics Devices
T. Yamaguchi; K. Wang; T. Honda; E. Yoon; T. Araki; Y. Nanishi
The 2nd International Conference on Advanced Electromaterials (ICAE2013), 13 Nov. 2013

RF-MBE Growth of GaN/Al Heterostructures on 4H-SiC
S. Ohsawa; D. Tajimi; T. Yamaguchi; T. Honda
The 2nd International Conference on Advanced Electromaterials (ICAE2013), 13 Nov. 2013

Effects of (Al,Ga)Ox/GaN Interface States on GaN-based Schottky-type Light-emitting Diodes
S. Fujioka; R. Amiya; T. Onuma; T. Yamaguchi; T. Honda
The 2nd International Conference on Advanced Electromaterials (ICAE2013), 13 Nov. 2013

Impact of Native Surface Oxide on GaN Layers for their Surface Band Bending
R. Amiya; Y. Sugiura; D. Tajimi; T. Yamaguchi; T. Honda
The 2nd International Conference on Advanced Electromaterials (ICAE2013), 13 Nov. 2013

Ga2O3上GaN成長とGaN上Ga2O3成長
07 Nov. 2013

ミストCVD法を用いたGa2O3及びIn2O3成長
07 Nov. 2013

MBE Growth of Thick InN and InGaN Films using DERI Method
T. Araki; T. Yamaguchi; E. Yoon; Y. Nanishi
2013 JSPS-MRS Joint Symposia, 18 Sep. 2013

GaN系ショットキー型発光ダイオードにおける(Al,Ga)Ox/GaN界面準位の影響
17 Sep. 2013

硬X線光電子分光法を用いたMg-InN のエネルギーバンド分布評価
17 Sep. 2013

ミストCVD法を用いたGaN基板上へのGa2O3成長
16 Sep. 2013

beta-Ga2O3結晶における青色発光強度と抵抗率の相関
16 Sep. 2013

RF-MBEを用いたInGaN成長の膜厚依存性
16 Sep. 2013

4H-SiC上の疑似Al基板製作と疑似基板上へのGaN RF-MBE成長
16 Sep. 2013

表面酸化物のGaN表面フェルミ準位と表面バンド曲がりに及ぼす影響
16 Sep. 2013

Use of alpha-Ga2O3/alpha-Al2O3 template in GaN film growth
T. Hatakeyama; T. Yamaguchi; D. Tajimi; Y. Sugiura; T. Honda
2013 JSPS-MRS Joint Symposia, 16 Sep. 2013

Fabrication of Ga-In-O films by Molecular Precursor Method and Their Future Application of UV Transparent Electrodes
T. Yasuno; H. Nagai; H. Hara; Y. Sugiura; T. Yamaguchi; M. Sato; T. Honda
The 16th International Conference on II-VI Compounds and Related Materials (II-VI 2013), 11 Sep. 2013

RF-MBE Growth and Characterization of GaN Films on alpha-Ga203/Sapphire Template
T. Hatakeyama; T. Yamaguchi; D. Tajimi; Y. Sugiura; T. Honda
10th International Conference on Nitride Semiconductors 2013 (ICNS-10), 27 Aug. 2013

RF-MBE Growth of InGaN Ternally Alloys: Advantage of DERI method
T. Yamaguchi; K. Wang; T. Honda; E. Yoon; T. Araki; Y. Nanishi (招待講演)
The 16th Canadian Semiconductor Science and Technology Conference (CSSTC2013), 15 Aug. 2013

RF-MBE growth of GaN films on nitridated alpha-Ga2O3 buffer layer
T. Yamaguchi; T. Hatakeyama; D. Tajimi; Y. Sugiura; T. Onuma; T. Honda
17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 14 Aug. 2013

Message for Future Research and Development of Opto-Electronic Devices Based on Nitride Semiconductors
Y. Nanishi; T. Yamaguchi; T. Araki and E. Yoon (招待講演)
The 8th LED Semiconductor Lightings Conference, 13 Aug. 2013

Polarized Raman Spectra in beta-Ga2O3 Crystals
T. Onuma; S. Fujioka; T. Yamaguchi; M. Higashiwaki; K. Sasaki; T. Masui; T. Honda
17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 13 Aug. 2013

RF-MBE法による疑似Al基板を用いたGaN成長
10 Aug. 2013

Alpha-Ga2O3上へのGaN RF-MBE成長
10 Aug. 2013

GaN基板上へのショットキーダイオード製作における表面改質の基礎検討
10 Aug. 2013

分子プレカーサ法を用いた(0001)Sapphire基板上Ga-In-O薄膜の製作
10 Aug. 2013

RF-MBE法によるAlN/GaN構造上AlOx薄膜の結晶成長
10 Aug. 2013

表面酸化物によるGaN表面フェルミ準位と表面バンド曲がりの変化
10 Aug. 2013

Recent Progress and Issues of InN and InGaN Growth for Future Optoelectronic Devices
Y. Nanishi; T. Yamaguchi; T. Araki and E. Yoon (招待講演)
The WCU Korea-China Workshop on Nitride Semiconductors 2013, 22 Jul. 2013

Effects of surface modification on emission property of GaN Schottky diodes
S. Fujioka; R. Amiya; T. Onuma; T. Yamaguchi; T. Honda
32nd Electronic Materials Symposium (EMS-32), 11 Jul. 2013

RF-MBE growth of GaN films on alpha-Ga2O3/sapphire template
T. Hatakeyama; T. Yamaguchi; D. Tajimi; Y. Sugiura; T. Honda
32nd Electronic Materials Symposium (EMS-32), 11 Jul. 2013

The GaN growth on psude Aluminum templates by molecular beam epitaxy
S. Osawa; T. Hatakeyama; D. Tajimi; T. Yamaguchi; T. Honda
32nd Electronic Materials Symposium (EMS-32), 11 Jul. 2013

Characterization of Ga-In-O films fabricated by molecular precursor method
T. Yasuno; T. Oda; H. Nagai; H. Hara; Y. Sugiura; T. Yamaguchi; M. Sato; T. Honda
32nd Electronic Materials Symposium (EMS-32), 11 Jul. 2013

Influence of native surface oxide on GaN surface band bending
R. Amiya; Y. Sugiura; D. Tajimi; T. Yamaguchi; T. Honda
32nd Electronic Materials Symposium (EMS-32), 11 Jul. 2013

RF-MBE growth of AlOx/AlN/GaN heterostructures
Y. Sugiura; T. Yamaguchi; T. Honda; M. Higashiwaki
32nd Electronic Materials Symposium (EMS-32), 10 Jul. 2013

Impact of ultra-thin InN layers in GaN matrix for light-emitting diodes with super weak waveguides
D. Tajimi; Y. Sugiura; T. Hatakeyama; T. Onuma; T. Yamaguchi; T. Honda
32nd Electronic Materials Symposium (EMS-32), 10 Jul. 2013

RF-MBE法による疑似Al基板上へのGaN成長
22 Jun. 2013

表面酸化物によるGaN表面フェルミ準位に及ぼす影響
22 Jun. 2013

DERI法を応用したRF-MBEによるInGaN成長と評価
22 Jun. 2013

Compressively strained GaN growth on (0001) 4H-SiC with Al buffer by MBE
S. Osawa; D. Tajimi; T. Yamaguchi; T. Honda
E-MRS 2013 Spring Meeting, 28 May 2013

