Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering, electronic materials

Natural sciences, Mathematical physics and basic theory, electron transport

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment, LED displays

Natural sciences, Semiconductors, optical and atomic physics, Light-emitting diodes

Basic and Applied Electron Devices
Fumio Hasegawa and Tohru Honda, Joint work
09 Sep. 2011
9784782855553

半導体デバイスの基礎と応用
2011
9784782855553

次世代光記録技術と材料
Others
Jan. 2004

面発光レーザの基礎と応用
Joint work
Jun. 1999

Properties, Processing and Application of Gallium Nitride and Related Semiconductors
K. Iga and T. Honda, Joint work
emis DATAREVIEWS SERIES NO. 23, INSPEC publications, The Institution of Electrical Engineers, London, United Kingdom, Apr. 1999

Properties, Processing and Application of Gallium Nitride and Related Semiconductors
1999

“InGaN/GaN superlattice underlayer for fabricating of red nanocolumn μ-LEDs with (10-11) plane InGaN/AlGaN MQWs
J. Yamada; A. Mizuno; Ta. Honda; K. Yoshida; R. Togashi; I. Nomura; T. Yamaguchi; T. Honda and K. Kishino
Nanotechnology, 14 Aug. 2023, [Reviewed]

Steady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1−xO,
T. Onuma; K. Kudo; M. Ono; W. Kosaka; K. Shima; K. Ishii; K. Kaneko; Y. Ota; T. Yamaguchi; K. Kojima; S. Fujita; S. F. Chichibu; T. Honda
Journal of Applied Physics, 13 Jul. 2023, [Reviewed]
Last

Growth of α-In2O3 films with different concentrations of In2O3 powder used as source precursor by mist chemical vapor deposition
A. Taguchi; T. Yamamoto; K. Kaneko; K. Goto; T. Onuma; T. Honda; Y. Kumagai; S. Fujita; and T. Yamaguchi
Japanese Journal of Applied Physics, 19 Apr. 2023, [Reviewed]

Vacuum Ultraviolet Emission Properties of Rocksalt- Structured MgZnO Microcrystals Prepared on Quartz Glass Substrates
W. Kosaka; S. Hoshi; K. Kudo; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; and T. Onuma
Physica Status Solidi (b), 02 Dec. 2021, [Reviewed]

Mist Chemical Vapor Deposition Growth of alfa-In2O3 Films Using Indium Oxide Powder as Source Precursor
A. Taguchi; S. Takahashi; A. Sekiguchi; K. Kaneko; S. Fujita; T. Onuma; T. Honda; and T. Yamaguchi
Physica Status Solidi (b), 10 Oct. 2021, [Reviewed]

Identification of free and bound exciton emission of MgO single crystal in vacuum ultraviolet spectral range
T. Onuma; W. Kosaka; K. Kudo; Y. Ota; T. Yamaguchi; K. Kaneko; S. Fujita; and T. Honda
Applied Physics Letters, 30 Sep. 2021, [Reviewed]
Last

Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in beta-Ga2O3 substrate and homoepitaxial film
T. Onuma; K. Sasaki; T. Yamaguchi; T. Honda; A. Kuramata; S. Yamakoshi; and M. Higashiwaki
Applied Physics Letters, 21 Jun. 2021, [Reviewed]

Effect of thermal annealing on photoexcited carriers in nitrogen-ion-implanted beta-Ga2O3 crystals detected by photocurrent measurement
M. Nakanishi; M. H. Wong; T. Yamaguchi; T. Honda; M. Higashiwaki; and T. Onuma
AIP Advances, 25 Mar. 2021, [Reviewed]

Impact of hydrochloric acid on the epitaxial growth of In2O3 films on (0001)α-Al2O3 substrates by mist CVD
Tomohiro Yamaguchi; Subaru Takahashi; Takanori Kiguchi; Atsushi Sekiguchi; Kentaro Kaneko; Shizuo Fujita; Hiroki Nagai; Mitsunobu Sato; Takeyoshi Onuma; and Tohru Honda
Applied Physics Express, 18 Jun. 2020, [Reviewed]
Last

Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates
Tomohiro Yamaguchi; Hiroki Nagai; Takanori Kiguchi; Nao Wakabayashi; Takuto Igawa; Toshimi Hitora; Takeyoshi Onuma; Tohru Honda; and Mitsunobu Sato
Applied Physics Express, 18 Jun. 2020, [Reviewed]

Photoelectron spectroscopic study on electronic state of corundum In2O3 epitaxial thin film grown by mist-CVD
Takahiro Nagata; Tomohiro Yamaguchi; Shigenori Ueda; Wei Yi; Jun Chen; Takuya Kobayashi; Hirokazu Yokoo; Tohru Honda; Yoshiyuki Yamashita; and Toyohiro Chikyow
Japanese Journal of Applied Physics, 04 May 2020, [Reviewed]

In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN
Tomohiro Yamaguchi; Takuo Sasaki; Seiji Fujikawa; Masamitu Takahasi; Tsutomu Araki; Takeyoshi Onuma; Tohru Honda and Yasushi Nanishi
Crystals, 28 Nov. 2019, [Reviewed]

Influence on thin MOCVD-grown GaN layer on underlying AlN template
Masatomo Sumiya; Kiyotaka Fukuda; Shuhei Yashiro and Tohru Honda
Journal of Crystal Growth, 27 Nov. 2019, [Reviewed]
Last

Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire
Masatomo Sumiya; Dickson Kindole; Kiyotaka Fukuda; Shuhei Yashiro; Kanji Takehana; Tohru Honda; and Yasutaka Imanaka
Physica Status Solidi, 08 Nov. 2019, [Reviewed]

Growth of InGaN films on hardness-controlled bulk GaN substrates
Masatomo Sumiya; Kiyotaka Fukuda; Hajime Fujikura; Taichiro Konno; Takayuki Suzuki; Tetsuji Fujimoto; Takehiro Yoshida; Shigenori Ueda; Kenji Watanabe; Tsuyoshi Ohnishi and Tohru Honda
Applied Physics Letters, 21 Oct. 2019, [Reviewed]
Last

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
Haruka Matsuura; Takeyoshi Onuma; Masatomo Sumiya; Tomohiro Yamaguchi; Bing Ren; Meiyong Liao; Tohru Honda and Liwen Sang
Applied Science, 27 Apr. 2019, [Reviewed]

Pure deep-ultraviolet cathodoluminescence from rocksalt-structured MgZnO grown with carbon-free precursors
Kyohei Ishii; Mizuki Ono; Kentaro Kaneko; Takeyoshi Onuma; Tohru Honda and Shizuo Fujita
Applied Physics Express, 11 Apr. 2019, [Reviewed]

Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photo thermal deflection spectroscopy
M Sumiya; K. Fukuda; S. Takashima; S. Ueda; T. Onuma; T. Yamaguchi; T. Honda and A. Uedono
Journal of Crystal Growth, 22 Jan. 2019, [Reviewed]

Structural evaluation of ions-implanted GaN films by photothermal deflection spectroscopy
Masatomo Sumiya; Kiyotaka Fukuda; Hideo Iwai; Tpmphiro Yamaguchi; Takeyoshi Onuma and Tohru Honda
AIP Advances, 28 Nov. 2018, [Reviewed]
Last

Modeling and interpretation of UV and blue luminescence intensity in beta-Ga2O3 by silicon and nitrogen doping
T.Onuma; Y.Nakata; K.Sasaki; T.Masui; T.Yamaguchi; T.Honda; A.Kuramata; S.Yamakoshi; M.Higashiwaki
Journal of Applied Physics, 20 Aug. 2018, [Reviewed]

Impact of local arrangement of Mg and Zn atoms in rocksalt-structured MgxZn1-xO alloys on bandgap and deep UV cathodoluminescence peak energies
T.Onuma; M.Ono; K.Ishii; K.Kaneko; T.Yamaguchi; S.Fujita; and T.Honda
Applied Physics Letters, 10 Aug. 2018, [Reviewed]
Last

Deep-Ultraviolet Luminescence of Rocksalt-Structured MgxZn1-xO (x > 0.5) Films on MgO Substrates
Kentaro Kaneko; Keiichi Tsumura; Kyohei Ishii; Takeyoshi Onuma; Tohru Honda and S. Fujita
Journal of ELECTRONIC MATERIALS, 25 Apr. 2018, [Reviewed]

Relation between electrical and optical properties of p-type NiO films
M. Ono; K. Saksaki; H. Nagai; T. Yamaguchi; M. Higashiwaki; A. Kuramata; S. Yamakoshi; M. Sato; T. Honda and T. Onuma
Physica Status Solidi (b), 02 Feb. 2018, [Reviewed]

Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates
Masatomo Sumiya; Naoki Toyomitsu; Yoshitaka Nakano; Jianyu Wang; Yoshitomo Harada; Liwen Sang; Takashi Sekiguchi; Tomohiro Yamaguchi and Tohru Honda
APL Materials, 27 Jan. 2017, [Reviewed]

Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals
T. Onuma; S. Saito; K. Sasaki; K. Goto; T. Masui; T. Yamaguchi; T. Honda; A. Kuramata; and M. Higashiwaki
Applied Physics Letters, 07 Mar. 2016, [Reviewed]

Improvement of strained InGaN solar cell performance with a heavily doped n+-GaN substrate
M. Sumiya; T. Honda; L. Sang; Y. Nakanon; K. Watanabe and F. Hasegawa
Physics Status Solidi (A), May 2015, [Reviewed]

Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga2O3 single crystal
Download PDF; R. Cuscó; N. Domènech-Amador; T. Hatakeyama; T. Yamaguchi; T. Honda and L. Artús
Journal of Applied physics, May 2015, [Reviewed]

Impacts of AlOx formation on emission properties of AlN/ GaN heterostructures
T. Onuma; Y. Sugiura; T. Yamaguchi; T. Honda and M. Higashiwaki
Applied Physics Express, Apr. 2015, [Reviewed]

Conductive and semi- transparent Cu thin film fabricated using molecular precursor solutions
H. Nagai; S. Mita; I. Takano; T. Honda and M. Sato
Materials Letters, Jan. 2015, [Reviewed]

Growth of crystallized AlOx on AlN/GaN heterostructure by in-situ RF-MBE
Y. Sugiura; T. Honda and M. Higashiwaki
Journal of Crystal Growth, Jul. 2014, [Reviewed]

総論：マイクロLED実用化展望とチップ集積化技術
10 Jan. 2019, [Invited]
Lead

Cathodoluminescence spectra of Ga-In-O polycrystalline films fabricated by molecular precursor method
Takeyoshi Onuma; Taihei Yasuno; Soichiro Takano; Ryousuke Goto; Shuhei Fujioka; Takumi Hatakeyama; Takuto Oda; Hiroki Hara; Chihiro Mochizuki; Hiroki Nagai; Tomohiro Yamaguchi; Mitsunobu Sato; Tohru Honda
Japanese Journal of Applied Physics, May 2014

Cathodoluminescence spectra of Ga-In-O polycrystalline films fabricated by molecular precursor method
Takeyoshi Onuma; Taihei Yasuno; Soichiro Takano; Ryousuke Goto; Shuhei Fujioka; Takumi Hatakeyama; Takuto Oda; Hiroki Hara; Chihiro Mochizuki; Hiroki Nagai; Tomohiro Yamaguchi; Mitsunobu Sato; Tohru Honda
Japanese Journal of Applied Physics, May 2014

Effect of (GaN/AlN) alternating-source-feeding buffer layer in GaN growth on Al2O3 and silicon by RF-MBE
Tomohiro Yamaguchi; Daiki Tajimi; Masato Hayashi; Tatsuhiro Igaki; Yohei Sugiura; Tohru Honda
Physica Status Solidi (C) Current Topics in Solid State Physics, Nov. 2013

Fabrication of Red, Green, and Blue Pixels Using Integrated GaN-Based Schottky-Type Light-Emitting Diodes
Tohru Honda; Tomohiro Yamaguchi; Naoyuki Sakai; Shuhei Fujioka; Yohei Sugiura
JAPANESE JOURNAL OF APPLIED PHYSICS, Aug. 2013

Correlation between blue luminescence intensity and resistivity in beta-Ga2O3 single crystals
T. Onuma; S. Fujioka; T. Yamaguchi; M. Higashiwaki; K. Sasaki; T. Masui; T. Honda
APPLIED PHYSICS LETTERS, Jul. 2013

Correlation between blue luminescence intensity and resistivity in beta-Ga2O3 single crystals
T. Onuma; S. Fujioka; T. Yamaguchi; M. Higashiwaki; K. Sasaki; T. Masui; T. Honda
APPLIED PHYSICS LETTERS, Jul. 2013

GaN growth on (111)Al substrates by CS-MBE and their chemical lift-off technique
Tohru Honda; Masato Hayashi; Yohei Sugiura; Itsuki Takezawa; Tomohiro Yamaguchi
Physica Status Solidi (C) Current Topics in Solid State Physics, Mar. 2013

Electron-beam incident-angle-resolved cathodoluminescence studies on bulk ZnO crystals
Takeyoshi Onuma; Tomohiro Yamaguchi; Tohru Honda
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5, 2013

Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation
T. Yamaguchi; N. Uematsu; T. Araki; T. Honda; E. Yoon; Y. Nanishi
Journal of Crystal Growth, 2013

Comparative study of surface recombination in hexagonal GaN and ZnO surfaces
T. Onuma; N. Sakai; T. Igaki; T. Yamaguchi; A. A. Yamaguchi; T. Honda
JOURNAL OF APPLIED PHYSICS, Sep. 2012

Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by surface modification using the aluminum facepack technique
Tohru Honda; Naoyuki Sakai; Shigetoshi Komiyama; Masato Hayashi; Tatsuhiro Igaki
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012

Surface recombination of hexagonal GaN crystals
Takeyoshi Onuma; Naoyuki Sakai; Takashi Okuhata; Atsushi A. Yamaguchi; Tohru Honda
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011

Photoluminescence and photoreactivity affected by oxygen defects in crystal-oriented rutile thin film fabricated by molecular precursor method
Hiroki Nagai; Sohei Aoyama; Hiroki Hara; Chihiro Mochizuki; Ichiro Takano; Tohru Honda; Mitsunobu Sato
Journal of Materials Science, Oct. 2010

Fabrication of c-axis oriented Ga-doped MgZnO-based UV transparent electrodes by molecular precursor method
Tohru Honda; Takuto Oda; Yoshihiro Mashiyama; Hiroki Hara; Mitsunobu Sato
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010

Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region
T. Honda; T. Kobayashi; S. Komiyama; Y. Mashiyama
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Jul. 2007

Fabrication of surface-oxidized GaN crystallites for UV electrolumineseent devices
Tohru Honda; Taichi Baba; Makiko Watanabe; Takashi Okuhata
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Jun. 2007

GaN films deposited on (111)Si by CS-MBD with re-evaporation enhancement technique for UV light-emitting devices
M. Arai; K. Sugimoto; S. Egawa; T. Baba; T. Honda
Physica Status Solidi (c), Apr. 2007, [Reviewed]

Low-temperature deposition of hexagonal GaN films for UV electroluminescent devices by CS-MBE technique
Tohru Honda; Shinichi Egawa; Koichi Sugimoto; Masatoshi Arai
JOURNAL OF CRYSTAL GROWTH, Apr. 2007

Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sources
M. Sawada; M. Sawadaishi; H. Yamamoto; M. Arai; T. Honda
JOURNAL OF CRYSTAL GROWTH, Apr. 2007

Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy
Tohru Honda; Toshiaki Kobayashi; Shinichi Egawa; Masaru Sawada; Koichi Sugimoto; Taichi Baba
JOURNAL OF CRYSTAL GROWTH, Mar. 2007

Integrated light-emitting diodes grown by MOVPE for flat panel displays
Tohru Honda; Toshiaki Kobayashi; Shinichi Egawa; Masaru Sawada; Koichi Sugimoto; Taichi Baba
JOURNAL OF CRYSTAL GROWTH, Jan. 2007

ZnO films fabricated by spin coating and their application to UV electroluminescent devices
K. Yoshioka; S. Egawa; T. Kobayashi; T. Baba; K. Sugimoto; M. Arai; H. Nomura; M. Sato; T. Honda
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1, 2007

