Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering, Electronic materials/Electric materials

Nanotechnology/Materials, Crystal engineering, Crystal engineering

Nanotechnology/Materials, Applied materials, Applied materials

01 Apr. 2015 - Present

01 Apr. 2017 - Present

01 Apr. 2017 - Present

01 Apr. 2015 - Present

Gallium oxide : materials properties, crystal growth, and devices
Higashiwaki, Masataka; Fujita, Shizuo, Chapter 27: Optical Properties – Fundamental absorption edge and emission properties of β-Ga2O3 –
Springer, 2020
9783030371524

Homoepitaxial growth of thick Si-doped β-Ga₂O₃ layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy
Junya Yoshinaga; Yoshiki Iba; Kakeru Kubota; Yuma Terauchi; Takahito Okuyama; Shogo Sasaki; Kazutada Ikenaga; Takeyoshi ONUMA; Masataka Higashiwaki; Kazushige Shiina; Shuichi Koseki; Yuzaburo Ban; Yoshinao Kumagai
Applied Physics Express, 23 Apr. 2025, [Reviewed]

Strain-induced band-gap widening in (100) β-Ga2O3 thin films grown on θ−Al2O3 buffer layers
Kazuki Koreishi; Takeyoshi Onuma; Takuto Soma; Akira Ohtomo
Physical Review Materials, 10 Mar. 2025, [Reviewed]

Deposition of ZnO and Al-doped ZnO thin films using pressed-sintered targets
Rozen Grace B. Madera; Hiroki Nagai; Takeyoshi Onuma; Tohru Honda; Tomohiro Yamaguchi; Magdaleno R. Vasquez
Physica B: Condensed Matter, 01 Feb. 2025, [Reviewed]

Rocksalt-structured MgZnO-based UV-C lamp emitting in 190–220 nm spectral range using 146 nm line of Kr₂* generated by dielectric barrier discharge
Kotaro Ogawa; Toshiki Mitomi; Hideki Yajima; Wataru Kosaka; Hiroya Kusaka; Go Kobayashi; Tomohiro Yamaguchi; Tohru Honda; Kentaro Kaneko; Shizuo Fujita; Izumi Serizawa; Takeyoshi Onuma
Applied Physics Express, 01 Dec. 2024, [Reviewed]
Corresponding

Adsorption-controlled growth of homoepitaxial ＜i＞c-plane sapphire films
Lena N. Majer; Tolga Acartürk; Peter A. van Aken; Wolfgang Braun; Luca Camuti; Johan Eckl-Haese; Jochen Mannhart; Takeyoshi Onuma; Ksenia S. Rabinovich; Darrell G. Schlom; Sander Smink; Ulrich Starke; Jacob Steele; Patrick Vogt; Hongguang Wang; Felix V. E. Hensling
APL Materials, 01 Sep. 2024, [Reviewed]

GaInNのRF-MBE結晶成長と赤色発光デバイス応用
31 Jul. 2024, [Reviewed]

Epitaxial growth of α-(Al＜i＞xGa1−＜i＞x)2O3 by suboxide molecular-beam epitaxy at 1 µm/h
Jacob Steele; Kathy Azizie; Naomi Pieczulewski; Yunjo Kim; Shin Mou; Thaddeus J. Asel; Adam T. Neal; Debdeep Jena; Huili G. Xing; David A. Muller; Takeyoshi Onuma; Darrell G. Schlom
APL Materials, 01 Apr. 2024, [Reviewed]

Realization of cathodoluminescence in the 180 nm spectral range by suppressing thermal stress in mist chemical vapor deposition of rocksalt-structured MgZnO films
Kotaro Ogawa; Wataru Kosaka; Hiroya Kusaka; Kanta Kudo; Soichiro Ohno; Izumi Serizawa; Yuichi Ota; Tomohiro Yamaguchi; Tohru Honda; Kentaro Kaneko; Shizuo Fujita; Takeyoshi Onuma
Japanese Journal of Applied Physics, 04 Jan. 2024, [Reviewed]
Corresponding

Steady-state and dynamic characteristics of deep UV luminescence in rocksalt-structured MgxZn1-xO
T. Onuma; K. Kudo; M. Ono; W. Kosaka; K. Shima; K. Ishii; K. Kaneko; Y. Ota; T. Yamaguchi; K. Kojima; S. Fujita; S. F. Chichibu; and T. Honda
Journal of Applied Physics, 13 Jul. 2023, [Reviewed]
Lead, Corresponding

Natural band alignment of MgO1−xSx alloys
Y. Ota; K. Kaneko; T. Onuma; and S. Fujita
AIP Advances, 02 May 2023, [Reviewed]

Growth of α-In2O3 films with different concentrations of In2O3 powder used as source precursor by mist chemical vapor deposition
A. Taguchi; T. Yamamoto; K. Kaneko; K. Goto; T. Onuma; T. Honda; Y. Kumagai; S. Fujita; and T. Yamaguchi
Japanese Journal of Applied Physics, 19 Apr. 2023, [Reviewed]

Fabrication of Transparent and Conductive SWCNT/SiO2 Composite Thin-Film by Photo-Irradiation of Molecular Precursor Films
N. Ogawa; H. Nagai; Y. Kudoh; T. Onuma; T. Murayama; A. Nojima; and M. Sato
Nanomaterials, 16 Dec. 2021, [Reviewed]

Mist Chemical Vapor Deposition Growth of alfa-In2O3 Films Using Indium Oxide Powder as Source Precursor
A. Taguchi; S. Takahashi; A. Sekiguchi; K. Kaneko; S. Fujita; T. Onuma; T. Honda; and T. Yamaguchi
Physica Status Solidi (b), 20 Oct. 2021, [Reviewed]

Identification of free and bound exciton emission of MgO single crystal in vacuum ultraviolet spectral range
T. Onuma; W. Kosaka; K. Kudo; Y. Ota; T. Yamaguchi; K. Kaneko; S. Fujita; and T. Honda
Applied Physics Letters, 30 Sep. 2021, [Reviewed]
Lead, Corresponding

Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in beta-Ga2O3 substrate and homoepitaxial film
T. Onuma; K. Sasaki; T. Yamaguchi; T. Honda; A. Kuramata; S. Yamakoshi; and M. Higashiwaki
Applied Physics Letters, 21 Jun. 2021, [Reviewed]
Lead, Corresponding

Effect of thermal annealing on photoexcited carriers in nitrogen-ion-implanted beta-Ga2O3 crystals detected by photocurrent measurement
M. Nakanishi; M. H. Wong; T. Yamaguchi; T. Honda; M. Higashiwaki; and T. Onuma
AIP Advances, 25 Mar. 2021, [Reviewed]
Last, Corresponding

Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV alfa-(AlGa)2O3 on m-plane sapphire
R. Jinno; C. S. Chang; T. Onuma; Y. Cho; S.-T. Ho; D. Rowe; M. C. Cao; K. Lee; V. Protasenko; D. G. Schlom; D. A. Muller; H. G. Xing; D. Jena
Science Advances, 08 Jan. 2021, [Reviewed]

Hydrophilic titania thin films from a molecular precursor film formed via electrospray deposition on a quartz glass substrate precoated with carbon nanotubes
Natangue Heita Shafudah; Hiroki Nagai; Yutaka Suwazono; Ryuhei Ozawa; Yukihiro Kudoh; Taiju Takahashi; Takeyoshi Onuma; and Mitsunobu Sato
Coatings, 29 Oct. 2020, [Reviewed]

Impact of hydrochloric acid on the epitaxial growth of In2O3 films on (0001)α-Al2O3 substrates by mist CVD
T. Yamaguchi; S. Takahashi; T. Kiguchi; A. Sekiguchi; K. Kaneko; S. Fujita; H. Nagai; M. Sato; T. Onuma; and T. Honda
Applied Physics Express, 18 Jun. 2020, [Reviewed]

Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates
T. Yamaguchi; H. Nagai; T. Kiguchi; N. Wakabayashi; T. Igawa; T. Hitora; T. Onuma; T. Honda; and M. Sato
Applied Physics Express, 18 Jun. 2020, [Reviewed]

Electroreflectance study on optical anisotropy in beta-Ga2O3
T.Onuma; K.Tanaka; K.Sasaki; T.Yamaguchi; T.Honda; A.Kuramata; S.Yamakoshi; and M.Higashiwaki
Applied Physics Letters, 02 Dec. 2019, [Reviewed]
Lead, Corresponding

Excitation-current-density and temperature dependences of deep UV cathodoluminescence in rocksalt-structured MgxZn1-xO films
M.Ono; K.Ishii; K.Kaneko; T.Yamaguchi; T.Honda; S.Fujita; and T.Onuma
Journal of Applied Physics, 13 Jun. 2019, [Reviewed]
Last, Corresponding

Pure deep-ultraviolet cathodoluminescence from rocksalt-structured MgZnO grown with carbon-free precursors
K.Ishii; M.Ono; K.Kaneko; T.Onuma; T.Honda; and S.Fujita
Applied Physics Express, 11 Apr. 2019, [Reviewed]

Modeling and interpretation of UV and blue luminescence intensity in beta-Ga2O3 by silicon and nitrogen doping
T.Onuma; Y.Nakata; K.Sasaki; T.Masui; T.Yamaguchi; T.Honda; A.Kuramata; S.Yamakoshi; M.Higashiwaki
Journal of Applied Physics, 20 Aug. 2018, [Reviewed]

Impact of local arrangement of Mg and Zn atoms in rocksalt-structured MgxZn1-xO alloys on bandgap and deep UV cathodoluminescence peak energies
T.Onuma; M.Ono; K.Ishii; K.Kaneko; T.Yamaguchi; S.Fujita; and T.Honda
Applied Physics Letters, 10 Aug. 2018, [Reviewed]

Deep-ultraviolet luminescence of rocksalt-structured MgxZn1−xO (x>0.5) films on MgO substrates
K.Kaneko; K.Tsumura; K.Ishii; T.Onuma; T.Honda; and S.Fujita
Journal of Electronic Materials, 25 Apr. 2018, [Reviewed], [Invited]

Relation between electrical and optical properties of p-type NiO films
M.Ono; K.Sasaki; H.Nagai; T.Yamaguchi; M.Higashiwaki; A.Kuramata; S.Yamakoshi; M.Sato; T.Honda; and T.Onuma
Physica Status Solidi (b), 14 Apr. 2018, [Reviewed]

Valence band edge tail states and band gap defect levels of GaN bulk and InxGa1-xN films detected by hard X-ray photoemission and photothermal deflection spectroscopy
M.Sumiya; S.Ueda; K.Fukuda; Y.Asai; Y.Cho; L.Sang; A.Uedono; T.Sekiguchi; T.Onuma; and T.Honda
Applied Physics Express, 25 Jan. 2018, [Reviewed]

Fabrication of Ag dispersed ZnO films by molecular precursor method and application in GaInN blue LED
D.Taka; T.Onuma; T.Shibukawa; H.Nagai; T.Yamaguchi; J.-S. Jang; M.Sato; and T.Honda
Physica Status Solidi (a), 13 Mar. 2017, [Reviewed]

Growth of rocksalt-structured MgxZn1-xO (x > 0.5) films on MgO substrates and their deep-ultraviolet luminescence
K.Kaneko; T.Onuma; K.Tsumura; T.Uchida; R.Jinno; T.Yamaguchi; T.Honda; and S.Fujita
Applied Physics Express, 18 Oct. 2016, [Reviewed]

Spectroscopic ellipsometry studies on β-Ga2O3 films and single crystal
T.Onuma; S.Saito; K.Sasaki; T.Masui; T.Yamaguchi; T.Honda; A.Kuramata; and M.Higashiwaki:
Japanese Journal of Applied Physics, 21 Sep. 2016, [Reviewed]

Surface plasmon resonant emission from Ag dispersed ZnO films fabricated by molecular precursor method
Daichi Taka; Takeyoshi Onuma; Takashi Shibukawa; Hiroki Nagai; Tomohiro Yamaguchi; Ja Soon Jang; Mitsunobu Sato; Tohru Honda
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, 01 Aug. 2016, [Reviewed]

Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in beta-Ga2O3 single crystals
T.Onuma; S.Saito; K.Sasaki; K.Goto; T.Masui; T.Yamaguchi; T.Honda; A.Kuramata; and M.Higashiwaki
Applied Physics Letters, 07 Mar. 2016, [Reviewed]

Valence band ordering in beta-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
T.Onuma; S.Saito; K.Sasaki; T.Masui; T.Yamaguchi; T.Honda; and M.Higashiwaki
Japanese Journal of Applied Physics, 14 Oct. 2015, [Reviewed]

Optical properties of Ga0.82In0.18N p-n homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy
T.Onuma; K.Narutani; S.Fujioka; T.Yamaguchi; K.Wang; T.Araki; Y.Nanishi; L.Sang; M.Sumiya; and T.Honda
Trans. Mat. Res. Soc. Japan, 01 Jun. 2015, [Reviewed]

Impacts of AlOx formation on emission properties of AlN/GaN heterostructures
T.Onuma; Y.Sugiura; T.Yamaguchi; T.Honda; and M.Higashiwaki
Applied Physics Express, 07 Apr. 2015, [Reviewed]

High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1-xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate
S.F.Chichibu; K.Hazu; K.Furusawa; Y.Ishikawa; T.Onuma; T.Ohtomo; H.Ikeda; and K.Fujito
Journal of Applied Physics, 02 Dec. 2014, [Reviewed]

Polarized Raman spectra in beta-Ga2O3 single crystals
T.Onuma; S.Fujioka; T.Yamaguchi; Y.Itoh; M.Higashiwaki; K.Sasaki; T.Masui; and T.Honda
Journal of Crystal Growth, 01 Sep. 2014, [Reviewed]

Cathodoluminescence spectra of Ga-In-O polycrystalline films fabricated by molecular precursor method
T.Onuma; T.Yasuno; S.Takano; R.Goto; S.Fujioka; T.Hatakeyama; T.Oda; H.Hara; C.Mochizuki; H.Nagai; T.Yamaguchi; M.Sato; and T.Honda
Japanese Journal of Applied Physics, 20 Mar. 2014, [Reviewed]

Correlation between blue luminescence intensity and resistivity in beta-Ga2O3 single crystals
T.Onuma; S.Fujioka; T.Yamaguchi; M.Higashiwaki; K.Sasaki; T.Masui; and T.Honda
Applied Physics Letters, 24 Jul. 2013, [Reviewed]

Electron-beam incident-angle-resolved cathodoluminescence studies on bulk ZnO crystals
T.Onuma; T.Yamaguchi; and T.Honda
Physica Status Solidi (c), 21 May 2013, [Reviewed]

Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloy
S.F.Chichibu; T.Onuma; K.Hazu; and A.Uedono
Physica Status Solidi (c), 08 Mar. 2013, [Reviewed]

Comparative study of surface recombination in hexagonal GaN and ZnO surfaces
T.Onuma; N.Sakai; T.Igaki; T.Yamaguchi; A.A.Yamaguchi; and T.Honda
Journal of Applied Physics, 18 Sep. 2012, [Reviewed]

Femtosecond-laser-driven photoelectron-gun for time-resolved cathodoluminescence measurement of GaN
T.Onuma; Y.Kagamitani; K.Hazu; T.Ishiguro; T.Fukuda; and S.F.Chichibu
Review of Scientific Instruments, 11 Apr. 2012, [Reviewed]

Collateral evidence for an excellent radiative performance of AlxGa1-xN alloy films of high AlN mole fractions
S.F.Chichibu; K.Hazu; T.Onuma; and A.Uedono
Applied Physics Letters, 01 Aug. 2011, [Reviewed]

Surface recombination of hexagonal GaN crystals
T.Onuma; N.Sakai; T.Okuhata; A.A.Yamaguchi; and T.Honda
Physica Status Solidi (c), 22 Jul. 2011, [Reviewed]

Time-resolved photoluminescence of a two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterostructure fabricated on ammonothermal GaN substrates
S.F.Chichibu; K.Hazu; Y.Kagamitani; T.Onuma; D.Ehrentraut; T.Fukuda; and T.Ishiguro
Applied Physics Express, 18 Mar. 2011, [Reviewed]

Impacts of anisotropic tilt mosaics of state-of-the-art m-plane freestanding GaN substrates on the structural and luminescent properties of m-plane AlxGa1−xN epilayers
K.Hazu; M.Kagaya; T.Hoshi; T.Onuma; and S.F.Chichibu
Journal of Vacuum Science and Technology B, 16 Mar. 2011, [Reviewed]

Major impacts of point defects and impurities on the carrier recombination dynamics in AlN
S.F.Chichibu; T.Onuma; K.Hazu; and A.Uedono
Applied Physics Letters, 17 Nov. 2010, [Reviewed]

Ammonothermal epitaxy of wurtzite GaN using an NH4I mineralizer
Y.Kagamitani; T.Kuribayashi; K.Hazu; T.Onuma; D.Tomida; R.Simura; S.F.Chichibu; K.Sugiyama; C.Yokoyama; T.Ishiguro; and T.Fukuda
Journal of Crystal Growth, 01 Nov. 2010, [Reviewed]

Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates
K.Nakahara; S.Akasaka; H.Yuji; K.Tamura; T.Fujii; Y.Nishimoto; D.Takamizu; A.Sasaki; T.Tanabe; H.Takasu; H.Amaike; T.Onuma; S.F.Chichibu; A.Tsukazaki; A.Ohtomo; and M.Kawasaki
Applied Physics Letters, 06 Jul. 2010, [Reviewed]

Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10-1-1) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
T.Onuma; A.Uedono; H.Asamizu; H.Sato; J.F.Kaeding; M.Iza; S.P.DenBaars; S.Nakamura; and S.F.Chichibu
Applied Physics Letters, 04 Mar. 2010, [Reviewed]

Identification of extremely radiative nature of AlN by time-resolved photoluminescence
T.Onuma; K.Hazu; A.Uedono; T.Sota; and S.F.Chichibu
Applied Physics Letters, 09 Feb. 2010, [Reviewed]

Light polarization characteristics of m-plane AlxGa1-xN films suffering from in-plane anisotropic tensile stresses
K.Hazu; T.Hoshi; M.Kagaya; T.Onuma; and S.F.Chichibu
Journal of Applied Physics, 01 Feb. 2010, [Reviewed]

Structural, optical, and homoepitaxial studies on the bulk GaN single crystals spontaneously nucleated by the Na-flux method
T.Onuma; T.Yamada; H.Yamane; and S.F.Chichibu
Applied Physics Express, 11 Sep. 2009, [Reviewed]

Synthesis, crystal structure and characterization of iron pyroborate (Fe_2B_2O_5) single crystals
T. Kawano; H. Morito; T. Yamada; T. Onuma; S. F. Chichibu; H. Yamane
Journal of Solid State Chemistry, 14 May 2009, [Reviewed]

Thermal stability of semi-insulating property of Fe-doped GaN bulk films studied by photoluminescence and monoenergetic positron annihilation techniques
M.Kubota; T.Onuma; Y.Ishihara; A.Usui; A.Uedono; and S.F.Chichibu
Journal of Applied Physics, 28 Apr. 2009, [Reviewed]

Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
A.Uedono; S.Ishibashi; S.Keller; C.Moe; P.Cantu; T.M.Katona; D.S. Kamber; Y.Wu; E.Letts; S.A.Newman; S.Nakamura; J.S.Speck; U.K.Mishra; S.P.DenBaars; T.Onuma; and S.F.Chichibu
Journal of Applied Physics, 03 Mar. 2009, [Reviewed]

Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane AlxGa1−xN films grown on m-plane freestanding GaN substrates by NH3 source molecular beam epitaxy
T.Hoshi; K.Hazu; K.Ohshita; M.Kagaya; T.Onuma; K.Fujito; H.Namita; and S.F.Chichibu
Applied Physics Letters, 20 Feb. 2009, [Reviewed]

Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy
T.Onuma; T.Shibata; K.Kosaka; K.Asai; S.Sumiya; M.Tanaka; T.Sota; A.Uedono; and S.F.Chichibu
Journal of Applied Physics, 30 Jan. 2009, [Reviewed]

Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy
S.F.Chichibu; H.Yamaguchi; L.Zhao; M.Kubota; T.Onuma; K.Okamoto; and H.Ohta
Applied Physics Letters, 14 Oct. 2008, [Reviewed]

Anisotropic optical gain in m-plane InxGa1−xN/GaN multiple quantum well laser diode wafers fabricated on the low defect density freestanding GaN substrates
T.Onuma; K.Okamoto; H.Ohta; and S.F.Chichibu
Applied Physics Letters, 04 Sep. 2008, [Reviewed]

Plasma-assisted molecular beam epitaxy of high optical quality MgZnO films on Zn-polar ZnO substrates
Y.Nishimoto; K.Nakahara; D.Takamizu; A.Sasaki; K.Tamura; S.Akasaka; H.Yuji; T.Fujii; T.Tanabe; H.Takasu; A.Tsukazaki; A.Ohtomo; T.Onuma; S.F.Chichibu; and M.Kawasaki
Applied Physics Express, 29 Aug. 2008, [Reviewed]

Impact of point defects on the luminescence properties of (Al,Ga)N
S.F.Chichibu; A.Uedono; T.Onuma; S.P.DenBaars; U.K.Mishra; J.S.Speck; and S.Nakamura
Materials Science Forum, 19 Aug. 2008, [Reviewed]

Direct correlation between the internal quantum efficiency and photoluminescence lifetime in undoped ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy
D.Takamizu; Y.Nishimoto; S.Akasaka; H.Yuji; K.Tamura; K.Nakahara; T.Onuma; T.Tanabe; H.Takasu; M.Kawasaki; and S.F.Chichibu
Journal of Applied Physics, 17 Mar. 2008, [Reviewed]

Microstructural evolution in m-plane GaN growth on m-plane SiC
Q.Sun; S.-Y.Kwon; Z.Ren; J.Han; T.Onuma; S.F.Chichibu; and S.Wang
Applied Physics Letters, 07 Feb. 2008, [Reviewed]

Impact of strain on free-exciton resonance energies in wurtzite AlN
H.Ikeda; T.Okamura; K.Matsukawa; T.Sota; M.Sugawara; T.Hoshi; P.Cantu; R.Sharma; J.F.Kaeding; S.Keller; U.K.Mishra; K.Kosaka; K.Asai; S.Sumiya; T.Shibata; M.Tanaka; J.S.Speck; S.P.DenBaars; S.Nakamura; T.Koyama; T.Onuma; and S.F.Chichibu
Journal of Applied Physics, 27 Dec. 2007, [Reviewed]

Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method
S.F.Chichibu; T.Onuma; T.Hashimoto; K.Fujito; F.Wu; J.S.Speck; and S.Nakamura
Applied Physics Letters, 20 Dec. 2007, [Reviewed]

Quantum-confined Stark effects in the m-plane In0.15Ga0.85N / GaN multiple quantum well blue light-emitting diode fabricated on low defect density free-standing GaN substrate
T.Onuma; H.Amaike; M.Kubota; K.Okamoto; H.Ohta; J.Ichihara; H.Takasu; and S.F.Chichibu
Applied Physics Letters, 29 Oct. 2007, [Reviewed]

Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1-xN / GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
T.Onuma; T.Koyama; A.Chakraborty; M.McLaurin; B.A.Haskell; P.T.Fini; S.Keller; S.P.DenBaars; J.S.Speck; S.Nakamura; U.K.Mishra; T.Sota; and S.F.Chichibu
Journal of Vacuum Science and Technology B, 31 Jul. 2007, [Reviewed]

Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by,time-resolved photoluminescence and monoenergetic positron annihilation techniques
S.F.Chichibu; A.Uedono; T.Onuma; B.A.Haskell; A.Chakraborty; T.Koyama; P.T.Fini; S.Keller; S.P.DenBaars; J.S.Speck; U.K.Mishra; S.Nakamura; S.Yamaguchi; S.Kamiyama; H.Amano; I.Akasaki; J.Han; and T.Sota
Philosophical Magazine, 17 May 2007, [Reviewed]

Recombination dynamics of excitons in Mg0.11Zn0.89O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy
M.Kubota; T.Onuma; A.Tsukazaki; A.Ohtomo; M.Kawasaki; T.Sota; and S.F.Chichibu
Applied Physics Letters, 04 Apr. 2007, [Reviewed]

Increased power from deep ultraviolet LEDs via precursor selection
C.Moe; T.Onuma; K.Vampola; N.Fellows; H.Masui; S.Newman; S.Keller; S.F.Chichibu; S.P.DenBaas; and D.Emerson
Journal of Crystal Growth, 01 Dec. 2006, [Reviewed]

Cross-sectional spatially-resolved cathodoluminescence study of cubic GaN films grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substrates
T.Onuma; T.Nozaka; H.Yamaguchi; T.Suzuki; and S.F.Chichibu
Journal of Crystal Growth, 17 Nov. 2006, [Reviewed]

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
S.F.Chichibu; A.Uedono; T.Onuma; B.A.Haskell; A.Chakraborty; T.Koyama; P.T.Fini; S.Keller; S.P.DenBaars; J.S.Speck; U.K.Mishra; S.Nakamura; S.Yamaguchi; S.Kamiyama; H.Amano; I.Akasaki; J.Han; and T.Sota
Nature Materials, 03 Sep. 2006, [Reviewed]

Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1-xN / GaN blue light emitting diodes fabricated on free-standing GaN substrates
T.Koyama; T.Onuma; H.Masui; A.Chakraborty; B.A.Haskell; S.Keller; U.K.Mishra; J.S.Speck; S.Nakamura; S.P.DenBaars; T.Sota; and S.F.Chichibu
Applied Physics Letters, 28 Aug. 2006, [Reviewed]

Exciton dynamics in nonpolar (11_20) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
T. Onuma; A. Chakraborty; B. A. Haskell; S. Keller; T. Sota; U. K. Mishra; S. P. DenBaars; J. S. Speck; S. Nakamura; S. F. Chichibu
Physica Status Solidi (C), 12 Jun. 2006, [Reviewed]

Strain-relaxation in NH3-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates
T.Koyama; M.Sugawara; Y.Uchinuma; J.F.Kaeding; R.Sharma; T.Onuma; S.Nakamura; and S.F.Chichibu
Physica Status Solidi (a), 18 May 2006, [Reviewed]

Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
S.Kamiyama; T.Maeda; Y.Nakamura; M.Iwaya; H.Amano; I.Akasaki; H.Kinoshita; T.Furusho; M.Yoshimoto; T.Kimoto; J.Suda; A.Henry; I.G.Ivanov; J.P.Bergman; B.Monemar; T.Onuma; and S.F.Chichibu
Journal of Applied Physics, 15 May 2006, [Reviewed]

Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by intentional point-defect elimination
S.F.Chichibu; T.Onuma; M.Kubota; A.Uedono; T.Sota; A.Tsukuazaki; A.Ohtomo; and M.Kawasaki
Journal of Applied Physics, 12 May 2006, [Reviewed]

Recombination dynamics of a 268-nm emission peak in Al0.53In0.11Ga0.36N / Al0.58In0.02Ga0.40N multiple quantum wells
T.Onuma; S.Keller; S.P.DenBaars; J.S.Speck; S.Nakamura; U.K.Mishra; T.Sota; and S.F.Chichibu
Applied Physics Letters, 17 Mar. 2006, [Reviewed]

Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods
S.F.Chichibu; T.Ohmori; N.Shibata; T.Koyama; and T.Onuma
Journal of Physics and Chemistry of Solids, 17 Nov. 2005, [Reviewed]

Growth of AlGaN nanowires by metalorganic chemical vapor deposition
J.Su; M.Gherasimova; G.Cui; H.Tsukamoto; J.Han; T.Onuma; M.Kurimoto; S.F.Chichibu; C.Broadbridge; Y.He; and A.V.Nurmikko
Applied Physics Letters, 27 Oct. 2005, [Reviewed]

Blue light-emitting diode based on ZnO
A.Tsukazaki; M.Kubota; A.Ohtomo; T.Onuma; K.Ohtani; H.Ohno; S.F.Chichibu; and M.Kawasaki
Japanese Journal of Applied Physics, 11 May 2005, [Reviewed]

Localized exciton dynamics in nonpolar (11-20) InxGa1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
T.Onuma; A.Chakraborty; B.A.Haskell; S.Keller; S.P.DenBaars; J.S.Speck; S.Nakamura; U.K.Mishra; T.Sota; and S.F.Chichibu
Applied Physics Letters, 08 Apr. 2005, [Reviewed]

Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO
S.F.Chichibu; A.Uedono; A.Tsukazaki; T.Onuma; M.Zamfirescu; A.Ohtomo; A.Kavokin; G.Cantwell; C.W.Litton; T.Sota; and M.Kawasaki
Semiconductor Science and Technology, 15 Mar. 2005, [Reviewed]

Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
S.F.Chichibu; A.Uedono; T.Onuma; T.Sota; B.A.Haskell; S.P.DenBaars; J.S.Speck; and S.Nakamura
Applied Physics Letters, 05 Jan. 2005, [Reviewed]

Repeated temperature modulation epitaxy for p-type doping and light emitting diode based on ZnO
A.Tsukazki; A.Ohtomo; T.Onuma; M.Ohtani; T.Makino; M.Sumiya; K.Ohtani; S.F.Chichibu; S.Fuke; Y.Segawa; H.Ohno; H.Koinuma; and M.Kawasaki
Nature Materials, 19 Dec. 2004, [Reviewed]

Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer
T.Onuma; S.F.Chichibu; A.Uedono; Y.-Z.Yoo; T.Chikyow; T.Sota; M.Kawasaki; and H.Koinuma
Applied Physics Letters, 08 Dec. 2004, [Reviewed]

Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector
S.F.Chichibu; T.Ohmori; N.Shibata; T.Koyama; and T.Onuma
Applied Physics Letters, 08 Nov. 2004, [Reviewed]

Reduction of point defect in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers
S.F.Chicihbu; M.Sugiyama; T.Nozaka; T.Suzuki; T.Onuma; K.Nakajima; T.Aoyama; M.Sumiya; T.Chikyow; and A.Uedono
Journal of Crystal Growth, 12 Oct. 2004, [Reviewed]

Improved surface morphology in GaN homoepitaxy by NH3-source molecular beam epitaxy
T.Koida; Y.Uchinuma; J.Kikuchi; K.R.Wang; M.Terazaki; T.Onuma; J.F.Kaeding; R.Sharma; S.Nakamura; and S.F.Chichibu
Journal of Vacuum Science and Technology B, 20 Aug. 2004, [Reviewed]

In situ monitoring of Zn* and Mg* species during helicon-wave-excited-plasma sputtering epitaxy of ZnO and Mg0.06Zn0.94O films
T.Koyama; T.Ohmori; N.Shibata; T.Onuma; and S.F.Chichibu
Journal of Vacuum Science and Technology B, 20 Aug. 2004, [Reviewed]

Radiative and nonradiative processes in strain-free AlxGa1-xN films studied by time-resolved photoluminescence and positron annihilation techniques
T.Onuma; SF.Chichibu; A.Uedono; T.Sota; P.Cantu; T.M.Katona; J.F.Kaeding; S.Keller; U.K.Mishra; S.Nakamura; and S.P.DenBaars
Journal of Applied Physics, 19 Feb. 2004, [Reviewed]

V-defect of ZnO thin films grown on Si as an ultraviolet optical path
Y-Z.Yoo; T.Sekiguchi; T.Chikyow; M.Kawasaki; T.Onuma; S.F.Chichibu; H.K.Song; and H.Koinuma
Applied Physics Letters, 21 Jan. 2004, [Reviewed]

Critical roles of decomposition-shielding layer deposited at low-temperature governing the structural and photoluminescence properties of cubic GaN epilayers grown on (001) GaAs by metalorganic vapor phase epitaxy
M.Sugiyama; T.Nosaka; T.Onuma; K.Nakajima; P.Ahmet; T.Aoyama; T.Chikyow; and SF.Chichibu
Japanese Journal of Applied Physics, 13 Jan. 2004, [Reviewed]

Influence of internal electric field on the recombination dynamics of localized excitons in an InGaN double-quantum-well laser diode wafer operated at 450nm
T.Onuma; SF.Chichibu; T.Aoyama; K.Nakajima; P.Ahmet; T.Azuhata; T.Chikyow; T.Sota; S.Nagahama; and T.Mukai
Japanese Journal of Applied Physics, 10 Dec. 2003, [Reviewed]

Anomalous pressure dependence of light emission in cubic InGaN
S. P. Lepkowski; T. Suski; H. Teisseyre; T. Kitamura; Y. Ishida; H. Okumura; T. Onuma; T. Koida; S. F. Chichibu
Physica Status Solidi (C), 24 Nov. 2003, [Reviewed]

Heteroepitaxy of hexagonal ZnS thin films directly on Si(111)
Y-Z.Yoo; T.Chikyow; M.Kawasaki; T.Onuma; S.F.Chichibu; and H.Koinuma
Japanese Journal of Applied Physics, 10 Nov. 2003, [Reviewed]

Improved emission efficiency in InGaN / GaN quantum wells with compositionally-graded barriers studied by time-resolved photoluminescence spectroscopy
T.Onuma; M.Uchinuma; E.-K.Suh; H.J.Lee; T.Sota; and SF.Chichibu
Japanese Journal of Applied Physics, 05 Nov. 2003, [Reviewed]

In situ spectral control of Zn species during helicon-wave-excited-plasma sputtering epitaxy of ZnO
T.Koyama; T.Onuma; and SF.Chichibu
Applied Physics Letters, 30 Sep. 2003, [Reviewed]

Recombination dynamics of localized excitons in cubic InxGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate
SF.Chichibu; T.Onuma; T.Aoyama; K.Nakajima; P.Ahmet; T.Chikyow; T.Sota; S.P.DenBaars; S.Nakamura; T.Kitamura; Y.Ishida; and H.Okumura
Journal of Vacuum Science and Technology B, 05 Aug. 2003, [Reviewed]

Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
T.Onuma; SF.Chichibu; Y.Uchinuma; T.Sota; S.Yamaguchi; S.Kamiyama; H.Amano; and I.Akasaki
Journal of Applied Physics, 29 Jul. 2003, [Reviewed]

Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells
SF.Chichibu; T.Onuma; T.Sota; S.P.DenBaars; S.Nakamura; T.Kitamura; Y.Ishida; and H.Okumura
Journal of Applied Physics, 30 Jan. 2003, [Reviewed]

Recombination dynamics of localized excitons in cubic phase InxGa1-xN/GaN multiple quantum wells on 3C-SiC/Si (001)
S.F.Chichibu; T.Onuma; T.Kitamura; T.Sota; S.P.DenBaars; S.Nakamura; and H.Okumura
Physica Status Solidi (b), 03 Dec. 2002, [Reviewed]

Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy
T.Onuma; S.F.Chichibu; T.Sota; K.Asai; S.Sumiya; T.Shibata; and M.Tanaka
Applied Physics Letters, 16 Jul. 2002, [Reviewed]

Decay processes of the C2 2Pai1/2u states of Ar2+, Kr2+, and Xe2+
H.Yoshii; T.Hayaishi; T.Onuma; T.Aoto; Y.Morioka; and K.Ito
Journal of Chemical Physics, 11 Jul. 2002, [Reviewed]

Cascade processes after 3p-shell threshold photoionization of Kr
T.Matsui; H.Yoshii; A.Higurashi; E.Murakami; T.Aoto; T.Onuma; Y.Morioka; A.Yagishita; and T.Hayaishi
Journal of Physics B: At. Mol. Opt. Phys., 03 Jul. 2002, [Reviewed]

Vibrationally resolved threshold photoelectron--photoion coincidence spectra of ArXe
H.Yoshii; T.Hayaishi; T.Onuma; T.Aoto; Y.Morioka; and K.Ito
Journal of Chemical Physics, 15 Apr. 2002, [Reviewed]

Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates
S.F.Chichibu; T.Yoshida; T.Onuma; and H.Nakanishi
Journal of Applied Physics, 28 Dec. 2001, [Reviewed]

Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells
S.F.Chichibu; M.Sugiyama; T.Onuma; T.Kitamura; H.Nakanishi; T.Kuroda; A.Tackeuchi; T.Sota; Y.Ishida; and H.Okumura
Applied Physics Letters, 19 Dec. 2001, [Reviewed]

Post-collision interaction effects following 4p-shell ionization of Xe
T.Hayaishi; T.Matsui; H.Yoshii; A.Higurashi; E.Murakami; A.Yagishita; T.Aoto; T.Onuma; and Y.Morioka
Journal of Physics B: At. Mol. Opt. Phys., 19 Dec. 2001, [Reviewed]

Formation of a hydrogen plasma from an incandescently heated hydrogen-catalyst gas mixture with an anomalous afterglow duration
R.L.Mills; T.Onuma; and Y.Lu
International Journal of Hydrogen Energy, 28 Jun. 2001, [Reviewed]

Pulsed-Field Ionization Zero-Kinetic-Energy Photoelectron Spectra of Ar2
T.Onuma; H.Yoshii; H.Ishijima; Y.Itou; T.Hayaishi; and Y.Morioka
Journal of Molecular Spectroscopy, 30 Jul. 1999, [Reviewed]

放射線教育の充実に向けた取り組み
Dec. 2014

サイズ・面方位の異なるGaN結晶における表面再結合過程
Mar. 2011

AlNエピタキシャル薄膜における励起子発光機構
Oct. 2009

非極性面窒化物半導体発光素子の最近の動向
Dec. 2008

ScAlMgO4基板上RF-MBE法GaInN成長におけるその場XRD-RSMを用いた成長初期過程観察
17 Mar. 2025

ミストCVD 法による岩塩構造MgZnO 多重量子井戸の製作と井戸層薄層化による量子効果の観測
16 Mar. 2025

Mist CVD法によるα-Cr2O3テンプレート上α-Ga2O3成長と結晶評価
16 Mar. 2025

準安定組成域における岩塩構造MgZnO混晶のミストCVD成長
16 Mar. 2025

InCl3を用いたMist CVD法による極薄膜In2O3成膜
16 Mar. 2025

In-situ monitoring using reflection high-energy electron diffraction and X-ray diffraction in RF molecular beam epitaxy growth of GaInN
T. Yamaguchi; T. Sasaki; M. Moriya; T. Onuma; T. Honda; M. Takahasi; Y. Nanishi
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2025, 27 Jan. 2025, [Invited]

Realization of Smooth Surface and Interface in Mist CVD Growth of Rocksalt structured-MgZnO/MgO MQWs
H. Aichi; K. Ogawa; T. Mitomi; K. Tanaka; Y. Ota; T. Yamaguchi; T. Honda; T. Onuma
50th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-50), 21 Jan. 2025

Si Diffusion Into Self-Organized GaN Nanocolumns Grown on Si(111) by RF-MBE
T. Honda; N. Goto; Y. Hosoya; T. Onuma; T. Yamaguchi
50th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-50), 21 Jan. 2025

ミストCVD法による低Mg組成RS-MgZnO薄膜成長における成長温度依存性
08 Dec. 2024

RFマグネトロンスパッタリング法で成膜したNiO薄膜の電気的特性のアニール温度依存性
08 Dec. 2024

Ⅲ族酸化物を原料に用いたMist CVD 法によるα-Ga2O3成長検討
08 Dec. 2024

大面積成膜に向けたMist CVD法によるα-Al2O3基板上α-Ga2O3成長の成長温度依存性
08 Dec. 2024

赤色発光ナノコラムLEDにおけるブルーシフトの抑制
23 Nov. 2024

岩塩構造酸化マグネシウム亜鉛薄膜の深紫外・真空紫外発光に関与する裾状態とトラップ状態の温度変化
22 Nov. 2024

ミストCVD法で成長した岩塩構造MgZnO/MgO多重量子井戸の製作および構造評価
22 Nov. 2024

原料交互供給式ミストCVD法によるRS-MgZnO/MgOの急峻なヘテロ界面の実現
22 Nov. 2024

Stability of Source Solution with Ethylenediamine in Cu3N Growth by Mist CVD
C. Tsukioka; S. Yoshida; N. Sugita; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi
The 23rd International Symposium on Advanced Technology (ISAT-23), 22 Nov. 2024

Toward thin In2O3 film growth on SiO2/Si substrate by Mist CVD method
R. Ishikawa; T. Yamamoto; Y. Hayashi; S. Aikawa; T. Onuma; T. Honda; T. Yamaguchi
The 23rd International Symposium on Advanced Technology (ISAT-23), 22 Nov. 2024

Epitaxial mist CVD growth of oxide and nitride crystal films
T. Yamaguchi; H. Nagai; T. Onuma; T. Honda
The 23rd International Symposium on Advanced Technology (ISAT-23), 22 Nov. 2024

α-In2O3のMistCVD結晶成長とMOSFET製作時におけるチャネル層膜厚調整方法の検討
18 Nov. 2024

Ga2O3パウダーを用いたβ-Ga2O3薄膜のMist CVD成長における原料濃度依存性
18 Nov. 2024

ミストCVD法による界面平坦な岩塩構造MgZnO/MgO 超格子構造の実現
18 Nov. 2024

ミストCVD成長した岩塩構造MgZnO混晶薄膜のバンド端付近の光学スペクトル
18 Nov. 2024

MgNiO薄膜のRFマグネトロトンスパッタ成長とアニール処理によるPt/MgNiO界面の接触抵抗低減の検討
18 Nov. 2024

Red-emission nanocolumn LEDs with semi-polar {10-11} InGaN/InGaN MQW grown on underlying bulk InGaN buffer
R. Shindo; H. Akagawa; T. Yamaguchi; R. Togashi; T. Onuma; I. Nomura; T. Honda; K. Kishino
International Workshop on Nitride Semiconductors (IWN 2024), 05 Nov. 2024

モノリシック集積m-LED におけるNi マスクを用いた高アスペクト比エッチングの検討
05 Nov. 2024

エチレンジアミンを用いたMist CVD 法によるCu3N 成長と銅粉末濃度の影響
05 Nov. 2024

新たな深紫外・真空紫外光源開発に向けた岩塩構造MgZnO/MgO 多重量子井戸の製作
05 Nov. 2024

RF-MBE Growth of GaInN Film and Nanocolumn Array on GaN
Y. Yamaguchi; T. Sasaki; H. Akagawa; J. Takeuchi; R. Shindo; T. Onuma; T. Honda; R. Togashi; Y. Nanishi; K. Kishino
2024 International Symposium on Novel and Sustainable Technology (ISNST2024), 17 Oct. 2024, [Invited]

Dependence of Hydrochloric Acid Concentration Adding to Source Solution in Mist CVD Growth of In2O3 Films on Amorphous SiO2
R. Ishikawa; T. Yamamoto; Y. Hayashi; S. Aikawa; T. Onuma; T. Honda; T. Yamaguchi
43rd Electronic Materials Symposium, 03 Oct. 2024

Impact of Condition for Alternating-Precursor Supply in Mist CVD Growths of RS-MgZnO/MgO Heterostructures and Superlattices
K. Ogawa; H. Aichi; T. Mitomi; K. Tanaka; T. Yamaguchi; T. Honda; T. Onuma
43rd Electronic Materials Symposium, 03 Oct. 2024

Characterization of in-gap emission in carbon and oxygen ion implanted GaN films by photothermal deflection spectroscopy
T. Saito; Y. Arai; I. Sakaguchi; T. Onuma; T. Honda; M. Sumiya
43rd Electronic Materials Symposium, 03 Oct. 2024

Growth of GaInN thin film by MOVPE in He ambient
Y. Arai; T. Saito; T. Onuma; T. Honda; M. Sumiya
43rd Electronic Materials Symposium, 02 Oct. 2024

Mist CVD Growth of α-Ga2O3 Films Using Ga(C5H7O2)3-Containing Source Solution with Different Incubation Times
K. Yamada; T. Yamamoto; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi
43rd Electronic Materials Symposium, 02 Oct. 2024

Distinct Satellite Observation in X-ray Diffraction Patterns for Rocksalt-Structured MgZnO/MgO Quantum Wells Grown by Mist CVD Method
H. Aichi; K. Ogawa; T. Mitomi; K. Tanaka; T. Yamaguchi; T. Honda; T. Onuma
43rd Electronic Materials Symposium, 02 Oct. 2024

岩塩構造MgZnO混晶のバンド端付近における光学特性
20 Sep. 2024

α-Al2O3上及びアモルファスSiO2上へのMist CVD法In2O3成膜における原料溶液添加塩酸濃度依存性
19 Sep. 2024

Mist CVD法におけるα-Ga2O3成長用Ga(C5H7O2)3水溶液の静置時間変化
19 Sep. 2024

Mist CVD法β-Ga2O3成膜における不純物取り込みの検討
19 Sep. 2024

ミストCVD法による岩塩構造MgZnO/MgO量子井戸の井戸層組成依存性
18 Sep. 2024

ミストCVD法による岩塩構造MgZnO/MgOダブルヘテロ及び超格子構造の製作検討
18 Sep. 2024

ナノコラム結晶成長におけるGaInN/GaInN MQWへのAlN 中間層の挿入効果
18 Sep. 2024

光熱偏向分光法によるGaN/GaInN量子井戸構造の評価
18 Sep. 2024

MOVPEによるGaInN混晶薄膜成長におけるHeキャリアガスの効果
18 Sep. 2024

(10-11)ファセットを有するGaInN系ナノコラム上MQWの検討
17 Sep. 2024

Mist CVD法を用いた(001)SrTiO3基板上Cu3N成長
17 Sep. 2024

Stability of Copper Complex in Ammonia Aqueous Solution Adding Ethylenediamine for Growth by Mist CVD
C. Tsukioka; S. Yoshida; N. Sugita; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi
29th International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 29), 06 Sep. 2024

Effect of incubation time on Ga(C5H7O2)3-containing source solutions for growth of alfa-Ga2O3 by Mist CVD
K. Yamada; T. Yamamoto; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi
29th International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 29), 06 Sep. 2024

Correlation Between Growth Conditions in Mist CVD Growth of Copper Nitride and Copper Oxides
N. Sugita; H. Nagai; T. Onuma; T. Honda; M. Sato; T. Yamaguchi
29th International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 29), 06 Sep. 2024

真空紫外分光による岩塩構造MgZnOの吸収端と励起子遷移の測定
31 Aug. 2024

Mist CVD法サファイア基板上α-Ga2O3, β-Ga2O3薄膜の電気的特性基礎検討
31 Aug. 2024

集積化マイクロ LEDの光アイソレーション評価
31 Aug. 2024

集積化マイクロ LEDのモノリシック製作検討
31 Aug. 2024

Mist CVD法を用いたMgO(100)基板上への岩塩構造MgZnO/MgO多重量子井戸構造の結晶成長
30 Aug. 2024

その場XRD-RSM測定を用いたScAlMgO4基板上GaInN成長の可能性探索
30 Aug. 2024

光熱偏向分光法による炭素、酸素イオン注入GaN薄膜における輻射・非輻射再結合の評価
30 Aug. 2024

GaInN系ナノコラムを用いた赤色 LEDの製作
30 Aug. 2024

Na2O-Y2O3-ZrO2-Sm2O3-P2O5-SiO2系結晶化ガラスの合成と発光特性の評価
29 Aug. 2024

Impacts of growth temperature on electrical properties of Mg-doped AlGaN films grown by RF-MBE under nitrogen-rich conditions
K. Shida; R. Nakamura; K. Mizumura; M. Hayasaki; Y. Itoh; T. Yamaguchi; T. Honda; T. Onuma
Compound Semiconductor Week 2024 (CSW 2024), 05 Jun. 2024

Relation between Absorption Edge and Exciton Transition in Rocksalt-structured MgZnO Films
R. Nemoto; K. Ogawa; H. Kusaka; T. Mitomi; Y. Ota; T. Yamaguchi; T. Honda; T. Onuma
Compound Semiconductor Week 2024 (CSW 2024), 05 Jun. 2024

Development of Rocksalt-structured-MgZnO-based UV-C Lamp Emitting in 190-220 nm Spectral Range
K. Ogawa; H. Yajima; G. Kobayashi; W. Kosaka; H. Kusaka; T. Mitomi; T. Yamaguchi; T. Honda; K. Kaneko; S. Fujita; I. Serizawa; T. Onuma
Compound Semiconductor Week 2024 (CSW 2024), 04 Jun. 2024

Impact of ZnO alloying on electrical and optical properties of MgNiZnO alloy films prepared by RF magnetron sputtering
T. Onuma; A. Ishikawa; M. Murayama; T. Akiba; T. Yamaguchi; K. Sasaki; A. Kuramata; T. Honda
The 5th International Workshop on Gallium Oxide and Related Materials (IWGO5), 28 May 2024

Optical Isolation in Integrated Micro-LEDs
Julian Keller; Haruto Fujii; Yamato Yamazaki; Takeyoshi Onuma; Tomohiro Yamaguchi; Tohru Honda
International Conference on Light-Emitting Devices and Their Industrial Applications ’24 (LEDIA ’24), 24 Apr. 2024

Demonstration of high aspect ratio etching by Ni mask process for m-LED monolithic integration
Haruto Fujii; Takeyoshi Onuma; Tomohiro Yamaguchi; Tohru Honda
International Conference on Light-Emitting Devices and Their Industrial Applications ’24 (LEDIA ’24), 24 Apr. 2024

(ScxGa1−x)2O3薄膜の偏光反射分光とバンド端構造の異方性
25 Mar. 2024

酸化マグネシウム(MgO)結晶多形のバンドアライメント
23 Mar. 2024

190-220 nmで蛍光するKr2エキシマ励起岩塩構造MgZnOランプの開発
23 Mar. 2024

無添加岩塩構造MgxZn1-xO薄膜の正孔捕獲中心
23 Mar. 2024

岩塩構造MgxZn1-xO薄膜における吸収端と励起子遷移の関係
23 Mar. 2024

遷移金属イオンの添加がNa2O-Y2O3-Sm2O3-P2O5-SiO2系結晶化ガラスの発光特性に与える影響
16 Mar. 2024

可視光LEDの開発の歴史と発光メカニズム・深紫外から真空紫外LEDへの展開
19 Feb. 2024, [Invited]

光無線給電可変焦点レンズ応用の基礎検討
19 Jan. 2024

酸化ガリウムとその関連材料の物性に関する基礎研究
19 Jan. 2024

Growth of ZnO thin films via sputtering of pressed targets in sub-atmospheric conditions
R. G. Madera; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi; M. Vasquez Jr
5th International Symposium of the Vacuum Society of the Philippines (ISVSP 2024), 18 Jan. 2024

Impact of Unintentional Boron Supply on Sapphire Nitridation Process for GaN Growth by Rf-MBE
T. Honda; K. Yajima; T. Yayama; T. Onuma; T. Yamaguchi
49th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-49), 18 Jan. 2024

In Situ Observation Using Synchrotron XRD-RSM in RF-MBE Growth of GaInN/GaN inserting LT-GaInN Buffer Layer
T. Yamaguchi; T. Sasaki; J. Takeuchi; T. Onuma; T. Honda; Y. Nanishi
5th International Symposium of the Vacuum Society of the Philippines (ISVSP 2024), 18 Jan. 2024, [Invited]

MgNiO薄膜の抵抗率及び金属電極との接触抵抗に熱アニール処理が及ぼす影響
16 Dec. 2023

ミストCVD成長した岩塩構造MgZnO薄膜における180 nm帯室温発光の実現
16 Dec. 2023

CTLM測定によるMgNiO薄膜と金属電極の接触抵抗に熱アニールが及ぼす影響の検討
09 Dec. 2023

Al、Ga、In添加MgO薄膜における欠陥形成が発光特性に与える影響
09 Dec. 2023

炭素フリー原料を用いたMist CVD成長Ga2O3の成長温度依存性
09 Dec. 2023

Mist CVD法によるアモルファスSiO2/Si基板上へのIn2O3成長
09 Dec. 2023

Mist CVD法α-Ga2O3成長における成長機構の検討
09 Dec. 2023

Mist CVD法によるSrTiO3基板上Cu3N成長の成長温度依存性
09 Dec. 2023

Mist CVD法を用いたCu3N成長におけるエチレンジアミン添加の効果
06 Dec. 2023

Mist CVD法によるβ-Ga2O3の高速成長への試み
06 Dec. 2023

HCl援用Mist CVD法α-In2O3成長における成長機構に関する検討
05 Dec. 2023

Growth of Cu3N Films by Mist CVD with Ethylenediamine
S. Yoshida; K. Omura; H. Nagai; T. Onuma; T. Yamaguchi; T. Honda
Summit of Materials Science 2023 and GIMRT User Meeting 2023, 21 Nov. 2023

Fabrication on GaInN nanocolumns LEDs on the underlying bulk GaInN
H. Akagawa; R. Shindo; J. Yamada; T. Yamaguchi; R. Togashi; T. Onuma; I. Nomura; T. Honda; K. Kishino
14th International Conference On Nitride Semiconductors (ICNS-14), 14 Nov. 2023

Study on the in gap emissions form C, O ion implanted GaN films by photothermal deflection sp ectroscopy and photoluminescence
M. Sumiya; T. Saito; Y. Arai; I. Sakaguchi; T. Onuma; T. Honda
14th International Conference On Nitride Semiconductors (ICNS-14), 14 Nov. 2023

Impact of In irradiation on RF MBE growths of high Al content AlGaN films on AlN templates
R. Nakamura; M. Hayasaki; Tomoya Yamaguchi; Tomohiro Yamaguchi; T. Honda; T. Onuma
14th International Conference On Nitride Semiconductors (ICNS-14), 14 Nov. 2023

Growth temperature dependence of lattice relaxation process in RF MBE growth of GaInN with insertion of GaInN buffer layer on GaN
J. Takeuchi; T. Sasaki; G. Okuma; T. Onuma; T. Honda; T. Yamaguchi; Y. Nanishi
14th International Conference On Nitride Semiconductors (ICNS-14), 14 Nov. 2023