Effect of (GaN/AlN) ASF buffer layer in GaN growth on Al2O3 and silicon by RF-MBE
T. Yamaguchi; D. Tajimi; M. Hayashi; T. Igaki; Y. Sugiura; T. Honda
The 40th International Symposium on Compound Semiconductors (ISCS2013), 20 May 2013

Aluminum layers grown on (0001) 4H-SiC for the GaN growth by molecular beam epitaxy
S. Osawa; D. Tajimi; T. Yamaguchi; T. Honda
The 40th International Symposium on Compound Semiconductors (ISCS2013), 20 May 2013

In-situ RF-MBE growth of AlOx/AlN/GaN heterostructures
Y. Sugiura; T. Yamaguchi; T. Honda; M. Higashiwaki
The 40th International Symposium on Compound Semiconductors (ISCS2013), 20 May 2013

Growth of ultra-thin InN layers in GaN matrix for super weak waveguides
D. Tajimi; Y. Sugiura; T. Hatakeyama; T. Onuma; T. Yamaguchi; T. Honda
The 6th Asia-Pacific Workshop on Widegap Semiconductor (APWS2013), 14 May 2013

InN および In-rich InGaN をベースとした窒化物半導体による長波長発光デバイス開発への挑戦
27 Apr. 2013

Temperature Dependent Cathodo-Luminescence Spectraof beta-Ga2O3Crystals
T. Onuma; S. Fujioka; T. Yamaguchi; M. Higashiwaki; K. Sasaki; T. Masui; T. Honda
Conference on LED and Its Industrial Application (LEDIA’13), 25 Apr. 2013

Fabrication of Ga-In-O Films by Molecular Precursor Method
T. Yasuno; T. Oda; H.Nagai; H. Hara; Y. Sugiura; T. Yamaguchi; M. Sato; T. Honda
Conference on LED and Its Industrial Application (LEDIA’13), 24 Apr. 2013

Formation of Aluminum Templates Grown on(0001)4H-SiC for the GaN Growth by RF-MBE
S. Osawa; D. Tajimi; T. Yamaguchi; T. Honda
Conference on LED and Its Industrial Application (LEDIA’13), 24 Apr. 2013

Growth of GaN on alpha-Ga2O3/Sapphire Template by RF-MBE
T. Hatakeyama; T. Yamaguchi; D. Tajimi; Y. Sugiura; T. Honda
Conference on LED and Its Industrial Application (LEDIA’13), 24 Apr. 2013

Surface Modification of GaN Crystals and Its Effectson Optical Properties
S. Fujioka; R. Amiya; T. Onuma; T. Yamaguchi; T. Honda
Conference on LED and Its Industrial Application (LEDIA’13), 24 Apr. 2013

Recent Progress on InN and InGaN Growth for Future Optoelectronic Devices
Y. Nanishi; T. Yamaguchi; K. Wang; T. Araki and E. Yoon (招待講演)
Conference on LED and Its Industrial Application (LEDIA’13), 23 Apr. 2013

硬X線光電子分光法を用いたMgドープIn0.70Ga0.30Nの表面-バルク電子状態評価
28 Mar. 2013

表面酸化物によるGaN表面フェルミ準位の変化
28 Mar. 2013

beta-Ga2O3結晶の偏光ラマンスペクトル
28 Mar. 2013

In-situ RF-MBE法によるAlOx/AlN/GaN構造のヘテロ成長
28 Mar. 2013

Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth
T. Yamaguchi; K. Wang; T. Araki; T. Honda; E. Yoon; Y. Nanishi(招待講演)
SPIE Photonic West, 04 Feb. 2013

Growth of ultra-thin InN/GaN quantum well with super-weak waveguide by RF-MBE
T. Honda; D. Tajimi; Y. Sugiura; T. Onuma; T. Yamaguchi
Euro-MBE 2013, Feb. 2013

Recent Development of Growth and Characterization of InN, In-rich InGaN and Those Nano-structures
15 Jan. 2013

Fabrication of Ga-In-O Films by Molecular Precursor Method
2013

In-situ RF-MBE growth of AlOx/AlN/GaN heterostructures
2013

Aluminum layers grown on (0001) 4H-SiC for the GaN growth by molecular beam epitaxy
2013

Effects of surface modification on emission property of GaN Schottky diodes
2013

Message for Future Research and Development of Opto-Electronic Devices Based on Nitride Semiconductors
2013

Growth of InN and Related Alloys using DERI Method toward Fabrication of Optoelectronics Devices
2013

Effects of (Al,Ga)Ox/GaN Interface States on GaN-based Schottky-type Light-emitting Diodes
2013

Mist CVD growth of alpha-Ga2O3 on sapphire substrates and RF-MBE growth of GaN on alpha-Ga2O3/sapphire templates
2013

Growth of GaN on alpha-Ga2O3/Sapphire Template by RF-MBE
2013

Growth of ultra-thin InN layers in GaN matrix for super weak waveguides
2013

Impact of ultra-thin InN layers in GaN matrix for light-emitting diodes with super weak waveguides
2013

RF-MBE growth of AlOx/AlN/GaN heterostructures
2013

Influence of native surface oxide on GaN surface band bending
2013

Characterization of Ga-In-O films fabricated by molecular precursor method
2013

Recent Progress and Issues of InN and InGaN Growth for Future Optoelectronic Devices
2013

RF-MBE Growth of InGaN Ternally Alloys: Advantage of DERI method
2013

RF-MBE Growth and Characterization of GaN Films on alpha-Ga203/Sapphire Template
2013

Use of alpha-Ga2O3/alpha-Al2O3 template in GaN film growth
2013

MBE Growth of Thick InN and InGaN Films using DERI Method
2013

Ga2O3 and In2O3 growth by mist CVD
2013

Growth of ultra-thin InN/GaN quantum well with super-weak waveguide by RF-MBE
2013

Recent Progress on InN and InGaN Growth for Future Optoelectronic Devices
2013

Formation of Aluminum Templates Grown on(0001)4H-SiC for the GaN Growth by RF-MBE
2013

Temperature Dependent Cathodo-Luminescence Spectraof beta-Ga2O3Crystals
2013

Effect of (GaN/AlN) ASF buffer layer in GaN growth on Al2O3 and silicon by RF-MBE
2013

Compressively strained GaN growth on (0001) 4H-SiC with Al buffer by MBE
2013

RF-MBE growth of GaN films on alpha-Ga2O3/sapphire template
2013

Polarized Raman Spectra in beta-Ga2O3 Crystals
2013

RF-MBE growth of GaN films on nitridated alpha-Ga2O3 buffer layer
2013

Fabrication of Ga-In-O films by Molecular Precursor Method and Their Future Application of UV Transparent Electrodes
2013

Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth
2013

Surface Modification of GaN Crystals and Its Effectson Optical Properties
2013

The GaN growth on psude Aluminum templates by molecular beam epitaxy
2013

Impact of Native Surface Oxide on GaN Layers for their Surface Band Bending
2013

RF-MBE Growth of GaN/Al Heterostructures on 4H-SiC
2013

DERI法を用いたInGaN系量子ナノ構造のRF-MBE成長
30 Nov. 2012

Band-bending around the Surface of Zn and O-polarity Hexagonal ZnO Crystals
T. Honda; T. Onuma; Y. Sugiura; T. Yamaguchi
2012 Materials Research Society (MRS) Fall Meeting, 29 Nov. 2012

GaNの表面処理による表面フェルミ準位変化の推定
29 Nov. 2012

Fabrication of Ga2O3 Films by Molecular Precursor Method
T. Yasuno; T. Oda; H. Nagai; H. Hara; Y. Sugiura; T. Yamaguchi; M. Sato; T. Honda
2012 Materials Research Society (MRS) Fall Meeting, 28 Nov. 2012

RF-MBE法による交互供給緩衝層をSi基板上に導入したGaN薄膜の残留歪評価
08 Nov. 2012

クロストーク低減へ向けたultra-thin InN/GaN単一量子井戸の製作
08 Nov. 2012

Recent Development of Growth and Characterization of InN, In-rich InGaN and Those Nano-structures
Y. Nanishi; T. Yamaguchi; K. Wang; T. Araki; E. Yoon(招待講演)
IEEE International Conference on Solid-State and Integrated Circuit Technology, 31 Oct. 2012

Angle-resolved X-ray Photoelectron Spectroscopy Measurements of InN Grown by RF-MBE
R. Amiya; T. Yamaguchi; D. Tajimi; Y. Sugiura; J. Sakaguchi; T. Araki; Y. Nanishi; T. Honda
The 11th International Symposium on Advanced Technology (ISAT-11), 30 Oct. 2012

Estimation of Surface States of Ga- and N-face GaN Measurement Near the Valence-band Maximum by X-ray Photoelectron Spectroscopy
Y. Sugiura; R. Amiya; D. Tajimi; T. Onuma; T. Yamaguchi; H. Honda
The 11th International Symposium on Advanced Technology (ISAT-11), 30 Oct. 2012

Electron-beam Incident-angle-resolved Cathodoluminescence Studies on Bulk ZnO Crystals
T. Onuma; S. Fujioka; F. Tomori; T. Yamaguchi; T. Honda
The 11th International Symposium on Advanced Technology (ISAT-11), 30 Oct. 2012

Growth and Characterization of InN-based Materials
T. Yamaguchi; T. Araki; T. Honda; Y. Nanishi
The 11th International Symposium on Advanced Technology (ISAT-11), 30 Oct. 2012

Characterization of Fabricated Ga2O3 Thin Films on (0001) Sapphire Substrate by Molecular Precursor Method
T. Yasuno; T. Oda; H. Nagai; H. Hara; Y. Sugiura; T. Yamaguchi; M. Sato; T. Honda
The 11th International Symposium on Advanced Technology (ISAT-11), 30 Oct. 2012

Growth of InN and related materials using DERI method
T. Yamaguchi; T. Araki; T. Honda; Y. Nanishi(招待講演)
Intensive Discussion on Growth of Nitride Semiconductors, 22 Oct. 2012

Strong correlation between oxygen donor and nearsurface electron accumulation in non-polar mplane (10-10) InN film
A. Yang; Y. Yamashita; H Yoshikawa; T. Yamaguchi; M. Imura; M. Kaneko; O. Sakata; Y. Nanishi; K. Kobayashi
The International Workshop on Nitride Semiconductors 2012 (IWN2012), 18 Oct. 2012

Toward Longer Wavelength and Higher Speed -Challenge to Utilize Full Span of Nitride Semiconductors’ Band gap-
Y. Nanishi; T.Yamaguchi; K.Wang; T.Araki; E. Yoon(招待講演)
2012 Fall Meeting of the Korean Ceramic Society, 18 Oct. 2012

Injection-activated defect-governed recombination rate in InN
S. Nargelas; K. Jarasiunas; M. Vengris; T. Yamaguchi; Y. Nanishi
The International Workshop on Nitride Semiconductors 2012 (IWN2012), 18 Oct. 2012

T-dependence of local vibrational modes of Mg-H complexes in InN:Mg
R. Cusco; N. Domenech-Amador; L. Artus; K. Wang; T. Yamaguchi; Y. Nanishi
The International Workshop on Nitride Semiconductors 2012 (IWN2012), 18 Oct. 2012

Angled-resolved XPS measurements of InN films grown by RF-MBE
R. Amiya; T. Yamaguchi; D. Tajimi; M. Hayashi; Y. Sugiura; T. Honda; T. Araki; Y. Nanishi
The International Workshop on Nitride Semiconductors 2012 (IWN2012), 18 Oct. 2012

Surface and Bulk Electronic Structure of Mg-doped InN Analyzed by Hard X-ray Photoelectron Spectroscopy
M. Imura; S. Tsuda; T. Nagata; Y. Koide; A. Yang; Y. Yamashita; H. Yoshikawa; K. Kobayashi; M. Kaneko; T. Yamaguchi; N. Uematsu; T. Araki; Y. Nanishi
The International Workshop on Nitride Semiconductors 2012 (IWN2012), 16 Oct. 2012

HVPE growth of InN on InN/sapphire (0001) templates prepared by MBE
R. Imai; S. Yamamoto; R. Togashi; H. Murakami; Y. Kumagai; T. Yamaguchi; T. Araki; Y. Nanishi; A. Koukitu
The International Workshop on Nitride Semiconductors 2012 (IWN2012), 16 Oct. 2012

Fabrication of RGB pixels using integrated GaN based Schottky-type light-emitting diodes
T. Honda; T. Yamaguchi; N. Sakai; S. Fujioka; Y. Sugiura
The International Workshop on Nitride Semiconductors 2012 (IWN2012), 15 Oct. 2012

GaN growth on (111)Al by molecular beam epitaxy
T. Honda; T. Tajimi; N. Shinohara; Y. Sugiura; M. Hayashi; T. Yamaguchi
17th International Conference on Molecular Beam Epitaxy (MBE2012), 28 Sep. 2012

Growth of thick InGaN films with entire alloy composition using DERI method
T. Yamaguchi; N. Uematsu; T. Araki; T. Honda; E. Yoon; Y. Nanishi
17th International Conference on Molecular Beam Epitaxy (MBE2012), 28 Sep. 2012

Interface Control of III-Oxide/Nitride Composite Structures
M. Higashiwaki; S. Chowdhury; B. R. Swenson; U.K. Mishra; T. Igaki; T. Yamaguchi; T. Honda
2012 International Coference on Solid State Devices and Materials (SSDM2012), 25 Sep. 2012

硬X線光電子分光法を用いたInNの表面電子状態評価
13 Sep. 2012

ZnO単結晶の電子線入射角度依存カソードルミネセンス測定
13 Sep. 2012

酸化ガリウムのCLスペクトルの温度依存性
13 Sep. 2012

Polarity determination of InN films by hard X-ray photoelectron diffraction
12 Sep. 2012