GaN-based Schottky-type UV light-emitting diodes and their integration for flat-panel displays
Toshiaki Kobayashi; Shinichi Egawa; Masaru Sawada; Tohru Honda
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1, 2007

Fabrication of GaN-based electroluininescent devices on Al substrates and their application to red, green and blue pixels for flat-panel displays
Koichi Sugimoto; Shinichi Egawa; Masatoshi Arai; Tohru Honda
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1, 2007

GaN films deposited on (111)Si by CS-MBD with re-evaporation enhancement technique for UV light-emitting devices
Masatoshi Arai; Koichi Sugimoto; Shinichi Egawa; Taichi Baba; Tohru Honda
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5, 2007

Compound-source molecular beam epitaxy of GaN on Si at low temperature using GaN powder and ammonia as sources
T. Honda; M. Sawada; H. Yamamoto and M. Sawadaishi
Materials Research Society 2006 Fall Meeting, Boston MA, USA, 28 November － 1 December 2006, I7.23, Nov. 2006

Fabrication of surface-oxidized GaN crystallites for UV electroluminescent devices
T. Honda; T. Baba; M. Watanabe and T. Okuhata
International Workshop on Nitride Semiconductors 2006, Kyoto, Japan, 22 － 27 October 2006, WeOD2-1, Oct. 2006

Deposition of GaN films for UV electroluminescent devices by MBE technique
T. Honda; S. Egawa; K. Sugimoto; M. Arai and H. Kawanishi
International Conference on Molecular Beam Epitaxy, Tokyo, Japan, 2006, 3 -7 September, MoA3-6, Sep. 2006

Compound source molecular beam epitaxy of GaN using GaN powder and ammonia sources
M. Sawada; H. Yamamoto; M. Arai; T. Honda and H. Kawanishi
International Conference on Molecular Beam Epitaxy, Tokyo, Japan, 2006, 3 -7 September, ThP-15., Sep. 2006

Fabrication of GaN-base Electroluminescent devices operating in UV and violet spectral regions
K. Sugimoto; S. Egawa; T. Baba; M. Arai; K. Watanabe and T. Honda
13th International Workshop on Inorganic and Organic Electroluminescence & 2006 International Conference on the Science and Technology of Emissive Display and Lightning (EL2006), Jeju, Korea, 18 － 22 September, 2006, P-I-B3, Sep. 2006

GaN films deposited on (111)Si by CS-MBD with re-evaporation enhancement technique for UV light-emitting devices
M. Arai; K. Sugimoto; S. Egawa; T. Baba and T. Honda
33rd International Symposium on Compound Semiconductors, Vancouver, Canada, 2006, 13 － 17 August, P1.25, Aug. 2006

Electroluminescent devices fabricated using GaNO crystallites
T. Baba; M. Akiyama; S. Egawa; M. Watanabe and T. Honda
Physica Status Solidi (c), Aug. 2006, [Reviewed]

Cathodoluminescence spectra of surface-oxidized GaN crystallites
Tohru Honda; Miwako Akiyama; Taichi Baba; Makiko Watanabe
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Jul. 2006

Thermal effects for the light emission properties of GaN LEDs grown by MOVPE
T. Honda; T. Kobayashi; S. Egawa; M. Sawada; K. Sugimoto; T. Baba and H. Kawanishi
First International Symposium on Growth of III-V Nitrides, Linkoping, Sweden, 2006, 4 -7 June, TuP10, Jun. 2006

Fabrication of GaN-based electroluminescent devices on Al substrates and their application to RGB pixels for flat display panels
K. Sugimoto; S. Egawa; M. Arai; T. Honda and H. Kawanishi
6th International Symposium on Blue Laser and light-emitting Diodes, Montpellier, France, 2006, 15-19 May, P2.24, May 2006

GaN-based Schottky-type UV light-emitting diodes and their integration for flat display panels
T. Kobayashi; S. Egawa; M. Sawada; T. Honda and H. Kawanishi
6th International Symposium on Blue Laser and light-emitting Diodes, Montpellier, France, 2006, 15-19 May, P2.43, May 2006

Fabrication of ZnO films using a spin-coating technique and their application to UV electroluminescent devices
K. Yoshioka; S. Egawa; T. Kobayashi; T. Baba; T. Honda and H. Kawanishi
6th International Symposium on Blue Laser and light-emitting Diodes, Montpellier, France, 2006, 15-19 May, P1.47, May 2006

Electroluminescent devices using GaNO crystallites
T. Baba; M. Akiyama; S. Egawa; N. Hasunuma; M. Watanabe; T. Honda and H. Kawanishi
15th International Conference on Ternary and Multinary Compounds (2006). Wed P-19B, Mar. 2006

GaNで発光コンデンサを！？低コスト発光素子への挑戦
Jan. 2006

Electroluminescent devices using GaNO crystallites
2006

GaN-based Schottky-type UV light-emitting diodes and their integration for flat display panels
2006

Fabrication of GaN-based electroluminescent devices on Al substrates and their application to RGB pixels for flat display panels
2006

Fabrication of ZnO films using a spin-coating technique and their application to UV electroluminescent devices
2006

Thermal effects for the light emission properties of GaN LEDs grown by MOVPE
2006

Deposition of GaN films for UV electroluminescent devices by MBE technique
2006

Compound source molecular beam epitaxy of GaN using GaN powder and ammonia sources
2006

Fabrication of GaN-base Electroluminescent devices operating in UV and violet spectral regions
2006

UV electroluminescent devices fabricated using GaN crystallites
2006

Fabrication of surface-oxidized GaN crystallites for UV electroluminescent devices
2006

Compound-source molecular beam epitaxy of GaN on Si at low temperature using GaN powder and ammonia as sources
2006

Photoluminescence spectra of GaN films grown at low temperature by compound-source molecular beam epitaxy
Tohru Honda; Masaru Sawada; Toshiaki Kobayashi; Shinichi Egawa; Yohta Aoki; Miwako Akiyama; Hideo Kawanishi
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006

Electroluminescent devices fabricated using GaNO crystallites
Taichi Baba; Miwako Akiyama; Shinichi Egawa; Makiko Watanabe; Tohru Honda
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8, 2006

Relationship between excess Ga and residual oxides in amorphous GaN films deposited by compound source molecular beam epitaxy
N. Obinata; K. Ijima; M. Ishibiki; S. Egawa; K. Sugimoto and H. Kawanishi
Japanese Journal of Applied Physics, Dec. 2005, [Reviewed]

Low-temperature deposition of GaN films by compound source MBE
K. Sugimoto; N. Obinata; S. Egawa; M. Sawada; M. Arai; T. Honda and H. Kawanishi
British Association for Crystal Growth. (2005) A2, Sep. 2005

GaN films deposited by compound source MBE for light emitting devices
S. Egawa; T. Honda; K. Sugimoto N. Obinata; and H. Kawanishi
British Association for Crystal Growth. (2005) C5, Sep. 2005

Photoluminescence spectra of GaN layers grown at low temperature by compound source MBE
T. Honda; M. Sawada; T. Kobayashi; S. Egawa; Y. Aoki; M. Akiyama; and H. Kawanishi
The 6th International Conference on Nitride Semiconductors. Thp-088, Aug. 2005

GaN films deposited at low temperature on (111)Si by compound-source molecular beam epitaxy technique
T Honda; Y Aoki; M Akiyama; N Obinata; S Egawa; H Kawanishi
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Jul. 2005

GaN films deposited at low temperature on Al substrates by compound source molecular beam deposition for electroluminescent devices
S. Egawa; T. Honda; N. Obinata; K. Sugimoto and H. Kawanishi
International Quantum Electronics Conference 2005 and the Pasific Rim Conference on Laser and Electro-optics 2005, Jul. 2005

Fabrication of BAlGaInN Multi-layer or quantum well structure for blue to UV light emitter and its application to optical devices
H. Kawanishi and T. Honda
IPAP books, Feb. 2005, [Reviewed]

Fabrication of BAlGaInN Multi-layer or quantum well structure for blue to UV light emitter and its application to optical devices
2005

GaN films deposited at low temperature on Al substrates by compound source molecular beam deposition for electroluminescent devices
2005

Photoluminescence spectra of GaN layers grown at low temperature by compound source MBE
2005

GaN films deposited by compound source MBE for light emitting devices
2005

Low-temperature deposition of GaN films by compound source MBE
2005

Relationship between excess Ga and residual oxides in amorphous GaN films deposited by compound source molecular beam epitaxy
2005

Fabrication of GaN nanocrystallites and their application to UV/blue electroluminescent devices
T Honda; M Akiyama; S Egawa; Y Aoki; N Obinata; H Kawanishi
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Sep. 2004

Size selection of oxidized GaN crystallites and their cathodoluminescence properties
M Akiyama; S Egawa; K Matsukawa; T Honda; H Kawanishi
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Jul. 2004

Low-temperature growth of GaN layers on (0001)6H-SiC by compound source molecular beam epitaxy
T Honda; M Hama; Y Aoki; M Akiyama; N Obinata; H Kawanishi
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Jul. 2004

GaN-based UV/blue electroluminescent devices deposited on Si at low temperature
Y Aoki; M Hama; A Koike; M Tomonari; T Honda; H Kawanishi
5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS, 2004

Emission characteristics of CuGaS2-based light-emitting diode grown by metalorganic vapor phase epitaxy
T Honda; K Hara; J Yoshino; H Kukimoto
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, Sep. 2003

Amorphous GaN:Zn films deposited by molecular beam epitaxy
T. Honda; K. Shimanuki; M. Akiyama; Y. Amahori; H. Kimura and H. Kawanishi
Physica Status Solidi (c), Aug. 2003, [Reviewed]

Reflection high-energy electron diffraction pattern of GaN grown on 6H-SiC by metalorganic molecular beam epitaxy using AlGaN template
T Honda; H Kawanishi
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Jul. 2003

Amorphous GaN:Zn films deposited by molecular beam epitaxy
2003

Amorphous GaN-based electroluminescent devices operating in UV spectral region
T. Honda; Y. Inao; K. Konno; K. Mineo; S. Kumabe and H. Kawanishi
Physica Status Solidi (c), Dec. 2002, [Reviewed]

Deposition of amorphous GaN by compound source molecular beam epitaxy for electroluminescent devices
T Honda; Y Inao; K Konno; K Mineo; S Kumabe; H Kawanishi
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 2002

Application of amorphous GaN for elctroluminescence device
T. Honda and H. Kawanishi
Material Research Society Symposium Proceedings, Apr. 2002

Growth of CuGaS2-based Chalcopyrite compounds and their heterostructure by MOVPE
T. Honda; K. Hara; J. Yoshino and H. Kukimoto
IPAP Books, Feb. 2002, [Reviewed]

Growth of CuGaS2-based Chalcopyrite compounds and their heterostructure by MOVPE
2002

Application of amorphous GaN for elctroluminescence device
2002

Amorphous GaN-based electroluminescent devices operating in UV spectral region
2002

GaN growth by compound source molecular beam epitaxy
Tohru Honda; Kei Sato; Takanori Hashimoto; Masaki Shinohara; Hideo Kawanishi
Journal of Crystal Growth, 2002

GaN growth by compound source MBE using GaN powder
T. Honda; K. Sato; T. Hashimoto; M. Shinohara and H. Kawanishi
Physica Status Solidi (a), Dec. 2001, [Reviewed]

Emission Characteristics of GaN-based EL device with AC operation
T. Honda and H. Kawanishi
Material Research Society Symposium Proceedings, Apr. 2001

Emission Characteristics of GaN-based EL device with AC operation
2001

GaN growth by compound source MBE using GaN powder
T. Honda; K. Sato; T. Hashimoto; M. Shinohara; H. Kawanishi
Physica Status Solidi (a), 2001

GaN-based electroluminescence devices with AC operation using GaN powder
T. Honda; K. Maki and H. Kawanishi
IPAP Conference Series, Dec. 2000

Lattice constant of GaN grown on 6H-SiC by MOMBE
T Honda; N Fujita; K Maki; Y Yamamoto; H Kawanashi
APPLIED SURFACE SCIENCE, Jun. 2000

Excitonic emission of BGaN grown on (0001) 6H-SiC by metal-organic vapor-phase epitaxy
T Honda; M Kurimoto; M Shibata; H Kawanishi
JOURNAL OF LUMINESCENCE, May 2000

Band-gap energy and effective mass of BGaN
T Honda; M Shibata; M Kurimoto; M Tsubamoto; J Yamamoto; H Kawanishi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Apr. 2000

Initial growth monitoring of GaN epitaxy on 6H-SiC by MOMBE
T. Honda; N. Fujita; K. Maki and H. Kawanishi
Journal of Crystal Growth, Feb. 2000, [Reviewed]

GaN-based electroluminescence devices with AC operation using GaN powder
2000

Excitonic emission of BGaN grown on (0001) 6H-SiC by metal-organic vapor-phase epitaxy
Tohru Honda; Makoto Kurimoto; Masao Shibata; Hideo Kawanishi
Journal of Luminescence, 2000

Initial growth monitoring of GaN epitaxy on 6H-SiC by MOMBE
T. Honda; N. Fujita; K. Maki; H. Kawanishi
Journal of Crystal Growth, 2000

Possibility of strain control in AlN layer grown by MOVPE on (0001)6H-SiC with AlN/GaN buffer
M. Kurimoto; T. Nakada; Y. Ishihara; M. Shibata; T. Takano; J. Yamamoto; T. Honda and H. Kawanishi
Physica Status Solidi (a), Dec. 1999, [Reviewed]

Dependence on crystal quality on residual strain in strain-controlled thin AlN layer grown by metalorganic vapor phase epitaxy
Y. Ishihara; J. Yamamoto; M. Kurimoto; T. Takano; T. Honda and H. Kawanishi
Japanese Journal of Applied Physics, Nov. 1999, [Reviewed]

Design and fabrication process consideration of GaN-based surface emitting laser
T. Honda; T. Shirasawa; N. Mochida; A. Inoue; A. Matsutani; T. Sakaguchi; F. Koyama; H. Kawanishi and K. Iga
Electronics and Communication inJapan part 2, Jun. 1999, [Reviewed]

Tensile strain introduced in AlN layer grown by metal-organic vapor phase epitaxy on (0001)6H-SiC with (GaN/AlN) buffer
M. Kurimoto; T. Nakada; Y. Ishihara; M. Shibata; T. Honda and H. Kawanishi
Japanese Journal of Applied Physics, May 1999, [Reviewed]

Design and fabrication process consideration of GaN-based surface emitting laser
1999

Tensile strain introduced in AlN layer grown by metal-organic vapor phase epitaxy on (0001)6H-SiC with (GaN/AlN) buffer
M. Kurimoto; T. Nakada; Y. Ishihara; M. Shibata; T. Honda; H. Kawanishi
Japanese Journal of Applied Physics, 1999

Design and fabrication process consideration of GaN-based surface emitting laser
T. Honda; T. Shirasawa; N. Mochida; A. Inoue; A. Matsutani; T. Sakaguchi; F. Koyama; H. Kawanishi; K. Iga
Electronics and Communication inJapan part 2, 1999

Dependence on crystal quality on residual strain in strain-controlled thin AlN layer grown by metalorganic vapor phase epitaxy
Y. Ishihara; J. Yamamoto; M. Kurimoto; T. Takano; T. Honda; H. Kawanishi
Japanese Journal of Applied Physics, 1999

Possibility of strain control in AlN layer grown by MOVPE on (0001)6H-SiC with AlN/GaN buffer
M. Kurimoto; T. Nakada; Y. Ishihara; M. Shibata; T. Takano; J. Yamamoto; T. Honda; H. Kawanishi
Physica Status Solidi (a), 1999

MO-MBE Growth of GaN on 6H-SiC without Buffer Layer Using Preheated Nh3
T. Honda; Y. Yamamoto and H. Kawanishi
17th Electric Materials Symposium, Jul. 1998

GaN/BAlN heterostructure grown on a (0 0 0 1)6H-SiC substrate by metalorganic vapor phase epitaxy
M. Shibata; M. Kurimoto; J. Yamamoto; T. Honda; H. Kawanishi
Journal of Crystal Growth, 15 Jun. 1998