エチレンジアミンを加えたMist CVD 法によるCu3N薄膜の成長温度変化
04 Nov. 2023

Structural, electrical and optical properties of alfa-In2O3 grown by mist chemical vapor deposition on (0001) alfa-Al2O3 substrate
T. Yamaguchi; A. Taguchi; K. Shima; T. Nagata; T. Yamamoto; Y. Hayakawa; M. Matsuda; T. Konno; T. Onuma; S. F. Chichibu; H. Honda
The 7th International Conference on Advanced Electromaterials (ICAE 2023), 02 Nov. 2023

Phase Control of Copper Oxides by Changing Temperatures and Gas Types in Growth of Mist CVD
N. Sugita; S. Yoshida; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi
The 22th International Symposium on Advanced Technology (ISAT-22), 20 Oct. 2023

Fabrication of top-down and bottom-up MOSFET using α-In2O3 films grown by Mist CVD
Y. Hayashi; A. Taguchi; S. Yamadera; T. Yamamoto; S. Aikawa; T. Onuma; H. Honda; T. Yamaguchi
The 22th International Symposium on Advanced Technology (ISAT-22), 19 Oct. 2023

Formation of ITO electrodes on InGaN-based p-n junction ordered nanocolumn arrays with different column periods
R. Shindo; H. Akagawa; T. Yamaguchi; R. Togashi; I. Nomura; T. Onuma; T. Honda; K. Kishino
The 22th International Symposium on Advanced Technology (ISAT-22), 19 Oct. 2023

Comparison of α-particle Detection Property of α-Ga2O3 and α-GIO Alloys Grown by Mist CVD
Ka. Yamada; Ko. Yamada; Ri. Yamada; T. Yamamoto; T. Sakurai; R. Kudo; T. Onuma; T. Yamaguchi; T. Aoki; T. Nakano; T. Honda
The 22th International Symposium on Advanced Technology (ISAT-22), 19 Oct. 2023

Realization of Cathodoluminescence in 190 nm Wavelength Range in Rocksalt-Structured MgZnO Films Grown by Mist Chemical Vapor Deposition
K. Ogawa; W. Kosaka; H. Kusaka; Y. Ota; T. Yamaguchi; T. Honda; K. Kaneko; S. Fujita; T. Onuma
The 22th International Symposium on Advanced Technology (ISAT-22), 19 Oct. 2023

Study on high-speed growth of β-Ga2O3 by Mist CVD method
M. Sugitani; T. Yamaguchi; K. Sasaki; A. Kuramata; T. Honda; T. Onuma
The 22th International Symposium on Advanced Technology (ISAT-22), 19 Oct. 2023

Sn-doped α-Ga2O3 Films Grown Using Sn Source Solutions with Different Aging Times and Their Electrical Properties
Ko. Yamada; T. Yamamoto; R. Yamada; Ka. Yamada; H. Nagai; S. Aikawa; T. Onuma; T. Honda; T. Yamaguchi
The 22th International Symposium on Advanced Technology (ISAT-22), 19 Oct. 2023

HCl-assisted Mist CVD Growth and Electrical Properties of α-In2O3 Films Using Various In-based Materials
T. Yamamoto; A. Taguchi; R. Yamada; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi
The 22th International Symposium on Advanced Technology (ISAT-22), 19 Oct. 2023

Optical transitions in rocksalt-structured MgZnO based metal-semiconductor-metal-type VUV sensor
H. Kusaka; K. Ogawa; T. Mitomi; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; T. Onuma
The 22th International Symposium on Advanced Technology (ISAT-22), 19 Oct. 2023

Relation between composition ratio and electrical properties in MgNiZnO films prepared by RF magnetron sputtering
A. Ishikawa; M. Murayama; T. Akiba; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 22th International Symposium on Advanced Technology (ISAT-22), 19 Oct. 2023

Impact of Thermal Annealing on Contact Resistance in MgxNi1-xO Films Studied by CTLM Measurements
T. Akiba; A. Ishikawa; M. Murayama; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
42th Electronic Materials Symposium, 13 Oct. 2023

Impact of Aging Variation of Source Precursor Solution in Mist CVD Growth of alpha-In2O3
T. Yamamoto; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi
42th Electronic Materials Symposium, 13 Oct. 2023

Impact of Aging Variation of Sn Solution in Mist CVD Growth of Sn-doped alpha-Ga2O3 Thin Film
Ko. Yamada; T. Yamamoto; R. Yamada; Ka. Yamada; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi
42th Electronic Materials Symposium, 12 Oct. 2023

Study on the radiative and non-radiative recombination form C, O ion-implanted GaN films by photothermal deflection spectroscopy
T. Saito; Y. Arai; M. Sumiya; I. Sakaguchi; T. Onuma; T. Honda
42th Electronic Materials Symposium, 11 Oct. 2023

alpha-GIO Alloy Growth by Mist CVD and its Application for Gamma-ray Detector
Ka. Yamada; Ko. Yamada; R. Yamada; T. Yamamoto; T. Sakurai; T. Onuma; T. Yamaguchi; T. Aoki; T. Nakano; T. Honda
42th Electronic Materials Symposium, 11 Oct. 2023

ナノコラムLEDにおける連続的なITO電極形成技術
22 Sep. 2023

(10-11)上GaInN/GaInN MQWs成長による高効率赤色発光
21 Sep. 2023

その場XRD-RSMを用いたGaN上GaInN Buffer層挿入GaInN RF-MBE成長－GaInNの成長温度依存性－
21 Sep. 2023

各種In系材料を出発原料に用いたMist CVD成長におけるα-In2O3薄膜の電気的特性に関する評価
21 Sep. 2023

高Mg組成岩塩構造MgZnO薄膜のミストCVD成長
21 Sep. 2023

Mist CVD法によるα-GIO混晶成長とα線検出応用に向けた検討
21 Sep. 2023

Mist CVD法Sn-doped α-Ga2O3薄膜成長におけるSn溶液の静置時間変化
21 Sep. 2023

III族不純物ドープMgO薄膜の正孔捕獲中心
20 Sep. 2023

光熱偏向分光法によるC, Oイオン注入したGaNの評価
22 Sep. 2023

エチレンジアミンを加えたMist CVD法によるCu3N薄膜成長
20 Sep. 2023

各種In系材料を出発原料に用いたMist CVD成長におけるα-In2O3薄膜の電気的特性に関する評価
20 Sep. 2023

Growth of ⍺-(AlxGa1-x)2O3 by Suboxide Molecular-Beam Epitaxy
J. Steele; K. Azizie; N. Pieczulewski; J. McCandless; I. M. Kankanamge; M. D. Williams; H. Xing; D. Jena; D. Muller; T. Onuma; D. Schlom
The 37th North American Conference on Molecular Beam Epitaxy (NAMBE 2023), 18 Sep. 2023

Impact of Post-growth Slow-cooling Process on the Growth of Rocksalt-structured MgZnO Films by Mist CVD
K. Ogawa; W. Kosaka; H. Kusaka; Y. Ota; T. Yamaguchi; T. Honda; K. Kaneko; S. Fujita; T. Onuma
International Conference on Solid State Devices and Materials (SSDM2023), 07 Sep. 2023

micro-LEDの電流拡散層形成に向けたITO薄膜のドライエッチングの検討
24 Aug. 2023

光無線給電における可変焦点レンズ利用の可能性
24 Aug. 2023

Mist CVD法α-GTO薄膜におけるSn溶液静置時間変化の影響
24 Aug. 2023

RF-MBE法によりAlN基板上に成長した高Al組成AlGaN薄膜に及ぼすIn照射の効果
24 Aug. 2023

GaまたはInドナー不純物添加によるMgO薄膜の発光特性への影響
24 Aug. 2023

ツインソースミストCVD法によるα-GIO混晶成長
24 Aug. 2023

ナノコラムLEDにおける電極形成技術
24 Aug. 2023

ミストCVD法による岩塩構造MgZnO薄膜の結晶成長と室温真空紫外線発光の観測
23 Aug. 2023

Mist CVD法酸化銅成長におけるガス種と成長温度が与える影響
23 Aug. 2023

モノリシック集積-LEDにおける下部電極の電気的分離
23 Aug. 2023

RFマグネトロンスパッタ法により成膜したNiZnOの電気的特性評価
23 Aug. 2023

RF-MBE成長赤色発光MQWにおける下地層構造変更の効果
23 Aug. 2023

In2O3薄膜を用いたMOSFET製作検討
22 Aug. 2023

RFマグネトロンスパッタ法により成膜したp型MgxNi1-xOと金属電極のCTLM法による接触抵抗評価
22 Aug. 2023

MistCVD法α-In2O3成長における原料溶液中のIn原料の状態に関する検討
22 Aug. 2023

Mist CVD法を用いたCu3N薄膜の光吸収係数の膜厚依存性
22 Aug. 2023

岩塩構造MgZnO薄膜を用いたMSM型光センサーの受光感度特性
22 Aug. 2023

MistCVD法によるβ-Ga2O3成長の検討
22 Aug. 2023

GaNのギャップ内準位における発光、非発光遷移に関する基礎検討
22 Aug. 2023

Growth of ⍺-(AlxGa1-x)2O3 by Suboxide Molecular-Beam Epitaxy
J. Steele; K. Azizie; N. Pieczulewski; J. McCandless; D. A. Muller; H. G. Xing; D. Jena; T. Onuma; D. G. Schlom
The 6th U.S. Workshop on Gallium Oxide (GOX 2023), 16 Aug. 2023

Growth of AZO thin films from pressed-sintered powder targets under subatmospheric conditions
R. G. B. Madera; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi; M. R. Vasquez Jr.
The 20th International Conference on Crystal Growth and Epitaxy (ICCGE-20), 03 Aug. 2023

Growth of GaInN/GaInN MQWs on nanocolumns with thick GaInN buffer layer using RF-MBE
H. Akagawa; J. Yamada; T. Yamaguchi; R. Togashi; T. Onuma; I. Nomura; T. Honda; and K. Kishino
The 20th International Conference on Crystal Growth and Epitaxy (ICCGE-20), 31 Jul. 2023

Epitaxial Growth of a-(AlxGa1-x)2O3 by Suboxide Molecular-Beam Epitaxy at 1 μm/h
J. Steele; K. Azizie; J. McCandless; H. G. Xing; D. Jena; T. Onuma; and D. G. Schlom
65th Electronic Materials Conference (EMC-65), 29 Jun. 2023

Far UV optical properties of MgO homoepitaxial and Zn doped MgO films prepared by mist chemical vapor deposition method
T. Onuma; W. Kosaka; H. Kusaka; K. Ogawa; Y. Ota; K. Kaneko; T. Yamaguchi; S. Fujita; and T. Honda
The 6th International Workshop on Ultraviolet Materials and Devices (IWUMD6), 06 Jun. 2023, [Invited]

Sub-bandgap transition in β-Ga2O3 crystals measured by photoluminescence excitation spectroscopy
T. Onuma; R. Adachi; K. Shoji; T. Yamaguchi; K. Sasaki; A. Kuramata; T. Honda; and M. Higashiwaki
Compound Semiconductor Week 2023 (CSW 2023), 01 Jun. 2023

Ar/N2混合ガス中スパッタリングで堆積したSnOx薄膜におけるN2濃度の影響
17 Mar. 2023

N2 および Ar/H2 アニールによる SnOx 薄膜の還元状態の比較
17 Mar. 2023

超ワイドバンドギャップ酸化物混晶のバリガ性能指数の評価
16 Mar. 2023

Mist CVD法により成長したα-In2O3薄膜の低キャリア濃度化とMOSFET製作
16 Mar. 2023

Mist CVD法による各種In系粉末を出発原料に用いたα-In2O3の成長機構に関する検討
16 Mar. 2023

ミストCVD法によるIII族ドープ岩塩構造MgZnO薄膜成長
15 Mar. 2023

岩塩構造酸化マグネシウム亜鉛薄膜の真空紫外領域での光電流スペクトル（II）
15 Mar. 2023

その場XRD-RSMを用いたGaN上GaInN Buffer層挿入GaInN RF-MBE成長における格子緩和過程観察
15 Mar. 2023

窒素RFパワー変化によるナノコラム結晶のGaInNバッファ層形状均一化の検討
15 Mar. 2023

Sub-200 nm far-UV emission characteristics in rocksalt-structured MgZnO epitaxial films
T. Onuma; W. Kosaka; H. Kusaka; K. Ogawa; Y. Ota; K. Kaneko; T. Yamaguchi; S. Fujita; and T. Honda
15th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma2023), 07 Mar. 2023, [Invited]

Mist CVD成長a-Ga2O3薄膜の放射線検出応用に向けた基礎検討
03 Mar. 2023

酸化ガリウムとその関連材料の物性に関する基礎研究 ~熱処理が発光特性に与える影響の調査~
21 Feb. 2023

Control of Mesa Shape by ICP-RIE Condition to Fabricate Monolithically Integrated Micro-LEDs
Y. Yamazaki; T. Onuma; T. Yamaguchi; and T. Honda
International Display Workshops ‘22 (IDW ’22), 16 Dec. 2022

Structural analysis in epitaxial growth of GaInN by RF-MBE using XRD-RSM
J. Takeuchi; T. Sasaki; H. Yokoyama; T. Onuma; T. Honda; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Growth and characterization of AlGaN and multiple quantum wells with varying III/V ratios by RF-MBE
M. Hayasaki; T. Yamaguchi; T. Yamaguchi; T. Honda; T. Onuma
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Electrical property and valence band offset in conductive MgNiO on sapphire substrates
M. Murayama; A. Ishikawa; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

TEM evaluation of in-situ nitrogen plasma irradiated GaInN
A. Tokushige; S. Ohno; Y. Hayakawa; T. Honda; T. Onuma; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Realization of high mobility in α-In2O3 film grown by mist CVD with different concentration of In2O3 powder as source precursor
A. Taguchi; T. Onuma; T. Honda; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Roles of In doping in rocksalt-structured MgZnO films grown by mist CVD method
M. Matsuda; K. Ogawa; Y. Ota; T. Yamaguchi; K. Kaneko; S. Fujita; T. Honda; T. Onuma
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Investigation on the stability of source solution for the α-In2O3 growth by mist CVD
T. Yamamoto; A. Taguchi; R. Yamada; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Study for composition control in mist CVD growth of α-GIO alloys
K. Yamada; T. Yamaguchi; T. Onuma; T. Honda
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Growth of ZnO thin films via magnetron sputtering using a custom-made sintered target
R. G. B. Madera; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi; M. R. Vasquez Jr
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Crystal growth of Cu3N by mist CVD with ethylenediamine
S. Yoshida; H. Nagai; T. Yamaguchi; T. Onuma; T. Honda
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Deposition Of Nitrogen-Doped Titanium Dioxide Thin Films Via Rf Magnetron Sputtering
M. M. Martinez; T. Onuma; H. Nagai; T. Honda; S. Aikawa; T. Yamaguchi; and M. R. Vasquez Jr
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Twin-free α-Ga2O3 films grown by mist CVD on (0001) α-Al2O3 substrates
R. Yamada; A. Kobayashi; K. Ueno; A. Sekiguchi; T. Onuma; T. Honda; H. Fujioka; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 24 Nov. 2022

Toward application of radiation detection in mist CVD growth of a-Ga2O3
R. Yamada; H. Nakagawa; T. Yamamoto; R. Hashimoto; T. Onuma; T. Honda; T. Aoki; T. Nakano; and T. Yamaguchi
The 7th International Symposium on Biomedical Engineering (ISBE2022), 25 Nov. 2022

GaInN 系ナノコラム結晶におけるGaInN バッファ層上GaInN/GaInN MQWs 成長
24 Nov. 2022

Mist CVD法により成長したα-In2O3薄膜における高移動度の実現
18 Nov. 2022

RFマグネトロンスパッタ法によるサファイア基板上に成膜したp形MgNiOの電気的特性及び価電子帯バンドオフセットの評価
18 Nov. 2022

MgO薄膜へのInドーピングが発光特性に与える影響
18 Nov. 2022

テーパーメサ構造μ-LEDの製作とアレイ構造への応用
18 Nov. 2022

Fabrication of monolithic blue micro-LED pixels and formation of line electrodes on oblique surface of micro-LED pixels
H. Chikui; S. Takeda; T Onuma; T. Yamaguchi; T. Honda
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 17 Nov. 2022

Photocurrent spectra of rocksalt-structured MgZnO films in vacuum UV spectral range
H. Kusaka; W. Kosaka; K. Ogawa; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; T. Onuma
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 15 Nov. 2022

Roles of In doped in MgZnO films grown by mist CVD method
M. Matsuda; K. Ogawa; Y. Ota; T. Yamaguchi; K. Kaneko; S. Fujita; T. Honda; T. Onuma
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 15 Nov. 2022

Local composition distribution in high Al content AlGaN/AlN quantum wells grown by RF-MBE
M. Hayasaki; Tomoya Yamaguchi; M. Hashimoto; Tomohiro Yamaguchi; T. Honda; and T. Onuma
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 14 Nov. 2022

Impact of change in V/III supply ratio on crystallinity and optical property in RF-MBE growth of High-Al Content AlGaN Under Metal-rich Conditions
M. Hayasaki; N. Tachibana; M. Hashimoto; Tomoya Yamaguchi; Tomohiro Yamaguchi; T. Honda; and T. Onuma
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 14 Nov. 2022

Impact of gas type on formation of twin structure in the growth of a-Ga2O3 by mist chemical vapor deposition
R. Yamada; A. Kobayashi; K. Ueno; A. Sekiguchi; T. Onuma; T. Honda; H. Fujioka; T. Yamaguchi
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 14 Nov. 2022

Realization of near-band-edge cathodoluminescence in 190 nm wavelength range by rocksalt-structured MgZnO epitaxial films
T. Onuma; K. Ogawa; W. Kosaka; H. Kusaka; Y. Ota; K. Kaneko; T. Yamaguchi; S. Fujita; T. Honda
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 14 Nov. 2022

Mist CVD 法 α-In2O3 成長における原料溶液中の反応に関する検討
12 Nov. 2022

RF-MBE 成長した Ga 極性及び N 極性 GaN 薄膜の比較検討
12 Nov. 2022

in-situ 窒素プラズマ照射された MBE 成長 GaInN の TEM 評価
12 Nov. 2022

顕微フォトルミネッセンス分光による β-Ga2O3 結晶の微細構造の可視化検討
12 Nov. 2022

Mist CVD 法を用いた Cu3N 成長における原料溶液の検討
12 Nov. 2022

RF-MBE による β-Ga2O3(-201)基板上への AlN 及び GaN 成長において成長前処理が成長層に及ぼす影響
12 Nov. 2022

岩塩構造 MgZnO/MgO ヘテロ接合の製作とバンドアライメント解析
12 Nov. 2022

RF-MBE による GaInN 成長における歪み緩和制御
12 Nov. 2022

Mist CVD 法 α-Ga2O3成長時に形成される双晶抑制に関する研究
12 Nov. 2022

Mist CVD 法により成長した酸化インジウムの高移動度化に伴う新機能開拓
12 Nov. 2022

Impact of RF power on electrical property of NiO films grown by RF magnetron spattering
Akito Ishikawa; M. Murayama; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 25 Oct. 2022

Microstructural characterization of β-Ga2O3,crystals by photoluminescence mapping measurements
K. Shoji; M. Nakanishi; M. Kasu; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 25 Oct. 2022

Growth of α-In2O3 films with different concentrations of In2O3 powder used as source precursor by mist CVD
A. Taguchi; K. Kaneko; K. Goto; T. Onuma; T. Honda; Y. Kumagai; S. Fujita; T. Yamaguchi
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 24 Oct. 2022

P-type conductivity in MgxNi1-xO films deposited on sapphire substrates by RF magnetron sputtering
M. Murayama; A. Ishikawa; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 24 Oct. 2022

RF-MBE growth of Mg doped GaN on β-Ga2O3,(-201) substrates
T. Yamaguchi; M. Hayasaki; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 24 Oct. 2022

Strain engineering of β-Ga2O3: Pulsed-laser deposition on (100) θ-Al2O3 templates and,impacts of compressive strain on physical properties
K. Koreishi; T. Soma; M. Kado; T. Onuma; and A. Ohtomo
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO4), 24 Oct. 2022

Schottky barrier height for Ga2O3 polymorphs: A simple estimation
Y. Ota; K. Kaneko; T. Onuma; and S. Fujita
41st Electronic Materials Symposium, 20 Oct. 2022

Analyses of Band Alignment in Rocksalt-structured MgZnO/MgO Interface Grown by Mist CVD
M. Matsuda; K. Ogawa; Y. Ota; T. Yamaguchi; K. Kaneko; S. Fujita; T. Honda; T. Onuma
41st Electronic Materials Symposium, 19 Oct. 2022

Temperature dependence of carrier concentration and Hall mobility in alpha-In2O3 films grown by mist CVD method
A. Taguchi; T. Onuma; K. Goto; K. Kaneko; Y. Kumagai; T. Honda; S. Fujita; T. Yamaguchi
41st Electronic Materials Symposium, 19 Oct. 2022

Importance of dissolving source precursor of Ga(C5H7O2)3 with HCl in mist CVD for α-Ga2O3 growth
R. Yamada; A. Sekiguchi; T. Onuma; T. Honda; T. Yamaguchi
2022 International Conference on Solid State Devices and Materials (SSDM202), 27 Sep. 2022

InドープMgO薄膜の発光特性
23 Sep. 2022

岩塩構造酸化マグネシウム亜鉛薄膜の真空紫外領域での光電流スペクトル
23 Sep. 2022

ミストCVD法によるInドープMgZnO薄膜の成長
23 Sep. 2022

ミスト化学気相成長法コランダム構造酸化ガリウム薄膜のガス種による双晶形成への影響
23 Sep. 2022

RF-MBEによるInN緩衝層を用いたGaInNの格子緩和制御
22 Sep. 2022

その場XRD-RSM を用いたRF-MBE GaInNヘテロエピタキシャル成長における緩和過程観察
22 Sep. 2022

Mist CVD法により成長したα-In2O3薄膜のキャリア濃度とホール移動度の温度依存性
21 Sep. 2022

Ar/N2混合雰囲気でスパッタ成膜した部分窒化SnOx­­­の特性評価
21 Sep. 2022

窒素アニール還元反応によるSnOx薄膜の局所結合状態
21 Sep. 2022

岩塩型MgZnO混晶のドーピング傾向の予測
21 Sep. 2022

Mist CVD法を用いたCu3N成長における安定した原料供給の検討
21 Sep. 2022

Mist CVD 法における原料溶液中の反応がα-In2O3成長に与える影響
20 Sep. 2022

Mist CVD法による(Ga1-xInx)2O3混晶成長の組成制御に向けた検討
20 Sep. 2022

赤色ナノコラム成長におけるGaInNバッファ層のⅤ/Ⅲ族比依存性
20 Sep. 2022

RF-MBE成長赤色発光MQWにおけるGaInN下地層挿入の効果
20 Sep. 2022

RF-MBEによる低転位密度GaInNへ向けた多層膜緩衝層の製作
23 Aug. 2022

Mist CVD法によるα-In2O3薄膜成長において出発原料種がキャリア濃度とホール移動度に与える影響
23 Aug. 2022

ZnドープMgO薄膜におけるVUV発光の観測
23 Aug. 2022

Mist CVD法による高塩酸濃度領域におけるGIO混晶成長と構造評価
23 Aug. 2022

その場 XRD-RSM測定によるGaInNヘテロエピタキシャル成長
23 Aug. 2022

RFマグネトロンスパッタによるサファイア基板上p形MgNiOの成膜と電気的特性の評価
23 Aug. 2022

岩塩構造MgZnO/MgOヘテロ接合界面におけるバンドアライメント評価
23 Aug. 2022

Mist CVD法α-Ga2O3成長における出発原料の溶解法に関する研究
23 Aug. 2022

顕微フォトルミネッセンス分光によるβ-Ga2O3結晶の微細構造評価
23 Aug. 2022

Mist CVD 法を用いたCu3N成長における原料濃度依存性
23 Aug. 2022

in-situ 窒素プラズマ照射GaInN表面上MBE再成長GaInNのTEM評価
23 Aug. 2022

β-Ga2O3(-201)基板へのAlNとGaNのRF-MBE成長
23 Aug. 2022

マイクロLED集積化におけるメサ側面の制御
23 Aug. 2022

ナノコラム成長におけるGaInNバッファ層のRFパワー依存性
23 Aug. 2022

高Al組成AlGaN薄膜とAlGaN/AlN量子井戸のRF-MBE成長と光学特性評価
23 Aug. 2022

Mist CVD法における原料溶液の加熱がα-In2O3成長に与える影響
23 Aug. 2022

RFマグネトロンスパッタ法により成長したNiO薄膜の電気的特性にRF出力が与える影響
23 Aug. 2022

Mist CVD法によるIn2O3成長において成長温度が相制御に与える影響
23 Aug. 2022

岩塩構造酸化マグネシウム亜鉛薄膜のVUV領域での光電流スペクトル測定
23 Aug. 2022

Vacuum UV Emission Property of Zn-doped MgO films Grown by Mist Chemical Vapor Deposition Method
W. Kosaka; K. Ogawa; K. Kusaka; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; and T. Onuma
Compound Semiconductor Week 2022 (CSW 2022), 03 Jun. 2022

岩塩構造MgZnOの結晶成長とサブ200 nmの発光特性評価
03 Jun. 2022, [Invited]

Analyses of Band Alignment in Rocksalt-structured MgZnO/MgO Interface
M. Matsuda; K. Ogawa; Y. Ota; T. Yamaguchi; K. Kaneko; S. Fujita; T. Honda; and T. Onuma
The 5th International Workshop on Ultraviolet Materials and Devices (IWUMD5), 26 May 2022

Potentials of Future Ultra-Wide Bandgap Oxide Semiconductors
S. Fujita; K. Kaneko; and T. Onuma
The 5th International Workshop on Ultraviolet Materials and Devices (IWUMD5), 25 May 2022, [Invited]

Electrical Property and Band-offset in MgxNi1-xO Films Deposited on Sapphire Substrates by RF Magnetron Sputtering
M. Murayama; A. Ishikawa; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; and T. Onuma
International Conference on Light-Emitting Devices and Their Industrial Applications ’22 (LEDIA ’22), 21 Apr. 2022

Vacuum UV Emission Property of Zn-doped MgO films
W. Kosaka; K. Ogawa; H. Kusaka; K. Kaneko; T. Yamaguchi; S. Fujita; T. Honda; and T. Onuma
International Conference on Light-Emitting Devices and Their Industrial Applications ’22 (LEDIA ’22), 21 Apr. 2022

岩塩構造MgZnO/MgO界面におけるバンドアライメント解析
26 Mar. 2022

ミストCVD成長した岩塩構造MgZnO薄膜の室温真空紫外線発光
26 Mar. 2022

時間分解PL測定による岩塩構造MgZnOの発光特性の評価
26 Mar. 2022

β-Ga2O3(-201)基板へのAlNとGaNのRF-MBE成長
25 Mar. 2022

TEMによるMist CVD法α-Al2O3基板上α-In2O3の結晶構造解析
25 Mar. 2022

出発原料にIn2O3パウダーおよびIn(acac)3を用いたMist CVD法によるα-In2O3成長と電気的特性評価
25 Mar. 2022

RF-MBEによる多層膜緩衝層を⽤いた低転位密度GaInNの製作
24 Mar. 2022

RF-MBE法による高Al組成AlGaN/AlN量子井戸成長と発光特性の評価
24 Mar. 2022

スピネル構造MgX2O4(X=Al,Ga,In)混晶のバンドエンジニアリング
23 Mar. 2022

Fabrication of far-UV emitter around 200 nm using ultrawide bandgap semiconductors
T. Onuma; W. Kosaka; M. Hashimoto; M. Hayasaki; T. Yamaguchi; and T. Honda
The 9th Advanced Functional Materials & Devices & The 4th Symposium for Collaborative Research on Energy Science and Technology (9thAFMD&4thSCREST2022), 05 Mar. 2022, [Invited]