Growth of InGaN-based heterostructures using DERI by RF-MBE
T. Araki; N. Uematsu; J. Sakaguchi; K. Wang; T. Yamaguchi; E. Yoon; Y. Nanishi
2012年（平成24年） 秋季 第73回応用物理学会学術講演会, 11 Sep. 2012

Angled-resolved X-ray photoelectron spectroscopy of c-plane InN grown by RF-MBE
R. Amiya; T. Yamaguchi; D. Tajimi; Y. Sugiura; T. Araki; Y. Nanishi; T. Honda
2012年（平成24年） 秋季 第73回応用物理学会学術講演会, 11 Sep. 2012

X-Ray photoelectron spectroscopy measurements around the valence-band of Ga- and N-face (0001) GaN
Y. Sugiura; D. Tajimi; R. Amiya; T. Yamaguchi; T. Honda
39th International Symposium on Compound Semiconductor (ISCS2012), 27 Aug. 2012

Incident angle resolved cathodoluminescence study of ZnO single crystals
T. Onuma; T. Yamaguchi; T. Honda
39th International Symposium on Compound Semiconductor (ISCS2012), 27 Aug. 2012

Frontier Research of Nitride Semiconductors toward Longer Wavelength and Higher Speed
Y. Nanishi; T. Yamaguchi; K. Wang; T. Araki; E. Yoon(招待講演)
2nd Solid-State Systems Symposium – VLSIs and Semiconductor Related Technologies, 22 Aug. 2012

RF-MBE法を用いたSi基板上GaN成長へのASF緩衝層の効果
07 Aug. 2012

短波長領域動作GaInN系太陽電池の基礎検討
07 Aug. 2012

分子プレカーサー法を用いた(0001)Sapphire基板上Ga2O3薄膜の製作
06 Aug. 2012

RF-MBE法により成長したInNの角度分解XPS測定
06 Aug. 2012

Toward strain control of GaN grown on Si by RF-MBE
T. Yamaguchi; D. Tajimi; T. Igaki; Y. Sugiura and T. Honda
The 9th International Symposium on Semiconductor Light Emitting Devices (ISSLED2012), 24 Jul. 2012

Fabrication of c-axis orientated Ga-doped MgZnO-based transparent electrodes by molecular precursor method for GaN-based UV LED
T. Honda; T.Yasuno; T. Oda; N. Sakai; T. Yamaguchi; H. Nagai; M. Sato
The 9th International Symposium on Semiconductor Light Emitting Devices (ISSLED2012), 24 Jul. 2012

Growth of InN, InGaN and those Nano-structures by DERI Method
Y. Nanishi; T. Yamaguchi; K. Wang; T. Araki; E. Yoon(招待講演)
2012 German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices, 21 Jul. 2012

Surface acoustic waves and elastic constants of InN epilayers determined by Brillouin scattering
R. J. Jiménez Riobóo; N. Domènech-Amador; R. Cuscó; C. Prieto; T. Yamaguchi; Y. Nanishi; L. Artús
The Forth International Symposium on Growth of III-Nitrides (ISGN-4), 19 Jul. 2012

In-situ RF-MBE growth of AlOx/n-GaN composite structures
M. Higashiwaki; T. Igaki; T. Yamaguchi; and T. Honda
The Forth International Symposium on Growth of III-Nitrides (ISGN-4), 17 Jul. 2012

In-situ monitoring of InGaN growth using DERI method
T. Araki; N. Uematsu; M. Yutani; T. Saito; J. Sakaguchi; T. Yamaguchi; T. Fujishima; E. Matioli; T. Palacios; Y. Nanishi
The Forth International Symposium on Growth of III-Nitrides (ISGN-4), 17 Jul. 2012

GaN layers growth on pseudo (111)Al substrates by RF-MBE andtheir chemical lift-off technique
T. Honda; M. Hayashi; Y. Sugiura; I. Takezawa; and T. Yamaguchi
The Forth International Symposium on Growth of III-Nitrides (ISGN-4), 17 Jul. 2012

Angled-resolved XPS measurements of In-polar and N-polar InN films
R. Amiya; T. Yamaguchi; D. Tajimi; M. Hayashi; Y. Sugiura; T. Honda; T. Araki; Y. Nanishi
31st Electronic Materials Symposium (EMS-31), 12 Jul. 2012

Growth of InGaN film and InGaN/InGaN periodic structure using DERI method
T. Yamaguchi; N. Uematsu; K. Wang; T. Araki; T. Honda; E. Yoon; Y. Nanishi
31st Electronic Materials Symposium (EMS-31), 12 Jul. 2012

X-ray photoelectron spectroscopy spectra of Ga- and N-face (0001)GaN around the valence-band binding energy
Y. Sugiura; D. Tajimi; R. Amiya; T. Yamaguchi; T. Honda
31st Electronic Materials Symposium (EMS-31), 12 Jul. 2012

Surface and Bulk Electronic Structure of Mg-doepd InN Analyzed by Hard X-ray Photoelectron Spectroscopy
M. Imura; S. Tsuda; T. Nagata; Y. Koide; A. Yang; Y. Yamashita; H. Yoshikawa; K. Kobayashi; M. Kaneko; T. Yamaguchi; N. Uematsu; R. Iwamoto; T. Araki; Y. Nanishi
31st Electronic Materials Symposium (EMS-31), 12 Jul. 2012

Impact of (GaN/AlN) alternating-source-feeding layer for the GaN growth on (111)Si substrates by RF-MBE
D. Tajimi; T. Igaki; Y. Sugiura; T. Yamaguchi; T. Honda
31st Electronic Materials Symposium (EMS-31), 11 Jul. 2012

The strain-controlled GaN growth on Si by RF-MBE
D. Tajimi; T. Igaki; Y. Sugiura; T. Yamaguchi; T. Honda
The 17th OptoElectronics and Communication Conference (OECC2012), 05 Jul. 2012

Angle-resolved XPS measurements of GaN and InN grown by RF-MBE
T. Yamaguchi; R. Amiya; D. Tajimi; M. Hayashi; Y. Sugiura; T. Honda; N. Uematsu; T. Araki; Y. Nanishi
The 17th OptoElectronics and Communication Conference (OECC2012), 05 Jul. 2012

Investigation of near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction
A. L. Yang; Y. Yamashita; M. Kobata; T. Matsushita; H. Yoshikawa; I. Píš; M. Imura; T. Yamaguchi; O. Sakata; Y. Nanishi; K. Kobayashi
The 6th International Conference on the Science and Technology for Advanced Ceramics, 26 Jun. 2012

Growth of InGaN/InGaN MQW structures using DERI by RF-MBE
T. Araki; N. Uematsu; K. Wang; T. Yamaguchi; E. Yoon; Y. Nanishi
The Electronic Materials Conference 2012 (EMC2012), 22 Jun. 2012

DERI法InGaN成長におけるラジカルモニタリング技術応用
28 Apr. 2012

DERI法を応用したInGaN/InGaN量子井戸構造の作製
17 Mar. 2012

ラジカルモニタリング技術を応用したDERI法InGaN成長の検討
17 Mar. 2012

InN Overgrowth Through in Situ A1N Nano-Mask on Sapphire Substrate
王科、荒木努、武内道一、山口智広、名西憓之
2012年 （平成24年） 春季 第59回応用物理学関係連合講演会, 17 Mar. 2012