Origin of cracks in GaN/AlGaN DH structure grown on 6H-SiC by metalorganic vapor phase epitaxy
J Yamamoto; M Kurimoto; M Shibata; T Honda; H Kawanishi
JOURNAL OF CRYSTAL GROWTH, Jun. 1998

Interface control of GaN/AlGaN quantum well structures in MOVPE growth
T Shirasawa; N Mochida; A Inoue; T Honda; T Sakaguchi; F Koyama; K Iga
JOURNAL OF CRYSTAL GROWTH, Jun. 1998

Crystal orientation dependence of p-type contact resistance of GaN
N Mochida; T Honda; T Shirasawa; A Inoue; T Sakaguchi; F Koyama; K Iga
JOURNAL OF CRYSTAL GROWTH, Jun. 1998

Effect of piezo electric field on emission characteristics in GaN/AlGaN quantum wells
T Honda; T Miyamoto; T Sakaguchi; H Kawanishi; F Koyama; K Iga
JOURNAL OF CRYSTAL GROWTH, Jun. 1998

Direct growth of GaN on (0001) 6H-SiC by low-pressure MOVPE with a flow channel
M Kurimoto; M Shibata; J Yamamoto; M Tsubamoto; T Honda; H Kawanishi
JOURNAL OF CRYSTAL GROWTH, Jun. 1998

Optical Gain in BGaN Lattice-Matched to (0001)6H-SiC
T. Honda; M. Tsubamoto; Y. Kuga and H. Kawanishi
Mat. Res. Symp. Proc., Apr. 1998

P-type Doping for CuGaS2 Grown by MOVPE
T. Honda; K. Hara; J. Yoshino and H. Kukimoto
Inst. Phys. Conf. Ser., Apr. 1998, [Reviewed]

Optical and Carrier Confinement of UV Lasers Based on BAlGaN Quaternary Systems
M. Tsubamoto; J. Yamamoto; T. Honda and H. Kawanishi
15th Semiconductor Laser Symposium, Mar. 1998

Thermodynamic Analisys of MOVPE Growth of BAlGaN
1998

Optical and Carrier Confinement of UV Lasers Based on BAlGaN Quaternary Systems
1998

P-type Doping for CuGaS2 Grown by MOVPE
1998

MO-MBE Growth of GaN on 6H-SiC without Buffer Layer Using Preheated Nh3
1998

Thermodynamic Analisys of MOVPE Growth of BAlGaN
Y. Kuga; M. Tsubamoto; T. Honda; H. Kawanishi; A. Koukitu and H. Seki
Optoelectronics'98 3283, Physics and Simulation of Optoelectronics Devices VI, Jan. 1998

Optical Gain in BGaN Lattice-Matched to (0001)6H-SiC
T. Honda; M. Tsubamoto; Y. Kuga; H. Kawanishi
Mat. Res. Symp. Proc., 1998

Optical Gain in BGaN Lattice-Matched to (0001)6H-SiC
T. Honda; M. Tsubamoto; Y. Kuga and H. Kawanishi
Materials Research Society 1997 Fall Meeting, Dec. 1997

Low Pressure MOCVD Growth of GaAlN and Related Compound for UV Emission
H. Kawanishi; M. Kurimoto; J. Yamamoto; M. Shibata and T. Honda
IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, Nov. 1997

BGaNの有機金属気相成長における熱力学解析
Oct. 1997, [Reviewed]

Effect of Piezo Electric Field on Emission Characteristics in GaN/AlGaN Quantum Wells
T. Honda; T. Miyamoto; T. Sakaguchi; H. Kawanishi; F. Koyama and K. Iga
The Second International Conference on Nitride Semiconductors, Oct. 1997

GaN/BAlN Heterostructures Grown on (0001)6H-SiC by Metalorganic Vapor Phase Epitaxy
M. Shibata; M. Kurimoto; J. Yamamoto; T. Honda and H. Kawanishi
The Second International Conference on Nitride Semiconductors, Oct. 1997

Direct Growth of GaN on (0001)6H-SiC by Low Pressure MOVPE with Flow Channel
M. Kurimoto; M. Shibata; J. Yamamoto; M.Tsubamoto; T. Honda and H. Kawanishi
The Second International Conference on Nitride Semiconductors, Oct. 1997

Basic Consideration of Bx1Aly1Ga(1-x1-y2)N/Bx2Aly2Ga(1-x2-y2)N Double Hetero-Structure Lattice-Matched to (0001)6H-SiC
M. Tsubamoto; T. Honda; J. Yamamoto; M. Kurimoto; M. Shibata; M. Haruyama and H. Kawanishi
The Second International Conference on Nitride Semiconductors, Oct. 1997

Interface Control of GaN/AlGaN Quantum Well Structures in MOVPE Growth
T. Shirasawa; N. Mochida; A. Inoue; T. Honda; T. Sakaguchi; F. Koyama and K. Iga
The Second International Conference on Nitride Semiconductors, Oct. 1997

Crystal Orientation Dependence of p-Type Contact Resistance of GaN
N. Mochida; T. Honda; T. Shirasawa; A. Inoue; T. Sakaguchi; F. Koyama and K. Iga
The Second International Conference on Nitride Semiconductors, Oct. 1997

Origin of Cracks in GaN/AlGaN DH Structure Grown on 6H-SiC by Metalorganic Vapor Phase Epitaxy
J. Yamamoto; M. Kurimoto; M. Shibata; T. Honda and H. Kawanishi
The Second International Conference on Nitride Semiconductors, Oct. 1997

P-type Doping for CuGaS2 Grown by MOVPE
T. Honda; K. Hara; J. Yoshino and H. Kukimoto
11th International Conference on Ternary and Multinary Compounds, Sep. 1997

Piezo Effect on Emission Characteristics of GaN/AlGaN Quantum Wells
T. Honda; T. Miyamoto; T. Sakaguchi; F. Koyama and K. Iga
16th Elecric Materials Symposium, Jul. 1997

ZnO Buffer Layer on Si and Sapphire Substrates for GaN MOVPE
T. Shirasawa; T. Honda; F. Koyama and K. Iga
Mat. Res. Symp. Proc., Apr. 1997, [Reviewed]

Design Consideration of GaN-Based Surface Emitting Lasers
T. Honda; F. Koyama and K. Iga
Mat. Res. Symp. Proc., Apr. 1997, [Reviewed]

Design of Low Threshold GaN-Based Quantum Well Surface Emitting Lasers
T. Honda; A. Katsube; T. Sakaguchi; F. Koyama and K. Iga
Proc. Topical Nitride Workshops Ed. By I. Akasaki and K. Onabe (Pergamon Press,1997), Apr. 1997, [Reviewed]

Reactive Ion Beam Etching of GaN Grown by MOVPE
K. Saotome; A. Matsutani; T. Honda; F. Koyama and K. Iga
Mat. Res. Symp. Proc., Apr. 1997, [Reviewed]

MgO/SiO2 Dielectric Multilayer Reflectors Formed by Electron-Beam Evapolation for GaN Surafce Emitting Lasers
T. Sakaguchi; T. Honda; A. Katsube; F. Koyama and K. Iga
Proc. Topical Nitride Workshops Ed. By I. Akasaki and K. Onabe (Pergamon Press,1997), Apr. 1997, [Reviewed]

GaN Growth by MOVPE on Ozonized Sapphire (0001) Substrates
T. Honda; A. Inoue; M. Mori; T. Shihrasawa; K. Saotome; N. Mochida; T. Sakaguchi; F. Koyama and K. Iga
14th Smiconductor Symposium, Mar. 1997

GaN Growth by MOVPE on Ozonized Sapphire Substrates
T. Honda; A. Inoue; M. Mori; T. Shirasawa; K. Saotome; N. Mochida; T. Sakaguchi; F. Koyama and K. Iga
Fourth Workshop on Wide Gap Nitrides, Mar. 1997

Diode Characetristics of Li3N Diffused ZnSe Grown by MOVPE
T. Honda; S. W. Lim; K. Inoue; K. Hara; H. Munekata; H. Kukimoto; F. Koyama and K. Iga
Journal of Crystal Growth, Feb. 1997, [Reviewed]

GaN系面発光レーザの設計と製作技術に関する基礎検討
Jan. 1997, [Reviewed]

GaN Growth by MOVPE on Ozonized Sapphire Substrates
1997

GaN Growth by MOVPE on Ozonized Sapphire (0001) Substrates
1997

MgO/SiO2 Dielectric Multilayer Reflectors Formed by Electron-Beam Evapolation for GaN Surafce Emitting Lasers
1997

ZnO Buffer Layer on Si and Sapphire Substrates for GaN MOVPE
1997

Design of Low Threshold GaN-Based Quantum Well Surface Emitting Lasers
1997

Reactive Ion Beam Etching of GaN Grown by MOVPE
1997

Design Consideration of GaN-Based Surface Emitting Lasers
1997

Piezo Effect on Emission Characteristics of GaN/AlGaN Quantum Wells
1997

P-type Doping for CuGaS2 Grown by MOVPE
1997

Origin of Cracks in GaN/AlGaN DH Structure Grown on 6H-SiC by Metalorganic Vapor Phase Epitaxy
1997

Basic Consideration of Bx1Aly1Ga(1-x1-y2)N/Bx2Aly2Ga(1-x2-y2)N Double Hetero-Structure Lattice-Matched to (0001)6H-SiC
1997

Interface Control of GaN/AlGaN Quantum Well Structures in MOVPE Growth
1997

Direct Growth of GaN on (0001)6H-SiC by Low Pressure MOVPE with Flow Channel
1997

GaN/BAlN Heterostructures Grown on (0001)6H-SiC by Metalorganic Vapor Phase Epitaxy
1997

Crystal Orientation Dependence of p-Type Contact Resistance of GaN
1997

Low Pressure MOCVD Growth of GaAlN and Related Compound for UV Emission
1997

Optical Gain in BGaN Lattice-Matched to (0001)6H-SiC
1997

Diode characteristics of Li3N-diffused ZnSe grown by MOVPE
T Honda; SW Lim; K Inoue; K Hara; H Munekata; H Kikimoto; F Koyama; K Iga
JOURNAL OF CRYSTAL GROWTH, Jan. 1997

ZnO Buffer Layer on Si and Sapphire Substrates for GaN MOVPE
T. Shirasawa; T. Honda; F. Koyama; K. Iga
Mat. Res. Symp. Proc., 1997

Effect of Piezo Electric Field on Emission Characteristics in GaN/AlGaN Quantum Wells
T. Honda; T. Miyamoto; T. Sakaguchi; H. Kawanishi; F. Koyama; K. Iga
The Second International Conference on Nitride Semiconductors, 1997

Reactive Ion Beam Etching of GaN Grown by MOVPE
K. Saotome; A. Matsutani; T. Honda; F. Koyama and K. Iga
Materials Research Society 1996 Fall Meeting, Dec. 1996

Design Consideration of GaN-Based Surface Emitting Lasers
T. Honda; F. Koyama and K. Iga
Materials Research Society 1996 Fall Meeting, Dec. 1996

Precleaning of Al2O3 Substrate for MOVPE Growth of GaN Layers
T. Honda; K. Saotome; T. Shirasawa; M. Mori; N. Mochida; A. Inoue; T. Sakaguchi; F. Koyama and K. Iga
5th Meeting of Silicon Carbide and Related Widegap Materials, Dec. 1996

Formation of highly conductive p-type ZnSe using Li3N diffusion
T Honda; SW Lim; K Yanashima; K Inoue; K Hara; H Munekata; H Kukimoto; F Koyama; K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Jul. 1996

Reactive Ion Beam Etching of GaN Grown by MOVPE on Sapphire
K. Saotome; A. Matsutani; T. Shirasawa; M. Mori; T. Honda; T. Sakaguchi; F. Koyama and K. Iga
15th Electric Materials Symposium, Jul. 1996

Growth Rate and Crystal Quality of GaN Grown by MOVPE
M. Mori; T. Honda; T. Shirasawa; K. Saotome; T. Sakagichi; F. Koyama and K. Iga
15th Electric Materials Symposium, Jul. 1996

Formation of ZnO Buffer Layer on Si for GaN Growth by MOVPE
T. Shirasawa; T. Honda; M. Mori; K. Saotome; T. Sakaguchi; F. Koyama and K. Iga
15th Electric Materials Symposium, Jul. 1996

Characteristics Temperature Estimation for GaN-Based Lasers
T. Honda; T. Sakaguchi; K. Saotome; T. Shirasawa; M. Mori; F. Koyama and K. Iga
15th Electric Materials Symposium, Jul. 1996

Dielectric Multilayer Reflector for ZnSe-Based Blue Surface Emitting Lasers
T. Shirasawa; M. Mori; K. Saotome; A. Katsube; T. Honda; T. Sakaguchi; F. Koyama and K. Iga
Blue Laser and Light Emitting Diodes, Ed. A. Yoshikawa et al. (IOS Press, Amsterdam), Jun. 1996, [Reviewed]

Fundamental Study on Surface Emitting Lasers in Green to Ultraviolet Spectral Region
T. Honda; T. Sakaguchi; T. Shirasawa; F. Koyama and K. Iga
13th Semiconductor Laser Symposium, Mar. 1996

Design of GaN-Based Surface Emitting Lasers with Low Threshold Operation
T. Honda; A. Katsube; T. Sakaguchi; F. Koyama and K. Iga
Institute of Physics Conference Series, Feb. 1996, [Reviewed]

Design and fabrication of ZnSe-based blue/green surface emitting lasers
T Honda; T Sakaguchi; F Koyama; K Iga; K Inoue; H Munekata; H Kukimoto
JOURNAL OF CRYSTAL GROWTH, Feb. 1996

Design of GaN-Based Surface Emitting Lasers with Low Threshold Operation
1996

Fundamental Study on Surface Emitting Lasers in Green to Ultraviolet Spectral Region
1996

Estimation of Etched Reflectivity of GaN-Based Semiconductor Lasers
1996

Dielectric Multilayer Reflector for ZnSe-Based Blue Surface Emitting Lasers
1996

Characteristics Temperature Estimation for GaN-Based Lasers
1996

Growth Rate and Crystal Quality of GaN Grown by MOVPE
1996

Reactive Ion Beam Etching of GaN Grown by MOVPE on Sapphire
1996

Diode Characetristics of Li3N Diffused ZnSe Grown by MOVPE
1996

Formation of ZnO Buffer Layer on Si for GaN Growth by MOVPE
1996

Design Consideration of GaN-Based Surface Emitting Lasers
1996

ZnO Buffer Layer on Si and Sapphire Substrates for GaN MOVPE
1996

Precleaning of Al2O3 Substrate for MOVPE Growth of GaN Layers
1996

Design and fabrication of ZnSe-based blue/green surface emitting lasers
Tohru Honda; Takahiro Sakaguchi; Fumio Koyama; Kenichi Iga; Kousuke Inoue; Hiro Munekata; Hiroshi Kukimoto
Journal of Crystal Growth, 1996

Estimation of Etched Reflectivity of GaN-Based Semiconductor Lasers
K. Saotome; T. Honda; A. Matsutani; F. Koyama; K. Iga
The International symposium on Blue Laser and Light Emitting Diodes, 1996

Dielectric multilayer reflector for ZnSe-based blue surface emitting lasers
T Shirasawa; M Mori; K Saotome; A Katsube; T Honda; T Sakaguchi; F Koyama; K Iga
BLUE LASER AND LIGHT EMITTING DIODES, 1996

Estimation of etched facet reflectivity of GaN-based semiconductor lasers
K Saotome; T Honda; A Matsutani; F Koyama; K Iga
BLUE LASER AND LIGHT EMITTING DIODES, 1996

Reactive Ion Beam Etching of GaN Grown by MOVPE
K. Saotome; A. Matsutani; T. Honda; F. Koyama; K. Iga
Materials Research Society 1996 Fall Meeting, 1996

Design and Fabrication of Mirror for GaN-Based Surface Emitting Lasers
T. Honda; A. Katsube; K. Saotome; T. Shirasawa; M. Mori; T. Sakaguchi; F. Koyama and K. Iga
4th Meeing of Silicon Carbide and Related Widegap Materials, Dec. 1995

MgO/SiO2 Dielectric Multilayer Reflectors for GaN-Based Ultraviolet Surafce Emitting Lasers
T. Sakaguchi; T. Honda; A. Katsube; F. Koyama and K. Iga
LEOS95 Annual Meeting Conference Proceedings, Nov. 1995