Impact of Ga1-xInxN underlayer for growth of Ga1-yInyN/Ga1-xInxN MQW structure
T. Yamaguchi; K. Tahara; J. Yamada; T. Sasaki; H. Yokoyama; T. Onuma; T. Honda; Y. Nanishi; and K. Kishino
The 9th Advanced Functional Materials & Devices & The 4th Symposium for Collaborative Research on Energy Science and Technology (9thAFMD&4thSCREST2022), 05 Mar. 2022, [Invited]

Spatially resolved cathodoluminescence studies on α-In2O3 films grown by mist CVD method
A. Taguchi; K. Shima; M. Matsuda; T. Onuma; T. Honda; S. F. Chichibu; and T. Yamaguchi
The 9th Advanced Functional Materials & Devices & The 4th Symposium for Collaborative Research on Energy Science and Technology (9thAFMD&4thSCREST2022), 05 Mar. 2022

RF-MBEによる格子緩和制御層上高In組成GaInN MQWの成長と評価
23 Dec. 2021

ミストCVD法におけるGa2O3薄膜成長の塩酸濃度とガス種依存性
23 Dec. 2021

Mist CVD成長α-In2O3薄膜の電気的特性評価
23 Dec. 2021

真空紫外域で発光する岩塩構造MgZnO薄膜のミストCVD成長
23 Dec. 2021

RFマグネトロンスパッタ中の酸素プラズマの状態が酸化ニッケルの抵抗率に与える影響
23 Dec. 2021

Oxygen vacancy generation in CaF2-doped In2O3 transparent conductive film in terms of bond-dissociation energy
K. Oe; S. Mori; K. Watanabe; H. Nagai; T. Yamaguchi; T. Onuma; T. Honda; and S. Aikawa
Material Research Meeting 2021 (MRM2021), 16 Dec. 2021

p-type conversion of n-type SnOx thin-films by post-deposition N2 annealing
K. Watanabe; T. Kawaguchi; N. Wakabayashi; T. Yamaguchi; T. Onuma; T. Honda; and S. Aikawa
Material Research Meeting 2021 (MRM2021), 14 Dec. 2021

岩塩構造MgZnOの200nm発光、Far-UVへの展望
10 Dec. 2021, [Invited]

Growth and Optical Characteristics of High-AlN Content AlGaN on AlN Templates by RF-MBE Under Metal-rich Conditions
M. Hayasaki; N. Tachibana; M. Hashimoto; T. Yamaguchi; T. Yamaguchi; T. Honda; and T. Onuma
Materials Research Society, 2021 Fall Meeting & Exhibit, 09 Dec. 2021

Al flux control in growth of AlN on AlN templates by RF-MBE
T. Yamaguchi; N. Tachibana; M. Hashimoto; M. Hayasaki; T. Yamaguchi; T. Honda; and T. Onuma
Materials Research Society, 2021 Fall Meeting & Exhibit, 09 Dec. 2021

ミストCVD法により成長したRS-MgZnOにおける深紫外PL寿命の評価
09 Dec. 2021

岩塩構造酸化マグネシウム亜鉛MSM型真空紫外センサーの受光感度の温度依存性
03 Dec. 2022

micro-LED集積化における側面の制御による電極の形成
03 Dec. 2022

InドープMgZnO薄膜のミストCVD成長
03 Dec. 2022

RF-MBEによるβ-Ga2O3(-201)基板へのMgドープGaNヘテロ構造の製作
03 Dec. 2022

ミストCVD法により成膜したInドープMgO薄膜の発光特性
03 Dec. 2022

RF-MBE法によるAlGaN/AlNヘテロ構造と量子井戸構造の成長と評価
03 Dec. 2022

Mist CVDβ型酸化ガリウム成長に塩酸が与える影響
03 Dec. 2022

Mist CVDを用いたGTO薄膜成長におけるSnドープ量変化の影響
03 Dec. 2022

ミストCVDにおけるGa2O3薄膜の成長特性
03 Dec. 2021

出発原料に酸化インジウムパウダーを用いたMist CVD法による酸化インジウム薄膜成長
03 Dec. 2021

Mist CVD 法によるα-In2O3成長に及ぼす原料溶液混合経過時間の影響
03 Dec. 2021

石英ガラス基板上岩塩構造MgZnOにおける殺菌用UVC発光
03 Dec. 2021

赤色発光LEDの製作に向けたRF-MBEによる緩和制御層上GaInN周期構造の成長と評価
03 Dec. 2021

Fabrication of Line Electrodes on Oblique Surface of Micro-LED Pixels and Impact on Their Characteristics
H. Chikui; T. Onuma; T. Yamaguchi; and T. Honda
International Display Workshops ‘21 (IDW ’21), 02 Dec. 2021

Carrier gas type dependence of Ga2O3 thin film grown by mist Chemical Vapor Deposition
R. Yamada; S. Takahashi; A. Sekiguchi; T. Onuma; T. Honda; and T. Yamaguchi
The 20th International Symposium on Advanced Technology (ISAT-20), 24 Nov. 2021

Growth of GaInN multi quantum well on strain controlled layer by RF-MBE toward realization of light emitting diodes operating in red spectral region
M. Matsuda; R. Yoshida; K. Tahara; T. Yamaguchi; T. Onuma; and T. Honda
The 20th International Symposium on Advanced Technology (ISAT-20), 24 Nov. 2021

Improvement of Electrical Property of α-In2O3 Films Grown by Mist Chemical Vapor Deposition Using In2O3 Powder as Source Precursor
A. Taguchi; T. Onuma; T. Honda; and T. Yamaguchi
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Residual strain in GaN nanocolumns grown on Si(111)
N. Goto; Y. Hosoya; T. Onuma; T. Yamaguchi; and T. Honda
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Identification of Killer Defects in β-Ga2O3 Schottky Barrier Diodes by Raman Mapping Measurements
M. Nakanishi; K. Shoji; S. Masuya; M. Kasu; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; and T. Onuma
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Relationship between resistivity of NiO thin films and oxygen plasma condition at different deposition pressures
M. Murayama; A. Ishikawa; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; and T. Onuma
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Well width dependence on residual strain in high In composition GaInN/GaInN MQW by RF-MBE
K. Tahara; J. Yamada; T. Yamaguchi; Y. Nanishi; T. Onuma; T. Honda; and K. Kishino
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Emission Properties of Rocksalt-structured MgZnO Microcrystals for VUV Light Emitter
W. Kosaka; S. Hoshi; K. Kanta; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; and T. Onuma
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Impact on InN Buffer Layer Inserted into GaInN/GaN Interfaces By RF-MBE
D. Itabashi; R. Yoshida; T. Yamaguchi; T. Onuma; and T. Honda
The 20th International Symposium on Advanced Technology (ISAT-20), 23 Nov. 2021

Impacts of hydrochloric acid concentration and growth temperature on mist chemical vapor deposition growth of Ga2O3
R. Yamada; S. Takahashi; A. Sekiguchi; T. Onuma; T. Honda; and T. Yamaguchi
The 6th International Conference on Advanced Electromaterials (ICAE 2021), 11 Nov. 2021

Role of Ca in CaF2 incorporated In2O3 transparent conductive films
K. Oe; S. Mori; K. Watanabe; H. Nagai; T. Yamaguchi; T. Onuma; T. Honda; and S. Aikawa
34th International Microprocesses and Nanotechnology Conference (MNC 2021), 29 Oct. 2021

Demonstration of flexible transparent conductive film using B-doped In2O3
S. Mori; Y. Ichinoseki; K. Watanabe; K. Murano; K. Oe; H. Nagai; T. Yamaguchi; T. Onuma; T. Honda; and S. Aikawa
34th International Microprocesses and Nanotechnology Conference (MNC 2021), 29 Oct. 2021

Charge transfer and conduction type conversion in n-type SnO2 thin films by nitrogen annealing
K. Watanabe; T. Kawaguchi; T. Yamaguchi; T. Onuma; T. Honda; and S. Aikawa
34th International Microprocesses and Nanotechnology Conference (MNC 2021), 26 Oct. 2021

Evaluation of radiation detection characteristics by alfa-Ga2O3
H. Nakagawa; R. Yamada; M. Hashimoto; T. Yamaguchi; T. Onuma; T. Honda; T. Nakano; and T. Aoki
The 19th International Conference on Global Research and Education inter-Academia 2021, 21 Oct. 2021

Valence band modulation in MgO1-xYx (Y = S, Se) alloys
Y. Ota; K. Kaneko; T. Onuma; and S. Fujita
40th Electronic Materials Symposium, 11 Oct. 2021

Impact of oxygen plasma condition on resistivity of RF magnetron sputtered NiO thin films
M. Murayama; A. Ishikawa; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; and T. Onuma
40th Electronic Materials Symposium, 11 Oct. 2021

Evaluation of Microstructures in β-Ga2O3 Crystals Using Raman Mapping
M. Nakanishi; K. Shoji; S. Masuya; M. Kasu; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; and T. Onuma
40th Electronic Materials Symposium, 11 Oct. 2021

緩和制御層上GaInN周期構造のRF-MBE成長と評価
23 Sep. 2021

緑色発光を用いたβ-Ga2O3結晶の微細構造評価
21 Sep. 2021

MgSxO1-x混晶のバンドアライメント
13 Sep. 2021

ミスト化学気相成長法における塩酸と成長温度が酸化ガリウム成長に与える影響
13 Sep. 2021

Mist CVD法による酸化インジウムパウダーを用いたα-In2O3成長
13 Sep. 2021

CaF2ドープIn2O3透明導電膜における表面ラフネスおよび導電率のドーパント濃度依存性
12 Sep. 2021

窒素アニールによるn型SnO2薄膜の電荷移動と伝導型変換
12 Sep. 2021

MgO単結晶の真空紫外励起子スペクトル
12 Sep. 2021

195 nmで発光する岩塩構造MgZnO薄膜のミストCVD成長
12 Sep. 2021

ZnドープMgO薄膜の発光特性
12 Sep. 2021

BドープIn2O3透明導電膜における微量不純物濃度での移動度向上
12 Sep. 2021

RF-MBE法によるGaInN/GaInN多重量子井戸成長と評価
10 Sep. 2021

CaF2ドープIn2O3透明導電膜におけるCaとFの効果
03 Sep. 2021

窒素アニールによるn型SnOx薄膜の伝導型変換
03 Sep. 2021

BドープIn2O3透明導電膜におけるドーパント濃度の依存性
02 Sep. 2021

成長初期にSi層を挿入したGaInN膜のin-situおよびex-situ構造観察
11 Aug. 2021

フォトルミネッセンスマッピングによる酸化ガリウム結晶の構造欠陥評価
11 Aug. 2021

RF-MBEによるInN緩衝層を用いた高In組成GaInN薄膜の格子緩和制御
11 Aug. 2021

MgOとAlNの放射パターンの比較
11 Aug. 2021

岩塩構造MgZnO微結晶におけるVUV発光の観測
11 Aug. 2021

Mist CVD法による原料溶液中の塩酸濃度がGa2O3成長に与える影響
11 Aug. 2021

赤色発光をめざしたRF-MBEによる緩和制御層上GaInN周期構造の成長と評価
11 Aug. 2021

RF-MBEによるAlN ホモエピタキシャル成長におけるAlフラックス制御
11 Aug. 2021

NiO薄膜のRFマグネトロンスパッタ成膜における酸素ラジカル発光強度と抵抗率の関係
11 Aug. 2021

不均一Al組成AlGaNのRF-MBE成長過程の検討
11 Aug. 2021

Mist CVD 成長α-In2O3における出発原料にIn2O3パウダーを用いた影響
11 Aug. 2021

Mist CVD法(0001)α-Al2O3基板上α-In2O3の微細構造解析
10 Aug. 2021

マイクロLEDディスプレイ応用のための透明ポリイミド薄膜の形成
10 Aug. 2021

AlN/AlGaN深紫外線センサーの微細化と薄層化検討
10 Aug. 2021

ラマンマッピング測定による酸化ガリウム結晶の微細構造の可視化
10 Aug. 2021

高In組成GaInN多重量子井戸構造の成長
10 Aug. 2021

ライン電極を形成したμ-LEDピクセルの製作と評価
10 Aug. 2021

Si基板を用いた自己形成GaNナノコラム構造の製作
10 Aug. 2021

VUV Emission Properties Of Rocksalt-structured MgZnO Microcrystals Prepared On Quartz Glass Substrates
W. Kosaka; K. Kudo; Y. Igari; T. Yamaguchi; T. Honda; T. Onuma; S. Hoshi; K. Kanako; and S. Fujita
Compound Semiconductor Week 2021 (CSW 2021), 11 May 2021

Growth Of AlGaN On AlN Template By RF-MBE And Deep UV Sensor Characteristics
M. Hashimoto; N. Tachibana; M. Nakanishi; T. Yamaguchi; T. Honda; T. Onuma; and J. Cho
Compound Semiconductor Week 2021 (CSW 2021), 11 May 2021

Mist CVD Growth Of Alpha-In2O3 Films Using Indium Oxide Powder As Source Precursor
A. Taguchi; S. Takahashi; T. Yamaguchi; T. Onuma; T. Honda; S. Fujita; and K. Kaneko
Compound Semiconductor Week 2021 (CSW 2021), 11 May 2021

In situ XRD RSM measurements in MBE growth of GaInN film with low‐temperature GaInN buffer layer
T. Yamaguchi; T. Sasaki; T. Kiguchi; S. Ohno; H. Hirukawa; R. Yoshida; T. Onuma; T. Honda; M. Takahasi; T. Araki; and Y. Nanishi
The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), 02 May 2021

Epitaxial mist chemical vapor deposition growth and characterization of α-In2O3 films on α-Al2O3 substrates
T. Yamaguchi; T. Nagata; S. Takahashi; T. Kiguchi; A. Sekiguchi; T. Onuma; T. Honda; K. Goto; Y. Kumagai; K. Kaneko; and S. Fujita
The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), 02 May 2021

Energy conversion efficiency under different input electrical power conditions in visible-LED-based OWPT system
H. Yokoyama; N. Yosuke; T. Yamaguchi; T. Miyamoto; T. Onuma; and T. Honda
The 3rd Optical Wireless and Fiber Power Transmission Conference 2021 (OWPT2021), 20 Apr. 2021

Deep UV optical properties of high-Mg-content rocksalt-structured MgZnO
T. Onuma; K. Kudo; K. Ishii; M. Ono; Y. Ota; K. Kaneko; T. Yamaguchi; S. Fujita; T. Honda
Materials Research Society, 2021 Spring Meeting, 18 Apr. 2021, [Invited]

顕微ラマンマッピング測定による酸化ガリウム結晶の微細構造評価
19 Mar. 2021

GaN上GaInN膜成長初期のSi層挿入数に対する格子緩和過程の変化
18 Mar. 2021

合成石英基板上に成長した岩塩構造 MgZnO 微結晶の真空紫外域での発光特性
18 Mar. 2021

モノリシック青色マイクロLEDピクセルの製作とフルカラー化の検討
17 Mar. 2021

岩塩構造MgZnO 混晶の電子有効質量の推定
17 Mar. 2021

TEMによるMist CVD法 (0001)α-Al2O3基板上α-In2O3の欠陥解析
16 Mar. 2021

Developments of Semiconductor-based UVC Emitters and Sensors for Sterilization
T. Onuma; T. Yamaguchi; and T. Honda
The 3rd Symposium for Collaborative Research on Energy Science and Technology (SCREST-3rd), 05 Mar. 2021, [Invited]

Impact of hydrochloric acid on the Mist CVD growth of Ga2O3
R. Yamada; S. Takahashi; T. Yamaguchi; T. Onuma; and T. Honda
The 3rd Symposium for Collaborative Research on Energy Science and Technology (SCREST-3rd), 05 Mar. 2021

Impact of Indium Oxide Powder as Source Precursor on alfa-In2O3 Films Grown by Mist CVD
A. Taguchi; S. Takahashi; T. Yamaguchi; T. Onuma; and T. Honda
The 3rd Symposium for Collaborative Research on Energy Science and Technology (SCREST-3rd), 05 Mar. 2021

Characterization of GaInN multi-layers grown on strain-controlled layer by RF-MBE
M. Matsuda; R. Yoshida; K. Tahara; T. Yamaguchi; T. Onuma; and T. Honda
The 3rd Symposium for Collaborative Research on Energy Science and Technology (SCREST-3rd), 05 Mar. 2021

殺菌応用を目指した真空・深紫外線半導体発光材料の開発
27 Jan. 2021, [Invited]

Fabrication of monolithic blue μ-LED pixels and their color conversion by phosphors
H. Chikui; S. Takeda; T. Abe; T. Onuma; T. Yamaguchi; T. Honda
The 19th International Symposium on Advanced Technology (ISAT-19), 14 Jan. 2021

Radiation patterns of MgO and AlN evaluated by angle-resolved cathodoluminescence measurements
Y. Igari; K. Kudo; W. Kosaka; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; and T. Onuma
The 19th International Symposium on Advanced Technology (ISAT-19), 14 Jan. 2021

Parametric study of fabrication processes of micro-LEDs array and characterization of emission properties
S. Takeda; H. Chikui; T. Yamaguchi; T. Onuma; and T. Honda
The 19th International Symposium on Advanced Technology (ISAT-19), 14 Jan. 2021

RF-MBE法による高In組成GaInN/GaInN周期構造の成長と評価
23 Dec. 2020

Mist CVD法における(0001)α-Al2O3基板上In2O3成長に塩酸が与える影響
23 Dec. 2020

窒素イオン注入による酸化ガリウム結晶の光電流スペクトルの変化
23 Dec. 2020

ICP-RIEによるモノリシック青色μ-LEDピクセルの製作
23 Dec. 2020

AlNテンプレート上のAlGaNの分極電場と深紫外線センサー特性の関係
23 Dec. 2020

Designing optically isolated LED arrays embedded in Si Micro-cup Substrates
K. Sato; Y. Iwata; T. Onuma; T. Yamaguchi; T. Honda
International Display Workshops ‘20 (IDW ’20), 10 Dec. 2020

マイクロLEDディスプレイ応用のための透明ポリイミド薄膜の形成
05 Dec. 2020

酸化物半導体MgZnOの結晶成長とサブ200 nmの発光特性
19 Nov. 2020, [Invited]

人にやさしい深紫外線光源の開発
30 Oct. 2020

Comparison of Microstructures in alpha-Ga2O3 and alpha-In2O3 Films Grown on alpha-Al2O3 Substrates by Mist CVD
Y. Hayakawa; S. Ohno; T. Yamaguchi; T. Kiguchi; S.Takahashi; H. Yokoo; T. Onuma; and T. Honda
39th Electronic Materials Symposium, 08 Oct. 2020

Band alignment of MgZnO alloys and the related band offset calculations
Y. Ota; K. Kaneko; T. Onuma; and S. Fujita
39th Electronic Materials Symposium, 08 Oct. 2020

Growth of AlGaN on AlN Template by RF-MBE and Their Spectral Responsivity in Deep UV Spectral Region
M. Hashimoto; N. Tachibana; M. Nakanishi; T. Yamaguchi; T. Honda; and T. Onuma
39th Electronic Materials Symposium, 08 Oct. 2020

Relationship between crystallinity and emission property in RF-MBE growth of GaN
N. Tachibana; M. Hashimoto; T. Yamaguchi; T. Honda; and T. Onuma
39th Electronic Materials Symposium, 08 Oct. 2020

RF-MBE growth and characterization of high-In-content GaInN/GaInN multiple layers
K. Tahara; R. Yoshida; H. Hirukawa; T. Yamaguchi; T. Onuma; and T. Honda
39th Electronic Materials Symposium, 07 Oct. 2020

Deep and Vacuum UV Emission Properties in Rocksalt-structured MgZnO
T.Onuma; K.Kudo; K.Ishii; M.Ono; Y.Ota; K.Kaneko; T.Yamaguchi; S.Fujita; and T.Honda
39th Electronic Materials Symposium, 07 Oct. 2020, [Invited]

GaNのRF-MBE成長における結晶性と発光特性の関係
11 Sep. 2020

RF-MBE成長した高In組成GaInN/ GaInN多重量子井戸における障壁層のIn組成と周期数が発光特性へ及ぼす影響
11 Sep. 2020

GaInN/GaN成長時の格子緩和に対するSiアンチサーファクタントの効果
11 Sep. 2020

溶媒キャスト法を用いたLED素子分離用透明ポリイミド絶縁膜の形成
11 Sep. 2020

酸化ガリウム結晶への窒素イオン注入が分光感度特性に及ぼす影響
09 Sep. 2020

岩塩構造MgZnO薄膜における深紫外PL寿命の評価
09 Sep. 2020

UVC～真空紫外発光を目指すMgZnOの研究
01 Aug. 2020

Optical characteristics of high–indium–content GaInN MQWs grown on different templates by RF–MBE
R. Yoshida; H. Hirukawa; K. Tahara; T. Yamaguchi; T. Onuma; T. Honda
International Conference on Light-Emitting Devices and Their Industrial Applications ’20 (LEDIA ’20), 21 Apr. 2020

Structural analyses of α-In2O3 grown on α-Al2O3 substrates by mist CVD
Y. Hayakawa; S. Ohno; T. Yamaguchi; T. Kiguchi; H. Yokoo; T. Onuma; T. Honda
International Conference on Light-Emitting Devices and Their Industrial Applications ’20 (LEDIA ’20), 21 Apr. 2020

Fabrication of μ-LED pixels and evaluation of luminescent characteristics
H. Chikui; S. Takeda; K. Sato; T. Onuma; T. Yamaguchi; M. Shimizu; T. Takahashi; T. Honda
International Conference on Light-Emitting Devices and Their Industrial Applications ’20 (LEDIA ’20), 21 Apr. 2020

Growth of AlGaN films on AlN template by RF-plasma assisted molecular beam epitaxy
M. Hashimoto; N. Tachibana; T. Honda; T. Yamaguchi; T. Onuma
International Conference on Light-Emitting Devices and Their Industrial Applications ’20 (LEDIA ’20), 21 Apr. 2020

Power Supply Efficiency of Optical Wireless Power Transmission Systems Using Visible LEDs and Silicon Solar Cells
H. Yokoyama; T. Yamaguchi; T. Onuma; R. Yoshida; Y. Ushida; T. Honda
Optical Wireless and Fiber Power Transmission Conference 2020 (OWPT2020), 21 Apr. 2020

RF-MBEサファイア基板窒化時にPBN放電管が与える影響
15 Mar. 2020

ポリイミド薄膜を用いたLED素子分離の検討
14 Mar. 2020

窒素イオン注入酸化ガリウム結晶の光電流スペクトル
13 Mar. 2020

GaInN/GaN 規則配列ナノコラム結晶における活性層の構造と光学特性の関係
13 Mar. 2020

RF-MBE法によるGaN及びAlNテンプレートへのGaN成長にV/III比が及ぼす影響
13 Mar. 2020

岩塩構造MgZnO薄膜の時間分解フォトルミネッセンス分光
12 Mar. 2020

DUV cathodoluminescence in rocksalt-structured MgZnO films
T. Onuma; M. Ono; K. Kudo; K. Ishii; K. Kaneko; S. Fujita; T. Honda
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2020,,OPTO, the optoelectronics, photonic materials and devices conference, 05 Feb. 2020, [Invited]

Epitaxial relationship of Cu3N grown on YSZ(001) substrate by mist CVD method
N. Wakabayashi; R. Takigasaki; T. Yamaguchi; T. Onuma; T. Honda
47th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-47), 22 Jan. 2020

Optical characteristics of high-In-incorporated GaInN MQWs grown by RF-MBE
R. Yoshida; Y. Nakajima; H. Hirukawa; S. Ohno; T. Yamaguchi; T. Onuma; T. Honda
The 18th International Symposium on Advanced Technology (ISAT-18), 13 Dec. 2019

LED miniaturization for monolithic μ-LED using ICP etching
S. Takeda; T. Yanaguchi; T. Onuma; T. Honda
The 18th International Symposium on Advanced Technology (ISAT-18), 13 Dec. 2019

Structural characterization of epitaxial GaInN films by X-ray diffraction
H. Hirukawa; R. Yoshida; T. Yamaguchi; T. Onuma; T. Honda
The 18th International Symposium on Advanced Technology (ISAT-18), 13 Dec. 2019

Microstructural analysis using TEM in GaInN film grown by RF-MBE
S. Ohno; H. Hirukawa; R. Yoshida; T. Yamaguchi; T. Kiguchi; H. Hashimoto; T. Onuma; T. Honda
The 18th International Symposium on Advanced Technology (ISAT-18), 13 Dec. 2019

Toward the Realizaiton of Optical Wireless Power Transmission System Using Visible Light
T. Yamaguchi; H. Hirukawa; H. Yokoyama; S. Ohno; Y. Ushida; T. Onuma; T. Honda
2019 International Symposium on Novel and Sustainable Technology (ISNST2019), 12 Dec. 2019, [Invited]

Mist CVD法によるGa2O3成長に塩酸が与える影響
07 Dec. 2019

Si基板上GaNナノコラム構造への低温層挿入による結晶品質向上の検討
20 Nov. 2019

高品質GaInN薄膜製作に向けたRF-MBE法により成長したGaN薄膜の不純物検討
20 Nov. 2019

RF-MBE法によるGaNテンプレート上へのAlGaN成長におけるGaNバッファ層のV/III比依存性の検討
20 Nov. 2019

分子プレカーサー法を用いたスプレーコートによるZnO 薄膜形成の検討
20 Nov. 2019

Deep UV cathodoluminescence properties of rocksalt-structured MgZnO alloys
T.Onuma; M.Ono; K.Kudo; K.Ishii; K.Kaneko; S.Fujita; and T.Honda
The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), 13 Nov. 2019, [Invited]

VUV Exciton Emission Spectra of MgO Single Crystals
K.Kudo; S.Hoshi; M.Ono; Y.Fujiwara; K.Kaneko; T.Yamaguchi; T.Honda; S.Fujita; and T.Onuma
The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), 12 Nov. 2019

Optical-isolation of micro-LED pixels integrated in Si micro-cup substrate
K.Sato; Y.Kamei; R.Nawa; S.Aikawa; Y.Usida; T.Onuma; T.Yamaguchi; and T.Honda
The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), 11 Nov. 2019

Red Emitting InGaN-based Ordered Nanocolumns Exhibiting Photonic Crystal Effects at 671 nm
K.Takimoto; K.Narita; K.Yoshida; T.Oto; T.Yamaguchi; T.Honda; T.Onuma; R.Togashi; I.Nomura; and K.Kishino
The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), 11 Nov. 2019