A Natural PN Junction in Mg-Doped In-Polar InN Film Directly Detected by High Resolution Angle-Resolved Hard X-Ray Photoelectron Spectroscopy
16 Mar. 2012

AlおよびAlOx膜堆積が極性GaNのPL強度に与える影響
16 Mar. 2012

Al緩衝層を用いた化合物原料MBE法による(0001)4H-SiC上GaN薄膜の製作
16 Mar. 2012

RF-MBE法による (GaN/AlN)交互供給緩衝層上GaN薄膜のX線回折測定
16 Mar. 2012

n-GaN上へのAlOx薄膜のin-situ RF-MBE成長
16 Mar. 2012

窒化物半導体新領域開拓にむけての材料技術最近の展開
15 Mar. 2012

極性・非極性バルクZnO表面におけるCLスペクトルの比較
15 Mar. 2012

Free Holes in Mg Doped InN Confirmed by Thermopower Experiments
K. Wang; T. Yamaguchi; T. Araki; Y. Nanishi; N. Miller; M. Mayer; J. W. Ager; K. M. Yu; W. Walukiewicz
Fourth International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2012), Nagoya, Japan, 08 Mar. 2012

Importance of Advanced Plasma for Frontier Nitride Semiconductor Technologies
Y. Nanishi; T. Yamaguchi; K. Wang; T. Araki; E. Yoon(招待講演)
Fourth International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2012), Nagoya, Japan, 05 Mar. 2012

Application of DERI Method to thick InGaN and InN/InGaN MQW structure Growth
Y. Nanishi; T. Yamaguchi; K. Wang; T. Araki; E. Yoon(招待講演)
KAUST-UCSB-NSF Workshop on Solid-State Lighting, 13 Feb. 2012

Reduction of Threading Dislocation Density by Regrowth on In-Polar InN
T. Araki; T. Sakamoto; A. Miki; N. Uematsu; Y. Takamatsu; T. Yamaguchi; Y. Eoon and Y. Nanishi
SPIE Photonic West 2011, San Francisco, USA, 23 Jan. 2012

分子線エピタキシー（MBE）による結晶成長
20 Jan. 2012

InNおよびInGaN成長の最近の進展-DERI法の結果が示唆すること-
12 Jan. 2012

Application of DERI Method to thick InGaN and InN/InGaN MQW structure Growth
2012

Free Holes in Mg Doped InN Confirmed by Thermopower Experiments
2012

Growth of InGaN/InGaN MQW structures using DERI by RF-MBE
2012

The strain-controlled GaN growth on Si by RF-MBE
2012

Growth of InGaN film and InGaN/InGaN periodic structure using DERI method
2012

Surface acoustic waves and elastic constants of InN epilayers determined by Brillouin scattering
2012

Growth of InN, InGaN and those Nano-structures by DERI Method
2012

Growth of thick InGaN films with entire alloy composition using DERI method
2012

HVPE growth of InN on InN/sapphire (0001) templates prepared by MBE
2012

Injection-activated defect-governed recombination rate in InN
2012

Angled-resolved XPS measurements of InN films grown by RF-MBE
2012

Growth and Characterization of InN-based Materials
2012

Band-bending around the Surface of Zn and O-polarity Hexagonal ZnO Crystals
2012

Reduction of Threading Dislocation Density by Regrowth on In-Polar InN
2012

Angle-resolved XPS measurements of GaN and InN grown by RF-MBE
2012

GaN layers growth on pseudo (111)Al substrates by RF-MBE andtheir chemical lift-off technique
2012

Frontier Research of Nitride Semiconductors toward Longer Wavelength and Higher Speed
2012

Angled-resolved X-ray photoelectron spectroscopy of c-plane InN grown by RF-MBE
2012

Fabrication of RGB pixels using integrated GaN based Schottky-type light-emitting diodes
2012

Characterization of Fabricated Ga2O3 Thin Films on (0001) Sapphire Substrate by Molecular Precursor Method
2012

Estimation of Surface States of Ga- and N-face GaN Measurement Near the Valence-band Maximum by X-ray Photoelectron Spectroscopy
2012

Angle-resolved X-ray Photoelectron Spectroscopy Measurements of InN Grown by RF-MBE
2012

Importance of Advanced Plasma for Frontier Nitride Semiconductor Technologies
2012

InN Overgrowth Through in Situ A1N Nano-Mask on Sapphire Substrate
2012

X-ray photoelectron spectroscopy spectra of Ga- and N-face (0001)GaN around the valence-band binding energy
2012

In-situ monitoring of InGaN growth using DERI method
2012

In-situ RF-MBE growth of AlOx/n-GaN composite structures
2012

Toward strain control of GaN grown on Si by RF-MBE
2012

Growth of InGaN-based heterostructures using DERI by RF-MBE
2012

Surface and Bulk Electronic Structure of Mg-doped InN Analyzed by Hard X-ray Photoelectron Spectroscopy
2012

Toward Longer Wavelength and Higher Speed -Challenge to Utilize Full Span of Nitride Semiconductors’ Band gap-
2012

Growth of InN and related materials using DERI method
2012

Recent Development of Growth and Characterization of InN, In-rich InGaN and Those Nano-structures
2012

Investigation of near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction
2012

Impact of (GaN/AlN) alternating-source-feeding layer for the GaN growth on (111)Si substrates by RF-MBE
2012

Angled-resolved XPS measurements of In-polar and N-polar InN films
2012

Surface and Bulk Electronic Structure of Mg-doepd InN Analyzed by Hard X-ray Photoelectron Spectroscopy
2012

Fabrication of c-axis orientated Ga-doped MgZnO-based transparent electrodes by molecular precursor method for GaN-based UV LED
2012

X-Ray photoelectron spectroscopy measurements around the valence-band of Ga- and N-face (0001) GaN
2012

Incident angle resolved cathodoluminescence study of ZnO single crystals
2012

Interface Control of III-Oxide/Nitride Composite Structures
2012

GaN growth on (111)Al by molecular beam epitaxy
2012

Strong correlation between oxygen donor and nearsurface electron accumulation in non-polar mplane (10-10) InN film
2012

T-dependence of local vibrational modes of Mg-H complexes in InN:Mg
2012

Electron-beam Incident-angle-resolved Cathodoluminescence Studies on Bulk ZnO Crystals
2012

Fabrication of Ga2O3 Films by Molecular Precursor Method
2012

Application of DERI Method to InGaN Growth and Mg Doping
Y. Nanishi; T. Yamaguchi; K. Wang; T. Araki and E. Yoon(招待講演)
Advanced Workshop on 'Frontiers in Electronics' (WOFE 2011), 21 Dec. 2011

InNおよびGaN成長における原子脱離過程その場観察
15 Dec. 2011

(GaN/AlN)多重緩衝層を用いたRF-MBE法によるSi基板上GaN薄膜成長
15 Dec. 2011

In-plane epitaxial relationship of (0001) sapphire grown by compound-source MBE
Y. Sugiura; T. Oda; T. Onuma; T. Yamaguchi; and T. Honda
2011 Materials Research Society (MRS) Fall Meeting, Boston, USA, 01 Dec. 2011