OPTICALLY PUMPED ZNSE-BASED VERTICAL-CAVITY SURFACE EMITTER WITH SIO2/TIO2 MULTILAYER REFLECTOR
T HONDA; T SAKAGUCHI; F KOYAMA; K IGA; K YANASHIMA; K INOUE; H MUNEKATA; H KUKIMOTO
JOURNAL OF APPLIED PHYSICS, Oct. 1995

Design of Low Threshold GaN-Based Quantum Well Surface Emitting Laser
A. Katsube; T. Honda; T. Sakaguchi; F. Koyama and K. Iga
Topical Workshop on III-V Nitrires, Sep. 1995

Design of GaN-Based Surface Emitting Lasers with Low Threshold Operation
T. Honda; A. Katsube; T. Sakaguchi; F. Koyama and K. Iga
International Conference on Silicon Carbide and Related Materials, Sep. 1995

THRESHOLD ESTIMATION OF GAN-BASED SURFACE-EMITTING LASERS OPERATING IN ULTRAVIOLET SPECTRAL REGION
T HONDA; A KATSUBE; T SAKAGUCHI; F KOYAMA; K IGA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Jul. 1995

ZnSe-based Vertical Fabry Perot Cavity for Blue Surface Emitting Lasers
T. Honda; K. Inoue; H. Munekata; H. Kukimoto; F. Koyama and K.Iga
The Pacific Rim Conference on Lasers and Electro-Optics, Jul. 1995

Ohmic Contact Formation for p-type ZnSe Using Li3N Diffusion
T. Honda; S. W. Lim; K. Inoue; K. Hara; H. Munekata; H. Kukimoto; F. Koyama and K. Iga
14th Electric Materials Symposium, Jul. 1995

Possibility of GaN-/ZnSe-Based Vertical Cavity Surface Emitting Lasers Operating in Short Wavelength Spectral Region
T. Honda; F. Koyama and K. Iga
57th Group of Microoptics Meeting､Optical Society of Jaopan, Jul. 1995

Li3N拡散を用いたp型ZnSeへのオーミックコンタクト
Mar. 1995

電子ビーム蒸着によるGaN系面発光レーザ用誘電体多層膜反射鏡
Mar. 1995

Basic Design of GaN-Based Surface Emitting Lasers
T.Honda; T.Sakaguchi; A. Katsube; F. Koyama and K.Iga
12th Smiconductor Laser Symposium, Mar. 1995

Basic Design of GaN-Based Surface Emitting Lasers
1995

ZnSe-based Vertical Fabry Perot Cavity for Blue Surface Emitting Lasers
1995

Ohmic Contact Formation for p-type ZnSe Using Li3N Diffusion
1995

Possibility of GaN-/ZnSe-Based Vertical Cavity Surface Emitting Lasers Operating in Short Wavelength Spectral Region
1995

MgO/SiO2 Dielectric Multilayer Reflectors Formed by Electron-Beam Evapolation for GaN Surafce Emitting Lasers
1995

Design of GaN-Based Surface Emitting Lasers with Low Threshold Operation
1995

MgO/SiO2 Dielectric Multilayer Reflectors for GaN-Based Ultraviolet Surafce Emitting Lasers
1995

Design and Fabrication of Mirror for GaN-Based Surface Emitting Lasers
1995

Design of Low Threshold GaN-Based Quantum Well Surface Emitting Laser
A. Katsube; T. Honda; T. Sakaguchi; F. Koyama; K. Iga
Topical Workshop on III-V Nitrires, 1995

MgO/SiO2 Dielectric Multilayer Reflectors Formed by Electron-Beam Evapolation for GaN Surafce Emitting Lasers
T. Sakaguchi; T. Honda; A. Katsube; F. Koyama; K. Iga
Topical Workshop on III-V Nitrires, 1995

Fundamental Design of GaN-Based Surface Emitting Lasers
T.Honda; T.Sakaguchi; A. Katsube; F. Koyama and K.Iga
Nitride Smiconductor Seminar, Dec. 1994

Highly‐doped p‐ZnSe Formation by Li3N Diffusion
S. W. Lim; T. Honda; K. Yanashima; F. Koyama and K. Iga
IEEE Lasters and Electro‐Optics Society Annal Meeting，Boston，MA，USA, Nov. 1994

HIGH P-TYPE DOPING OF ZNSE USING LI3N DIFFUSION
SW LIM; T HONDA; F KOYAMA; K IGA; K INOUE; K YANASHIMA; H MUNEKATA; H KUKIMOTO
APPLIED PHYSICS LETTERS, Nov. 1994

Highly Conduitive p-type ZnSe Formation Using Li3N Diffusion
S. W. Lim; T. Honda; K. Yanashima; K. Inoue; H. Munekata; H. Kukimoto; F. Koyama and K. Iga
The 1994 Intrenational Conference on Solid State Devices and Materials,Yokohama,Japan, Aug. 1994

FABRICATION OF A ZNSE-BASED VERTICAL FABRY-PEROT CAVITY USING SIO2/TIO2 MULTILAYER REFLECTORS AND RESONANT EMISSION CHARACTERISTICS
T HONDA; K YANASHIMA; J YOSHINO; H KUKIMOTO; F KOYAMA; K IGA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Jul. 1994

Formation of p-ZnSe Contact Layaer by (Li,N) Diffusion for MOCVD-Grown II-VI Injection Lasers
S. W. Lim; T. Honda; K. Yanashima; K. Inoue; H. Munekata; H. Kukimoto; F. Koyama and K. Iga
The 5th Optoelectronics Conference, Jul. 1994

Threshold Estimation of GaN-based Surface Emitting Lasers Operating in Blue-Ultraviolet Spectral Region
T.Honda; T.Sakaguchi; A. Katsube; F. Koyama and K.Iga
13th Symposium on Alloy Semiconductor Physics and Electronics, Jul. 1994

SELECTIVE ETCHING OF GAAS FOR ZNSE BASED SURFACE-EMITTING LASERS
T HONDA; K YANASHIMA; F KOYAMA; H KUKIMOTO; K IGA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Feb. 1994

Formation of p-ZnSe Contact Layaer by (Li,N) Diffusion for MOCVD-Grown II-VI Injection Lasers
1994

Threshold Estimation of GaN-based Surface Emitting Lasers Operating in Blue-Ultraviolet Spectral Region
1994

Highly Conduitive p-type ZnSe Formation Using Li3N Diffusion
1994

Fundamental Design of GaN-Based Surface Emitting Lasers
1994

Metalorganic Vapor Phase Epitaxy of CuAlxGa1-x(SySe1-y)2
T. Honda; H. Akita; S. Kitoh; K. Hara; J. Yoshino and H. Kukimoto
Japanese Journal of Applied Physics, Apr. 1993, [Reviewed]

Metalorganic Vapor Phase Epitaxy of CuGaS2 Using Ditertiary-buthylsulfide
T. Honda; H. Otoma; K. Hara; J. Yoshino and H. Kukimoto
Japanese Journal of Applied Physics, Apr. 1993, [Reviewed]

Metalorganic Vapor Phase Epitaxy of CuGaS2 Using Ditertiary-buthylsulfide
1993

Metalorganic Vapor Phase Epitaxy of CuAlxGa1-x(SySe1-y)2
T. Honda; H. Akita; S. Kitoh; K. Hara; J. Yoshino; H. Kukimoto
Japanese Journal of Applied Physics, 1993

GROWTH OF CUGAS2 BY ALTERNATING-SOURCE-FEEDING MOVPE
H OTOMA; T HONDA; K HARA; J YOSHINO; H KUKIMOTO
JOURNAL OF CRYSTAL GROWTH, Dec. 1991

Growth of CuGaS2 by Alternating-Source-Feeding MOVPE
1991

Growth of CuGaS2 by Alternating-Source-Feeding MOVPE
H. Otoma; T. Honda; K. Hara; J. Yoshino; H. Kukimoto
The Seventh Intenational Conference on Vapor Growth and Epitaxy, Nagoya, Japan, 1991

Metalorganic Vapor Phase Epitaxy of Wide-Gap I-III-VI₂ Compounds
HARA Kazuhiko; SHINOZAWA Taro; HONDA Tohru; YOSHINO Junji; KUKIMOTO Hiroshi
OYOBUTURI, 1989

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(10-11)上GaInN/GaInN MQWs成長による高効率赤色発光
21 Sep. 2023

その場XRD-RSMを用いたGaN上GaInN Buffer層挿入GaInN RF-MBE成長－GaInNの成長温度依存性－
21 Sep. 2023

各種In系材料を出発原料に用いたMist CVD成長におけるα-In2O3薄膜の電気的特性に関する評価
21 Sep. 2023

高Mg組成岩塩構造MgZnO薄膜のミストCVD成長
21 Sep. 2023

Mist CVD法によるα-GIO混晶成長とα線検出応用に向けた検討
21 Sep. 2023

Mist CVD法Sn-doped α-Ga2O3薄膜成長におけるSn溶液の静置時間変化
21 Sep. 2023

III族不純物ドープMgO薄膜の正孔捕獲中心
20 Sep. 2023

Growth of AZO thin films from pressed-sintered powder targets under subatmospheric conditions
R. G. B. Madera; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi; M. R. Vasquez Jr.
20th International Conference on Crystal Growth and Epitaxy (ICCGE20), 03 Aug. 2023

Growth of GaInN/GaInN MQWs on nanocolumns with thick GaInN buffer layer using RF-MBE
H. Akagawa; J. Yamada; T. Yamaguchi; R. Togashi; T. Onuma; I. Nomura; T. Honda; K. Kishino
20th International Conference on Crystal Growth and Epitaxy (ICCGE20), 31 Jul. 2023

発光径Φ5μmのナノコラム発光デバイスの作製
17 Mar. 2023

N2 および Ar/H2 アニールによる SnOx 薄膜の還元状態の比較
17 Mar. 2023

Ar/N2混合ガス中スパッタリングで堆積したSnOx薄膜におけるN2濃度の影響
17 Mar. 2023

Mist CVD法による各種In系粉末を出発原料に用いたα-In2O3の成長機構に関する検討
16 Mar. 2023

Mist CVD法により成長したα-In2O3薄膜の低キャリア濃度化とMOSFET製作
16 Mar. 2023

窒素RFパワー変化によるナノコラム結晶のGaInNバッファ層形状均一化の検討
15 Mar. 2023

その場XRD-RSMを用いたGaN上GaInN Buffer層挿入GaInN RF-MBE成長における格子緩和過程観察
15 Mar. 2023

岩塩構造酸化マグネシウム亜鉛薄膜の真空紫外領域での光電流スペクトル（II）
15 Mar. 2023

ミストCVD法によるIII族ドープ岩塩構造MgZnO薄膜成長
15 Mar. 2023

Crystal growth of Cu3N by mist CVD with ethylenediamine
S. Yoshida; H. Nagai; T. Yamaguchi; T. Onuma; T. Honda
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Growth of ZnO thin films via magnetron sputtering using a custom-made sintered target
R. G. B. Madera; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi; M. R. Vasquez Jr
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Study for composition control in mist CVD growth of α-GIO alloys
K. Yamada; T. Yamaguchi; T. Onuma; T. Honda
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Investigation on the stability of source solution for the α-In2O3 growth by mist CVD
T. Yamamoto; A. Taguchi; R. Yamada; H. Nagai; T. Onuma; T. Honda; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Roles of In doping in rocksalt-structured MgZnO films grown by mist CVD method
M. Matsuda; K. Ogawa; Y. Ota; T. Yamaguchi; K. Kaneko; S. Fujita; T. Honda; T. Onuma
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Realization of high mobility in α-In2O3 film grown by mist CVD with different concentration of In2O3 powder as source precursor
A. Taguchi; T. Onuma; T. Honda; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

TEM evaluation of in-situ nitrogen plasma irradiated GaInN
A. Tokushige; S. Ohno; Y. Hayakawa; T. Honda; T. Onuma; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Electrical property and valence band offset in conductive MgNiO on sapphire substrates
M. Murayama; A. Ishikawa; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Growth and characterization of AlGaN and multiple quantum wells with varying III/V ratios by RF-MBE
M. Hayasaki; T. Yamaguchi; T. Yamaguchi; T. Honda; T. Onuma
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Structural analysis in epitaxial growth of GaInN by RF-MBE using XRD-RSM
J. Takeuchi; T. Sasaki; H. Yokoyama; T. Onuma; T. Honda; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 25 Nov. 2022

Twin-free α-Ga2O3 films grown by mist CVD on (0001) α-Al2O3 substrates
R. Yamada; A. Kobayashi; K. Ueno; A. Sekiguchi; T. Onuma; T. Honda; H. Fujioka; T. Yamaguchi
The 21st International Symposium on Advanced Technology (ISAT-21), 24 Nov. 2022

Fabrication of monolithic blue micro-LED pixels and investigation of full colorization
H. Chikui; S. Takeda; T Onuma; T. Yamaguchi; T. Honda
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 17 Nov. 2022

Roles of In doped in MgZnO films grown by mist CVD method
M. Matsuda; K. Ogawa; Y. Ota; T. Yamaguchi; K. Kaneko; S. Fujita; T. Honda; T. Onuma
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 15 Nov. 2022

Photocurrent spectra of rocksalt-structured MgZnO films in vacuum UV spectral range
H. Kusaka; W. Kosaka; K. Ogawa; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita; T. Onuma
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 15 Nov. 2022

Realization of near-band-edge cathodoluminescence in 190 nm wavelength range by rocksalt-structured MgZnO epitaxial films
T. Onuma; K. Ogawa; W. Kosaka; H. Kusaka; Y. Ota; K. Kaneko; T. Yamaguchi; S. Fujita; T. Honda
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 14 Nov. 2022

Impact of gas type on formation of twin structure in the growth of a-Ga2O3 by mist chemical vapor deposition
R. Yamada; A. Kobayashi; K. Ueno; A. Sekiguchi; T. Onuma; T. Honda; H. Fujioka; T. Yamaguchi
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 14 Nov. 2022

Growth and optical characteristics of high-Al content AlGaN on AlN templates by RF-MBE,under metal-rich conditions
M. Hayasaki; N. Tachibana; M. Hashimoto; T. Yamaguchi; T. Yamaguchi; T. Honda; T. Onuma
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 14 Nov. 2022

Local composition distribution in high Al content AlGaN/AlN quantum wells grown by RF-MBE
M. Hayasaki; T. Yamaguchi; T. Yamaguchi; T. Honda; T. Onuma
The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), 14 Nov. 2022

Mist CVD 法により成長した酸化インジウムの高移動度化に伴う新機能開拓
12 Nov. 2022

Mist CVD 法 α-Ga2O3成長時に形成される双晶抑制に関する研究
12 Nov. 2022

Mist CVD 法 α-In2O3 成長における原料溶液中の反応に関する検討
12 Nov. 2022

RF-MBE による GaInN 成長における歪み緩和制御
12 Nov. 2022

岩塩構造 MgZnO/MgO ヘテロ接合の製作とバンドアライメント解析
12 Nov. 2022

RF-MBE による β-Ga2O3(-201)基板上への AlN 及び GaN 成長において成長前処理が成長層に及ぼす影響
12 Nov. 2022

Mist CVD 法を用いた Cu3N 成長における原料溶液の検討
12 Nov. 2022

顕微フォトルミネッセンス分光による β-Ga2O3 結晶の微細構造の可視化検討
12 Nov. 2022

in-situ 窒素プラズマ照射された MBE 成長 GaInN の TEM 評価
12 Nov. 2022

RF-MBE 成長した Ga 極性及び N 極性 GaN 薄膜の比較検討
12 Nov. 2022

Microstructural characterization of β-Ga2O3,crystals by photoluminescence mapping measurements
K. Shoji; M. Nakanishi; M. Kasu; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 25 Oct. 2022

Impact of RF power on electrical property of NiO films grown by RF magnetron spattering
Akito Ishikawa; M. Murayama; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 25 Oct. 2022

RF-MBE growth of Mg doped GaN on β-Ga2O3,(-201) substrates
T. Yamaguchi; M. Hayasaki; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 24 Oct. 2022