InGaN/GaNハニカム構造ナノコラム結晶の成長と評価
31 Oct. 2019

Growth and optical characterization of ultra-wide bandgap semiconductors for solid-state DUV and VUV light emitters
N.Tachibana; K.Kudo; T.Onuma
The 6th Innovation Forum of Advanced Engineering and Education (IFAEE6), 30 Oct. 2019

RF-MBEによるGaInN薄膜の成長温度特性
29 Oct. 2019

Optical characteristics of high In composition GaInN MQWs grown by RF-MBE
R. Yoshida; Y. Nakajima; H. Hirukawa; S. Ohno; T. Yamaguchi; T. Onuma; T. Honda
38th Electronic Materials Symposium, 10 Oct. 2019

Epitaxial relationship in Cu3N layer grown on c-plane sapphire substrate by Mist CVD
N. Wakabayashi; M. Takahashi; T. Yamaguchi; T. Onuma; T. Honda
38th Electronic Materials Symposium, 10 Oct. 2019

Impact of hydrochloric acid on mist CVD growth of GIO ternary alloys
S. Takahashi; K. Rikitake; T. Yamaguchi; H. Nagai; M. Sato; T. Onuma; T. Honda
38th Electronic Materials Symposium, 09 Oct. 2019

Comparative study on DUV emission properties of rocksalt-structured MgxZn1-xO alloys
K. Kudo; K. Ishii; M. Ono; Y. Fujiwara; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; T. Onuma
38th Electronic Materials Symposium, 09 Oct. 2019

Characterization of MgZnO Thin Films for Deep Ultraviolet Light Emitters
S. Fujita; S. Hoshi; K. Ishii; M. Ono; K. Kudo; T. Onuma; T. Honda; and K. Kaneko
The 19th International Conference on II-VI Compounds and Related Materials, 02 Oct. 2019, [Invited]

MgO薄膜のホモエピタキシャル成長および光学特性
20 Sep. 2019

RF-MBE成長した高In組成GaInN MQWsの光学特性
18 Sep. 2019

MgO単結晶の真空紫外線領域のカソードルミネセンススペクトル
18 Sep. 2019

Observation of deep UV cathodoluminescence from rocksalt-structured MgZnO alloys
T. Onuma; M. Ono; K. Kudo; K. Ishii; K. Kaneko; S. Fujita; T. Hond
The 4th International Workshop on Ultraviolet Materials and Devices (IWUMD4), 10 Sep. 2019, [Invited]

スプレー塗布によるMgZnO薄膜形成の検討
28 Aug. 2019

16x16array構造のSiマイクロカップ基板を用いたマイクロLEDディスプレイ実現に向けた製作検討
28 Aug. 2019

RF-MBEによりGaN/alfa-Al2O3上に異なる温度で成長させたGaInNの構造解析
28 Aug. 2019

ミストCVD法により成長した各種基板上In2O3の結晶構造と電気的特性評価
28 Aug. 2019

誘導結合プラズマを用いたモノリシック型-LEDの製作検討
28 Aug. 2019

RF-MBE法により成長したN極性GaN薄膜の不純物検討
28 Aug. 2019

RF-MBEにより成長させたInGaN/GaNハニカム構造ナノコラム結晶の光学特性評価
28 Aug. 2019

RF-MBEにより成長したGa極性GaN薄膜の電気的特性評価
28 Aug. 2019

Si基板上GaNナノコラム構造製作における低温層挿入による結晶形状への影響
28 Aug. 2019

Sapphire基板上GaNのPDS測定による価電子帯構造及び透過率測定における相関性について
28 Aug. 2019

AlGaN成長におけるバッファGaN成長条件の検討
27 Aug. 2019

RF-MBE成長した高In組成GaInN周期構造の光学特性
27 Aug. 2019

RS-MgZnO/MgOの量子閉じ込め効果の検討
27 Aug. 2019

可視光給電デバイスのためのMBEによるGaInN成長温度特性
27 Aug. 2019

Mist CVD法により成長したGIO三元混晶の塩酸濃度依存特性
27 Aug. 2019

ミストCVD法によるCu3Nエピタキシ成長と構造評価
27 Aug. 2019

Optical Transitions in beta-Ga2O3 Single Crystal Studied by Electroreflectance Measurements
T.Onuma; K.Tanaka; K.Sasaki; T.Yamaguchi; T.Honda; A.Kuramata; S.Yamakoshi; and M.Higashiwaki
The 3rd International Workshop on Gallium Oxide and Related Materials, 15 Aug. 2019

In Situ XRD RSM Measurements in MBE Growth of GaInN at Different Temperatures
T. Yamaguchi; T. Sasaki; M. Takahasi; S. Ohno; T. Araki; Y. Nanishi; T. Onuma; T. Honda
13th International Conference On Nitride Semiconductors (ICNS-13), 11 Jul. 2019

Fabrication of LED Pixels of 16 × 16 Array Structure Using Si Micro-Cup Substrate
K. Sato; Y. Kamei; R. Nawa; S. Aikawa; Y. Usida; T. Onuma; T. Yamaguchi; T. Honda
13th International Conference On Nitride Semiconductors (ICNS-13), 09 Jul. 2019

Strain Relaxation in Al-rich AlxGa1-xN Films Grown by RF Plasma-Assisted Molecular Beam Epitaxy
N. Tachibana; T. Onuma; T. Honda; T. Yamaguchi
13th International Conference On Nitride Semiconductors (ICNS-13), 09 Jul. 2019

Structural and electrical properties of In2O3 grown by mist CVD on various substrates
H. Yokoo; T. Kobayashi; K. Rikitake; T. Yamaguchi; T. Onuma; T. Honda
The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), 09 Jul. 2019

Structural Analyses of GaInN Films Grown at Different Temperatures on (0001)GaN/alfa-Al2O3 Templates by RF-MBE
S. Ohno; T. Yamaguchi; T. Araki; T. Honda; T. Onuma; H. Hashimoto; Y. Nakajima; H. Hirukawa; R. Yoshida
13th International Conference On Nitride Semiconductors (ICNS-13), 08 Jul. 2019

Growth and Structural Characterization of Cu3N by Mist CVD
N. Wakabayashi; M. Takahashi; T. Yamaguchi; H. Nagai; M. Sato; T. Onuma; T. Honda
The 2nd Symposium for Collaborative Research on Energy Science and Technology (SCREST-2nd), 05 Jul. 2019

XRD-RSM Measurements of GaInN Films Grown at Different Temperatures by RF-MBE
H. Hirukawa; R. Yoshida; T. Yamaguchi; T. Onuma; T. Honda
The 2nd Symposium for Collaborative Research on Energy Science and Technology (SCREST-2nd), 05 Jul. 2019

Vacuum Ultraviolet Light Emission from MgZnO-Based Thin Films and Quantum Wells
K. Kaneko; K. Ishii; M. Ono; K. Kudo; T. Onuma; T. Honda; S. Fujita
61th Electronic Materials Conference (EMC-61), 27 Jun. 2019

ミストCVD法によるCu3Nエピタキシャル成長
14 Jun. 2019

Mist CVD法によるGIO混晶成長に塩酸が与える影響
14 Jun. 2019

規則配列InGaNナノコラムを用いた赤色域発光結晶
14 Jun. 2019

Observation of Electroreflectance Spectra of beta-Ga2O3 Single Crystal
T. Onuma; K. Tanaka; K. Sasaki; T. Yamaguchi; T. Honda; A. Kuramata; S. Yamakoshi; and M. Higashiwaki
Compound Semiconductor Week 2019 (CSW 2019), 21 May 2019

Growth and Deep UV Luminescent Properties of Rocksalt-Structured Ultra-Wide Bandgap MgZnO on MgO Substrates
K. Kaneko; K. Ishii; M. Ono; K. Kudo; T. Onuma; T. Honda; and S. Fujita
Compound Semiconductor Week 2019 (CSW 2019), 21 May 2019

Electrical and structural properties of Sn-doped alfa-Ga2O3 thin films grown by mist chemical vapor deposition
S. Mochizuki; T. Yamaguchi; K. Rikitake; T. Onuma; and T. Honda
Compound Semiconductor Week 2019 (CSW 2019), 21 May 2019

VUV Cathodoluminescence Spectra of Rocksalt-structured MgZnO/MgO Quantum Wells
K. Kudo; K. Ishii; M. Ono; Y. Fujiwara; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; and T. Onuma
Compound Semiconductor Week 2019 (CSW 2019), 20 May 2019

Cathodoluminescence properties of Rocksalt-structured MgZnO/MgO Quantum Wells for VUV Light Emitter
K. Kudo; K. Ishii; M. Ono; Y. Fujiwara; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; and T. Onuma
International Conference on Light-Emitting Devices and Thier Industrial Applications ’19 (LEDIA ’19), 24 Apr. 2019

Fabrication of micro-LED display of 16 × 16 array structure using Si micro-cup substrate
K. Sato; Y. Kamei; R. Nawa; S. Aikawa; Y. Ushida; T. Onuma; T. Yamaguchi; and T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’19 (LEDIA ’19), 24 Apr. 2019

Fabrication of monolithic micro-LED using inductively coupled plasma etching
S. Takeda; T. Yamaguchi; T. Onuma; T. Takahashi; M. Shimizu; and T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’19 (LEDIA ’19), 24 Apr. 2019

Growth of AlxGa1-xN Films by RF Plasma-assisted Molecular Beam Epitaxy for Deep UV Optical Devices
N. Tachibana; T. Yamaguchi; T. Honda; and T. Onuma
International Conference on Light-Emitting Devices and Thier Industrial Applications ’19 (LEDIA ’19), 24 Apr. 2019

Structural analyses using TEM and XRD of GaInN films grown on GaN templates by RF-MBE
S. Ohno; T. Yamaguchi; H. Hirukawa; T. Araki; H. Hashimoto; T. Onuma; and T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’19 (LEDIA ’19), 24 Apr. 2019

Prototype optical wireless power teansmission system using bule LD as light source and LED as photovoltaic receiver
H. Hirukawa; T. Yamaguchi; Y. Ushida; T. Onuma; and T. Honda
Optical Wireless and Fiber Power Transmission Conference 2019 (OWPT2019), 24 Apr. 2019

光熱偏向分光法によるGaN自立基板上ホモエピタキシャル層の評価
12 Mar. 2019

RF-MBE法GaInNヘテロエピタキシャル成長における放射光その場X線回折測定
11 Mar. 2019

RF-MBEより成長した高In組成GaInNの成長温度特性
11 Mar. 2019

酸化ガリウム結晶における電界変調反射スペクトルの観測
11 Mar. 2019

岩塩構造MgZnO/MgO量子井戸における量子閉じ込め効果
11 Mar. 2019

マイクロLEDチップの集積化技術の検討と技術課題
29 Jan. 2019

Toward fabrication of GaInN-based devices: Epitaxial growth and characterization of GaInN by RF-MBE
T.Yamaguchi; Y.Nakajima; H.Hirukawa; R.Yoshida; T.Onuma; and T.Honda
The 1st Symposium for Collaborative Research on Energy Science and Technology (SCREST-1st), 10 Jan. 2019, [Invited]

Efficient 210-250 nm Deep UV Near-Band-Edge Emission from Rocksalt-Structured MgxZn1-xO Films
T.Onuma; M.Ono; K.Ishii; K.Kaneko; S.Fujita; and T.Honda
28th Annual Meeting of MRS-J, 19 Dec. 2018

マイクロLEDディスプレイの実現のためのブラックマトリクス原料の比較検討
08 Dec. 2018

Relationship between Relaxation ratio and growth temperature of GaInN by RF-MBE
Y. Nakajima; T.Honda; T.Yamaguchi; and T.Onuma
Pacific Rim Symposium on Surfaces, Coatings and Interfaces (Pacsurf2018), 05 Dec. 2018

Effect of alfa-(AlxGa1-x)2O3 Overgrowth on MSM-Type alfa-Ga2O3 Ultraviolet Photodetectors Grown by Mist CVD
K.Rikitake; T.Yamaguchi; T.Onuma; and T.Honda
Pacific Rim Symposium on Surfaces, Coatings and Interfaces (Pacsurf2018), 05 Dec. 2018

Carbon-nanotube Dispersed Ga2O3 Films for UV Transparent Electrodes Fabricated by Molecular Precursor Method
T.Honda; Y.Takahashi; R.Yoshida; C.Mochizuki; H.Nagai; T.Onuma; T.Yamaguchi; and M.Sato
Pacific Rim Symposium on Surfaces, Coatings and Interfaces (Pacsurf2018), 03 Dec. 2018

Fabrication of rocksalt-structured MgZnO/MgO layered structures and their DUV light emission properties
K.Ishii; M.Ono; T.Onuma; K.Kaneko; and S.Fujita
Materials Research Society, 2018 Fall Meeting & Exhibit, 29 Nov. 2018

μ-LEDディスプレイの実現に向けたμ-LEDアレイ構造の製作
29 Nov. 2018

岩塩構造MgxZn1-xO薄膜における深紫外線NBE発光特性の解析
29 Nov. 2018

各種基板上に成長したIn2O3の結晶構造と電気的特性評価
29 Nov. 2018

Epitaxial Growth of Cu3N Films on (0001)Al2O3 Substrates by Mist Chemical Vapor Deposition
T.Yamaguchi; H.Itoh; M.Takahashi; H.Nagai; T.Onuma; T.Honda; and M.Sato
The 17th International Symposium on Advanced Technology (ISAT-17), 14 Nov. 2018

Fabrication of µ-LED arrays toward future realization of µ-LED display
R.Nawa; STakeda; Y.Kamei; T.Onuma; T.Yamaguchi; and T.Honda
The 17th International Symposium on Advanced Technology (ISAT-17), 14 Nov. 2018

Analysis of Deep Ultraviolet Emission Properties in Rocksalt-structured MgxZn1-xO Films
M.Ono; K.Ishii; K.Kaneko; T.Yamaguchi; T.Honda; S.Fujita; and T.Onuma
The 17th International Symposium on Advanced Technology (ISAT-17), 14 Nov. 2018

Evaluation of Al2O3 /n-, p-GaN samples by photothermal deflection spectroscopy
K.Fukuda; Y.Asai; L.Sang; A.Yoshigoe; A.Uedono; T.Onuma; T.Yamaguchi; T.Honda; and M.Sumiya
International Workshop on Nitride Semiconductors (IWN 2018), 13 Nov. 2018

GaInN growth by RF-MBE for underlying layers in red LEDs
Y.Nakajima; K.Uehara; T.Yamaguchi; T.Onuma; and T.Honda
International Workshop on Nitride Semiconductors (IWN 2018), 13 Nov. 2018

Recent Progress in solid state physics Onuma labratory
Y.Kamei; K.Kudo; N.Tachibana; K.Tanaka; Y.Fujiwara; Y.Chunobayashi; R.Nawa; M.Ono; and T.Onuma
The 5th Innovation Forum of Advanced Engineering and Education (IFAEE5), 01 Nov. 2018

マイクロLEDチップの集積化技術の検討と技術課題
15 Oct. 2018

PDS measurement for III-V nitride samples ~InxGa1-xN, ion-implanted GaN and MOS structure~
K.Fukuda; T.Onuma; T.Yamaguchi; T.Honda; and M.Sumiya
37th Electronic Materials Symposium, 12 Oct. 2018

Fabrication of double Schottky type photodetector using corundum-structured gallium oxide
K.Rikitake; T.Yamaguchi; T.Onuma; and T.Honda
37th Electronic Materials Symposium, 11 Oct. 2018

Fabrication of rocksalt-MgZnO/MgO layered structure and the characteristic of DUV light emission
K.Ishii; M.Ono; T.Onuma; K.Kaneko; and S.Fujita
37th Electronic Materials Symposium, 10 Oct. 2018

Growth of Cu3N Films by mist Chemical Vapor Deposition
T.Yamaguchi; H.Itoh; M.Takahashi; T.Onuma; H.Nagai; T.Honda; M.Sato
2018 International Symposium on Novel and Sustainable Technology (ISNST2018), 05 Oct. 2018, [Invited]

岩塩構造MgZnO/MgO積層構造の作製と深紫外発光
20 Sep. 2018

光熱偏向分光法によるMgイオン注入GaN層の評価
19 Sep. 2018

Al2O3/n-, p-GaN構造の光熱偏向分光法による評価
19 Sep. 2018

Bandgap fluctuation in rocksalt-structured MgxZn1-xO alloys
T.Onuma; M.Ono; K.Ishii; K.Kaneko; T.Yamaguchi; S.Fujita; and T.Honda
The 10th International Workshop on ZnO and Related Materials (IWZnO 2018), 13 Sep. 2018

Excitation density and temperature dependence of deep ultraviolet cathodoluminescence in rocksalt-structured MgxZn1-xO
M.Ono; K.Ishii; K.Kaneko; T.Yamaguchi; T.Honda; S.Fujita; and T.Onuma
The 10th International Workshop on ZnO and Related Materials (IWZnO 2018), 11 Sep. 2018

In situ XRD RSM Measurements in MBE Growth of GaInN on InN
T.Yamaguchi; T.Sasaki; M.Takahasi; T.Onuma; T.Honda; T.Araki; Y. Nanishi
20th International Conference on Molecular Beam Epitaxy (ICMBE 2018), 04 Sep. 2018

光熱偏向分光法によるイオン注入したGaNの評価
30 Aug. 2018

岩塩構造MgxZn1-xO薄膜における深紫外線発光メカニズム
29 Aug. 2018

水溶液スプレー法によるZnO薄膜製作検討
29 Aug. 2018

赤色LED製作に向けたRF-MBE法によるSi基板上自己形成GaNナノコラム構造の製作検討
29 Aug. 2018

10×10アレイ構造Siマイクロカップ基板を用いたμ-LEDディスプレイの製作
29 Aug. 2018

ミストCVD法によるα-In2O3の結晶成長と電気的特性評価
29 Aug. 2018

RF-MBE法を用いたGaInNの成長温度と緩和率の関係検討
28 Aug. 2018

深紫外光検出器のためのGa2O3薄膜のミストCVD成長
28 Aug. 2018

Evaluation of Structural Disorder and In-Gap States of III-V nitrides by Photothermal Deflection Spectroscopy
M.Sumiya; K.Fukuda; Y.Nakano; S.Ueda; L.Sang; H.Iwai; T.Yamaguchi; T.Onuma; T.Honda
The 7th International Symposium on Growth of III-Nitrides (ISGN-7), 09 Aug. 2018, [Invited]

酸化ガリウム結晶の光学評価とデバイス応用
25 Jul. 2018, [Invited]

Growth of Rocksalt-Structured MgZnO Thin-Films and Their Optical Properties
K.Ishii; M.Ono; T.Onuma; K.Kaneko; S.Fujita
60th Electronic Materials Conference (EMC-60), 28 Jun. 2018

Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy
M.Sumiya; K.Fukuda; S.Takashima; T.Yamaguchi; T.Onuma; T.Honda; A.Uedono:
The 19th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-19), 07 Jun. 2018

Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping
T.Onuma; Y.Nakata; K.Sasaki; T.Masui; T.Yamaguchi; T.Honda; A.Kuramata; S.Yamakoshi; M.Higashiwaki
Compound Semiconductor Week 2018 (CSW 2018), 01 Jun. 2018

Spectroscopic ellipsometry study on p-type NiO films
M.Ono; K.Sasaki; T.Yamaguchi; M.Higashiwaki; A.Kuramata; S.Yamakoshi; T.Honda; T.Onuma
International Conference on Light-Emitting Devices and Thier Industrial Applications ’18 (LEDIA ’18), 27 Apr. 2018

Fabrication of 10x10 array structure of micro-LED display using Si micro-cup substrate
R.Nawa; T.Onuma; T.Yamaguchi; T.Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’18 (LEDIA ’18), 26 Apr. 2018

岩塩構造MgxZn1-xOの吸収端の観測と電子状態計算
20 Mar. 2018

岩塩構造MgxZn1-xOにおける深紫外線カソードルミネセンスの温度および励起密度依存性
20 Mar. 2018

III-V族窒化物の価電子帯構造およびギャップ内準位の評価
20 Mar. 2018

イオン注入したGaNの光熱偏向分光法による評価
20 Mar. 2018

10×10 Siマイクロカップ基板でのμ-LED集積化
20 Mar. 2018

窒素ドープ酸化ガリウム薄膜における青色発光の強度変化
20 Mar. 2018

alfa-Ga2O3を用いたダブルショットキー型光検出器の製作
19 Mar. 2018

放射光X線回折測定を用いたGaInN/InN成長のその場観察～InN解離温度領域での振る舞い～
18 Mar. 2018

岩塩構造MgZnO薄膜の成長と光物性
18 Mar. 2018

放射光を活用したIn 系窒化物半導体成長中のその場観察
12 Mar. 2018

Influence of interface state and band bending on In and N polar InN from Angle-resolved XPS
Y.Nakajima; T.Onuma; T.Yamaguchi; T.Honda
45th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-45), 14 Jan. 2018

コランダム構造酸化ガリウムソーラーブラインド光検出器の開発
09 Dec. 2017

ミストCVD法により成長したIn2O3薄膜を用いたTFT製作検討
09 Dec. 2017

Growth of Ga2-xSnxO3 Films by Mist Chemical Vapor Deposition
K.Rikitake; T.Kobayashi; T.Yamaguchi; T.Onuma; T.Honda
Materials Research Society, 2017 Fall Meeting & Exhibit, 30 Nov. 2017

Crystal Structure Control in Epitaxial Growth of In2O3 by Mist CVD
T.Kobayashi; T.Yamaguchi; T.Onuma; T.Honda
Materials Research Society, 2017 Fall Meeting & Exhibit, 30 Nov. 2017

XPS spectra of Ga2O3, In2O3 and their alloys fabricated by molecular precursor method
T.Honda; Y.Takahashi; T.Onuma; T.Yamaguchi; H.Nagai; and M.Sato
24th International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 24), 24 Nov. 2017, [Invited]

Relationship between Temperature and Growth Rate of Ga2O3, In2O3 and Their Alloys in the Growth of Mist CVD
T.Yamaguchi; K.Tanuma; T.Kobayashi; H.Nagai; M.Sato; T.Onuma; T.Honda
4th International Conference on Advanced Electromaterials (ICAE2017), 24 Nov. 2017

Deep-UV emission properties of rocksalt-structured MgxZn1-xO Films Grown on MgO (001) Substrates
M.Ono; K.Ishii; T.Uchida; R.Jinno; K.Kaneko; T.Yamaguchi; T.Honda; S.Fujita; and T.Onuma
36th Electronic Materials Symposium, 09 Nov. 2017

Study on growth of high quality MgZnO films on MgO substrates for DUV light emission
K.Ishii; T.Onuma; T.Uchida; R.Jinno; K.Kaneko; and S.Fujita
36th Electronic Materials Symposium, 09 Nov. 2017

Angle-resolved XPS spectra of InN/GaN grown by DERI method
Y.Nakajima; T.Onuma; T.Yamaguchi; and T.Honda
36th Electronic Materials Symposium, 09 Nov. 2017

MSM-type solar-blind photodetector with alfa-Ga2O3 film grown by mist CVD
K.Rikitake; T.Kobayashi; T.Yamaguchi; T.Onuma; and T.Honda
36th Electronic Materials Symposium, 08 Nov. 2017

Effect of low temperature buffer layer in mist CVD growth of In2O3 on alfa-Al2O3 substrate
T.Kobayashi; T.Yamaguchi; T.Onuma; and T.Honda
36th Electronic Materials Symposium, 08 Nov. 2017

Near surface band bending in InN films grown by DERI method
Y.Nakajima; K.Uehara; T.Onuma; T.Yamaguchi; and T.Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Fabrication of Si micro-cup substrate and its application for integration of micro-LEDs
R.Nawa; T.Onuma; T.Yamaguchi; and T.Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Origin of free holes and visible light absorption in p-type NiO films
M.Ono; T.Onuma; K.Sasaki; H.Nagai; T.Yamaguchi; M.Higashiwaki; A.Kuramata; S.Yamakoshi; M.Sato; and T.Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Bandgap Engineering of α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition
K.Rikitake; T.Yamaguchi; T.Onuma; and T.Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Fabrication of TFT using amorphous In2O3 thin film by mist CVD
T.Kobayashi; K.Sawamoto; S.Aikawa; T.Yamaguchi; T.Onuma; and T.Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Formation of Black Matrix for Realization of Micro-LED Display
Y.Chunobayashi; R.Nawa; Y.Takahashi; H.Matsuura; T.Yamaguchi; T.Onuma; and T.Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Unintentionally Doped Impurities in GaN Layer Grown by RF-MBE
D.Taka; T.Yamaguchi; T.Onuma; and T.Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Photothermal Deflection Spectra of Gallium indium nitride layers grown by MOVPE
K.Fukuda; T.Onuma; L.Sang; T.Yamaguchi; T.Honda; and M.Sumiya
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Impact of mask materials on dry etching of GaN using ICP-RIE
H.Matsuura; T.Onuma; T.Honda; and T.Yamaguchi
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Near-the surface Fermi level measured In2O3 and Ga2O3 thin films by molecular precursor method
Y.Takahashi; T.Onuma; H.Nagai; T.Yamaguchi; M.Sato; and T.Honda
The 16th International Symposium on Advanced Technology (ISAT-16), 02 Nov. 2017

Outstanding capability of In-situ Monitoring Techniques in RF-MBE Growth of InN and GaInN
T.Yamaguchi; T.Sasaki; M.Takahasi; T.Araki; T.Onuma; T.Honda; and Y.Nanishi
2017 International Symposium on Novel and Sustainable Technology (ISNST2017), 19 Oct. 2017, [Invited]

GaN growth on Al template by MBE for the fabrication of micro displays
T.Honda; Y.Hoshikawa; K.Uehara; T.Onuma and T.Yamaguchi
11th International Symposium on Semiconductor Light Emitting Devices (ISSLED2017), 12 Oct. 2017

深紫外発光受光デバイスの現状と酸化ガリウム系材料受光デバイスの可能性
26 Sep. 2017, [Invited]

Compositional Pulling Effect in Epitaxial Growth of GaInN by RF-MBE
T.Yamaguchi; T.Sasaki; M.Takahasi; T.Araki; T.Onuma; T.Honda; and Y.Nanishi
International Conference on Solid State Devices and Materials (SSDM2017), 21 Sep. 2017

Fabrication of MSM-Type Photodetector Using Sn-Doped α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition
K.Rikitake; T.Kobayashi; T.Yamaguchi; T.Onuma; and T.Honda
International Conference on Solid State Devices and Materials (SSDM2017), 20 Sep. 2017

Cathodoluminescence spectra of Si-doped and Si-implanted β-Ga2O3 single crystals
T.Onuma; K.Sasaki; T.Masui; T.Yamaguchi; T.Honda; A.Kuramata; and M.Higashiwaki
2nd International Workshop on Gallium Oxide and Related Materials, 14 Sep. 2017