Low temperature of GaN on psudo (111)Al substrates by RF-MBE
M. Hayashi; T. Goto; T. Yamaguchi; T. Igaki; and T. Honda
2011 Materials Research Society (MRS) Fall Meeting, Boston, USA, 01 Dec. 2011

X-ray diffraction pattern of ZnO layer grown by compound source MBE
R. Amiya; Y. Sugiura; T. Yamaguchi; and T. Honda
The 10th International Symposium on Advanced Technology (ISAT-10), 17 Nov. 2011

Ozone treatment of the substrates for the ZnO deposition by molecular precursor method
T. Oda; H. Hara; Y. Sugiura; T. Yasuno; T. Yamaguchi; M. Sato; and T. Honda
The 10th International Symposium on Advanced Technology (ISAT-10), 17 Nov. 2011

ECR-MBE法を用いたA面InNナノ構造の配列制御選択成長
04 Nov. 2011

HVPE法によるInN/sapphire(0001)MBEテンプレート上へのInN成長の検討
03 Nov. 2011

DERI法を用いたA面GaNテンプレート上A面InNの作成
30 Oct. 2011

極性および非極性GaN表面における表面再結合過程
01 Sep. 2011

六方晶GaNとZnOにおける表面再結合の比較
01 Sep. 2011

化合物原料MBE法を用いたZnO薄膜の結晶成長とその評価
31 Aug. 2011

RF-MBE 法による(GaN/AlN)交互供給緩衝層上GaN 薄膜成長
30 Aug. 2011

InN/sapphire(0001)MBEテンプレート上へのInN HVPEにおける成長速度の影響
30 Aug. 2011

In極性InN上への再成長による貫通転位密度低減
30 Aug. 2011

Built-in Potential Along the C-axis in MBE-grown,GaN Layers Observed by Angle Resolved X-ray Photoelectron Spectroscopy
T. Honda; T. Igaki; T. Yamaguchi; Y. Kumagai and A. Koukitu
28th North American Molecular Beam Epitaxy Conference (NAMBE2011), 16 Aug. 2011

Growths of InN/InGaN Periodic Structure and Thick InGaN Film using Droplet Elimination Process by Radical-beam Irradiation
T. Yamaguchi; T. Araki; T. Honda; E. Yoon and Y. Nanishi
28th North American Molecular Beam Epitaxy Conference (NAMBE2011), 16 Aug. 2011

Comparative Study of Surface Recombination in Hexagonal GaN and ZnO Surfaces
T. Onuma; N. Sakai; T. Igaki; T. Yamaguchi; A. A. Yamaguchi and T. Honda
28th North American Molecular Beam Epitaxy Conference (NAMBE2011), 15 Aug. 2011

RF-MBE法によるInNおよび関連混晶の成長と量子ナノ構造の形成
03 Aug. 2011

Mgドープp型InNの結晶成長と物性評価
03 Aug. 2011

DERI法を用いたInNおよびInGaN混晶の結晶成長
03 Aug. 2011

DERI法によるIn系窒化物半導体の結晶成長
22 Jul. 2011

Strong luminescence from self-assembled InN nanocolumns with few dislocations grown by molecular beam epitaxy
K. Wang; T. Araki; T. Yamaguchi; E. Yoon and Y. Nanishi
The 9th International Conference on Nitride Semiconductors (ICNS 2011), Glasgow, Scottland, 15 Jul. 2011

Fabrication of Nanostructure of A-plane InN on Patterned A-plane GaN Template by ECR-MBE
T. Araki; S. Yamashita; T. Yamaguchi; E. Yoon and Y. Nanishi
The 9th International Conference on Nitride Semiconductors (ICNS 2011), Glasgow, Scottland, 14 Jul. 2011

Hydrogen in InN with polar, nonpolar and semipolar surface orientations
V. Darakchieva; K. Lorenz; S. Ruffenach; M. -Y. Xie; E. Alves; M. Moret; O. Briot; W. J. Schaff; C. L. Hsiao; L. C. Chen; L. W. Tu; T. Yamaguchi and Y. Nanishi
The 9th International Conference on Nitride Semiconductors (ICNS 2011), Glasgow, Scottland, 14 Jul. 2011

PN junction measurement in InN
E. A. Llado; M. Mayer; N. Miller; T. Yamaguchi; K. Wang; E. Haller; Y. Nanishi and J. W. Ager
The 9th International Conference on Nitride Semiconductors (ICNS 2011), Glasgow, Scottland, 14 Jul. 2011

Proposal of thick InGaN film growth using advanced droplet elimination process by radical-beam irradiation
T. Yamaguchi; N. Uematsu; R. Iwamoto; T. Araki; E. Yoon and Y. Nanishi
The 9th International Conference on Nitride Semiconductors (ICNS 2011), Glasgow, Scottland, 13 Jul. 2011

Anharmonic phonon decay in InN thin films
N. Domenech-Amador; R. Cusco; L. Artus; T. Yamaguchi and Y. Nanishi
The 9th International Conference on Nitride Semiconductors (ICNS 2011), Glasgow, Scottland, 13 Jul. 2011

Investigation of InN Nanocolumns Grown on GaN Templates by Molecular Beam Epitaxy
K. Wang; T. Yamaguchi; T. Araki; E. Yoon and Y. Nanishi
The 9th International Conference on Nitride Semiconductors (ICNS 2011), Glasgow, Scottland, 13 Jul. 2011

Growth of Position-controlled InN Nanocolumns Grown by RF-MBE on Nano-imprinted Sapphire Substrates
M. H. Kim; T. Araki; K. S. Joo; Y. Nanishi; E. Yoon and T. Yamaguchi
The 9th International Conference on Nitride Semiconductors (ICNS 2011), Glasgow, Scottland, 13 Jul. 2011

Evaluation of P-type InN Using Temperature Dependence of I-V Characteristics
H. Sakurai; J. Kikawa; R. Iwamoto; K. Wang; T. Yamaguchi; T. Araki and Nanishi
The 9th International Conference on Nitride Semiconductors (ICNS 2011), Glasgow, Scottland, 13 Jul. 2011

In situ monitoring techniques by DERI method
T. Yamaguchi; K. Wang; T. Araki; T. Honda; E. Yoon and Y. Nanishi
30th Electronic Materials Symposium (EMS-30), 01 Jul. 2011

Temperature Dependence of I-V Characteristics of p-type InN grown by RF-MBE
H. Sakurai; J. Kikawa; R. Iwamoto; K. Wang; T. Yamaguchi; T. Araki and Y. Nanishi
30th Electronic Materials Symposium (EMS-30), 01 Jul. 2011

Thick InGaN growth using DERI method
N. Uematsu; T. Yamaguchi; R. Iwamoto; T. Sakamoto; T. Fujishima; T. Araki and Y. Nanishi
30th Electronic Materials Symposium (EMS-30), 01 Jul. 2011

Study on DERI growth of InN -Role of indium droplet-
T. Katsuki; T. Yamaguchi; T. Araki and Y. Nanishi
30th Electronic Materials Symposium (EMS-30), 01 Jul. 2011