P-type conductivity in MgxNi1-xO films deposited on sapphire substrates by RF magnetron sputtering
M. Murayama; A. Ishikawa; T. Yamaguchi; T. Honda; K. Sasaki; A. Kuramata; T. Onuma
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 24 Oct. 2022

Growth of α-In2O3 films with different concentrations of In2O3 powder used as source precursor by mist CVD
A. Taguchi; K. Kaneko; K. Goto; T. Onuma; T. Honda; Y. Kumagai; S. Fujita; T. Yamaguchi
The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), 24 Oct. 2022

Temperature dependence of carrier concentration and Hall mobility in alpha-In2O3 films grown by mist CVD method
A. Taguchi; T. Onuma; K. Goto; K. Kaneko; Y. Kumagai; T. Honda; S. Fujita; T. Yamaguchi
41st Electronic Materials Symposium, 19 Oct. 2022

Analyses of Band Alignment in Rocksalt-structured MgZnO/MgO Interface Grown by Mist CVD
M. Matsuda; K. Ogawa; Y. Ota; T. Yamaguchi; K. Kaneko; S. Fujita; T. Honda; T. Onuma
41st Electronic Materials Symposium, 19 Oct. 2022

Importance of dissolving source precursor of Ga(C5H7O2)3 with HCl in mist CVD for α-Ga2O3 growth
R. Yamada; A. Sekiguchi; T. Onuma; T. Honda; T. Yamaguchi
2022 International Conference on Solid State Devices and Materials (SSDM202), 27 Sep. 2022

ナノコラム形状制御技術を用いた赤色発光ナノコラムμ-LED構造の成長と作製
23 Sep. 2022

ミスト化学気相成長法コランダム構造酸化ガリウム薄膜のガス種による双晶形成への影響
23 Sep. 2022

ミストCVD法によるInドープMgZnO薄膜の成長
23 Sep. 2022

岩塩構造酸化マグネシウム亜鉛薄膜の真空紫外領域での光電流スペクトル
23 Sep. 2022

InドープMgO薄膜の発光特性
23 Sep. 2022

その場XRD-RSM を用いたRF-MBE GaInNヘテロエピタキシャル成長における緩和過程観察
22 Sep. 2022

RF-MBEによるInN緩衝層を用いたGaInNの格子緩和制御
22 Sep. 2022

Mist CVD法を用いたCu3N成長における安定した原料供給の検討
21 Sep. 2022

窒素アニール還元反応によるSnOx薄膜の局所結合状態
21 Sep. 2022

Ar/N2混合雰囲気でスパッタ成膜した部分窒化SnOx­­­の特性評価
21 Sep. 2022

Mist CVD法により成長したα-In2O3薄膜のキャリア濃度とホール移動度の温度依存性
21 Sep. 2022

RF-MBE成長赤色発光MQWにおけるGaInN下地層挿入の効果
20 Sep. 2022

赤色ナノコラム成長におけるGaInNバッファ層のⅤ/Ⅲ族比依存性
20 Sep. 2022

Mist CVD法による(Ga1-xInx)2O3混晶成長の組成制御に向けた検討
20 Sep. 2022

Mist CVD 法における原料溶液中の反応がα-In2O3成長に与える影響
20 Sep. 2022

Mist CVDを用いたGTO薄膜成長におけるSnドープ量変化の影響
03 Dec. 2022

Mist CVDβ型酸化ガリウム成長に塩酸が与える影響
03 Dec. 2022

RF-MBE法によるAlGaN/AlNヘテロ構造と量子井戸構造の成長と評価
03 Dec. 2022

ミストCVD法により成膜したInドープMgO薄膜の発光特性
03 Dec. 2022

RF-MBEによるβ-Ga2O3(-201)基板へのMgドープGaNヘテロ構造の製作
03 Dec. 2022

InドープMgZnO薄膜のミストCVD成長
03 Dec. 2022

micro-LED集積化における側面の制御による電極の形成
03 Dec. 2022

岩塩構造酸化マグネシウム亜鉛MSM型真空紫外センサーの受光感度の温度依存性
03 Dec. 2022

放射光X線回折測定を用いたGaInN/InN成長のその場観察～InN解離温度領域での振る舞い～
Mar. 2018

alpha-Ga2O3を用いたダブルショットキー型光検出器の製作
Mar. 2018

III-V族窒化物の価電子帯構造およびギャップ内準位の評価
Mar. 2018

岩塩構造MgxZn1-xOの吸収端の観測と電子状態計算
Mar. 2018

イオン注入したGaNの光熱偏向分光法による評価
Mar. 2018

岩塩構造MgxZn1-xOにおける深紫外線カソードルミネセンスの温度および励起密度依存性
Mar. 2018

窒素ドープ酸化ガリウム薄膜における青色発光の強度変化
Mar. 2018

Influence of interface state and band bending on In and N polar InN from Angle-resolved XPS
Y. Nakajima; T. Onuma; T. Yamaguchi and T. Honda
45th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI 45), Jan. 2018, American Vacuum Society

ミストCVD法により成長したIn2O3薄膜を用いたTFT製作検討
Dec. 2017

コランダム構造酸化ガリウムソーラーブラインド光検出器の開発
Dec. 2017

Near surface band bending in InN films grown by DERI method
Y. Nakajima; K. Uehara; T. Onuma; T. Yamaguchi and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), Nov. 2017, Kogakuin Univ.

Fabrication of Si micro-cup substrate and its application for integration of μ-LEDs
R. Nawa; T. Onuma; T. Yamaguchi and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), Nov. 2017, Kogakuin Univ.

Origin of free holes and visible light absorption in p-type NiO films
M. Ono; T. Onuma; K. Sasaki; H. Nagai; T. Yamaguchi; M. Higashiwaki; A. Kuramata; S. Yamakoshi; M. Sato and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), Nov. 2017, Kogakuin Univ.

Bandgap Engineering of α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition
K. Rikitake; T. Yamaguchi; T. Onuma and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), Nov. 2017, Kogakuin Univ.

Fabrication of TFT using amorphous In2O3 thin film by mist CVD
T. Kobayashi; K. Sawamoto; S. Aikawa; T. Yamaguchi; T. Onuma; and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), Nov. 2017, Kogakuin Univ.

Formation of Black Matrix for Realization of Micro-LED Display
Y. Chunobayashi; R. Nawa; Y. Takahashi; H. Matsuura; T. Yamaguchi; T. Onuma and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), Nov. 2017, Kogakuin Univ.

Unintentionally Doped Impurities in GaN Layer Grown by RF-MBE
D. Taka; T. Yamaguchi; T. Onuma and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), Nov. 2017, Kogakuin Univ.

Photothermal Deflection Spectra of Gallium indium nitride layers grown by MOVPE
K. Fukuda; T. Onuma; L. Sang; T. Yamaguchi; T. Honda and M. Sumiya
The 16th International Symposium on Advanced Technology (ISAT-16), Nov. 2017, Kogakuin Univ.

Impact of mask materials on dry etching of GaN using ICP-RIE
H. Matsuura; T. Onuma; T. Honda and T. Yamaguchi
The 16th International Symposium on Advanced Technology (ISAT-16), Nov. 2017, Kogakuin Univ.

Near-the surface Fermi level measured In2O3 and Ga2O3 thin films by molecular precursor method
Y. Takahashi; T. Onuma; H. Nagai; T. Yamaguchi and T. Honda
The 16th International Symposium on Advanced Technology (ISAT-16), Nov. 2017, Kogakuin Univ.

MSM-type solar-blind photodetector with alpha-Ga2O3 film grown by mist CVD
K. Rikitake; T. Kobayashi; T. Yamaguchi; T. Onuma and T. Honda
36th Electronic Materials Symposium, Nov. 2017

Effect of low temperature buffer layer in mist CVD growth of In2O3 on alfa-Al2O3 substrate
T. Kobayashi; T. Yamaguchi; T. Onuma and T. Honda
36th Electronic Materials Symposium, Nov. 2017

Deep-UV emission properties of rocksalt-structured MgxZn1-xO Films Grown on MgO (001) Substrates
M. Ono; K. Ishii; T. Uchida; R. Jinno; K. Kaneko; T. Yamaguchi; T. Honda; S. Fujita and T. Onuma
36th Electronic Materials Symposium, Nov. 2017

Angle-resolved XPS spectra of InN/GaN grown by DERI method
Y. Nakajima; T. Onuma; T. Yamaguchi and T. Honda
36th Electronic Materials Symposium, Nov. 2017

Relationship between Temperature and Growth Rate of Ga2O3, In2O3 and Their Alloys in the Growth of Mist CVD
T. Yamaguchi; K. Tanuma; T. Kobayashi; H. Nagai; M. Sato; T. Onuma and T. Honda
th International Conference on Advanced Electromaterials (ICAE2017), Nov. 2017, [Invited]

XPS spectra of Ga2O3, In2O3 and their alloys fabricated by molecular precursor method
T. Honda; Y. Takahashi; T. Onuma; T. Yamaguchi; H. Nagai and M. Sato
24th International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 24), Nov. 2017

Growth of Ga2-xSnxO3 films by mist chemical vapor deposition
K.Rikitake; T. Kobayashi; T. Yamaguchi; T. Onuma and T. Honda
Materials Research Society, 2017 Fall Meeting & Exhibit, Nov. 2017, Materials Research Society

Crystal Structure Control in Epitaxial Growth of In2O3 by Mist CVD
T. Kobayashi; K. Tanuma; T. Yamaguchi; T. Onuma and T. Honda
Materials Research Society, 2017 Fall Meeting & Exhibit, Nov. 2017, Materials Research Society

GaN growth on Al template by MBE for the fabrication of micro displays
T. Honda; Y. Hoshikawa; K. Uehara; T. Onuma and T. Yamaguchi
11th International Symposium on Semiconductor Light Emitting Devices (ISSLED2017), Oct. 2017

Outstanding capability of In-situ Monitoring Techniques in RF-MBE Growth of InN and GaInN
T. Yamaguchi; T. Sasaki; M. Takahasi; T. Araki; T. Onuma; T. Honda and Y. Nanishi
2017 International Symposium on Novel and Sustainable Technology (ISNST2017), Oct. 2017, [Invited]

光熱偏向分光法によるGa1-xInxN薄膜の評価
Sep. 2017

GaN上およびInN上GaInN成長における成長初期過程の観察
Sep. 2017

SiドープとSiイオン注入単結晶酸化ガリウム結晶の光学的特性
Sep. 2017, [Invited]

低温In2O3バッファ層を用いたa-Al2O3基板上In2O3のミストCVD成長
Sep. 2017

Ga2-xSnxO膜のミストCVD成長
Sep. 2017

シリコンマイクロカップ基板の製作とµ-LEDの集積化の検討
Sep. 2017

Photoresponsivity of alpha-Ga2O3-based deep UV photodetector grown by mist CVD
K. Rikitake; T. Yamaguchi; T. Onuma and T. Honda
2nd International Workshop on Gallium Oxide and Related Materials, Sep. 2017

Cathodoluminescence spectra of Si-doped and Si-implanted β-Ga2O3 single crystals
T. Onuma; K. Sasaki; T. Masui; T. Yamaguchi; T. Honda; A. Kuramata and M. Higashiwaki
2nd International Workshop on Gallium Oxide and Related Materials, Sep. 2017, [Invited]

Fabrication of MSM-Type Photodetector Using Sn-Doped alpha-Ga2O3 Films Grown by Mist Chemical Vapor Deposition
K. Rikitake; T. Yamaguchi; T. Onuma and T. Honda
International Conference on Solid State Devices and Materials (SSDM2017), Sep. 2017

Compositional Pulling Effect in Epitaxial Growth of GaInN by RF-MBE
T. Yamaguchi; T. Sasaki; M. Takahasi; T. Araki; T. Onuma; T. Honda and Y. Nanishi
International Conference on Solid State Devices and Materials (SSDM2017), Sep. 2017, [Invited]

ミストCVD法によるSn添加Ga2O3成長とそのデバイス応用
Aug. 2017

ミストCVD法によるIn2O3薄膜の結晶構造制御
Aug. 2017

第一原理計算とX線光電子分光法によるp形NiO薄膜の電子構造の解析
Aug. 2017

赤色LEDに向けたDERI法によるGaInN薄膜のRF-MBE成長検討
Aug. 2017

RF-MBE法により成長したGaN薄膜中の不純物に関する考察
Aug. 2017

分子プレカーサー法により形成した金属酸化物薄膜の表面近傍フェルミ準位の測定
Aug. 2017

光熱偏向分光法を用いたGa1-xInxN薄膜における非発光再結合の検討
Aug. 2017

RF-MBE法を用いたDERI法によるInN薄膜成長における極性が与える影響
Aug. 2017

素子分離のためのICP-RIEによるエッチング垂直性の検討
Aug. 2017

ICP-RIEによるGaNテンプレートのアレイエッチングの製作検討
Aug. 2017

In-situ X-ray Reciprocal Space Mapping Measurements in GaInN growth on GaN and InN by RF-MBE
T. Yamaguchi; T. Sasaki; M. Takahasi; T. Onuma; T. Honda and Y. Nanishi
12th International Conference On Nitride Semiconductors (ICNS-12), Jul. 2017

Optical Properties of Ga2O3 Films and Crystals
T. Onuma; S. Saito; K. Sasaki; K. Goto; T. Masui; T. Yamaguchi; T. Honda; A. Kuramata and M. Higashiwaki
Compund Semiconductor Week 2017 (CSW 2017), May 2017

Relation between electrical and optical properties of p-type NiO films
M. Ono; T. Onuma; R. Goto; K. Sasaki; H. Nagai; T. Yamaguchi; M. Higashiwaki; A. Kuramata; S. Yamakoshi; M. Sato and T. Honda
Compund Semiconductor Week 2017 (CSW 2017), May 2017

Mist CVD growth of Sn-doped Ga2O3 thin films and its device application
K. Rikitake; T. Kobayashi; T. Yamaguchi; T. Onuma; T.Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’17 (LEDIA ’17), Apr. 2017, Akasaki memorial research center, Nagoya Univ.

Charge transfer transitions in p-type NiO films studied by optical measurements and X-ray photoelectron spectroscopy
M. Ono; T. Onuma; K. Sasaki; H. Nagai; T. Yamaguchi; M. Higashiwaki; A. Kuramata; S. Yamakoshi; M. Sato; T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’17 (LEDIA ’17), Apr. 2017, Akasaki Memorial Research Center, Nagoya Univ,

Comparison of III-polar and N-polar GaInN films grown by RF-MBE
Y. Nakajima; K. Uehara; T. Honda; T. Yamaguchi; T. Onuma
International Conference on Light-Emitting Devices and Thier Industrial Applications ’17 (LEDIA ’17), Apr. 2017, Akasaki Memorial Research Center, Nagoya Univ.