Photoresponsivity of alfa-Ga2O3-based deep UV photodetector grown by mist CVD
K.Rikitake; T.Kobayashi; T.Yamaguchi; T.Onuma; and T.Honda
2nd International Workshop on Gallium Oxide and Related Materials, 14 Sep. 2017

低温In2O3バッファ層を用いたalfa-Al2O3基板上In2O3のミストCVD成長
08 Sep. 2017

Ga2-xSnxO膜のミストCVD成長
08 Sep. 2017

シリコンマイクロカップ基板の製作とµ-LEDの集積化の検討
08 Sep. 2017

GaN上およびInN上GaInN成長における成長初期過程の観察
07 Sep. 2017

SiドープとSiイオン注入単結晶酸化ガリウム結晶の光学的特性
07 Sep. 2017

光熱偏向分光法によるGa1-xInxN薄膜の評価
06 Sep. 2017

高品質MgZnO薄膜の成長と深紫外発光に関する研究
05 Sep. 2017

分子プレカーサー法により形成した金属酸化物薄膜の表面近傍フェルミ準位の測定
09 Aug. 2017

RF-MBE法により成長したGaN薄膜中の不純物に関する考察
09 Aug. 2017

赤色LEDに向けたDERI法によるGaInN薄膜のRF-MBE成長検討
09 Aug. 2017

第一原理計算とX線光電子分光法によるp形NiO薄膜の電子構造の解析
09 Aug. 2017

ミストCVD法によるIn2O3薄膜の結晶構造制御
09 Aug. 2017

ミストCVD法によるSn添加Ga2O3成長とそのデバイス応用
09 Aug. 2017

ICP-RIEによるGaNテンプレートのアレイエッチングの製作検討
08 Aug. 2017

素子分離のためのICP-RIEによるエッチング垂直性の検討
08 Aug. 2017

RF-MBE法を用いたDERI法によるInN薄膜成長における極性が与える影響
08 Aug. 2017

光熱偏向分光法を用いたGa1-xInxN薄膜における非発光再結合の検討
08 Aug. 2017

In-situ X-ray Reciprocal Space Mapping Measurements in GaInN growth on GaN and InN by RF-MBE
T.Yamaguchi; T.Sasaki; M.Takahasi; T.Onuma; T.Honda; and Y.Nanishi
12th International Conference On Nitride Semiconductors (ICNS-12), 26 Jul. 2017

MgO基板上MgZnOの断面TEM観察とその発光
15 Jul. 2017

Optical Properties of Ga2O3 Films and Crystals
T.Onuma; S.Saito; K.Sasaki; K.Goto; T.Masui; T.Yamaguchi; T.Honda; A.Kuramata; and M.Higashiwaki
Compund Semiconductor Week 2017 (CSW 2017), 16 May 2017, [Invited]

Relation between electrical and optical properties of p-type NiO films
M.Ono; T.Onuma; R.Goto; K.Sasaki; H.Nagai; T.Yamaguchi; M.Higashiwaki; A.Kuramata; S.Yamakoshi; M.Sato; and T.Honda
Compund Semiconductor Week 2017 (CSW 2017), 16 May 2017

Fabrication of µ-LED array structures using ICP dry-etching
R.Nawa; T.Onuma; T.Yamaguchi; J.-S. Jang; and T.Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’17 (LEDIA ’17), 20 Apr. 2017

Comparison of III-polar and N-polar GaInN films grown by RF-MBE
Y.Nakajima; K.Uehara; T.Yamaguchi; T.Onuma; and T.Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’17 (LEDIA ’17), 20 Apr. 2017

Charge transfer transitions in p-type NiO films studied by optical measurements and X-ray photoelectron spectroscopy
M.Ono; T.Onuma; K.Sasaki; H.Nagai; T.Yamaguchi; M.Higashiwaki; A.Kuramata; S.Yamakoshi; M.Sato; and T.Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’17 (LEDIA ’17), 20 Apr. 2017

Mist CVD growth of Sn-doped Ga2O3 thin films and its device application
K.Rikitake; T.Kobayashi; T.Yamaguchi; T.Onuma; and T.Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’17 (LEDIA ’17), 20 Apr. 2017

単斜晶酸化ガリウム結晶における光学遷移過程
15 Mar. 2017

p形NiO薄膜における電気的特性と光学的特性の関係
14 Mar. 2017

ワイドギャップ半導体の魅力 ～物性物理からデバイス工学まで～
24 Jan. 2017

b-Ga2O3結晶における光学的異方性の解析
13 Jan. 2017

ミストCVD法を用いたCu3N成長
03 Dec. 2016

ミストCVD法を用いたNiO結晶成長
03 Dec. 2016

(0001)a-Al2O3基板上へのGa2-xSnxO3薄膜のミストCVD成長
03 Dec. 2016

Growth and characterization of In2O3 on various substrates by mist CVD
T.Kobayashi; K.Tanuma; T.Yamaguchi; T.Onuma; and T.Honda
Materials Research Society, 2016 Fall Meeting & Exhibit, Symposium, 30 Nov. 2016

Characterization of GaN layers grown on Al templates by RF-MBE
K.Uehara; Y.Hoshikawa; T.Yamaguchi; T.Onuma; and T.Honda
The 15th International Symposium on Advanced Technology (ISAT-15), 10 Nov. 2016

Growth and characterization of bixbite-type In2O3 thin films by mist CVD
T.Kobayashi; K.Tanuma; T.Yamaguchi; T.Onuma; and T.Honda
The 15th International Symposium on Advanced Technology (ISAT-15), 10 Nov. 2016

Fabrication of CNT-doped Ga2O3 Thin Films by Molecular Precursor Method
Y.Takahashi; T.Onuma; H.Nagai; T.Yamaguchi; M.Sato; and T.Honda
The 15th International Symposium on Advanced Technology (ISAT-15), 10 Nov. 2016

Demonstration of monolithic GaN Based UV MOS-LEDs for Flat-Panel Display
H.Matsuura; K.Serizawa; T.Onuma; T.Yamaguchi; and T.Honda
The 15th International Symposium on Advanced Technology (ISAT-15), 10 Nov. 2016

In-situ monitoring in RF-MBE growth of In-based nitrides
T.Yamaguchi; T.Sasaki; M.Takahasi; T.Araki; T.Onuma; T.Honda; and Y.Nanishi
The 15th International Symposium on Advanced Technology (ISAT-15), 10 Nov. 2016

Toward the Growth of Cu3N by mist CVD
M.Takahashi; H.Ito; T.Yamaguchi; H.Nagai; T.Onuma; M.Sato; and T.Honda
The 15th International Symposium on Advanced Technology (ISAT-15), 10 Nov. 2016

Al薄膜上GaN成長における低温GaN緩衝層挿入の影響
07 Nov. 2016

パルスインジェクショ法を用いたCu2O結晶成長
07 Nov. 2016

Temperature-Dependent Cathodoluminescence Spectra of Rocksalt MgxZn1-xO films grown by Mist Chemical Vapor Deposition Method
T.Onuma; K.Tsumura; K.Kaneko; R.Nawa; M.Ono; T.Uchida; R.Jinno; T.Yamaguchi; S.Fujita; and T.Honda
The 9th International Workshop on ZnO and Related Materials (IWZnO 2016), 01 Nov. 2016

Relation between electrical and optical properties in p-type NiO
M.Ono; T.Onuma; R.Goto; K.Sasaki; H.Nagai; T.Yamaguchi; M.Higashiwaki; A.Kuramata; S.Yamakoshi; M.Sato; and T.Honda
The 3rd Innovation Forum of Advanced Engineering and Education (IFAEE3), 01 Nov. 2016

Fabrication of Vertical-Injection Type GaN-Based MIS Diodes with Near UV Transparent Oxide Electrodes
T.Honda; S.Fujioka; T.Onuma; T.Yamaguchi; H.Nagai; and M.Sato
International Workshop on Nitride Semiconductors (IWN 2016), 02 Oct. 2016

Local Structural Analysis around In Atoms in Al0.82In0.18N alloy by Using X-Ray Absorption Fine-Structure Measurements
R.Seiki; D.Komori; K.Ikeyama; T.Ina; T.Onuma; T.Miyajima; T.Takeuchi; S.Kamiyama; M.Iwaya; and I.Akasaki
International Workshop on Nitride Semiconductors (IWN 2016), 02 Oct. 2016

Deep-ultraviolet luminescence in rocksalt-structured Mg1-xZnxO thin films on MgO substrates
K.Kaneko; K.Tsumura; T.Onuma; T.Uchida; R.Jinno; T.Yamaguchi; T.Honda; and S.Fujita
European Materials Research Society, 2016 Fall Meeting, 19 Sep. 2016

RF-MBE法による低温GaN緩衝層を挿入したAl薄膜上GaN成長検討
16 Sep. 2016

b-Ga2O3薄膜と単結晶の光学定数の比較
16 Sep. 2016

岩塩構造Mg1−xZnxO薄膜の深紫外発光
15 Sep. 2016

X線吸収微細構造測定によるAl0.82In0.18Nの局所構造解析
13 Sep. 2016

Observation of exciton-LO-phonon interaction in β-Ga2O3 single crystals
T.Onuma; S.Saito; K.Sasaki; K.Goto; T.Masui; T.Yamaguchi; T.Honda; A.Kuramata; and M.Higashiwaki
German-Japanese Gallium Oxide Technology Meeting 2016 (GJGOTM2016), 09 Sep. 2016

Impact of GaN low-temperature buffer layer on GaN growth on Al templates
Y.Hoshikawa; Y.Suzuki; K.Uehara; T.Onuma; T.Yamaguchi; and T.Honda
The 19th International Conference on Molecular Beam Epitaxy (MBE2016), 04 Sep. 2016

窒化物系面発光レーザに用いられた混晶半導体Al0.82In0.18NにおけるIn原子近傍の局所構造と光学特性との関係
03 Sep. 2016

Mist CVD法によるIn2O3薄膜の結晶成長
09 Aug. 2016

ミストCVD法を用いたCu2O薄膜成長
09 Aug. 2016

銀分散亜鉛薄膜によるプラズモン共鳴放出
09 Aug. 2016

RF-MBE法を用いたAl薄膜上GaN成長における低温GaNバッファ層挿入の影響
09 Aug. 2016

MOVPE法で成長したGaN薄膜におけるバッファ層堆積後の昇温時間とバッファ層膜厚の影響
09 Aug. 2016

分子プレカーサー法を用いたMgO添加GIO薄膜製作検討
09 Aug. 2016

プラズマ生成条件を考慮したRF-MBE法によるAlInN薄膜成長
09 Aug. 2016

Strain Relaxation Analysis Using In-situ X-ray Reciprocal Space Mapping Measurements in RF-MBE Growth of GaInN
T.Yamaguchi; T.Sasaki; M.Takahasi; T.Onuma; T.Honda; and Y.Nanishi
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), 07 Aug. 2016

Mist-CVD-Grown Crystalline In2O3 Thin-Film Transistors with Low Off-State Current
S.Aikawa; K.Tanuma; T.Kobayashi; T.Yamaguchi; T.Onuma; and T.Honda
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), 07 Aug. 2016

Rock salt型MgZnO薄膜の成長とその深紫外発光特性
30 Jul. 2016

Effects of GaN low-temperature buffer layer on GaN surface flatness grown on Al templates
Y.Hoshikawa; Y.Suzuki; K.Uehara; T.Onuma; T.Yamaguchi; and T.Honda
35th Electronic Materials Symposium, Moriyama, 06 Jul. 2016

Mist CVD growth of In2O3 on various substrates
T.Kobayashi; K.Tanuma; T.Yamaguchi; T.Onuma; and T.Honda
35th Electronic Materials Symposium, Moriyama, 06 Jul. 2016

Deep-ultraviolet luminescence in rocksalt- structured Mg1-xZnxO thin films
K.Kaneko; K.Tsumura; T.Onuma; T.Uchida; R.Jinno; T.Yamaguchi; T.Honda; and S.Fujita
35th Electronic Materials Symposium, 06 Jul. 2016

Surface plasmon resonant emission from Ag dispersed ZnO films fabricated by molecular precursor method
D.Taka; T.Onuma; T.Shibukawa; H.Nagai; T.Yamaguchi; J-.S.Jang; M.Sato; and T.Honda
The 43rd International Symposium on Compound Semiconductors (ISCS 2016), 26 Jun. 2016

Anisotropic optical constants in b-Ga2O3 single crystal
T.Onuma; S.Saito; K.Sasaki; T.Masui; T.Yamaguchi; T.Honda; A.Kuramata; and M.Higashiwaki
58th Electronic Materials Conference (EMC-58), 23 Jun. 2016

Optical properties of ZnO films dispersed with Ag nanocrystals fabricated by molecular precursor method
D.Taka; T.Onuma; T.Shibukawa; H.Nagai; T.Yamaguchi; J-.S.Jang; M.Sato; and T.Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’16 (LEDIA ’16), 19 May 2016

Mist CVD growth of In2O3 films on (0001)alfa-Al2O3 substrates and (0001)GaN templates
T.Kobayashi; K.Tanuma; T.Yamaguchi; T.Onuma; and T.Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’16 (LEDIA ’16), 19 May 2016

β-Ga2O3結晶における励起子-LOフォノン相互作用
21 Mar. 2016

(0001)α-Al2O3基板上および(0001)GaNテンプレート上へのIn2O3膜のミストCVD成長
19 Mar. 2016

分子プレカーサー法を用いたIn-Ga-Mg-O薄膜製作検討
19 Mar. 2016

分子プレカーサー法で製作した銀分散ZnO薄膜の光学的特性
19 Mar. 2016

Valence band structure of monoclinic gallium oxide studied by polarized optical measurements
T.Onuma; S.Saito; K.Sasaki; K.Goto; T.Masui; T.Yamaguchi; T.Honda; and M.Higashiwaki
The Collaborative Conference on Crystal Growth 2015 (3CG 2015), 15 Dec. 2015

Technical issues of GaInN growth with high indium composition for LEDs
T.Honda; T.Yamaguchi; and T.Onuma
The Collaborative Conference on Crystal Growth 2015 (3CG 2015), 15 Dec. 2015

Epitaxial growth of GaInN by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
T.Yamaguchi; T.Honda; T.Onuma; T.Sasaki; M.Takahasi; T.Araki and Y.Nanishi
第25回日本MRS年次大会, 09 Dec. 2015

Study of nitridation conditions of Al layer for GaN growth by RF-MBE
Y.Hoshikawa; T.Onuma; T.Yamaguchi; and T.Honda
Materials Research Society, 2015 Fall Meeting & Exhibit, 03 Dec. 2015

Growth temperature dependence of Ga2O3 and In2O3 growth rates in Mist CVD
K.Tanuma; T.Yamaguchi; T.Onuma; and T.Honda
Materials Research Society, 2015 Fall Meeting & Exhibit, 02 Dec. 2015

Impact of nitridation on GaN growth on (0001)sapphire with an Al layer as a release layer by RF-MBE
Y.Hoshikawa; S.Osawa; Y.Matsumoto; T.Onuma; T.Yamaguchi; and T.Honda
The 6th International Symposium on Growth of III-Nitrides (ISGN-6), 10 Nov. 2015

Optical Anisotropy in (010) Plane of beta-Ga2O3 Single Crystals
T.Onuma; S.Saito; K.Sasaki; K.Goto; T.Masui; T.Yamaguchi; T.Honda; and M.Higashiwaki
1st International Workshop on Gallium Oxide and Related Materials, 06 Nov. 2015

Measurements of Third-Order Nonlinear Optical Susceptibility of beta-Ga2O3 Single Crystals
S.Saito; M.Ichida; T.Onuma; K.Sasaki; A.Kuramata; N.Sekine; A.Kasamatsu; and M.Higashiwaki
1st International Workshop on Gallium Oxide and Related Materials, 04 Nov. 2015

Growth of alfa-(AlGa)2O3 by mist CVD and evaluation of its thermal stability
M.Takahashi; T.Hatakeyama; T.Onuma; T.Yamaguchi; and T.Honda
1st International Workshop on Gallium Oxide and Related Materials, 04 Nov. 2015

Growth temperature dependence of Ga2O3 growth rate by mist CVD
K.Tanuma; T.Onuma; T.Yamaguchi; and T.Honda
1st International Workshop on Gallium Oxide and Related Materials, 04 Nov. 2015

Fabrication of p-type NiO thin films by molecular precursor method
R.Goto; T.Onuma; T.Yamaguchi; H.Nagai; M.Sato; and T.Honda
1st International Workshop on Gallium Oxide and Related Materials, 04 Nov. 2015

Investigation of in-situ X-ray reciprocal space mapping measurements in GaInN growth on GaN by RF-MBE
M.Sawada; T.Yamaguchi; T.Sasaki; K.Narutani; R.Deki; T.Onuma; T.Honda; M.Takahashi; and Y. Nanishi
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

Impact of nitridation on GaN growth on sapphire with an Al layer as a sacrifice layer by RF-MBE
Y.Hoshikawa; S.Osawa; Y.Matsumoto; T.Onuma; T.Yamaguchi; and T.Honda
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

AR-XPS measurement of AlOx/AlN/GaN heterostructures
D.Isono; S.Takahashi; Y.Sugiura; T.Onuma; T.Yamaguchi; and T.Honda
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

Comprehensive study on GaN and InN etching by inductively coupled plasma reactive ion etching
K.Narutani; T.Yamaguchi; T.Araki; Y.Nanishi; T.Onuma; and T.Honda
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

Fundamental Study on Local Surface Plasmons in Ag-nanocrystallites ZnO films toward Future Applications in Nitride-based LEDs
D.Taka; T.Onuma; T.Shibukawa; H.Nagai; T.Yamaguchi; M.Sato; and T.Honda
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

Mist-CVD Growth of In2O3
T.Kobayashi; K.Tanuma; T.Yamaguchi; T.Onuma; and T.Honda
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

Study on the Phase Transition Temperature of alfa-(AlGa)2O3 Grown by Mist CVD
M.Takahashi; T.Hayakeyama; T.Onuma; T.Yamaguchi; and T.Honda
The 14th International Symposium on Advanced Technology (ISAT-14), 02 Nov. 2015

ICP-RIEによるGaN,GaInN,InNエッチングとGaInN系LED製作への応用
29 Oct. 2015

In-situ X-ray Reciprocal Space Mapping Measurements in GaInN Growth on GaN by RF-MBE
T.Yamaguchi; T.Sasaki; K.Narutani; M.Sawada; R.Deki; T.Onuma; T.Honda; M.Takahasi; and Y.Nanishi
The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015), 07 Oct. 2015

Comprehensive study on inductively coupled plasma reactive ion etching of GaN and InN
K.Narutani; T.Yamaguchi; T.Araki; Y.Nanishi; T.Onuma; and T.Honda
The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015), 07 Oct. 2015

Thermal stability of alfa-(AlGa)2O3 grown by mist CVD
M.Takahashi,T.Hatakeyama,T.Onuma,T.Yamaguchi,and T.Honda
The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015), 07 Oct. 2015

β-Ga2O3結晶の(010)面における光学的異方性
15 Sep. 2015

MgZnO growth on (0001)sapphire by mist chemical vapor deposition
R.Goto; H.Nagai; T.Yamaguchi; T.Onuma; M.Sato; and T.Honda
17th International Conference on II-VI Compounds and Related Materials, 14 Sep. 2015

RF-MBE法によるGaN上GaInN成長におけるその場X線逆格子マッピング測定
14 Sep. 2015

ミストCVD法により製作したα-(AlGa)2O3の熱的安定性
13 Sep. 2015

β-Ga2O3単結晶の光学非線形屈折率測定
13 Sep. 2015

alfa-Ga2O3 and alfa-(AlGa)2O3 Buffer Layers in Growth of GaN
T.Yamaguchi; T.Hatakeyama; K.Tanuma; T.Hirasaki; H.Murakami; T.Onuma; and T.Honda
11th International Conference On Nitride Semiconductors (ICNS-11), 01 Sep. 2015

Estimation of Carrier Density of Widegap Semiconductor β-Ga2O3 Single Crystals by THz Reflectance Measurement
S.Saito; T.Onuma; K.Sasaki; A.Kuramata; N.Sekine; A.Kasamatsu; M.Higashiwaki
40th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 40), 23 Aug. 2015

Fabrication of (Ga, In)2O3-x films on GaN-based LED structures by molecular precursor method for near-UV transparent electrodes
T.Honda; H.Nagai; S.Fujioka; R.Goto; T.Onuma; T.Yamaguchi; and M.Sato
22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22), 14 Aug. 2015

Fabrication of copper thin films using the molecular precursor method
H.Nagai; T.Yamaguchi; T.Onuma; I.Takano; and T.Honda
22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22), 14 Aug. 2015

Study on spontaneous emission in nitride-based LEDs with Ag-nanocrystallites ZnO films fabricated by molecular precursor method
T.Onuma; T.Shibukawa; D.Taka; K.Serizawa; E.Adachi; H.Nagai; T.Yamaguchi; J.-S.Jang; M.Sato; and T.Honda
22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22), 14 Aug. 2015

Growth of Group-III Oxides by Mist Chemical Vapor Deposition and Discussion on Thier Growth Mechanisms
T.Yamaguchi; K.Tanuma; H.Nagai; T.Onuma; T.Honda; and M.Sato
22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22), 14 Aug. 2015

分子プレカーサー水溶液を用いたミスト化学気相成長による酸化亜鉛薄膜製作
09 Aug. 2015

ミストCVD法により製作したα-(AlGa)2O3の熱的安定性
09 Aug. 2015

ICP-RIEによるInNおよびGaN温度依存性エッチング
09 Aug. 2015

RF-MBE法によるSapphire基板上Al犠牲層の窒化処理によるGaN成長の影響
09 Aug. 2015

ミストCVD法を用いたGa2O3成長における成長速度の温度依存性
09 Aug. 2015

RF-MBE法を用いたSapphire基板上GaN成長
09 Aug. 2015

MOCVD法を用いて成長したGaInN薄膜の欠陥評価
08 Aug. 2015

AR-XPS法を用いたAlOX/AlN/GaN構造のバンド構造解析
08 Aug. 2015

RF-MBE法によるGaN上GaInN成長におけるその場X線逆格子マッピング測定
08 Aug. 2015

Growth condition dependence of Ga-In-O films by mist-CVD
K.Tanuma; R.Goto; T.Onuma; T.Yamaguchi; and T.Honda
34th Electronic Materials Symposium, 15 Jul. 2015

Inductively coupled plasma reactive ion etching of GaN and InN
K.Narutani; T.Yamaguchi; T.Araki; Y.Nanishi; T.Onuma; and T.Honda
34th Electronic Materials Symposium, 15 Jul. 2015

THz Time-domain Spectroscopy of Widegap Semiconductor β-Ga2O3 Single Crystals
S.Saito; N.Sekine; A.Kasamatsu; M.Higashiwaki; T.Onuma; K.Sasaki; and A.Kuramata
3rd International Symposium on Microwave/Terahertz Science and Applications (MTSA 2015), 30 Jun. 2015

Determination of Direct and Indirect Bandgap-Energies of beta-Ga2O3 by Polarized Transmittance and Reflectance Spectroscopy
T.Onuma; S.Saito; K.Sasaki; T.Masui; T.Yamaguchi; T.Honda; and M.Higashiwaki
57th Electronic Materials Conference (EMC-57), 24 Jun. 2015

Growth mechanisms of InN and its Alloys using droplet elimination by radical beam irradiation
T.Yamaguchi; T.Araki; T.Onuma; T.Honda; and Y.Nanishi
The Energy Materials Nanotechnology Meeting on Droplets 2015 (EMN 2015), 08 May 2015

Aluminum Growth on Sapphire Substrate with Surface Nitridation by RF-MBE
Y.Hoshikawa; S.Osawa; Y.Matsumoto; T.Yamaguchi; T.Onuma; and T.Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’15 (LEDIA ’15), 22 Apr. 2015

Fundamental Study on Growth of alfa-(AlGa)2O3 Alloys by Mist CVD −A Study on Growth Rate of alfa-Al2O3 Compared with alfa-Ga2O3−
M.Takahashi; T.Hatakeyama; T.Onuma; T.Yamaguchi; and T.Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’15 (LEDIA ’15), 22 Apr. 2015

Optical Anisotropy in beta-Ga2O3 Crystals Grown by Melt-Growth Methods
T.Onuma; S.Saito; K.Sasaki; T.Masui; T.Yamaguchi; T.Honda; and M.Higashiwaki
International Conference on Light-Emitting Devices and Thier Industrial Applications ’15 (LEDIA ’15), 22 Apr. 2015

Ga-In-O薄膜のウェットエッチングプロセス検討
13 Mar. 2015

ワイドギャップ半導体beta-Ga2O3単結晶のテラヘルツ波反射測定によるキャリア密度評価
13 Mar. 2015

ミストCVDによるalfa-(AlGa)2O3混晶成長の基礎検討-alfa-Ga2O3と比較したalfa-Al2O3の成長速度の検討-
13 Mar. 2015

RF-MBE法による窒化サファイア基板上アルミニウム薄膜成長
12 Mar. 2015

beta-Ga2O3結晶の透過と反射スペクトルの偏光依存性
12 Mar. 2015

Growth and doping of In-based nitride semiconductors using DERI method
T.Yamaguchi; T.Araki; T.Onuma; T.Honda; and Y.Nanishi
The 2015 Materials Challenges in Alternative and Renewable Energy Conference (MCARE 2015), 25 Feb. 2015

Fabrication of alfa-(AlGa)2O3 on sapphire substrate by mist CVD
T.Hatakeyama; K.Tanuma; S.Osawa; Y.Sugiura; T.Onuma; T.Hirasaki; H.Murakami; T.Yamaguchi; and T.Honda
10th International Symposium on Semiconductor Light Emitting Devices (ISSLED2014), 16 Dec. 2014

Properties of near-UV transparent Ga-In-O electrode in GaN-based MOS-LED
S.Fujioka; T.Yasuno; T.Onuma; H.Nagai; T.Yamaguchi; M.Sato; and T.Honda
10th International Symposium on Semiconductor Light Emitting Devices (ISSLED2014), 15 Dec. 2014

AR-XPS spectra and band-bending properties of +c, -c and m-GaN surfaces
D.Isono; S.Fujioka; Y.Sugiura; T.Onuma; T.Yamaguchi; and T.Honda
Materials Research Society, 2014 Fall Meeting & Exhibit, 02 Dec. 2014

THz wave Absorption Spectra of Widegap Semiconductor beta-Ga2O3 Single Crystals
S.Saito; T.Onuma; K.Sasaki; A.Kuramata; N.Sekine; A.Kasamatsu; and M.Higashiwaki
Materials Research Society, 2014 Fall Meeting & Exhibit, 01 Dec. 2014

Growth of oxide thin films by mist chemical vapor deposition,-Application of corundum-structured oxides for growth of GaN-
T.Hatakeyama; K.Tanuma; S.Osawa; Y.Sugiura; T.Onuma; T.Yamaguchi; and T.Honda
The 13th International Symposium on Advanced Technology (ISAT13), 14 Nov. 2014

Growth and characterization of Ga-In-O by mist CVD
K.Tanuma; T.Hatakeyama; R.Goto; T.Onuma; T.Yamaguchi; and T.Honda
The 13th International Symposium on Advanced Technology (ISAT13), 14 Nov. 2014