Recent Progress of DERI Process for Growth of InN and Related Alloys
Y. Nanishi; T.Yamaguchi; T.Araki and E. Yoon(招待講演)
40th "Jaszowiec" International School and Conference on the Physics of Semiconductors, 29 Jun. 2011

Recombination dynamics in polar and nonpolar GaN surfaces
N. Sakai; T. Igaki; T. Onuma; A. A. Yamaguchi; T Yamaguchi and T. Honda
30th Electronic Materials Symposium (EMS-30), 29 Jun. 2011

Molecular Beam Epitaxial Growth and Characterization of InN Nanocolumns on GaN
K. Wang; T. Yamaguchi; T. Araki; E. Yoon and Y. Nanishi
Electronic Materials Conference 2011(EMC2011), 22 Jun. 2011

HVPE法によるInN/sapphire(0001)テンプレート上InN高速成長の検討
Jun. 2011

Growth of InN Nanocolumns on GaN Templates and Sapphire by RF-MBE
K. Wang; T. Yamaguchi; T. Araki; E. Yoon and Y. Nanishi
5th Asia-Pacific Workshop on Widegap Semiconductors, 22 May 2011

Recent Progress of InN and Related Alloys Grown by DERI Method
Y. Nanishi; T.Yamaguchi; K.Wang; T.Araki and E. Yoon(招待講演)
2011 E‐MRS Spring Meeting, 11 May 2011

Unintentional Incorporation of Hydrogen in InN with Different Surface Orientations
V. Darakchieva; K. Lorenz; M.-Y. Xie; N. P. Barradas; E. Alves; W. J. Schaff; C.L. Hsiao; L.C. Chen; L.W. Tu; T. Yamaguchi and Y. Nanishi
2011 E‐MRS Spring Meeting, 10 May 2011

N極性及びIn極性のInN-MIS構造の作製と評価
Mar. 2011

電流‐電圧特性の温度依存性評価によるp型InNの検証
Mar. 2011

Recent progress in Growth and characterization of InN and related alloys and those nano-structures
Y. Nanishi; T. Yamaguchi; K. Wang and T. Araki(招待講演)
Workshop on frontier photonic and electronic materials and devices, 2011 German-Japanese-Spanish joint workshop, Granada, Spain, Mar. 2011

Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN
T. Yamaguchi; T. Fujishima; T. Araki; E. Yoon and Y. Nanishi
Third International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2011), Nagoya, Japan, Mar. 2011

TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method
T. Araki; T. Sakamoto; R. Iwamto; T. Yamaguchi; E. Yoon and Y. Nanishi
Third International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2011), Nagoya, Japan, Mar. 2011

Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures
Y. Nanishi; T.Yamaguchi; K. Wang and T.Araki
Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop, Mar. 2011

Growth of InN Nanocolumns on GaN Templates and Sapphire by RF-MBE
2011

Recent Progress of DERI Process for Growth of InN and Related Alloys
2011

Study on DERI growth of InN -Role of indium droplet-
2011

Growth of Position-controlled InN Nanocolumns Grown by RF-MBE on Nano-imprinted Sapphire Substrates
2011

PN junction measurement in InN
2011

Strong luminescence from self-assembled InN nanocolumns with few dislocations grown by molecular beam epitaxy
2011

Comparative Study of Surface Recombination in Hexagonal GaN and ZnO Surfaces
2011

Growths of InN/InGaN Periodic Structure and Thick InGaN Film using Droplet Elimination Process by Radical-beam Irradiation
2011

Built-in Potential Along the C-axis in MBE-grown GaN Layers Observed by Angle Resolved X-ray Photoelectron Spectroscopy
2011

X-ray diffraction pattern of ZnO layer grown by compound source MBE
2011

In-plane epitaxial relationship of (0001) sapphire grown by compound-source MBE
2011

Low temperature of GaN on psudo (111)Al substrates by RF-MBE
2011

Application of DERI Method to InGaN Growth and Mg Doping
2011

Growth and fabrication of InN-based III-nitride structure using droplet elimination process by radical beam irradiation
2011

TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method
2011

Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures
2011

Molecular Beam Epitaxial Growth and Characterization of InN Nanocolumns on GaN
2011

Thick InGaN growth using DERI method
2011

Evaluation of P-type InN Using Temperature Dependence of I-V Characteristics
2011

Built-in Potential Along the C-axis in MBE-grown GaN Layers Observed by Angle Resolved X-ray Photoelectron Spectroscopy
28th North American Molecular Beam Epitaxy Conference (NAMBE2011), 2011

Recent progress in Growth and characterization of InN and related alloys and those nano-structures
2011

Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN
2011

In situ monitoring techniques by DERI method
2011

Investigation of InN Nanocolumns Grown on GaN Templates by Molecular Beam Epitaxy
2011

Fabrication of Nanostructure of A-plane InN on Patterned A-plane GaN Template by ECR-MBE
2011

Unintentional Incorporation of Hydrogen in InN with Different Surface Orientations
2011

Recent Progress of InN and Related Alloys Grown by DERI Method
2011

Recombination dynamics in polar and nonpolar GaN surfaces
2011

Temperature Dependence of I-V Characteristics of p-type InN grown by RF-MBE
2011

Proposal of thick InGaN film growth using advanced droplet elimination process by radical-beam irradiation
2011

Anharmonic phonon decay in InN thin films
2011

Hydrogen in InN with polar, nonpolar and semipolar surface orientations
2011

Ozone treatment of the substrates for the ZnO deposition by molecular precursor method
2011

Growth and fabrication of InN-based III-nitride structure using droplet elimination process by radical beam irradiation
T. Yamaguchi and Y. Nanishi (招待講演)
SPIE Photonic West 2011, San Francisco, USA, Jan. 2011

MBE法を用いたA面GaNテンプレート上Ａ面InN選択成長
Nov. 2010

窒化物半導体光半導体未踏領域への挑戦 －InNと関連混晶の新しい成長技術と評価
Nov. 2010

RF-MBE法を用いたr面サファイア基板上A面InN結晶高品質化に関する検討
Nov. 2010

DERI法InGaN成長を用いた厚膜化への試み
Sep. 2010

InNデバイス作製プロセスへのウエットエッチングの適用
Sep. 2010

Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure
T. Yamaguchi and Y. Nanishi (招待講演)
2010 International Coference on Solid State Devices and Materials (SSDM2010), Tokyo, Japan, Sep. 2010

Dry etching of In- and N- polar InN using inductively-coupled plasma
T. Fujishima; S. Takahashi; K. Morimoto; R. Iwamoto; N. Uematsu; M. Yutani; T. Yamaguchi; T. Araki and Y. nanisih
The International Workshop on Nitride Semiconductors 2010 (IWN2010), Florida, USA, Sep. 2010

Unintentional Incorporation of Hydrogen in InN: Diffusion Kinetics and Effect of Surface Orientation
V. Darakchieva; K. Lorenz; S. Miranda; N. Barradas; E. Alves; D. Rogala; H.-W. Becker; S. Ruffenach; O. Briot; W. Schaff; C.-L. Hsiao; L.-C. Chen; L.-W. Tu; T. Yamaguchi and Y. Nanishi
The International Workshop on Nitride Semiconductors 2010 (IWN2010), Florida, USA, Sep. 2010