Fabrication of µ-LED array structures using ICP dry-etching
R. Nawa; T. Onuma; T. Yamaguchi; J. -S. Jang; T. Honda
International Conference on Light-Emitting Devices and Thier Industrial Applications ’17 (LEDIA ’17), Apr. 2017

GaInNのRF-MBE成長とpn ホモ接合型青緑色LEDの製作
20 Mar. 2014

ミストCVD法を用いたGa2O3結晶成長における成長速度の温度依存性
18 Mar. 2014

分子プリカーサー法で製作したGa-In-O多結晶薄膜の発光特性
17 Mar. 2014

分子プレカーサー法を用いたIn添加ZnO薄膜製作検討
17 Mar. 2014

蛍光顕微鏡と2次イオン質量分析を用いたGaInN薄膜の不均一評価
17 Mar. 2014

RF-MBE growth of GaN on alpha-Ga2O3 and mist-CVD growth of Ga2O3 on GaN
T. Honda; T. Yamaguchi; T. Hatakeyama; D. Tajimi and Y. Sugiura
SPIE Photonic West 2014 OPTO conference, 04 Feb. 2014, SPIE

RF-MBE growth of GaN on alpha-Ga2O3 and mist-CVD growth of Ga2O3 on GaN
2014

Mist CVD growth of α-Ga2O3 on sapphire substrates and RF-MBE growth of GaN on α-Ga2O3/sapphire templetes
T. Hatakeyama; T. Yamaguchi; D. Tajimi; Y. Sugiura; R. Amiya; T. Onuma and T. Honda
The 12th International Symposium on Advanced Technology (ISAT-12), 14 Nov. 2013, Southern Taiwan University of Science and Technology (STUST)

Ga2O3 and In2O3 growth by mist CVD
K. Tanuma; T. Yamaguchi; T. Hatakeyama; T. Onuma and T. Honda
The 12th International Symposium on Advanced Technology (ISAT-12), 14 Nov. 2013, Southern Taiwan University of Science and Technology (STUST)

Growth of InN and related alloys using DERI method toward fabrication of optoelectronics devices
T. Yamaguchi; K. Wang; T. Honda; E. Yoon; T. Araki and Y. Nanishi
The 2nd International Conference on Advanced Electromaterials (ICAE 2013), 13 Nov. 2013, The Korean Institute of Electrical and Electronic Material Engineers

Effects of (Al,Ga)Ox/GaN Interface States on GaN-based Schottky-type Light-emitting Diodes
S. Fujioka; R. Amiya; T. Onuma; T. Yamaguchi and T. Honda
The 2nd International Conference on Advanced Electromaterials (ICAE 2013), 13 Nov. 2013, The Korean Institute of Electrical and Electronic Material Engineers

Impact of Native Surface Oxide on GaN Layers for their Surface Band Bending
R. Amiya; Y. Sugiura; D. Tajimi; T. Yamaguchi; T. Honda
The 2nd International Conference on Advanced Electromaterials (ICAE 2013), 13 Nov. 2013, The Korean Institute of Electrical and Electronic Material Engineers

RF-MBE Growth of GaN/Al Heterostructures on 4H-SiC
S. Ohsawa; D. Tajimi; T. Yamaguchi and T. Honda
The 2nd International Conference on Advanced Electromaterials (ICAE 2013), 13 Nov. 2013, The Korean Institute of Electrical and Electronic Material Engineers

Characterization of fabricated Ga-In-O films by molecular precursor method and their future application of UV transparent electrodes
T. Yasuno; R. Goto; H. Nagai; H. Hara; Y. Sugiura; T. Yamaguchi; M. Sato and T. Honda
The 20th International SPACC (The Society of Pure and Applied Coordination Chemistry) Symposium, 12 Nov. 2013, The Society of Pure and Applied Coordination Chemistry

GaN系ショットキー型発光ダイオードにおける(Al,Ga)Ox/GaN界面準位の影響
17 Sep. 2013

Use of alpha-Ga2O3/alpha-Al2O3 template in GaN film growth
T. Hatakeyama; T. Yamaguchi; D. Tajimi; Y. Sugiura; T. Honda
2013 JSPS-MRS Joint Symposia, 17 Sep. 2013, Materials Research Society, Japanese Society of Applied Physics

4H-SiC上の疑似Al基板製作と疑似基板上へのGaN RF-MBE成長
16 Sep. 2013

In-situ RF-MBEによるAlN/GaNヘテロ構造上へのAlOx薄膜成長
16 Sep. 2013

β-Ga2O3結晶における青色発光強度と抵抗率の相関
16 Sep. 2013

表面酸化物のGaN表面フェルミ準位と表面バンド曲がりに及ぼす影響
16 Sep. 2013

ミストCVD法を用いたGaN基板上へのGa2O3成長
16 Sep. 2013

Fabrication of Ga-In-O films by molecular precursor method and their future application of transparent electrodes
T. Yasuno; H. Nagai; H. Hara; Y. Sugiura; T. Yamaguchi; M. Sato and T. Honda
The 16th International Conference on II-VI Compounds and Related Materials (II-VI 2013), 10 Sep. 2013, The 125th Committee on , Conversion between Light and Electricity, Japan Society for the Promotion of Science

Impact of the surface modification of the Ga- and N-face n-GaN Schottky diodes with low reverse-bias leakage current
T. Honda; T. Yamaguchi; N. Sakai; S. Fujioka; R. Amiya and Y. Sugiura
The 10th International Conference on Nitride Semiconductors, 28 Aug. 2013, Materials Research Society

Crystallized AlOx/AlN/GaN heterostructures grown by Plasma-assisted molecular beam epitaxy
Y. Sugiura; T. Honda and M. Higashiwaki
The 10th International Conference on Nitride Semiconductors, 28 Aug. 2013, Materials Research Society

RF-MBE growth and characterization of GaN films on α-Ga2O3/sapphire template
T. Hatakeyama; T. Yamaguchi; D. Tajimi; Y.Sugiura and T. Honda
The 10th International Conference on Nitride Semiconductors, 27 Aug. 2013, Materials Research Society

RF-MBE growth of GaN films on nitridated α-Ga2O3 buffer layer
T. Yamaguchi; T. Hatakeyama; D. Tajimi; Y. Sugiura; T. Onuma and T. Honda
The 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 14 Aug. 2013, Polish Society for Crystal Growth (PTWK) German Association for Crystal Growth (DGKK) University of Warsaw (UW) Institute of High Pressure Physics of the Polish Academy of Sciences (IHPP PAS) Institute of Physics of the Polish Academy of Sciences (IP PAS) Institute of Electronic Materials Technology (ITME)

Polarized Raman spectra in β-Ga2O3 crystals
T. Onuma1; T. Yasuno; S. Takano; R. Goto; S. Fujioka; T. Hatakeyama; T. Oda; H. Hara; C. Mochizuki; H. Nagai; T. Yamaguchi; M. Sato; T. Honda
The 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 13 Aug. 2013, Polish Society for Crystal Growth (PTWK) ,German Association for Crystal Growth (DGKK) ,University of Warsaw (UW) ,Institute of High Pressure Physics of the Polish Academy of Sciences (IHPP PAS) ,Institute of Physics of the Polish Academy of Sciences (IP PAS) ,Institute of Electronic Materials Technology (ITME)

Influence of native surface oxide on GaN surface band bending
R. Amiya; Y. Sugiura; D. Tajimi; T. Yamaguchi and T. Honda
32th Electronic Materials Symposium, 11 Jul. 2013

Effects of surface modification on emission property of GaN Schottky diodes
S. Fujioka; R. Amiya; T. Onuma; T. Yamaguchi and T. Honda
32th Electronic Materials Symposium, 11 Jul. 2013

RF-MBE growth of GaN films on α-Ga2O3/sapphire template
T. Hatakeyama; T. Yamaguchi; D. Tajimi; Y. Sugiura and T. Honda
32th Electronic Materials Symposium, 11 Jul. 2013

The GaN growth on pseudo aluminum templates by molecular beam epitaxy
S. Osawa; T. Hatakeyama; D. Tajimi; T. Yamaguchi and T. Honda
32th Electronic Materials Symposium, 11 Jul. 2013

Characterization of Ga-In-O films fabricated by molecular precursor method
T. Yasuno; T. Oda; H. Nagai; H. Hara; Y. Sugiura; T. Yamaguchi and T. Honda
32th Electronic Materials Symposium, 11 Jul. 2013

Impact of ultra-thin InN layers in GaN matrix for light-emitting diodes with super weak waveguides
D. Tajimi; Y. Sugiura; T. Hatakeyama; T. Onuma; T. Yamaguchi and T. Honda
32th Electronic Materials Symposium, 10 Jul. 2013

RF-MBE growth of AlOx/AlN/GaN heterostructures
Y. Sugiura; T. Yamaguchi; T. Honda and M. Higashiwaki
32th Electronic Materials Symposium, 10 Jul. 2013

Chemical fabrication of transparent Cu metal thin film for infrared reflective thin film
H. Nagai; T. Okada; T. Honda and M. Sato
32th Electronic Materials Symposium, 10 Jul. 2013

RF-MBE法による疑似Al基板上へのGaN成長
22 Jun. 2013

表面酸化物によるGaN表面フェルミ準位に及ぼす影響
22 Jun. 2013

n-situ RF-MBE法による窒化物構造上AlOx薄膜の結晶成長
21 Jun. 2013

Compressively strained GaN growth on (0001)4H-SiC with Al buffer by MBE
T. Honda; T. Yamaguchi; D. Tajimi; S. Osawa; M. Hayashi
European Materials Research Society 2013 Spring Meeting (E-MRS 2013 Sprong Meeting), 28 May 2013, European Materials Research Society

In-situ RF-MBE growth of AlOx/AlN/GaN heterostructures
(11)Y. Sugiura; T. Yamaguchi; T. Honda and M. Higashiwaki
The 40th Internaional Symposum on Compound Semiconductors (ISCS 2013), 20 May 2013

Effect of (GaN/AlN) ASF buffer layer in GaN growth on Al2O3 and silicon by RF-MBE
(12)T. Yamaguchi; D. Tajimi; M. Hayashi; T. Igaki; Y. Sugiura and T. Honda
The 40th Internaional Symposum on Compound Semiconductors (ISCS 2013), 20 May 2013

Aluminum layers grown on (0001)4H-SiC for the GaN growth by RF-MBE
(13)S. Osawa; D. Tajimi; T. Yamaguchi and T. Honda
The 40th Internaional Symposum on Compound Semiconductors (ISCS 2013), 20 May 2013

Growth of ultra-thin InN layers in GaN matrix for super weak waveguides
(14)D. Tajimi; Y. Sugiura; T. Hatakeyama; T. Onuma; T. Yamaguchi and T. Honda
The 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2013), 14 May 2013, JSPS 162 commitee

Formation of aluminum template grown on (0001)4H-SiC for the GaN growth by RF-MBE
S. Osawa; D. Tajimi; T. Yamaguchi and T. Honda
Conference on LED and Its Industrial Application 2013 (LEDIA’13), 24 Apr. 2013, ARC, Nagoya Univ.

Surface modification of GaN crystals and its effects on optical properties
S. Fujioka; R. Amiya; T. Onuma; T. Yamaguchi and T. Honda
Conference on LED and Its Industrial Application 2013 (LEDIA’13), 24 Apr. 2013, ARC, Nagoya Univ.

Fabrication of Ga-In-O films by molecular precursor method
T. Yasuno; T. Oda; H. Nagai; T. Yamaguchi; M. Sato and T. Honda
Conference on LED and Its Industrial Application 2013 (LEDIA’13), 24 Apr. 2013, ARC, Nagoya Univ.

Growth of GaN on α-Ga2O3/sapphire template by RF-MBE
T. Hatakeyama; T. Yamaguchi; D. Tajimi; Y. Sugiura and T. Honda
Conference on LED and Its Industrial Application 2013 (LEDIA’13), 24 Apr. 2013, ARC, Nagoya Univ.

Cathodoluminescence spectra of β-gallium oxide thin films fabricated by molecular precursor method
S. Takano; H. Nagai; H. Hara; C. Mochizuki; I. Takano; T. Onuma; T. Honda and M. Sato
Conference on LED and Its Industrial Application 2013 (LEDIA’13), 24 Apr. 2013, ARC, Nagoya Univ.

Temperature dependent cathodoluminescent spectra of β-Ga2O3 crystals
T. Onuma; S. Fujioka; T. Yamaguchi; M. Higashiwaki; K. Sakai; T. Matsui and T. Honda
Conference on LED and Its Industrial Application 2013 (LEDIA’13), 24 Apr. 2013, ARC, Nagoya Univ.

10×10 Siマイクロカップ基板でのμ-LED集積化
Mar. 2013

Formation of aluminum template grown on (0001)4H-SiC for the GaN growth by RF-MBE
2013

Surface modification of GaN crystals and its effects on optical properties
2013

Fabrication of Ga-In-O films by molecular precursor method
2013

Growth of GaN on α-Ga2O3/sapphire template by RF-MBE
2013

Cathodoluminescence spectra of β-gallium oxide thin films fabricated by molecular precursor method
2013

Temperature dependent cathodoluminescent spectra of β-Ga2O3 crystals
2013

Growth of ultra-thin InN layers in GaN matrix for super weak waveguides
2013

In-situ RF-MBE growth of AlOx/AlN/GaN heterostructures
2013

Effect of (GaN/AlN) ASF buffer layer in GaN growth on Al2O3 and silicon by RF-MBE
2013

Aluminum layers grown on (0001)4H-SiC for the GaN growth by RF-MBE
2013

Compressively strained GaN growth on (0001)4H-SiC with Al buffer by MBE
2013

Impact of ultra-thin InN layers in GaN matrix for light-emitting diodes with super weak waveguides
2013

RF-MBE growth of AlOx/AlN/GaN heterostructures
2013

Chemical fabrication of transparent Cu metal thin film for infrared reflective thin film
2013

Influence of native surface oxide on GaN surface band bending
2013

Effects of surface modification on emission property of GaN Schottky diodes
2013

RF-MBE growth of GaN films on α-Ga2O3/sapphire template
2013

The GaN growth on pseudo aluminum templates by molecular beam epitaxy
2013

Characterization of Ga-In-O films fabricated by molecular precursor method
2013

Polarized Raman spectra in β-Ga2O3 crystals
2013

RF-MBE growth of GaN films on nitridated α-Ga2O3 buffer layer
2013

RF-MBE growth and characterization of GaN films on α-Ga2O3/sapphire template
2013

Impact of the surface modification of the Ga- and N-face n-GaN Schottky diodes with low reverse-bias leakage current
2013

Crystallized AlOx/AlN/GaN heterostructures grown by Plasma-assisted molecular beam epitaxy
2013

Fabrication of Ga-In-O films by molecular precursor method and their future application of transparent electrodes
2013

Use of alpha-Ga2O3/alpha-Al2O3 template in GaN film growth
2013

Characterization of fabricated Ga-In-O films by molecular precursor method and their future application of UV transparent electrodes
2013

Growth of InN and related alloys using DERI method toward fabrication of optoelectronics devices
2013

Effects of (Al,Ga)Ox/GaN Interface States on GaN-based Schottky-type Light-emitting Diodes
2013

Impact of Native Surface Oxide on GaN Layers for their Surface Band Bending
2013

RF-MBE Growth of GaN/Al Heterostructures on 4H-SiC
2013

Mist CVD growth of α-Ga2O3 on sapphire substrates and RF-MBE growth of GaN on α-Ga2O3/sapphire templetes
2013

Ga2O3 and In2O3 growth by mist CVD
2013

GaNの表面処理による表面フェルミ準位変化の推定
29 Nov. 2012

Band-bending around the Surface of Zn and O-polarity Hexagonal ZnO Crystals
T. Honda; T. Onuma; Y. Sugiura and T. Yamaguchi
Materials Research Society 2012 Fall Meeting (MRS 2012F), 29 Nov. 2012, Materials Research Society

Fabrication of Ga2O3 films by molecular precursor method
T. Yasuno; T. Oda; H. Nagai; H. Hara; Y. Sugiura; T. Yamaguchi; M. Sato and T. Honda
Materials Research Society 2012 Fall Meeting (MRS 2012F), 28 Nov. 2012, Materials Research Society

Fabrication of GaN-based Schottky-type Light-emitting Diodes for Integrated RGB Pixels
T. Honda
11th International Symposium on Advanced Technology (ISAT-S), 30 Oct. 2012, Kogakuin University

Growth and Characterization of InN-based materials
T. Yamaguchi; T. Araki; T. Honda and Y. Nanishi
11th International Symposium on Advanced Technology (ISAT-S), 30 Oct. 2012, Kogakuin University

Electron-beam Incident-angle-resolved Cathodoluminescence Studies on Bulk ZnO Crystals
T. Onuma; S. Fujioka; F. Tomori; T. Yamaguchi and T. Honda
11th International Symposium on Advanced Technology (ISAT-S), 30 Oct. 2012, Kogakuin University

Characterization of Fabricated Ga2O3 Thin Films on (0001) Sapphire Substrate by Molecular Precursor Method
(39)T. Yasuno; T. Oda; H. Nagai; H. Hara; Y. Sugiura; T. Yamaguchi; M. Sato and T. Honda
11th International Symposium on Advanced Technology (ISAT-S), 30 Oct. 2012, Kogakuin University

Estimation of Surface States of Ga- and N-face GaN Measurement Near the Valence-band Maximum by X-ray Photoelectron Spectroscopy
Y. Sugiura; R. Amiya; D. Tajimi; T. Onuma; T. Yamaguchi and T. Honda
11th International Symposium on Advanced Technology (ISAT-S), 30 Oct. 2012, Kogakuin University