六方晶GaN中に挿入した一分子層InNの構造完全性による影響
13 Nov. 2014

Mist Chemical Vapor Deposition Growth of Ga-In-O films
K.Tanuma; T.Hatakeyama; R.Goto; T.Onuma; T.Yamaguchi; and T.Honda
The 1st Innovation Forum of Advanced Engineering and Education (IFAEE), 01 Nov. 2014

Optical characterization of gallium-indium-oxide wide bandgap semiconductors for future device applications
T.Onuma; C.Mochizuki; H.Nagai; T.Yamaguchi; M.Sato; and T.Honda
The Joint symposia of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE) and the 21st International SPACC (The Society of Pure and Applied Coordination Chemistry) Symposium, 01 Nov. 2014

Interface reaction between Al and N atoms in GaN growth on Al by RF-MBE
S.Osawa; T.Yamaguchi; T.Onuma; and T.Honda
The 1st Innovation Forum of Advanced Engineering and Education (IFAEE), 01 Nov. 2014

Characterization of GaN thin film grown on pseudo Al template by radio-frequency plasma-assisted molecular beam epitaxy
Y.Watanabe; S.Osawa; T.Onuma; T.Yamaguchi; and T.Honda
The 1st Innovation Forum of Advanced Engineering and Education (IFAEE), 01 Nov. 2014

Mist chemical vapor deposition growth of low Al-composition alfa-(AlGa)2O3
T.Hatakeyama; K.Tanuma; S.Osawa; Y.Sugiura; T.Onuma; T.Hirasaki; H.Murakami; T.Yamaguchi; and T.Honda
The 1st Innovation Forum of Advanced Engineering and Education (IFAEE), 01 Nov. 2014

Ga2O3基板の光学的特性評価
26 Sep. 2014

AlOx/AlN/GaNヘテロ構造の発光特性
20 Sep. 2014

疑似Al基板上GaN薄膜のフォトルミネッセンス評価
19 Sep. 2014

RF-MBE法を用いたGaN成長が疑似Al基板に与える影響
19 Sep. 2014

Mist CVD法を用いて製作したalfa-Al2O3基板上Ga-In-O薄膜の評価
18 Sep. 2014

ワイドギャップ半導体beta-Ga2O3単結晶のテラヘルツ波吸収測定
17 Sep. 2014

Growth of alfa-Ga2O3 on alfa-Al2O3 substrate by mist CVD and growth of GaN on alfa-Ga2O3 buffer layer by RF-MBE
T.Yamaguchi; T.Hatakeyama; Y.Sugiura; T.Onuma; and T.Honda
18th International Conference on Molecular Beam Epitaxy (MBE2014), 07 Sep. 2014

Growth of pn-GaInN structures by RF-MBE and fabrication of homojunction-type light emitting diodes
K.Narutani; T.Yamaguchi; K.Wang; T.Araki; Y.Nanishi; L.Sang; M.Sumiya; S.Fujioka; T.Onuma; and T. Honda
18th International Conference on Molecular Beam Epitaxy (MBE2014), 07 Sep. 2014

Optical properties of GaInN p-n homojunction blue-green light-emitting-diodes
T.Onuma; K.Narutani; S.Fujioka; T.Yamaguchi; K.Wang; T.Araki; Y.Nanishi; L.Sang; M.Sumiya; and T.Honda
International Union of Materials Research Societies, International Conference in Asia 2014 (IUMRS-ICA 2014), 24 Aug. 2014

Thickness Dependence of Pseudo Aluminum Templates in Growth of GaN by RF-MBE
S.Osawa; Y.Watanabe; T.Onuma; T.Yamaguchi; and T.Honda
International Workshop on Nitride Semiconductors 2014 (IWN2014), 24 Aug. 2014

Study on structure perfection of one-monolayer thick InN in hexagonal GaN using XRD techniques
N.Watanabe; D.Tajimi; N.Hashimoto; K.Kusakabe; K.Wang; T.Yamaguchi; T.Onuma; A.Yoshikawa; and T.Honda
International Workshop on Nitride Semiconductors 2014 (IWN2014), 24 Aug. 2014

RF-MBE growth of group-III nitrides and mist CVD growth of group-III oxides
T.Yamaguchi; T.Onuma; H.Nagai; C.Mochizuki; M.Sato; T.Honda; T.Araki; and Y.Nanishi
6th International Conference on Mechanical and Electronics Engineering (ICMEE 2014), 16 Aug. 2014

RF-MBE法を用いた膜厚の異なるAlテンプレート上GaN 成長
26 Jul. 2014

RF-MBE 法によるGaInN 厚膜成長とpn ホモ接合型青緑色LED の製作
26 Jul. 2014

Impact of UV transparent Ga-In-O electrode in vertical-type GaN-based metal oxide semiconductor light-emitting diodes
S.Fujioka; T.Yasuno; A.Sato; T.Onuma; H.Nagai; T.Yamaguchi; M.Sato; and T.Honda
33th Electronic Materials Symposium, 09 Jul. 2014

Blue-green light emitting diodes using pn-GaInN homojunction-type structure
K.Narutani; T.Yamaguchi; K.Wang; T.Araki; Y.Nanishi; L.Sang; M.Sumiya; S.Fujioka; T.Onuma; and T. Honda
33th Electronic Materials Symposium, 09 Jul. 2014

Investigation of Ga-In-O films grown on alfa-Al2O3 substrates by mist CVD
K.Tanuma; T.Hatakeyama; T.Onuma; T.Yamaguchi; and T.Honda
33th Electronic Materials Symposium, 09 Jul. 2014

Impact of perfection on one-monolayer thick InN in hexagonal GaN
N.Watanabe; D.Tajimi; T.Onuma; N.Hashimoto; K.Kusakabe; K.Wang; T.Yamaguchi; A.Yoshikawa; and T.Honda
33th Electronic Materials Symposium, 09 Jul. 2014

Mist CVD growth of Ga-In-O films grown on alfa-Al2O3 substrates
K.Tanuma; T.Hatakeyama; T.Onuma; T.Yamaguchi; and T.Honda
The International Union of Materials Research Societies - International Conference on Electronic Materials 2014 (IUMRS-ICEM 2014), 10 Jun. 2014

Mist Chemical Vapor Deposition Growth of Ga2O3, In2O3 and Their Alloys
T.Yamaguchi; K.Tanuma; T.Hatakeyama; T.Onuma; and T.Honda
The 39th International Symposium on Compound Semiconductors (ISCS 2012), 11 May 2014

RF-MBE growth of GaInN ternary alloys using DERI method and fabrication of pn-GaInN LEDs
T.Yamaguchi; K.Narutani; T.Onuma; T.Honda; T.Araki; and Y.Nanishi
2014 International Workshop on Future Energy Materials and Devices (IWFEMD 2014), 01 May 2014

Light emission properties of ultra thin InN in the GaN matrix
T.Honda; T.Yamaguchi; T.Onuma; D.Tajimi; N.Watanabe; N.Hashimoto; K.Kusakabe; and A.Yoshikawa
The International Conference on Metamaterials and Nanophysics 2014 (METANANO 2014), 22 Apr. 2014

Fabrication of Vertical-Type GaN-Based Metal Oxide Semiconductor Light-Emitting Diodes
S.Fujioka; T.Yasuno; A.Sato; T.Onuma; H.Nagai; T.Yamaguchi; M.Sato; and T.Honda
Conference on LED and Its Industrial Application ’14 (LEDIA ’14), 22 Apr. 2014

RF-MBE Growth of pn-GaInN Structure and Fabrication of Blue-Green Homojunction-Type Light Emitting Diode
K.Narutani; T.Yamaguchi; K.Wang; T.Araki; Y.Nanishi; L.Sang; M.Sumiya; S.Fujioka; T.Onuma; and T.Honda
Conference on LED and Its Industrial Application ’14 (LEDIA ’14), 22 Apr. 2014

Optical Properties of Ga-In-O Polycrystalline Films Fabricated by Molecular Precursor Method
T.Onuma; T.Yasuno; S.Takano; R.Goto; S.Fujioka; T.Hatakeyama; H.Hara; C.Mochizuki; H.Nagai; T.Yamaguchi; M.Sato; and T.Honda
Conference on LED and Its Industrial Application ’14 (LEDIA ’14), 22 Apr. 2014

GaInNのRF-MBE成長とpn ホモ接合型青緑色LEDの製作
20 Mar. 2014

自立GaN基板上m面Al1-xInxNエピタキシャル薄膜の発光特性(I)
19 Mar. 2014

ミストCVD法を用いたGa2O3結晶成長における成長速度の温度依存性
18 Mar. 2014

分子プリカーサー法で製作したGa-In-O多結晶薄膜の発光特性
17 Mar. 2014

光・電子線を用いたワイドギャップ窒化物・酸化物半導体の評価
26 Nov. 2013

Mist CVD growth of alfa-Ga2O3 on sapphire substrates and RF-MBE growth of GaN on alfa-Ga2O3/sapphire templetes
T.Hatakeyama; T.Yamaguchi; D.Tajimi; Y.Sugiura; R.Amiya; T.Onuma; and T.Honda
The 12th International Symposium on Advanced Technology (ISAT12), 13 Nov. 2013

Ga2O3 and In2O3 growth by mist CVD
K.Tanuma; T.Yamaguchi; T.Hatakeyama; T.Onuma; and T.Honda
The 12th International Symposium on Advanced Technology (ISAT12), 13 Nov. 2013

Effects of (Al,Ga)Ox/GaN interface states on GaN-based Schottky-type light-emitting diodes
S.Fujioka; R.Amiya; T.Onuma; T.Yamaguchi; and T.Honda
The 2nd International Conference on Advanced Electromaterials, 12 Nov. 2013

Ga2O3上GaN成長とGaN上Ga2O3成長
06 Nov. 2013

ミストCVD 法を用いたGa2O3及びIn2O3成長
06 Nov. 2013

GaN系ショットキー型発光ダイオードにおける(Al,Ga)Ox/GaN界面準位の影響
17 Sep. 2013

Temperature dependent cathodoluminescence spectra of Ga-In-O films fabricated by molecular precursor method
T.Onuma; T.Yasuno; S.Fujioka; S.Takano; T.Oda; H.Nagai; H.Hara; C.Mochizuki; M.Sato; and T.Hond
The 2013 JSAP-MRS Joint Symposia, 16 Sep. 2013

ミストCVD法を用いたGaN基板上へのGa2O3成長
16 Sep. 2013

beta-Ga2O3結晶における青色発光強度と抵抗率の相関
16 Sep. 2013

RF-MBE growth of GaN films on nitridated alfa-Ga2O3 buffer layer
T.Yamaguchi; T.Hatakeyama; D.Tajimi; Y.Sugiura; T.Onuma; and T.Honda
The 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 11 Aug. 2013

Polarized Raman Spectra in beta-Ga2O3 Crystals
T.Onuma; S.Fujioka; T.Yamaguchi; M.Higashiwaki; K.Sasaki; T.Masui; and T.Honda
The 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 11 Aug. 2013

Effects of surface modification on emission property of GaN Schottky diodes
S.Fujioka; R.Amiya; T.Onuma; T.Yamaguchi; and T.Honda
32th Electronic Materials Symposium, 10 Jul. 2013

Impact of ultra-thin InN layers in GaN matrix for light-emitting diodes with super weak waveguide
D.Tajimi; Y.Sugiura; T.Hatakeyama; T.Onuma; T.Yamaguchi; and T.Honda
32th Electronic Materials Symposium, 10 Jul. 2013

Temperature Dependent Cathodoluminescence Spectra of beta-Ga2O3 Crystals
T.Onuma; S.Fujioka; T.Yamaguchi; M.Higashiwaki; K.Sasaki; T.Masui; and T.Honda
Conference on LED and Its Industrial Application ’13 (LEDIA ’13), 23 Apr. 2013

Surface Modification of GaN Crystals and Its Effects on Optical Properties
S.Fujioka; R.Amiya; T.Onuma; T.Yamaguchi; and T.Honda
Conference on LED and Its Industrial Application ’13 (LEDIA ’13), 23 Apr. 2013

Cathodoluminescence Spectra of beta-gallium Oxide Thin Film Fabricated by Molecular Precursor Method
S.Takano; H.Nagai; H.Hara; C.Mochizuki; I.Takano; T.Onuma; T.Honda; and M.Sato
Conference on LED and Its Industrial Application ’13 (LEDIA ’13), 23 Apr. 2013

beta-Ga2O3結晶の偏光ラマンスペクトル
28 Mar. 2013

Growth of ultra-thin InN/GaN quantum well with super-weak waveguide by RF-MBE
T.Honda; D.Tajimi; Y.Sugiura; T.Onuma; and T.Yamaguchi
The 17th European Molecular Beam Epitaxy Workshop (Euro-MBE 2013), 10 Mar. 2013

Band-bending around the Surface of Zn and O-polarity Hexagonal ZnO Crystals
T.Honda; T.Onuma; Y.Sugiura; and T.Yamaguchi
Materials Research Society, 2012 Fall Meeting, 25 Nov. 2012

Structure and optical properties of transparent Ga2O3-x thin films fabricated by the molecular precursor method
H.Nagai; S.Takano; H.Hara; C.Mochizuki; I.Takano; T.Onuma; T.Honda; and M.Sato
The 11th International Symposium on Advanced Technology (ISAT-Special), 30 Oct. 2012

Electron-beam incident-angle-resolved cathodoluminescence studies on bulk ZnO crystals
T.Onuma; S.Fujioka; F.Tomori; T.Yamaguchi; and T.Honda
The 11th International Symposium on Advanced Technology (ISAT-Special), 30 Oct. 2012

ZnO単結晶の電子線入射角度依存カソードルミネセンス測定
13 Sep. 2012

酸化ガリウムのCLスペクトルの温度依存性
13 Sep. 2012

集積化GaN系発光素子のための超薄膜InNを挿入した弱導波路発光層の検討
12 Sep. 2012

Incident Angle Resolved Cathodoluminescence Study of ZnO Single Crystals
T.Onuma; T. Yamaguchi; and T. Honda
The 39th International Symposium on Compound Semiconductors (ISCS 2012), 27 Aug. 2012

AlおよびAlOx膜堆積が極性GaNのPL強度に与える影響
16 Mar. 2012

高AlNモル分率AlGaN混晶薄膜の時間分解PL/CL評価
16 Mar. 2012

極性・非極性バルクZnO表面におけるCLスペクトルの比較
15 Mar. 2012

アモノサーマルGaN基板上に形成したAlGaN/GaNの時間分解フォトルミネッセンス評価
01 Sep. 2011

六方晶GaNとZnOにおける表面再結合の比較
01 Sep. 2011

極性および非極性GaN表面における表面再結合過程
01 Sep. 2011

化合物原料MBE法を用いたZnO薄膜の結晶成長とその評価
31 Aug. 2011

AlNエピタキシャル薄膜の発光寿命と点欠陥他の関係について
31 Aug. 2011

Comparative study of surface recombination in hexagonal GaN and ZnO surfaces
T.Onuma; N.Sakai; T.Igaki; T.Yamaguchi; A.A.Yamaguchi; and T.Honda
The 28th North American Conference on Molecular Beam Epitaxy (NAMBE 2011), 14 Aug. 2011

Ammonothermal growth of low oxygen concentration GaN using a dry acidic mineralizer and fabrication of an Al0.2Ga0.8N/GaN heterostructure
S.F.Chichibu; K.Hazu; Y.Kagamitani; T.Onuma; D.Ehrentraut; T.Fukuda; and T.Ishiguro
The 9th International Conference on Nitride Semiconductors (ICNS-9), 10 Jul. 2011

Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys
S.F.Chichibu; T.Onuma; K.Hazu; T.Sota; and A.Uedono
The 9th International Conference on Nitride Semiconductors (ICNS-9), 10 Jul. 2011

Recombination dynamics in polar and nonpolar GaN surfaces
N.Sakai; T.Igaki; T.Onuma; A.A.Yamaguchi; T.Yamaguchi; and T.Honda
30th Electronic Materials Symposium, 29 Jun. 2011

Optical properties of GaN films and an AlGaN/GaN heterostructure fabricated on GaN substrates grown by the ammonothermal method using gas-phase synthesized NH4Cl mineralizer
S.F.Chichibu; K.Hazu; Y.Kagamitani; T.Onuma; D.Ehrentraut; T.Fukuda; and T.Ishiguro
The 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS2011), 22 May 2011

ZnO growth for transparent electrodes by compound-source MBE
Y.Sugiura; T.Oda; S.Obata; Y.Yoshihara; T.Onuma; and T.Honda
The 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS2011), 22 May 2011

Surface recombination in polar and nonpolar GaN surfaces
N.Sakai; T.Onuma; A.A.Yamaguchi; and T.Honda
The 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS2011), 22 May 2011

Time-resolved photoluminescence of a two-dimentional electron gas in an Al0.2Ga0.8N/GaN heterostructure fabricated on GaN substrates grown by the ammonothermal method using acidic mineralizers
K.Hazu; Y.Kagamitani; T.Onuma; D.Ehrentraut; T.Fukuda; T.Ishiguro; and S.F.Chichibu
Eoropean Materials Research Society, 09 May 2011

Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys
S.F.Chichibu; T.Onuma; K.Hazu; T.Sota; and A.Uedono
Eoropean Materials Research Society, 09 May 2011

m面自立GaN基板のチルトモゼイク異方性がNH3-MBE成長m面Al0.25Ga0.75N薄膜の発光特性に与える影響
26 Mar. 2011

極性・非極性(Al,In,Ga)N混晶薄膜における振動子強度の歪依存性
26 Mar. 2011

気相合成NH4Cl鉱化剤を用いて成長したアモノサーマルGaN基板上にMOVPE形成したAlGaN/GaNの時間分解フォトルミネッセンス評価
26 Mar. 2011

MOVPE成長AlN薄膜の点欠陥・不純物が発光寿命に及ぼす影響
25 Mar. 2011

化合物原料MBE法によるZnO薄膜の製作検討
25 Mar. 2011

Surface recombination mechanism in hexagonal GaN crystals
N.Sakai; T.Onuma; T.Okuhata; A.A.Yamaguchi; and T.Honda
The 9th International Symposium on Advanced Technology (ISAT9), 04 Nov. 2010

Time-resolved Photoluminescence and Time-resolved Cathodoluminescence Studies on AlN Epilayers Grown by Low-pressure Metalorganic Vapor Phase Epitaxy
S.F.Chichibu; K.Hazu; T.Onuma; T.Sota; and A.Uedono
International Workshop on Nitride Semiconductors 2010 (IWN2010), 19 Sep. 2010

Optical Properties of GaN Crystals Grown by Ammonothermal Method Using Acidic Mineralizers and Homoepitaxial Films Grown by Metalorganic Vapor Phase Epitaxy
K.Hazu; Y.Kagamitani; T.Onuma; T.Ishiguro; T.Fukuda; and S.F.Chichibu
International Workshop on Nitride Semiconductors 2010 (IWN2010), 19 Sep. 2010

Surface recombination of hexagonal GaN crystals
N.Sakai; T.Okuhata; T.Onuma; A.A.Yamaguchi; and T.Honda
International Workshop on Nitride Semiconductors 2010 (IWN2010), 19 Sep. 2010

気相合成した酸性鉱化剤を用いて成長したアモノサーマルGaN及びMOVPEホモエピタキシャル層の評価
14 Sep. 2010

ヨウ化アンモニウムを鉱化剤に用いたアモノサーマル法によるGaN育成
14 Sep. 2010

Ammonothermal growth of GaN using a gas-phase synthesized acidic mineralizer and homoepitaxy by metalorganic vapor phase epitaxy
S.F.Chichibu; Y.Kagamitani; K.Hazu; T.Onuma; T.Ishiguro; and T.Fukuda
The Third International Symposium on Growth of III-Nitrides (ISGN-3), 04 Jul. 2010

Identification of cathodoluminescence peaks in m-plane AlxGa1-xN epilayers grown on freestanding GaN substrates prepared by halide vapor phase epitaxy
K.Hazu; M.Kagaya; T.Hoshi; T.Onuma; and S.F.Chichibu
The Third International Symposium on Growth of III-Nitrides (ISGN-3), 04 Jul. 2010

パルス電子線を用いた窒化物半導体のピコ秒時間分解分光計測(3) - MOVPE成長高AlNモル分率AlGaNの時間分解CL計測-
18 Mar. 2010

パルス電子線を用いた窒化物半導体のピコ秒時間分解分光計測(2) - MOVPE成長AlNの時間分解PLとの比較 -
18 Mar. 2010

パルス電子線を用いた窒化物半導体のピコ秒時間分解分光計測(1) -パルス電子線発生とGaN計測-
18 Mar. 2010

自立GaN基板へのm面Al1-xInxN薄膜のMOVPE成長
17 Mar. 2010

アンモニアの相状態がアモノサーマル法GaN結晶作製に与える影響
17 Mar. 2010

AlNエピタキシャル薄膜における励起子発光機構
19 Nov. 2009

Capability of the bulk GaN single crystals spontaneously nucleated by the Na-flux method as an homoepitaxial substrate
T.Onuma; T.Yamada; H.Yamane; and S.F.Chichibu
The 8th International Conference on Nitride Semiconductors (ICNS-8), 18 Oct. 2009

Polarization properties of m-plane AlxGa1-xN films suffering from in-plane anisotropic stress
K.Hazu; T.Hoshi; M.Kagaya; T.Onuma; and S.F.Chichibu
The 8th International Conference on Nitride Semiconductors (ICNS-8), 18 Oct. 2009

Time-resolved photoluminescence study of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy
T.Onuma; K.Hazu; T.Shibata; K.Kosaka; K.Asai; S.Sumiya; M.Tanaka; T.Sota; and S.F.Chichibu
The 8th International Conference on Nitride Semiconductors (ICNS-8), 18 Oct. 2009

Spatially-resolved cathodoluminescence study on m-plane AlxGa1-xN films grown on m-plane free-standing GaN substrates
S.F.Chichibu; K.Hazu; T.Hoshi; M.Kagaya; and T.Onuma
The 8th International Conference on Nitride Semiconductors (ICNS-8), 18 Oct. 2009

AlN薄膜の時間分解フォトルミネッセンス
10 Sep. 2009

m面AlxGa1-xN薄膜の偏光特性の面内異方性歪依存性
10 Sep. 2009

NH3-MBE成長m面AlxGa1-xN薄膜の空間分解陰極線蛍光評価
10 Sep. 2009

陽電子消滅を用いたAlNの点欠陥と光学特性の研究
08 Sep. 2009

アモノサーマル法による高純度GaN結晶育成
08 Sep. 2009

Optical Properties of m-plane (In,Ga)N Films Grown by Metalorganic Vapor Phase Epitaxy
T.Onuma; H.Yamaguchi; L.Zhao; M.Kubota; K.Okamoto; H.Ohta; and S.F.Chichibu
International Symposium of post-silicon materials and devices research alliance project, 05 Sep. 2009

High purity GaN growth by the ammonothermal method using an acidic mineralizer
Y.Kagamitani; S.F.Chichibu; T.Onuma; K.Hazu; T.Fukuda; and T.Ishiguro
The 36th International Symposium on Compound Semiconductors (ISCS 2009), 30 Aug. 2009

Time-resolved photoluminescence studies of excitons in AlN epilayers grown by metalorganic vapor phase epitaxy
T.Onuma; K.Hazu; T.Shibata; K.Kosaka; K.Asai; S.Sumiya; M.Tanaka; T.Sota; and S.F.Chichibu
The 36th International Symposium on Compound Semiconductors (ISCS 2009), 30 Aug. 2009

Longitudinal-transverse splitting of A-excitons in ZnO homoepitaxial films grown by HWPSE method
Y.Sawai; H.Amaike; T.Onuma; K.Hazu; and S.F.Chichibu
9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN9), 16 Apr. 2009

Polarization properties of m-plane AlxGa1-xN films suffering from in-plane anisotropic stress
K.Hazu; T.Hoshi; M.Kagaya; T.Onuma; K.Fujito; H.Namita; and S.F.Chichibu
9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN9), 16 Apr. 2009

ヘリコン波励起プラズマスパッタ法成長ZnOエピタキシャル薄膜の励起子ポラリトン発光
30 Mar. 2009

m面自立GaN基板上NH3-MBE成長ホモエピタキシャル薄膜の構造的・光学的特性のV/III比依存性
30 Mar. 2009

Optical properties of nearly stacking-fault-free m-plane GaN and InGaN films grown by metalorganic vapor phase epitaxy on low defect density free-standing substrates
S.F.Chichibu; H.Yamaguchi; L.Zhao; M.Kubota; T.Onuma; K.Okamoto; and H.Ohta
International Workshop on Nitride Semiconductors 2008 (IWN2008), 06 Oct. 2008

Impacts of dislocation bending and growth polar direction on the local cathodoluminescence spectra of GaN prepared by seeded ammonothermal growth
S.F.Chichibu; T.Onuma; T.Hashimoto; K.Fujito; F.Wu; J.S.Speck; and S.Nakamura
International Workshop on Nitride Semiconductors 2008 (IWN2008), 06 Oct. 2008

Optical gain in low dislocation density nonpolar m-plane InGaN/GaN MQW LD wafers lased at 400 nm and 426 nm
T.Onuma; K.Okamoto; H.Ohta; and S.F.Chichibu
International Workshop on Nitride Semiconductors 2008 (IWN2008), 06 Oct. 2008

Ammonia source molecular beam epitaxy of m-plane AlxGa1-xN films exhibiting negligible deep emission bands on low defect density free-standing GaN substrates
T.Hoshi; K.Oshita; M.Kagaya; K.Fujito; H.Namita; K.Hazu; T.Onuma; and S.F.Chichibu
International Workshop on Nitride Semiconductors 2008 (IWN2008), 06 Oct. 2008

Helicon-wave-excited-plasma sputtering epitaxy of ZnO on GaN templates and bulk ZnO substrates
H.Amaike; Y.Sawai; K.Hazu; T.Onuma; T.Koyama; and S.F.Chichibu
The 5th International Workshop on ZnO and Related Materials, 22 Sep. 2008

GaNテンプレート及びバルクZnO基板上へのZnOのHWPSE成長
04 Sep. 2008

Zn極性MgZnO/ZnOヘテロ接合の分子線エピタキシーとキャラクタリゼーション
03 Sep. 2008

m面自立GaN基板上に成長したAlxGa1-xN薄膜の偏光・空間分解陰極線蛍光特性
03 Sep. 2008

m面自立GaN基板上へのAlxGa1-xN薄膜のNH3ソースMBE成長
03 Sep. 2008

Naフラックス法により成長したGaN単結晶の発光特性
02 Sep. 2008

酸性鉱化剤を用いた安熱合成GaNエピタキシャル層の陰極線蛍光特性
02 Sep. 2008

Effects of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN prepared by seeded ammonothermal growth
S.F.Chichibu; T.Onuma; T.Hashimoto; K.Fujito; F.Wu; J.S.Speck; and S.Nakamura
The Second International Symposium on Growth of III-Nitrides (ISGN-2), 06 Jul. 2008