DERI法を用いたInGaN成長と組成制御への試み
Sep. 2010

Evidence of Rectification in InN
N. Miller; J. W. Ager; E. Haller; W. Walukiewicz; K. Wang; R. Iwamoto; T. Yamaguchi; K. Kagawa; T. Araki and Y. Nanishi(招待講演)
The International Workshop on Nitride semiconductors (IWN2010), Florida, USA, Sep. 2010

Free Hole Concentration and Mobility in InN:Mg
N. Miller; J. W. Ager; E. Haller; W. Walukiewicz; K. Wang; R. Iwamoto; T. Yamaguchi; K. Kagawa; T. Araki and Y. Nanishi
The International Workshop on Nitride Semiconductors 2010 (IWN2010), Florida, USA, Sep. 2010

Wet Etching Process for InN Device Fabrication
A. Miki; K. Morimoto; N. Maeda; T. Yamaguchi; T. Araki and Y. Nanishi
The International Workshop on Nitride Semiconductors 2010 (IWN2010), Florida, USA, Sep. 2010

Growth of InN and related alloys using droplet elimination by radical beam irradiation
Y. Nanishi; T. Yamaguchi; K. Wang; T. Araki; M. Kaneko; E. Yoon; N. Miller; J. W. AgerⅢ; K. M. Yu and W. Walukiewicz (招待講演)
The International Workshop on Nitride semiconductors (IWN2010), Florida, USA, Sep. 2010

Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy
K. Wang; T. Yamaguchi; T. Araki; E. Yoon and Y. Nanishi
The International Workshop on Nitride Semiconductors 2010 (IWN2010), Florida, USA, Sep. 2010

Potential of Nitride Photocatalyst for Water Splitting
K. Ohkawa; T. Koyama; F. Sano; A. Hirako; T. Yamaguchi and Y. Nanishi
The International Workshop on Nitride Semiconductors 2010 (IWN2010), Florida, USA, Sep. 2010

TEMを用いたDERI法ドープInNの極微構造評価
Sep. 2010

Mg Doped InN and Search For Holes
K. Wang; R. Iwamoto; T. Yamaguchi; K. Kagawa; T. Araki; Y. Nanishi; N. Miller; M. Mayer; J. W. Ager III; K. M. Yu and W.
The International Workshop on Nitride Semiconductors 2010 (IWN2010), Florida, USA, Sep. 2010

InGaN growth using droplet elimination by radical-beam irradiation method
T. Yamaguchi; K. Wang; T. Araki; E. Yoon and N. Yasushi
16th International Conference on Molecular Beam Epitaxy (MBE2010), Berlin, Germany, Aug. 2010

Potential, Present Status and Future Challenges of InN and Related Alloys for Device Applications
Y. Nanishi; T. Yamaguchi and E. Yoon (招待講演)
The second LED domestic conference, Seoul, Korea, Aug. 2010

Effect of low-temperature InN buffer on A-plane InN growth on nitridated r-plane sapphire by RF-MBE
T. Araki; K. Kawashima; T. Yamaguchi and Y. Nanishi (招待講演)
The 16th International Conference on Crystal Growth (ICCG16), Beijing, China, Aug. 2010

Evidence of Free Holes in Mg Doped InN
K. Wang; R. Iwamoto; T. Yamaguchi; K. Kagawa; T. Araki; Y. Nanishi; N. Miller; M. Mayer; J. W. Ager; K. M. Yu and W. Walukiewicz
The Third International Symposium on Growth of Ⅲ-Nitrides (ISGN-3), Montpellier、France, Jul. 2010

Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE
T. Kimura; E. Fukumoto; T. Yamaguchi; K. Wang; M. Kaneko; T. Araki; E. Yoon and Y. Nanishi
The Third International Symposium on Growth of Ⅲ-Nitrides (ISGN-3), Montpellier、France, Jul. 2010

High-pressure optical absorption and Raman scattering in InN thin films grown by molecular beam epitaxy
F. J. Manjon; J. Ibanez; A. Segura; R. Cusco; L. Artus; T. Yamaguchi and Y. Nanishi
The 48th European High Pressure Research Group Conference (EHPRG), Jul. 2010

Various application of DERI (droplet elimination by radical-beam irradiation) method in growth of RF-MBE
T. Yamaguchi; H. Umeda; T. Sakamoto; T. Araki; E. Yoon and Y. Nanishi
29th Electronic Materials Symposium (EMS-29), Jul. 2010

Wet etching by KOH for InN device fabrication
A. Miki; K. Morimoto; N. Maeda; T. Yamaguchi; T. Araki and Y. Nanishi
29th Electronic Materials Symposium (EMS-29), Jul. 2010

Characterization of contact resistance of Ti/Al/Ti/Au ohmic metal on N-polar and In-polar InN films grown by RF-MBE
K. Morimoto; S. Kikuchi; N. Maeda; T. Yamaguchi and Y. Nanishi
29th Electronic Materials Symposium (EMS-29), Jul. 2010

RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization
T. Araki; H. Umeda; T. Yamaguchi; T. Sakamoto; E. Yoon and Y. Nanishi
22th Indium Phosphide and Related Materials Conference, Jun. 2010

Hydrogen in InN: ubiquitous phenomena in molecular beam epitaxy grown material
V. Darakchieva; K. Lorenz; N. P. Barradas; E. Alves; M.-Y. Xie; B. Monemar; M. Schubert; W.J. Schaff; C.L. Hsiao; L.C. Chen; L.W. Tu; T. Yamaguchi and Y. Nanishi
12th International Conference on Modern Materials and Technologies (CIMTEC2010), Tuscany, Italy, Jun. 2010

Mg doped InN and search for p-type InN
K. Wang; R. Iwamoto; T. Yamaguchi; K. Kagawa; T. Araki; Y. Nanishi; N. Miller; M. Mayer; W. Walukiewicz
Electronic Materials Conference 2010, Jun. 2010

Growth, monitoring and InN/InGaN MQW structure fabrication by DERI method
Y. Nanishi and T. Yamaguchi (招待講演)
IX International Conference of Polish Society for Crystal Growth, Gdansk-Sobieszewo, Poland, May 2010

DERI法を用いたＩｎ系窒化物半導体の結晶成長とデバイス構造作製への応用
May 2010

DERI法のRHEED強度その場観察手法を用いたラジカルセル診断
May 2010

Undoped and Mg-doped InN grown using droplet elimination by radical-beam irradiation method
T. Yamaguchi; K. Wang; R. Iwamoto; N. Miller; M. Mayer; J. W. Ager III; K. M. Yu; W. Walukiewicz; T. Araki and Y. Nanishi
The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010), May 2010

Free-charge carrier properties and doping mechanisms of thin films of InN and related alloys
V. Darakchieva; M. Schubert; K. Lorenz; N. P. Barradas; E. Alves; T. Hofmann; B. Monemar; W. J. Schaff; C. L. Hsiao; L. C. Chen; L. W. Tu; T. Yamaguchi and Y. Nanishi
5th International Conference on Spectroscopic Ellipsometry (ICSE-V), May 2010