Introduction of Ultra-thin InN Layer in GaN-based Light-emitting Diodes for the Reduction of Crosstalk
D. Tajimi; M. Hayashi; Y. Sugiura; T. Onuma and T. Honda
11th International Symposium on Advanced Technology (ISAT-S), 30 Oct. 2012, Kogakuin University

Angle-resolved X-ray Photoelectron Spectroscopy Measurements of InN Grown by RF-MBE
R. Amiya; T. Yamaguchi; D. Tajimi; Y. Sugiura; J. Sakaguchi; T. Araki; Y. Nanishi and T. Honda
11th International Symposium on Advanced Technology (ISAT-S), 30 Oct. 2012, Kogakuin University

Structure and Optical Properties of Transparent Ga2O3-x Thin Films Fabricated by the Molecular Precursor Method
H. Nagai; S. Takano; H. Hara; C. Mochizuki; I. Takano; T. Onuma; T. Honda and M. Sato
11th International Symposium on Advanced Technology (ISAT-S), 30 Oct. 2012, Kogakuin University

Fabrication of the Transparent Conducting ZnO Thin Film by the Molecular Precursor Method
H. Nagai; T. Shibukawa; S. Takano; T. Honda and M. Sato
11th International Symposium on Advanced Technology (ISAT-S), 30 Oct. 2012, Kogakuin University

Angled-resolved XPS measurements of InN films grown by RF-MBE
R. Amiya; T. Yamaguchi; D. Tajimi; M. Hayashi; Y. Sugiura; T. Honda; T. Araki and Y. Nanishi
The 7th International Workshop on Nitride Semiconductors (IWN 2012), 18 Oct. 2012

Fabrication of RGB pixels using integrated GaN- based Schottky-type light-emitting diodes
T. Honda; T. Yamaguchi; N. Sakai; S. Fujioka; and Y. Sugiura
The 7th International Workshop on Nitride Semiconductors (IWN 2012), 15 Oct. 2012

GaN growth on (111)Al by molecular beam epitaxy
T. Honda; D. Tajimi; N. Shinohara; Y. Sugiura; M. Hayashi and T. Yamaguchi
17th International Conference on Molecular Beam Epitaxy (MBE 2012), 28 Sep. 2012

Growth of thick InGaN films with entire alloy composition using DERI method
T. Yamaguchi; N. Uematsu; T. Araki; T. Honda; E. Yoon and Y. Nanishi
17th International Conference on Molecular Beam Epitaxy (MBE 2012), 28 Sep. 2012

酸化ガリウムのCLスペクトルの温度依存性
13 Sep. 2012

ZnO単結晶の電子線入射角度依存カソードルミネセンス測定
13 Sep. 2012

集積化GaN系発光素子のための超薄膜InNを挿入した弱導波路発光層の検討
12 Sep. 2012

Angle-resolved X-ray photoelectron spectroscopy of c-plane InN grown by RF-MBE
R. Amiya,T. Yamaguchi,D. Tajimi,Y. Sugiura,T. Araki,Y. Nanishi and T. Honda
第73回応用物理学会学術講演会, 11 Sep. 2012

X-Ray Photoelectron Spectroscopy Measurements around the Valence-Band of Ga- and N-face (0001)GaN
Y. Sugiura; D. Tajimi; R. Amiya; T. Yamaguchi and T. Honda
39th International Symposium on Compound Semiconductors, 27 Aug. 2012

Toward strain control of GaN grown on Si by RF-MBE
T. Yamaguchi; D. Tajimi; T. Igaki; Y. Sugiura and T. Honda
9th International Symposium on Semiconductor Light Emitting Devices (ISSLED2012), 24 Jul. 2012

In-situ RF-MBE growth of AlOx/n-GaN composite structures
M. Higashiwaki; T. Igaki; T. Yamaguchi; and T. Honda
4th International Symposium on Growth of III-Nitrides (ISGN4), 17 Jul. 2012

Growth of InGaN film and InGaN/InGaN periodic structure using DERI method
T. Yamaguchi; N. Uematsu; K. Wang; T. Araki; T. Honda; E. Yoon and Y. Nanishi
31th Electronic Materials Symposium, 12 Jul. 2012

Angle-resolved XPS measurements of In-polar and N-polar InN films
R. Amiya; T. Yamaguchi; D. Tajimi; M. Hayashi; Y. Sugiura; T. Honda; T. Araki; and Y. Nanishi
31th Electronic Materials Symposium, 12 Jul. 2012

Impact of (GaN/AlN) alternating-source-feeding layer for the GaN growth on (111)Si substrates by RF-MBE
D. Tajimi; T. Igaki; Y. Sugiura; T. Yamaguchi and T. Honda
31th Electronic Materials Symposium, 11 Jul. 2012

Ozone treatment of oxide surface for the fabrication of MgZnO films by molecular precursor method
T. Yasuno; T. Oda; H. Nagai; H. Hara; Y. Sugiura; M. Sato; and T. Honda
31th Electronic Materials Symposium, 11 Jul. 2012

n-GaN上へのAlOx薄膜のin-situ RF-MBE成長
Mar. 2012

AlおよびAlOx膜堆積が極性GaNのPL強度に与える影響
Mar. 2012

Al緩衝層を用いた化合物原料MBE法による(0001)4H-SiC上GaN薄膜の製作
Mar. 2012

RF-MBE法による(GaN/AlN)交互供給緩衝層上GaN薄膜のx線回折測定
Mar. 2012

極性・非極性バルクZnO表面におけるCLスペクトルの比較
Mar. 2012

分子プレカーサｰ法によるZnO系透明電極製作におけるオゾン洗浄の効果
Mar. 2012

Impact of (GaN/AlN) alternating-source-feeding layer for the GaN growth on (111)Si substrates by RF-MBE
2012

Ozone treatment of oxide surface for the fabrication of MgZnO films by molecular precursor method
2012

Growth of InGaN film and InGaN/InGaN periodic structure using DERI method
2012

Angle-resolved XPS measurements of In-polar and N-polar InN films
2012

In-situ RF-MBE growth of AlOx/n-GaN composite structures
2012

Toward strain control of GaN grown on Si by RF-MBE
2012

X-Ray Photoelectron Spectroscopy Measurements around the Valence-Band of Ga- and N-face (0001)GaN
2012

Angle-resolved X-ray photoelectron spectroscopy of c-plane InN grown by RF-MBE
2012

GaN growth on (111)Al by molecular beam epitaxy
2012

Growth of thick InGaN films with entire alloy composition using DERI method
2012

Fabrication of RGB pixels using integrated GaN- based Schottky-type light-emitting diodes
2012

Angled-resolved XPS measurements of InN films grown by RF-MBE
2012

Fabrication of GaN-based Schottky-type Light-emitting Diodes for Integrated RGB Pixels
2012

Growth and Characterization of InN-based materials
2012

Electron-beam Incident-angle-resolved Cathodoluminescence Studies on Bulk ZnO Crystals
2012

Characterization of Fabricated Ga2O3 Thin Films on (0001) Sapphire Substrate by Molecular Precursor Method
2012

Estimation of Surface States of Ga- and N-face GaN Measurement Near the Valence-band Maximum by X-ray Photoelectron Spectroscopy
2012

Introduction of Ultra-thin InN Layer in GaN-based Light-emitting Diodes for the Reduction of Crosstalk
2012

Angle-resolved X-ray Photoelectron Spectroscopy Measurements of InN Grown by RF-MBE
2012

Structure and Optical Properties of Transparent Ga2O3-x Thin Films Fabricated by the Molecular Precursor Method
2012

Fabrication of the Transparent Conducting ZnO Thin Film by the Molecular Precursor Method
2012

Fabrication of Ga2O3 films by molecular precursor method
2012

Band-bending around the Surface of Zn and O-polarity Hexagonal ZnO Crystals
2012

(GaN/AlN)多重緩衝層を用いたRF-MBE法によるSi基板上GaN薄膜成長
Dec. 2011

InNおよびGaN成長における原子脱離過程その場観察
Dec. 2011

In-plane epitaxial relationship of (0001)sapphire grown by compound-source MBE
Y. Sugiura; T. Oda; T. Onuma; T. Yamaguchi and T. Honda
Materials Research Society 2011 Fall Meeting (MRS 2011F), Dec. 2011, Materials Research Society

Low temperature growth of GaN on pseudo (111)Al substrates by RF-MBE
M. Hayashi; T. Goto; T. Yamaguchi; T. Igaki and T. Honda
Materials Research Society 2011 Fall Meeting (MRS 2011F), Dec. 2011

XPS spectra of c-face GaN and ZnO crystals
T. Honda
The 10th International symposium on advanced Technology (ISAT-10), Nov. 2011

X-ray diffraction of ZnO layer grown by compound-source MBE
R. Amiya; Y. Sugiura; T. Yamaguchi and T. Honda
The 10th International symposium on advanced Technology (ISAT-10), Nov. 2011

Ozone treatment of the substrates for ZnO deposition by molecular precursor method
T. Oda; H. Hara; Y. Sugiura; T. Yasuno; T. Yamaguchi and T. Honda
The 10th International symposium on advanced Technology (ISAT-10), Nov. 2011

RF-MBE法による(GaN/AlN)交互供給緩衝層上GaN薄膜成長
Aug. 2011

極性および非極性GaN表面における表面再結合過程
Aug. 2011

六方晶GaNとZnOにおける表面再結合の比較
Aug. 2011

化合物原料MBE法を用いたZnO薄膜の結晶成長とその評価
Aug. 2011

Comparative study of surface recombination in hexagonal GaN and ZnO surfaces
T. Onuma; N. Sakai; T. Igaki; T. Yamaguchi; A. A. Yamaguchi and T. Honda
The 28th North America Conference on Molecular Beam Epitaxy (NAMBE 2011), Aug. 2011

Growths of InN/InGaN periodic structure and thick InGaN film using dropment elimination process by radical-beam irradiation
T. Yamaguchi; T. Araki; T. Honda; E. Yoon and Y. Nanishi
The 28th North America Conference on Molecular Beam Epitaxy (NAMBE 2011), Aug. 2011

Built-in potential along the c-axis in MBE-grown GaN layers observed by angle resolved x-ray photoelectron spectroscopy
T. Honda; T. Igaki; T. Yamaguchi; Y. Kumagai and A. Kokitu
The 28th North America Conference on Molecular Beam Epitaxy (NAMBE 2011), Aug. 2011

Low temperature growth of GaN on pseudo (111)Al substrates by RF-molecular beam epitaxy
M. Hayashi and T. Honda
The 34th International Symposium on Optical Communications, Aug. 2011

Surface Recombination in GaN crystals by surface modification
N.Sakai and T. Honda
The 34th International Symposium on Optical Communications, Aug. 2011

X-ray diffraction characterization of ZnO layer grown by compound-source molecular beam epitaxy
Y. Sugiura and T. Honda
The 34th International Symposium on Optical Communications, Aug. 2011

DERI法によるIn窒化物半導体の結晶成長
Jul. 2011

Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by a surface modification
T. Honda; N. Sakai; S. Komiyama; M. Hayashi and T. Igaki
9th International Conference on Nitride Semiconductors (ICNS-2011), Jul. 2011

Recombination dynamics in polar and nonpolar GaN substrates
N. Sakai; T. Igaki; T. Onuma; A. A. Yamaguchi; T. Yamaguchi and T. Honda
30th Electronic Materials Symposium (EMS-30), Jul. 2011

In situ monitoring techniques by DERI method
T. Yamaguchi; K.Wang; T. Araki; T. Honda; E. Yoon and Y.Nanishi
30th Electronic Materials Symposium (EMS-30), Jul. 2011

Polarity control of MgZnO transparent electrodes by molesular precursor method
T. Oda; T. Kibu; H. Hara; Y. Sugiura; M. Sato and T. Honda
30th Electronic Materials Symposium (EMS-30), Jul. 2011

GaN growth on pseudo (111)Al substrates by RF-MBE
T. Honda; M. Hayashi; T. Goto and T. Igaki
Europe Materials Research Society 2011 Spring Meeting (E-MRS), May 2011, Europe Materials Research Society

Surface Recombination in polar and nonpolar GaN surfaces
N. Sakai; T. Onuma; A. A. Yamaguchi and T. Honda
5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011), May 2011

ZnO growth for transparent electrodes by compound-source MBE
Y. Sugiura; T. Oda; S. Obata; Y. Yoshihawa; T. Onuma and T. Honda
5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011), May 2011

Initial growth monitoring in GaN epitaxial growth on (GaN/AlN) buffer layer by RF-molecular beam epitaxy
M. Hayashi; T. Goto; T. Igaki; J. Sugawara; R.Yonezawa; Y. Sugiura and T. Honda
5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011), May 2011

RF-MBE法を用いた(GaN/AlN)交互供給緩衝層上GaN薄膜成長
Mar. 2011

化合物原料MBE法によるZnO薄膜の製作検討
杉浦洋平,小田拓人,小畑 聡,芳原義大,尾沼猛儀,本田 徹
第58回応用物理学関係連合講演会、神奈川工科大学、厚木、神奈川, 26p-BZ-7, Mar. 2011

分子プレカーサー法により形成したp型酸化銅(I)透明薄膜の半導体特性
Mar. 2011

銀ナノ粒子-チタニアアロイ薄膜の導電性と光電流密度
Mar. 2011

Built-in potential in GaN crystals by angle resolved X-ray photoelectron spectroscopy
2011

Fabrication of c-axis oriented MgZnO transparent electrodes by molecular precursor method
2011

GaN growth on pseudo (111)Al substrates by RF-MBE
2011

Surface Recombination in polar and nonpolar GaN surfaces
2011

ZnO growth for transparent electrodes by compound-source MBE
2011

Initial growth monitoring in GaN epitaxial growth on (GaN/AlN) buffer layer by RF-molecular beam epitaxy
2011

Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by a surface modification
2011

Recombination dynamics in polar and nonpolar GaN substrates
2011

In situ monitoring techniques by DERI method
2011

Polarity control of MgZnO transparent electrodes by molesular precursor method
2011

Comparative study of surface recombination in hexagonal GaN and ZnO surfaces
2011

Growths of InN/InGaN periodic structure and thick InGaN film using dropment elimination process by radical-beam irradiation
2011

Built-in potential along the c-axis in MBE-grown GaN layers observed by angle resolved x-ray photoelectron spectroscopy
2011

Low temperature growth of GaN on pseudo (111)Al substrates by RF-molecular beam epitaxy
2011

Surface Recombination in GaN crystals by surface modification
2011

X-ray diffraction characterization of ZnO layer grown by compound-source molecular beam epitaxy
2011

XPS spectra of c-face GaN and ZnO crystals
2011

X-ray diffraction of ZnO layer grown by compound-source MBE
2011

Ozone treatment of the substrates for ZnO deposition by molecular precursor method
2011

In-plane epitaxial relationship of (0001)sapphire grown by compound-source MBE
2011

Low temperature growth of GaN on pseudo (111)Al substrates by RF-MBE
2011

Built-in potential in GaN crystals by angle resolved X-ray photoelectron spectroscopy
T. Honda; T. Igaki; Y. Kumagai and A. Kokitu
The 38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38), San Diego, California, USA, Mo 1220., Jan. 2011

Fabrication of c-axis oriented MgZnO transparent electrodes by molecular precursor method
T. Oda; T. Kidu; H. Hara; Y. Sugiura; M. Sato and T. Honda
The 38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38), San Diego, California, USA, We 1200., Jan. 2011

MBE法による交互供給バッファー層を用いたGaN薄膜の製作
17 Dec. 2010

化合物原料MBE法によるGaN/(111)Siの高品質化の検討
17 Dec. 2010

化合物原料MBE法によるZnO薄膜の低温堆積検討
17 Dec. 2010

RF-MBE法による擬似Al基板上へのGaN薄膜の低温成長
Nov. 2010

RF励起窒素を用いた化合物原料MBE法によるGaN/(111)Siの製作検討
Nov. 2010

疑似(111)Al基板上GaN薄膜のRF-MBE成長
Nov. 2010

Fabrication of RGB pixels based on UV Schottky-type LEDs
T.Honda
The 9th International Symposium on Advanced Technology (ISAT-9), Tokyo, Japan, IL-9., Nov. 2010