Optical properties of nearly stacking-fault-free m-plane (In,Ga)N films grown by metalorganic vapor phase epitaxy on low defect density free-standing substrates
S.F.Chichibu; H.Yamaguchi; L.Zhao; M.Kubota; T.Onuma; K.Okamoto; and H.Ohta
The Second International Symposium on Growth of III-Nitrides (ISGN-2), 06 Jul. 2008

Optical gain in low dislocation density nonpolar m-plane InGaN/GaN MQW LD wafers
T.Onuma; K.Okamoto; H.Ohta; and S.F.Chichibu
50th Electronic Materials Conference (EMC-50), 25 Jun. 2008

Optical properties of nearly stacking-fault-free m-plane (In,Ga)N films grown by metalorganic vapor phase epitaxy on low defect density free-standing substrates
S.F.Chichibu; H.Yamaguchi; L.Zhao; M.Kubota; T.Onuma; K.Okamoto; and H.Ohta
50th Electronic Materials Conference (EMC-50), 25 Jun. 2008

Effects of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN prepared by seeded ammonothermal growth
S.F.Chichibu; T.Onuma; T.Hashimoto; K.Fujito; F.Wu; J.S.Speck; and S.Nakamura
50th Electronic Materials Conference (EMC-50), 25 Jun. 2008

Impacts of point defects on the recombination dynamics and emission efficiency of (Al,Ga)N
S.F.Chichibu; T.Onuma; and A.Uedono
The Fourth Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), 21 May 2008

Exciton fine structures in AlN epilayers grown by metalorganic vapor phase epitaxy
T.Onuma; K.Kosaka; K.Asai; S.Sumiya; T.Shibata; M.Tanaka; T.Sota; A.Uedono; and S.F.Chichibu
7th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2008), 27 Apr. 2008

Built-in and external bias-induced quantum-confined Stark effects in a nonpolar m-plane In0.15Ga0.85N / GaN multiple quantum well light-emitting diode
T.Onuma; H.Amaike; M.Kubota; K.Okamoto; H.Ohta; J.Ichihara; H.Takasu; and S.F.Chichibu
7th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2008), 27 Apr. 2008

低転位非極性m面InGaN/GaN多重量子井戸LDの光学利得
29 Mar. 2008

m面自立GaN基板上へのInGaN薄膜のMOVPE成長
29 Mar. 2008

分子線エピタキシー法(MBE)によるZn極性面ZnO 基板上MgZnO/ZnOヘテロ構造
28 Mar. 2008

分子線エピタキシー法で成長したZn極性ZnO基板上ZnO膜の時間分解フォトルミネッセンス
27 Mar. 2008

塩基性鉱化剤を用いた安熱合成GaNエピタキシャル層の構造および発光特性
27 Mar. 2008

MgxZn1-xO epitaxial films grown on ZnO substrates by molecular beam epitaxy
H.Yuji; K.Nakahara; K.Tamura; S.Akasaka; A.Sasaki; T.Tanabe; H.Takasu; T.Onuma; S.F.Chichibu; A.Tsukazaki; A.Ohtomo; and M.Kawasaki
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2008, 20 Jan. 2008

Quantum-confined Stark effects in nonpolar m-plane InxGa1-xN/GaN multiple quantum well light-emitting diodes fabricated on low defect density free-standing substrates
T.Onuma; H.Amaike; M.Kubota; K.Okamoto; H.Ohta; J.Ichihara; H.Takasu; and S.F.Chichibu
The 7th International Conference on Nitride Semiconductors (ICNS-7), 16 Sep. 2007

Observation of well-resolved bound, free, and higher order excitons in AlN epilayers grown by metalorganic vapor phase epitaxy
T.Onuma; T.Koyama; K.Kosaka; K.Asai; S.Sumiya; T.Shibata; M.Tanaka; T.Sota; A.Uedono; and S.F.Chichibu
The 7th International Conference on Nitride Semiconductors (ICNS-7), 16 Sep. 2007

AlN,GaNにおける貫通転位密度と点欠陥密度の関係
07 Sep. 2007

Microstructural Evolution in the Initial Growth Stage of m-Plane GaN on m-Plane SiC with a High-Temperature Grown AlN Buffer
Q.Sun; S.-Y.Kwon; Z.Ren; J.Han; T.Onuma; and S.F.Chichibu
49th Electronic Materials Conference (EMC-49), 20 Jun. 2007

分子線エピタキシー法(MBE)による(Mg)ZnOホモエピタキシー技術
29 Mar. 2007

酸化亜鉛の非輻射過程と点欠陥の関係
29 Mar. 2007

AlN価電子帯オーダリングの歪依存性
28 Mar. 2007

MOVPE成長AlN薄膜の発光特性
28 Mar. 2007

AlN薄膜におけるVL発光強度と欠陥密度の相関性
28 Mar. 2007

Impacts of morphological features of GaN templates on the In-incorporation efficiency in nonpolar m-plane InxGa1-xN / GaN multiple quantum wells
T.Onuma; A.Chakraborty; M.McLaurin; B.A.Haskell; T.Koyama; P.T.Fini; S.Keller; S.P.DenBaars; J.S.Speck; S.Nakamura; U.K.Mishra; T.Sota; and S.F.Chichibu
34th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-34), 14 Jan. 2007

Relation between the near-band-edge emission intensity and structural defects in AlN epilayers
T.Koyama; M.Sugawara; T.Hoshi; P.Cantu; J.F.Kaeding; R.Sharma; T.Onuma; S.Keller; U.K.Mishra; S.P.DenBaars; S.Nakamura; T.Sota; A.Uedono; and S.F.Chichibu
34th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-34), 14 Jan. 2007

Recombination dynamics and in-plane polarization of the emission in an m-plane InxGa1-xN/GaN blue light-emitting-diode fabricated on the free-standing GaN substrate
S.F.Chichibu; T.Koyama; T.Onuma; H.Masui; A.Chakraborty; B.A.Haskell; S.Keller; T.Sota; U.K.Mishra; J.S.Speck; S.Nakamura; and S.P.DenBaars
International Workshop on Nitride Semiconductors 2006 (IWN2006), 22 Oct. 2006

Effects of High-Temperature-Annealed self-Buffer layer (HITAB) insertion on the photoluminescence properties of Mg0.15Zn0.85O alloy films grown by laser-assisted molecular-beam epitaxy
M.Kubota; A.Tsukazaki; T.Onuma; A.Ohtomo; T.Sota; M.Kawasaki; and S.F.Chichibu
The 4th International Workshop on ZnO and Related Materials, 03 Oct. 2006

Inを含むIII族窒化物半導体混晶における局在励起子について
30 Aug. 2006

ニオブ添加酸化チタン薄膜の抵抗率に対する熱処理効果
30 Aug. 2006

NH3-MBE成長AlN薄膜の成長温度およびV/III比が光学的特性に与える影響
30 Aug. 2006

MOVPE成長Mg添加p型半極性面(10-1-1)GaNのフォトルミネセンス評価
30 Aug. 2006

Defect-insensitive emission probability in group-III nitride alloys containing In
S.F.Chichibu; A.Uedono; T.Onuma; B.A.Haskell; A.Chakraborty; T.Koyama; P.T.Fini; S.Keller; S.P.DenBaars; J.S.Speck; U.K.Mishra; S.Nakamura; S.Yamaguchi; S.Kamiyama; H.Amano; I.Akasaki; J.Han; and T.Sota
International Symposium on Compound Semiconductors 2006 (ISCS 2006), 13 Aug. 2006

Elimination of point defects as a principal way in improving quantum efficiency of excitonic emissions in ZnO epilayers
M.Kubota; A.Tsukazaki; T.Onuma; A.Ohtomo; T.Sota; A.Uedono; M.Kawasaki; and S.F.Chichibu
25th Electronic Materials Symposium, 05 Jul. 2006

Recombination dynamics in Mg0.15Zn0.85O alloy films grown by laser-assisted molecular-beam epitaxy using High-Temperature-Annealed self-Buffer layer (HITAB)
M.Kubota; A.Tsukazaki; T.Onuma; A.Ohtomo; T.Sota; M.Kawasaki; and S.F.Chichibu
25th Electronic Materials Symposium, 05 Jul. 2006

Recombination dynamics in nonpolar (1-100) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
T.Onuma; A.Chakraborty; B.A.Haskell; T.Koyama; P.T.Fini; S.Keller; S.P.DenBaars; J.S.Speck; S.Nakamura; U.K.Mishra; T.Sota; and S.F.Chichibu
25th Electronic Materials Symposium, 05 Jul. 2006

Thermally stable semi-insulating properties of Fe-doped GaN grown by hydride vapor phase epitaxy characterized by photoluminescence and positron annihilation techniques
M.Kubota; A.Uedono; Y.Ishihara; T.Onuma; A.Usui; and S.F.Chichibu
The 13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-13), 22 May 2006

Cross-sectional spatially-resolved cathodoluminescence study of cubic GaN grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substrates
T.Onuma; T.Suzuki; T.Nozaka; H.Yamaguchi; and S.F.Chichibu
The 13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-13), 22 May 2006

Observation of a 208 nm emission at room temperature from AlN epilayers grown at high temperature by NH3-source molecular-beam epitaxy on GaN templates using low-temperature interlayers
M.Sugawara; T.Koyama; J.F.Kaeding; R.Sharma; Y.Uchinuma; T.Araya; T.Onuma; S.Nakamura; and S.F.Chichibu
6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), 15 May 2006

Recombination dynamics of a 268 nm emission peak in strained Al0.53In0.11Ga0.36N multiple quantum wells grown on AlGaN templates on (0001) Al2O3
T.Onuma; S.Keller; S.P.DenBaars; J.S.Speck; S.Nakamura; U.K.Mishra; T.Sota; and S.F.Chichibu
6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), 15 May 2006

Prospective emission efficiency and in-plane light polarization of nonpolar (1-100) InxGa1-xN / GaN blue light-emitting-diodes fabricated on free-standing GaN substrates
T.Koyama; T.Onuma; H.Masui; A.Chakraborty; B.A.Haskell; U.K.Mishra; J.S.Speck; S.Nakamura; S.P.DenBaars; T.Sota; and S.F.Chichibu
6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), 15 May 2006

高温熱処理自己バッファ層(HITAB)を用いたL-MBE成長Mg0.15Zn0.85Oの室温発光寿命
26 Mar. 2006

自立GaN基板上非極性(1-100) InxGa1-xN/GaN量子井戸LEDの光学的特性
25 Mar. 2006

LEO-GaN上非極性(1-100) InxGa1-xN/GaN量子井戸における発光ダイナミクス
25 Mar. 2006

MOVPE成長3C-SiC基板上立方晶GaNの空間分解陰極線蛍光評価
25 Mar. 2006

低温中間層を用いたGaNテンプレート上へのNH3-MBE法AlN高温成長
25 Mar. 2006

窒素およびホウ素をドープした6H-SiC蛍光層の光学特性
23 Mar. 2006

Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light emitting diodes on (10-1-1) GaN templates
A.Chakraborty; T.Onuma; T.J.Baker; S.Keller; S.F.Chichibu; S.P.DenBaars; S.Nakamura; J.S.Speck; and U.K.Mishra
Materials Research Society, 2005 Fall Meeting, 28 Nov. 2005

LEO-GaN上無極性(11-20) InxGa1-xN / GaN量子井戸における励起子局在
11 Sep. 2005

発光波長265nmのAlxInyGa1-x-yN四元多重量子井戸における発光ダイナミクス
11 Sep. 2005

HVPE成長Fe添加GaNの半絶縁性に熱処理が与える影響
11 Sep. 2005

窒化物半導体混晶中の点欠陥密度と室温発光寿命の関係
11 Sep. 2005

440nm帯ZnO青色発光ダイオード
08 Sep. 2005

安熱合成法によるGaNエピタキシャル層の空間分解陰極線蛍光評価
07 Sep. 2005

Exciton dynamics in nonpolar (11-20) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
T.Onuma; A.Chakraborty; B.A.Haskell; S.Keller; T.Sota; U.K.Mishra; S.P.DenBaars; J.S.Speck; S.Nakamura; and S.F.Chichibu
The 6th International Conference on Nitride Semiconductors (ICNS-6), 28 Aug. 2005

Relation between the point defect density and quantum efficiency in (Al,In,Ga)N studied by time-resolved photoluminescence and slow positron annihilation techniques: defect-resistant emission of localized excitons in InGaN
S.F.Chichibu; A.Uedono; T.Onuma; A.Chakraborty; B.A.Haskell; P.T.Fini; S.Keller; T.Sota; S.P.DenBaars; U.K.Mishra; J.S.Speck; and S.Nakamura
The 6th International Conference on Nitride Semiconductors (ICNS-6), 28 Aug. 2005

High-temperature growth of AlN epilayers on the GaN epitaxial templates by NH3 source molecular beam epitaxy
T.Koyama; M.Sugawara; Y.Uchinuma; J.F.Kaeding; R.Sharma; T.Onuma; S.Nakamura; and S.F.Chichibu
The 6th International Conference on Nitride Semiconductors (ICNS-6), 28 Aug. 2005

NH3-source molecular beam epitaxy of AlN films on the GaN epitaxial templates
T.Koyama; M.Sugawara; Y.Uchinuma; J.F.Kaeding; R.Sharma; T.Onuma; K.Nakajima; T.Aoyama; T.Chikyow; S.Nakamura; and S.F.Chichibu
24th Electronic Materials Symposium, 04 Jul. 2005

Recombination dynamics in nonpolar (11-20) InxGa1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
T.Onuma; A.Chakraborty; B.A.Haskell; S.Keller; T.Sota; S.P.DenBaars; J.S.Speck; S.Nakamura; U.K.Mishra; and S.F.Chichibu
47th Electronic Materials Conference (EMC-47), 22 Jun. 2005

Growth of atomically-flat ZnO and related alloy films by helicon-wave-excited-plasma sputtering epitaxy method
N.Shibata; T.Ohmori; T.Koyama; T.Onuma; and S.F.Chichibu
47th Electronic Materials Conference (EMC-47), 22 Jun. 2005

Characterization of GaN films grown on free-standing GaN seeds by ammonothermal growth
T.Hashimoto; K.Fujito; F.Wu; B.A.Haskell; T.Onuma; S.F.Chichibu; J.S.Speck; and S.Nakamura
47th Electronic Materials Conference (EMC-47), 22 Jun. 2005

Epitaxially aligned GaN nanowires and nanobridges by MOCVD
J.Su; M.Gherasimova; G.Cui; J.Han; C.Broadbridge; A.Lehman; T.Onuma; S.F.Chichibu; Y.He; and A.V.Nurmikko
47th Electronic Materials Conference (EMC-47), 22 Jun. 2005

Record long room-temperature spontaneous emission lifetime in ZnO epilayers grown by laser-assisted molecular beam epitaxy on ScAlMgO4 substrates using high-temperature-annealed self-buffer and proper defect management
S.F.Chichibu; A.Tsukazaki; T.Onuma; A.Ohtomo; T.Sota; A.Uedono; and M.Kawasaki
47th Electronic Materials Conference (EMC-47), 22 Jun. 2005

Epitaxially Aligned GaN Nanowires and Nanobridges by MOCVD
J.Su; M.Gherasimova; G.Cui; J.Han; Y.He; A.V.Nurmikko; T.Onuma; S.F.Chichibu; C.Broadbridge; and A.Lehman
CMOC Symposium, 17 May 2005

LEO-GaN上無極性(11-20) InxGa1-xN量子井戸における発光ダイナミクス
31 Mar. 2005

NH3ガスソースMBE法によるGaNテンプレート上へのAlN薄膜成長
30 Mar. 2005

レーザMBE成長ZnO薄膜の欠陥制御による高品質化(II)
30 Mar. 2005

レーザMBE成長ZnO薄膜の欠陥制御による高品質化(I)
30 Mar. 2005

Atomically-flat AlN epitaxial layers grown on MOVPE GaN templates by NH3-source molecular-beam epitaxy
Y.Uchinuma; M.Sugawara; T.Koyama; J.F.Kaeding; R.Sharma; T.Onuma; S.Nakamura; and S.F.Chichibu
32nd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-32), 23 Jan. 2005

Emission mechanisms in nonpolar (11-20) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
T.Onuma; A.Chakraborty; B.A.Haskell; S.Keller; T.Sota; U.K.Mishra; S.P.DenBaars; J.S.Speck; S.Nakamura; and S.F.Chichibu
32nd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-32), 23 Jan. 2005

A homoepitaxial ZnO p-i-n light emitting diode
A.Tsukazki; A.Ohtomo; T.Onuma; M.Ohtani; T.Makino; M.Sumiya; K.Ohtani; S.F.Chichibu; S.Fuke; Y.Segawa; H.Ohno; H.Koinuma; and M.Kawasaki
The 3rd International Workshop on ZnO and Related Materials, 05 Oct. 2004

Atomically flat ZnO and MgxZn1-xO epitaxial films prepared by helicon-wave-excited-plasma sputtering epitaxy
T.Koyama; T.Ohmori; N.Shibata; T.Onuma; and S.F.Chichibu
The 3rd International Workshop on ZnO and Related Materials, 05 Oct. 2004

Record long room-temperature photoluminescence lifetime in ZnO epilayers grown by laser-assisted MBE using appropriate defect management
S.F.Chichibu; T.Onuma; A.Tsukazaki; M.Kubota; A.Ohtomo; A.Uedono; Y.Segawa; T.Sota; and M.Kawasaki
The 3rd International Workshop on ZnO and Related Materials, 05 Oct. 2004

Reduction in the nonradiative defect density in ZnO films grown on Si substrates by the use of ZnS epitaxial buffer layers
T.Onuma; S.F.Chichibu; A.Uedono; Y.-Z.Yoo; T.Chikyow; T.Sota; M.Kawasaki; and H.Koinuma
The 3rd International Workshop on ZnO and Related Materials, 05 Oct. 2004

Electroluminescent ZnO p-i-n homostructural-junction
A.Tsukazki; A.Ohtomo; T.Onuma; M.Ohtani; T.Makino; M.Sumiya; K.Ohtani; S.F.Chichibu; S.Fuke; Y.Segawa; H.Ohno; H.Koinuma; and M.Kawasaki
11th International Workshop on Oxide Electronics (WOE11), 03 Oct. 2004

Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods
S.F.Chichibu; T.Ohmori; N.Shibata; T.Koyama; and T.Onuma
The 14th International Conference on Ternary and Multinary Compounds (ICTMC-14), 27 Sep. 2004

HWPS堆積n-ZnO／MOVPE成長p-CuGaS2へテロ接合LEDの鶯色EL発光
03 Sep. 2004

GaN中の非輻射再結合中心密度と点欠陥密度の相関関係
03 Sep. 2004

NH3ガスソースMBE法によるGaNテンプレート上へのAlN高温成長
02 Sep. 2004

ZnO p-n ホモ接合発光ダイオード
02 Sep. 2004

Direct comparison of defect density and photoluminescence lifetime in polar and nonpolar wurtzite and zincblende GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
S.F.Chichibu; A.Uedono; T.Onuma; T.Koida; M.Sugiyama; B.A.Haskell; M.Sumiya; H.Okumura; T.Sota; J.S.Speck; S.P.DenBaars; and S.Nakamura
International Workshop on Nitride Semiconductors 2004 (IWN2004), 19 Jul. 2004

Recombination mechanisms in strain-free AlxGa1-xN alloys studied by time-resolved photoluminescence and slow positron annihilation techniques
T.Onuma; S.F.Chichibu; A.Uedono; T.Sota; P.Cantu; T.M.Katona; J.F.Kaeding; S.Keller; U.K.Mishra; S.Nakamura; and S.P.DenBaars
23rd Electronic Materials Symposium, 07 Jul. 2004

Formation mechanisms of ZnO and Mg0.06Zn0.94O in helicon-wave-excited-plasma sputtering epitaxy
T.Koyama; T.Ohmori; N.Shibata; T.Onuma; and S.F.Chichibu
23rd Electronic Materials Symposium, 07 Jul. 2004

HWPSE法を用いたMg0.06Zn0.94O薄膜のエピタキシャル成長
29 Mar. 2004

GaNテンプレート基板の熱分解がホモエピタキシャル薄膜に与える影響
28 Mar. 2004

NH3ガスソースMBE法によるGaNテンプレート上へのホモエピタキシャル成長
28 Mar. 2004

Improved surface morphology in GaN homoepitaxy by NH3-source molecular beam epitaxy
T.Koida; Y.Uchinuma; J.Kikuchi; K.R.Wang; M.Terazaki; T.Onuma; J.F.Kaeding; R.Sharma; S.Nakamura; and S.F.Chichibu
31st Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31), 18 Jan. 2004

Position Controlled GaN Nano-Structures Fabricated by Low Energy Focused Ion Beam System
T.Nagata; P.Ahmet; T.Onuma; T.Koida; S.F.Chichibu; and T.Chikyow
Materials Research Society, 2003 Fall Meeting, 01 Dec. 2003

Recombination Dynamics in Strain-free AlxGa1-xN Alloys Studied by Time-Resolved Photoluminescence and Slow Positron Annihilation Techniques
S.F.Chichibu; A.Uedono; T.Onuma; T.Sota; P.Cantu; T.M.Katona; J.F.Kaeding; S.Keller; U.K.Mishra; S.Nakamura; and S.P.DenBaars
Materials Research Society, 2003 Fall Meeting, 01 Dec. 2003

超格子中間層を用いた立方晶GaN薄膜のMOVPE成長
01 Sep. 2003

立方晶GaN/GaAs基板界面のvoidがMOVPE成長薄膜に及ぼす影響
01 Sep. 2003

AlxGa1-xN混晶薄膜の発光寿命支配要因
01 Sep. 2003

Si基板上ZnOエピタキシャル薄膜の光学特性
31 Aug. 2003

HWPSE法におけるZnOエピタキシャル薄膜の成長メカニズム
31 Aug. 2003

Anomalous pressure dependence of light emission in cubic InGaN
S.P.Lepkowski; T.Suski; H.Teisseyre; T.Kitamura; Y.Ishida; H.Okumura; T.Onuma; T.Koida; and SF.Chichibu
The 5th International Conference on Nitride Semiconductors (ICNS-5), 25 May 2003

Bandgap bowing and emission mechanisms in Al1-xInxN epitaxial films grown by metalorganic vapor phase epitaxy
T.Onuma; SF.Chichibu; Y.Uchinuma; T.Sota; S.Yamaguchi; S.Kamiyama; H.Amano; and I.Akasaki
The 5th International Conference on Nitride Semiconductors (ICNS-5), 25 May 2003

Emission mechanisms in AIxGa1-xN films grown on sapphire (0001) substrates by low-pressure metalorganic vapor phase epitaxy
T.Onuma; T.Koida; P.Cantu; J.F.Kaeding; S.Keller; T.Sota; S.P.DenBaars; U.K.Mishra; S.Nakamura; and S.F.Chichibu
The 5th International Conference on Nitride Semiconductors (ICNS-5), 25 May 2003

Recombination dynamics of localized excitons in cubic InxGa1-xN/GaN quantum wells grown on 3C-SiC (001) substrates by rf-MBE
T.Onuma; SF.Chichibu; T.Kitamura; K.Nakajima; P.Ahmet; T.Aoyama; T.Chikyow; Y.Ishida; T.Sota; S.P.DenBaars; S.Nakamura; and H.Okumura
The 5th International Conference on Nitride Semiconductors (ICNS-5), 25 May 2003

Carrier dynamics in InGaN/GaN quantum wells with composition-graded walls
T.Onuma; Y.Uchinuma; E.-K.Suh; H.J.Lee; T.Sota; and SF.Chichibu
The 5th International Conference on Nitride Semiconductors (ICNS-5), 25 May 2003

アンモニアガスソースMBE法による(0001)サファイア基板上GaN薄膜の成長
29 Mar. 2003

Al1-xInxNエピタキシャル薄膜における発光ダイナミクス
29 Mar. 2003

AlxGa1-xNエピタキシャル薄膜における発光ダイナミクス
29 Mar. 2003

組成傾斜障壁を持つInGaN/GaN量子井戸の発光ダイナミクス
29 Mar. 2003

HWPSE法によるサファイアA面上へのZnOエピタキシャル成長
27 Mar. 2003

Recombination dynamics of localized excitons in cubic InxGa1-xN/GaN multiple quantum wells grown by rf-MBE on 3C-SiC substrate
SF.Chichibu; T.Onuma; T.Kitamura; Y.Ishida; T.Sota; S.P.DenBaars; S.Nakamura; and H.Okumura
30th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-30), 19 Jan. 2003

立方晶InxGa1-xN/GaN量子井戸における発光ダイナミクス
24 Sep. 2002

InGaN MQW 450nm LDにおける局在励起子ダイナミクス
24 Sep. 2002

Recombination dynamics of localized excitons in cubic phase InxGa1-xN/GaN multiple quantum wells on 3C-SiC/Si (001)
S.F.Chichibu; T.Onuma; T.Kitamura; T.Sota; S.P.DenBaars; S.Nakamura; and H.Okumura
International Workshop on Nitride Semiconductors 2002 (IWN2002), 22 Jul. 2002

Recombination dynamics of localized excitons in cubic InxGa1-xN/GaN multiple quantum wells on 3C-SiC/Si (001)
S.F.Chichibu; T.Onuma; T.Kitamura; T.Sota; S.P.DenBaars; S.Nakamura; and H.Okumura
44th Electronic Materials Conference (EMC-44), 26 Jun. 2002

Recombination mechanisms in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy
T.Onuma; T.Kitamura; T.Kuroda; S.F.Chichibu; A.Tackeuchi; T.Sota; S.P.DenBaars; S.Nakamura; Y.Ishida; and H.Okumura
21th Electronic Materials Symposium, 19 Jun. 2002

立方晶および六方晶InGaNの発光特性比較 －分極効果の有無と励起子局在効果－
14 Jun. 2002

ZnO薄膜のヘリコン波励起プラズマスパッタエピタキシー
28 Mar. 2002

Exciton Spectra of AlN Epitaxial Films
T.Onuma; S.F.Chichibu; T.Sota; K.Asai; S.Sumiya; T.Shibata; and M. Tanaka
Materials Research Society, 2001 Fall Meeting, 26 Nov. 2001

Similarities in the Optical Properties of hexagonal and cubic InGaN Quantum Wells
S.F.Chichibu; M.Sugiyama; T.Onuma; T.Kuroda; A.Tackeuchi; T.Sota; T.Kitamura; H.Nakanishi; Y.Ishida; H.Okumura; S.Keller; S.P.DenBaars; U.K.Mishra; and S.Nakamura
Materials Research Society, 2001 Fall Meeting, 26 Nov. 2001

立方晶In0.1Ga0.9N量子井戸における励起子局在効果
13 Sep. 2001

AlN薄膜の励起子スペクトル
13 Sep. 2001

ArXeのTPEPICOスペクトル
24 Mar. 2000

ZEKE分光によるN2+の回転準位の測定
24 Mar. 2000

N2の励起状態の寿命測定
24 Mar. 2000

希ガス分子のZEKE光電子分光
Sep. 1999