The Electrical and optical properties of p-type cuprous oxides transparent thin films by the molecular precursor method
T. Suzuki; H. Nagai; C. Mochizuki; H. Hara; I. Takano; T. Honda and M. Sato
The 9th International Symposium on Advanced Technology (ISAT-9), Tokyo, Japan, P-18., Nov. 2010

Fabrication of ZnO layers by compound source molecular beam epitaxy
Y. Sugiura; T. Oda; S. Obata; Y. Yoshihara and T. Honda
The 9th International Symposium on Advanced Technology (ISAT-9), Tokyo, Japan, P-25., Nov. 2010

Polarity control of MgZnO thin films by molecular precursor method
T. Oda; T. Kizu; Y. Sugiura; H. Hara; M. Sato and T. Honda
The 9th International Symposium on Advanced Technology (ISAT-9), Tokyo, Japan, P-26., Nov. 2010

GaN epitaxial growth on pseudo Al substrates by RF-MBE
M. Hayashi; T. Goto; T. Igaki; J. Sugawara; R. Yonezawa; S. Taguchi and T. Honda
The 9th International Symposium on Advanced Technology (ISAT-9), Tokyo, Japan, P-27., Nov. 2010

Surface recombination mechanism in hexagonal GaN crystals
N. Sakai; T. Onuma; T. Okuhata; A. A. Yamaguchi and T. Honda
The 9th International Symposium on Advanced Technology (ISAT-9), Tokyo, Japan, P-28., Nov. 2010

Polarity control of (0001)GaN epitaxial layers grown by RF-MBE
T. Igaki; M. Hayashi; T. Goto; S. Taguchi and T. Honda
The 9th International Symposium on Advanced Technology (ISAT-9), Tokyo, Japan, P-29., Nov. 2010

分子プレカーサー法によるp型酸化銅(I)透明薄膜の形成
Sep. 2010

分子プレカーサー法によるMgZnO薄膜の極性制御
Sep. 2010

RF-MBE法を用いた疑似Al基板上GaN成長
Sep. 2010

Surface recombination of hexagonal GaN crystals
N. Sakai; T. Onuma; T. Okuhata; A. A. Yamaguchi and T. Honda
The International Workshop on Nitride semiconductors (IWN2010), Marriott Tampa Waterside Hotel & Marina, Tampa Bay, Florida, USA, GP 1.20., Sep. 2010

MBE法による交互供給バッファ層を用いたGaN薄膜の製作検討
T. Goto and T. Honda
The 33th International Symposium on Optical communications, Makuhari, Chiba, Japan, E-2., Aug. 2010

化合物原料MBE法によるZnO薄膜の製作検討
Y. Sugiura and T. Honda
The 33th International Symposium on Optical communications, Makuhari, Chiba, Japan, P1-22., Aug. 2010

RF-MBE法による擬似Al基板上へのGaN成長
M. Hayashi and T. Honda
The 33th International Symposium on Optical communications, Makuhari, Chiba, Japan, P2-15., Aug. 2010

GaN結晶における面方位とフォトルミネッセンスの発光寿命の関係
N. Sakai and T. Honda
The 33th International Symposium on Optical communications, Makuhari, Chiba, Japan, P3-4., Aug. 2010

RF-MBE法によるGaN薄膜成長における極性制御の検討
T. Igaki and T. Honda
The 33th International Symposium on Optical communications, Makuhari, Chiba, Japan, P3-12., Aug. 2010

分子プレーカーサー法によるGa-doped MgZnO薄膜の配向性及び膜厚依存性の検討
T. Oda and T. Honda
The 33th International Symposium on Optical communications, Makuhari, Chiba, Japan, P2-29., Aug. 2010

GaN growth on pseudo Al substrates by molecular beam epitaxy at low temperatures
T. Goto; M. Hayashi; T. Igaki; S. Taguchi and T. Honda
16th International Conference on molecular beam epitaxy (ICMBE 2010), bcc Belriner congress center, Belrin, Germany,, Aug. 2010

XPS study on (0001) and (000-1)GaN layers on sapphire substrates grown by molecular beam epitaxy
T. Honda; K. Noguchi; N. Sakai; S. Taguchi; T. Goto; T. Igaki and M. Hayashi
The 3rd International Symposium on Growth of III-Nitrides, Montpellier Convention Center, Montpellier, France, MoP-38., Jul. 2010

III-N growth on pseudo Al substrates by MBE at low temperatures
M. Hayashi; T. Goto; T. Igaki; S.Taguchi and T. Honda
29th Electronic Materials Symposium (EMS-29), Laforet Shuzenji, Izu, Shizuoka, Japan, Th6-12., Jul. 2010

Light propagation in GaN-based Schottky-type diodes using FDTD method
N. Sakai; T. Kobayashi and T. Honda
29th Electronic Materials Symposium (EMS-29), Laforet Shuzenji, Izu, Shizuoka, Japan, Th2-4., Jul. 2010

Fabrication of c-axis oriented MgZnO films by molecular precursor method
T. Oda; T. Kizu; H. Hara; Y. Sugiyama; M. Sato and T. Honda
29th Electronic Materials Symposium (EMS-29), Laforet Shuzenji, Izu, Shizuoka, Japan, We2-6., Jul. 2010

小型フラットディスプレイのための窒化ガリウム系集積化発光素子の製作
04 Jun. 2010

Fabrication of c-axis oriented MgZnO transparent electrode by molecular precursor method
T. Oda; H. Hara; C. Mochizuki; M. Sato and T. Honda
8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010), Peking University, Beijing, China, P16., May 2010

Surface Modification of (0001)GaN and its application to RGB pixels based on UV Schottky-type LEDs
T. Honda; N. Sakai and T. Nozaki
8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010), Peking University, Beijing, China, L-3., May 2010

Fabrication of c-axis oriented MgZnO transparent electrode by molecular precursor method
2010

Surface Modification of (0001)GaN and its application to RGB pixels based on UV Schottky-type LEDs
2010

Polarity control of (0001)GaN epitaxial layers grown by RF-MBE
2010

XPS study on (0001) and (000-1)GaN layers on sapphire substrates grown by molecular beam epitaxy
2010

III-N growth on pseudo Al substrates by MBE at low temperatures
2010

Light propagation in GaN-based Schottky-type diodes using FDTD method
2010

Fabrication of c-axis oriented MgZnO films by molecular precursor method
2010

GaN growth on pseudo Al substrates by molecular beam epitaxy at low temperatures
2010

Surface recombination of hexagonal GaN crystals
2010

Fabrication of RGB pixels based on UV Schottky-type LEDs
2010

The Electrical and optical properties of p-type cuprous oxides transparent thin films by the molecular precursor method
2010

Fabrication of ZnO layers by compound source molecular beam epitaxy
2010

Polarity control of MgZnO thin films by molecular precursor method
2010

GaN epitaxial growth on pseudo Al substrates by RF-MBE
2010

Surface recombination mechanism in hexagonal GaN crystals
2010

Polarity control of (0001)GaN epitaxial layers grown by RF-MBE
2010

Polarity control of (0001)GaN epitaxial layers grown by RF-MBE
The 37th International Symposium on Compound Semiconductors (ISCS 2010), Takamatsu Symbol Tower, Kagawa, Japan, FrP-63., 2010

Fabrication of AlN films at low temperature by CS-MBE technique
K. Watanabe; K. Sugimoto; M. Arai; K. Takeda and T. Honda
34th International Symposium on Compound Semiconductors, Kyoto University, Kyoto, TuC-P23, Oct. 2007

Fabrication of GaN-based UV TF-ELDs by CS-MBE technique and their application to RGB Light-emitting Pixels
M. Arai; K. Sugimoto; S. Egawa and T. Honda
7th International Conference on Nitride Semiconductors, MGM Grand Hotel, Las Vegas, NV, USA, TuP53, Sep. 2007

Fabrication of GaN-based MOS LEDs for micro pixels in flat-panel displays
T. Honda; T. Kobayashi; S. Komiyama; Y. Mashiyama; M. Arai and K. Yoshioka
7th International Conference on Nitride Semiconductors, MGM Grand Hotel, Las Vegas, NV, USA, TuP52, Sep. 2007

Introduction of preheated ammonia during GaN growth on Si by compound-source MBE at low temperature
T. Honda; M. Sawadaishi; H. Yamamoto; M. Arai; K. Yoshioka and T. Okuhata
15th International Conference on Crystal Growth, Salt Lake City, UT, USA, wg29, Aug. 2007

Preheated Ammonia Supply during Compound-Source Molecular Beam Epitaxy of GaN
M. Sawadaishi; M. Sawada; K. Sugimoto; T. Baba and T. Honda
The 3rd Asia-Pacific Workshop on Widegap Semiconductors, Jeonju, Korea, 11 － 14 March, 2007., Mar. 2007

Fabrication of GaN-based MOS LEDs operating in UV spectral region
2007

Preheated Ammonia Supply during Compound-Source Molecular Beam Epitaxy of GaN
2007

Introduction of preheated ammonia during GaN growth on Si by compound-source MBE at low temperature
2007

Fabrication of GaN-based UV TF-ELDs by CS-MBE technique and their application to RGB Light-emitting Pixels
2007

Fabrication of GaN-based MOS LEDs for micro pixels in flat-panel displays
2007

Fabrication of AlN films at low temperature by CS-MBE technique
2007

Fabrication of GaN-based MOS LEDs operating in UV spectral region
T. Honda; T. Kobayashi; S. Komiyama; Y. Mashiyama
34th Conference on the physics and chemistry of semiconductor interfaces, Salt Lake City, Utah, U. S. A., 14 － 18 January, 2007, Mo1135, Jan. 2007

Integrated light-emitting diodes grown by MOCVD for flat display panels
T. Honda; T. Kobayashi; S. Egawa; M. Sawada; K. Sugimoto; T. Baba and H. Kawanishi
13th International Conference on Metal-organic Vapor Phase Epitaxy, Miyazaki, Japan, 2006, 22 － 26 May, TuP.64, Jun. 2006

Cathodoluminescence Spectra of Surface-oxidized GaN Crystallites
2006

Integrated light-emitting diodes grown by MOCVD for flat display panels
2006

Cathodoluminescence Spectra of Surface-oxidized GaN Crystallites
T. Honda; M. Akiyama; T. Baba and H. Kawanishi
33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (2006). We1140, Jan. 2006

減圧MO‐VPE法によるBGaNの結晶成長
14 Nov. 1998

BGaN系紫外レーザの基礎検討
Nov. 1998

減圧MO‐VPE法によるBGaNのH. T.-AlNを介した(0001)6H‐SiC上への成長
Sep. 1998

(0001)6H‐SiC基板上へのBxGa1‐xNの成長
Sep. 1998

(0001)6H‐SiC上へのGaNの直接成長
Sep. 1998

GaN系面発光レーザ用京新規構造の製作
Sep. 1998

GaN系紫外発光素子の基礎検討
Mar. 1998

アンモニアを用いたMO‐MBE法による(0001)6H‐SiC基板上GaNの直接成長
Mar. 1998

BGaN系紫外レーザの基礎検討
1998

BAlGaN格子整合系4元混晶半導体の基礎検討
Dec. 1997

有機金属気相成長法によるGaN/BAlNヘテロ構造の製作
Nov. 1997

BｘGa１－ｘNの有機金属気相成長における熱力学解析
Oct. 1997

(0001)6H-SiC上に格子整合したBGaNの光学利得の見積もり
Oct. 1997

(0001)6H-SiC上に格子整合したBx1Aly1Ga(1-x1-y1)N/Bx2Aly2Ga(1-x2-y2)N DH構造の基礎検討
Oct. 1997

AlN/GaN交互供給バッファ層による（0001）6H‐SiC上GaNのクラック抑制
Oct. 1997

（0001）6H‐SiC上に成長したDH構造におけるクラックの特徴
Oct. 1997

有機金属気相成長法による（0001）6H‐SiC基板上に成長したGaN/B(AlN)ヘテロ構造
Oct. 1997

ｐ型コンタクト抵抗のGaN面方位依存性
Mar. 1997

MOVPE法によるGaN/AlGaN量子井戸構造の界面制御に関する検討
Mar. 1997

MOVPE選択成長法によるGaN微細構造の形成
Mar. 1997

GaN系面発光レーザのためのドライエッチングによる微細構造形成
Mar. 1997

BAlGaN格子整合系4元混晶半導体の基礎検討
1997

ZnSe系緑色/青色面発光レーザの基礎検討
Sep. 1996

GaNエピタキシャル成長のためのSi基板上へのZnO形成
Sep. 1996

サファイア基板上へのGaNのMOVPE成長におけるオゾン前処理
Sep. 1996

3フローMOVPE法によるGaNの成長と評価
Sep. 1996

光ウエットエッチング後のGaN膜のフォトルミネッセンス測定
Sep. 1996

GaN/AlGaN量子井戸におけるピエゾ効果が発光に与える影響
Sep. 1996

Light Emitting Materials in Green/Blue/UV Spectral Region and Its Application for Surface Emitting Lasers
T. Honda; F. Koyama and K. Iga
NEDO Frontier Technology Lecture, Sep. 1996

GaN系半導体レーザのドライエッチング反射鏡に関する検討
Aug. 1996

ECR-RIBEによるGaNのエッチング
Mar. 1996

電子ビーム蒸着によるGaN系面発光レーザ用誘電体多層膜反射鏡
Mar. 1996

GaN系面発光レーザの温度特性に関する検討
Mar. 1996

Light Emitting Materials in Green/Blue/UV Spectral Region and Its Application for Surface Emitting Lasers
1996

GaN系青色・紫外面発光レーザの基礎検討
Mar. 1995

量子井戸活性層を有するGaN系面発光レーザの検討
Mar. 1995

バンド内緩和時間を考慮したGaNの線形利得の見積り
Sep. 1994

In Situk光モニタを用いたII-VI族青色面発光レーザの反射鏡製作
Sep. 1994

GaN系面発光レーザ用多層膜反射鏡の基礎設計
Sep. 1994

Highly-Doped p-ZnSe Formation by Li3N Diffusion
S. W. Lim; T. Honda; F. Koyama and K. Iga
第55回応用物理学会学術講演会, Sep. 1994

Design of MQB for ZnCdSe/ZnSe Blue-Green Lasers
K. Bousbahi; T. Honda; F. Koyama and K. Iga
第55回応用物理学会学術講演会, Sep. 1994

青色面発光レーザの高反射率反射鏡の基礎検討
Mar. 1994

CuAlxGa1-x(SySe1-y)2積層構造のルミネッセンスとデバイス応用
Mar. 1994

Highly-Doped p-ZnSe Formation by Li3N Diffusion
1994

Design of MQB for ZnCdSe/ZnSe Blue-Green Lasers
1994

II-VI族化合物を用いる短波長面発光レーザの基礎設計
Sep. 1993

CuGaS2への不純物ドーピング(III)
Mar. 1993

有機金属気相成長法による銅カルコパイライトのヘテロ積層構造
Sep. 1992

ワイドギャップカルコパイライト化合物のヘテロ接合
Sep. 1992

CuGaS2への不純物ドーピング(II)
Sep. 1992

CuGaS2への不純物ドーピング(I)
Mar. 1992

有機金属気相成長法によるI-III-V2族化合物のエピタキシャル成長
Mar. 1992

CuGaS2/ CuAlS2/GaP(100)薄膜の励起スペクトル
Nov. 1991

CuAlS2のPL評価
Sep. 1991

交互供給MOCVD法によるCuGaS2薄膜の成長(II)
Mar. 1991

CuAl(SxSe1-x)2のMOVPE成長
Mar. 1991

交互供給MOCVD法によるCuGaS2薄膜の成長
Sep. 1990

DTBSを用いたCuGa(SxSe1-x)2のMOVPE成長
Sep. 1990

MOVPE法によるカルコパイライト薄膜の成長と評価
Jul. 1990

CuGaS2,CuGaSe2の減圧MOVPE成長
Mar. 1990

銅カルコパイライトのMOVPE成長における原料系の検討
Sep. 1989

新しいS原料を用いたCuGaS2のMOVPE成長
Apr. 1989

銅カルコパイライトのMOVPE成長
Jan. 1989

CuGaS2/ZnSのMOVPE成長
Oct. 1988

Jul. 1997
Japan

Nov. 1996
Japan

Mar. 1996
Japan